44 results about "Quantum dot array" patented technology

The invention relates to the field of all-weather safety monitoring in the chemical industry, and discloses an all-weather chemical plant monitoring method, which comprises the following steps: dynamically acquiring quantum state measurement data of environmental parameters through a quantum dot array, capturing parameters such as temperature, pressure and gas concentration in real time by the quantum dot array through a tunneling effect, the sensing principle is based on the displacement effect of the quantum limited energy level; mapping the measurement data to a five-dimensional AdS spatio-temporal manifold and calculating an Einstein tensor; based on the Einstein tensor, solving topology invariant and curvature evolution of the space-time manifold; generating an algebraic decision instruction according to the topology invariant; and the encrypted control signal is fed back to the execution mechanism through the topology photon link. Through dynamic coupling of the quantum dot array and the five-dimensional AdS space-time manifold, cross-scale correlation monitoring of quantum state fluctuation and macroscopic deformation is achieved, the recognition blind area of a traditional method for micro-nano defects is broken through, and the early detection rate of pipeline microcracks is increased by two orders of magnitude.

The invention discloses a chemical plating method for plating copper on the surface of a silicon wafer, which belongs to the technical field of semiconductor coating, and comprises the following steps: modifying a semiconductor material BaTiO3 nanocrystal by a silane coupling agent to prepare quantum dot ink, spin-coating the quantum dot ink on the surface of a P-type silicon wafer cleaned by RCA to form a quantum dot array, and coating the quantum dot array on the surface of the P-type silicon wafer. The preparation method comprises the following steps: activating in a solution containing copper sulfate and trisodium citrate under the assistance of ultrasonic waves, carrying out chemical copper plating in a micro-fluidic reaction cavity by using an alkaline plating solution containing copper sulfate, disodium ethylene diamine tetraacetate and glyoxylic acid under the assistance of ultrasonic waves and lasers, and finally washing with deionized water and ethanol and drying with nitrogen to obtain a silicon wafer with a copper-plated surface. Through the BaTiO3 quantum dots, the micro-fluidic channel, the pulse liquid supply system and the auxiliary synergistic effect of the ultrasonic wave and the laser array, the copper film which is uniform in thickness, high in adhesive force, good in conductivity and excellent in corrosion resistance can be prepared, and the chemical copper plating efficiency and quality are improved.

The invention discloses a quantum dot array as well as a preparation method and application thereof, a four-channel high-performance quantum dot array consisting of four fluorescent quantum dots is constructed, the quantum dot array successfully realizes specific distinguishing of 12 small molecule compounds under a mode recognition method, and the quantum dot array is proved to have linear detection capability.

The invention relates to the technical field of connectors, in particular to a method for adaptively matching impedance according to a protocol and a connector, and the method comprises the following steps: A, embedding a quantum dot array in a dielectric layer for signal transmission of the connector; b, detecting the type of a communication protocol accessed by the connector in real time, and generating a protocol identification signal; c, calling a target impedance value Ztarget from a pre-stored multi-protocol impedance database according to the protocol identification signal; d, applying bias voltage to regulate and control the electron tunneling probability Pt of the quantum dots; e, changing an effective dielectric constant epsilon eff based on the electron tunneling probability Pt, and dynamically adjusting a distributed capacitance value C; and F, correcting the bias voltage through closed-loop feedback to realize continuous impedance matching. According to the invention, real-time, continuous and high-precision dynamic matching of impedance in a multi-protocol hot switching scene is realized through the electric control dielectric characteristics of the quantum dot array, and the problems of switching delay, mechanical loss and narrow adjustment range in a traditional scheme are solved. The bottleneck of the traditional data transmission rate is broken through, and the high-speed interconnection reliability and performance are guaranteed.

The invention discloses a multi-cycle laminated Si-based InAs / GaAs quantum dot array structure and a preparation method thereof. The multi-cycle laminated Si-based InAs / GaAs quantum dot array structure comprises a Si substrate; the SiO2 mask layer covers the Si substrate, and the SiO2 mask layer is provided with a circular hole array which is arranged in a matrix and is used for exposing a Si substrate area below the SiO2 mask layer; a GaAs nanowire buffer layer and a plurality of periodically stacked InAs / GaAs vertical coupling quantum dot units are sequentially grown on the Si substrate exposed in each circular hole from bottom to top; each unit comprises a GaAs nanowire layer, an InAs quantum dot layer, an In < x > Ga < 1-x > As cover layer and a GaAs cover layer which are sequentially stacked from bottom to top; and the epitaxial structure also comprises an AlyGa1-yAs cladding layer which coats the side surfaces of all the epitaxial layers in the circular hole. A plurality of periodically stacked InAs / GaAs vertical coupling quantum dot units constructed by the invention effectively inhibit the lateral diffusion of In atoms, and solve the problem of blue shift of light-emitting wavelength; the light-emitting wavelength can be accurately regulated and controlled to a 1.3 [mu] m communication wave band.

