A slot-gate short-circuited anode soi LIGBT
A trench gate, anode technology, applied in circuits, semiconductor devices, electrical components, etc., can solve the problems of large on-voltage drop, low anode hole injection efficiency, affecting the uniformity of device current distribution, etc., to reduce the on-voltage drop, eliminate the phenomenon of voltage foldback, eliminate the effect of voltage foldback effect
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Embodiment 1
[0019] like figure 1 As shown, the SOI LIGBT of this example includes a P substrate 1, a buried oxide layer 2, and a top semiconductor layer stacked sequentially from bottom to top; the top semiconductor layer has an N-type drift region 3, and an N-type drift region 3 One side has a P well region 4, and the other side is an anode structure; the upper surface of the P well region 4 has an N+ cathode region 5 and a P+ body contact region 6, and the lead end of the P+ body contact region 6 is a cathode; In the well region 4, there are groove grids 7 and cathode grooves 8 that penetrate the P well region 4 from the surface and extend from the bottom to the N-type semiconductor drift region 3, and the groove grids 7 are in contact with the N+ cathode region 5, and the cathode grooves 8 In contact with the P+ body contact region 6, the slot grid 7 and the cathode slot 8 respectively have a first insulating dielectric layer 71 and a second insulating dielectric layer 81 located on th...
Embodiment 2
[0023] like figure 2 As shown, compared with Embodiment 1, there are multiple slot gates 7 and cathode slots 8 in this example, which are alternately arranged along the lateral direction of the device. Multiple trench gates increase the channel density of the device and reduce the conduction voltage drop.
Embodiment 3
[0025] like image 3 As shown, compared with Embodiment 2, the N+ cathode region 5 is connected to the cathode in this example.
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