The application relates to a method for preparing a high-resolution quantum dot light-emitting diode based on a capillary effect driven quantum dot self-assembly, and belongs to the technical field of light-emitting diodes and other light-emitting devices. The high-resolution quantum dot light-emitting diode is prepared in the order of a substrate-hollow injection layer-hollow transmission layer-light-emitting layer-electron transmission layer-metal electrode, wherein the preparation method of the light-emitting layer is as follows: firstly, a strip-shaped groove is formed in a polymer through hot nano-imprinting; quantum dots are deposited into the polymer groove through a solution method; under the driving of a capillary effect, the quantum dots move to the inner wall of the polymer groove and are accumulated into quantum dot strips; after the polymer substrate with the quantum dot array deposited thereon is transferred to the substrate, the substrate is immersed in a hot solvent to remove the polymer, and the light-emitting quantum dot array is left. The method is simple to operate, high in yield, and suitable for large-scale industrial production of high-resolution quantum dot light-emitting diodes.

The invention discloses a low-noise near-infrared single-photon avalanche detector and a preparation method thereof, the low-noise near-infrared single-photon avalanche detector comprises an n-type InP substrate, and an InP buffer layer, a GaAs < 0.51 > Sb < 0.49 > absorption layer, an In Ga < 1-a > As Sb < 1-b > energy band gradient layer, a composite charge layer containing an indium quantum dot array, an InP avalanche layer and an i-InP diffusion layer which grow on the front surface of the n-type InP substrate from bottom to top in sequence, the composite charge layer containing the indium quantum dot array comprises an InP gradient charge layer, an In quantum dot deposition layer and an InP constant charge thin layer which are sequentially grown from bottom to top. On the premise of keeping high photon detection efficiency of the detector, the dark counting rate and the post-pulse probability of the detector can be effectively reduced, and the performance and the reliability of the detector are remarkably improved.

The invention belongs to the technical field of stress sensing, and particularly relates to equipment and a method for realizing nano / nanosecond scale stress sensing of a high-speed vehicle, which can realize nano / nanosecond scale high-precision stress monitoring for a to-be-detected structure. The quantum dot array film composite material with a zero-pressure spectrum and a spectrum-stress curve independent from each other is prepared by utilizing the characteristics of the quantum dot spectrum related to the size and the type of the quantum dots. The size of the quantum dots is nanoscale, and the pressure-induced spectral shift sensitivity of the quantum dots can reach nanosecond magnitude, so that the composite material can realize nano / nanosecond-scale stress sensing. Furthermore, a fluorescence capture device integrated by a light beam emitting device and a micro spectrometer is adopted to monitor the fluorescence spectrum of the quantum dots in the vehicle operation process, and finally the real-time load spectrum of the to-be-measured part is obtained through a calibration formula in the software integration system.

The invention relates to the technical field of brain-computer interfaces, and discloses a brain-computer interface system based on quantum nerve coupling and miniature nuclear fusion energy supply and an enhancement method. The quantum neural chip is composed of a boron phosphide quantum dot array, the distance between quantum dots is smaller than or equal to 5 nm, and the quantum neural chip is coupled with neurons through the quantum tunneling effect; the neural mimicry processing module adopts a pulse neural network (SNN) to analyze a multi-modal neural signal in real time and integrates a dynamic synaptic weight adjustment unit; the miniature nuclear energy-gathering energy supply module is designed based on a star simulator, the deuterium and tritium fuel loading capacity is smaller than or equal to 1 mg, the constraint magnetic field intensity is larger than or equal to 5 T, and the output power density is larger than or equal to 0.5 W / cm < 2 >.

A quantum dot structure comprises a two-dimensional quantum dot array and a micromagnet array comprising a plurality of micromagnets arranged in a periodic micromagnet configuration. The plurality of micromagnets form a magnetic field comprising local maxima and local minima in a plane defined by the two-dimensional quantum dot array. Each of a first part of the quantum dots is located at a local maximum of the magnetic field and each of a second part of the quantum dots is located at a local minimum of the magnetic field. The micromagnet configuration can form a tessellation of the quantum dot structure based on a wallpaper group.

The invention provides a quantum dot patterning preparation method based on a corner two-dimensional material, and relates to the technical field of quantum dot growth. The method comprises the following steps: preparing two-dimensional materials with Van der Waals layered structures on at least two substrates respectively; detecting the crystal orientation of each two-dimensional material, and under the condition of determining that the crystal orientations of at least two two-dimensional materials are consistent, taking one two-dimensional material as a reference, and superposing the other two-dimensional material on the two-dimensional material as the reference at a preset corner to generate a corner two-dimensional material Moire superlattice; the corner two-dimensional material Moire superlattice serves as an epitaxial substrate, a quantum dot material grows in a Van der Waals epitaxy mode, and the growth face of the epitaxial substrate represents the Van der Waals surface, without dangling bonds, of the corner two-dimensional material Moire superlattice; and based on the periodic surface potential of the Moire superlattice of the corner two-dimensional material, controlling the quantum dots to be periodically arranged on the growth surface of the epitaxial substrate, and finally preparing a regular quantum dot array structure.

The invention relates to the field of building decoration materials, in particular to a preparation method of bionic intelligent wood grain glass. The preparation method of the bionic intelligent wood grain glass comprises the following steps: step 1, substrate nanocrystallization treatment: performing a chemical frosting process on a substrate to form a pit array; 2, laser holographic plate making, wherein femtosecond laser engraving is adopted, and a microstructure of the growth wheel is generated; step 3, quantum dot dyeing: loading a photochromic quantum dot array to realize a fluorescence effect excited by ultraviolet light; 4, micro-capsule implantation, wherein temperature-sensitive composite fibers containing lignin are implanted, and temperature response is achieved; step 5, bionic self-assembly: preparing a fiber inner core and a lignin composite sheath layer through an electrostatic spinning technology; and 6, intelligent curing: grafting an acrylate temperature-sensitive polymer to obtain the bionic intelligent wood grain glass. According to the invention, a four-dimensional bionic technology is adopted, and a multi-sensory bionic effect is realized by combining 3D morphology, dynamic optics, temperature-sensitive touch and smell simulation.

The invention provides a surface enhanced Raman spectrum chip. The surface enhanced Raman spectrum chip comprises a substrate and a quantum dot array manufactured on the substrate. The substrate is made of a single crystal oxide having a crystal orientation (001) perpendicular to a major surface of the substrate. The quantum dots are made of a single crystal material selected from the group consisting of gold, silver, copper, platinum, iron, cobalt, nickel, ruthenium, rhodium, palladium and alloys thereof. The quantum dot array has an average thickness equal to or less than 3.0 + / -0.5 nm, and has a pitch between adjacent quantum dots of 0.5 nm to 5 nm. The surface enhanced Raman spectrum chip shows excellent performance in the aspect of chiral molecule detection.

The invention relates to the technical field of LED epitaxial wafers, in particular to an LED epitaxial wafer, a preparation method of the LED epitaxial wafer and an LED chip, and the method comprises the following steps: firstly, carrying out cleaning and hydrofluoric acid etching treatment on a sapphire substrate, and growing a Sn-doped Li5GaO8 buffer layer through pulse laser deposition; then growing an n-type GaN layer through a chemical vapor deposition method, preparing a ZnGa2O4 seed layer through pulsed laser deposition, forming an InGaN quantum dot array through strain induced phase separation, then constructing a gradient In component quantum well, depositing a BaTiO3 ferroelectric layer through magnetron sputtering, and neutralizing a built-in electric field through electron beam polarization; and finally, growing a gradient doped p-type GaN layer by adopting a circulating annealing process, and assembling a KZnPO4 nanosheet ordered array on the surface of the gradient doped p-type GaN layer by adopting a vertical pulling technology. Therefore, the problems of poor heat dissipation, low luminous efficiency, high efficiency attenuation, short service life and the like of the LED epitaxial wafer are solved.

A method of controlling random charge effects originating from local defects (202-1, 202-2, 202-3) above a quantum dot in a quantum dot array is described, wherein the method comprises: selecting one or more electrodes (Vg, Vb) configured to control one or more quantum structures formed in one or more semiconductor layers arranged on a substrate; and, applying one or more first voltage pulses (inset) to the one or more selected electrodes, the amplitude of the one or more first voltage pulses being selected to induce a shift in one or more charge states (210-1, 210-2, 210-3) of one or more offset charges in one or more dielectric, semiconductor and / or interface layers between the one or more selected electrodes (Vg, Vb) and the one or more semiconductor layers in which the one or more quantum dots are formed by the application of voltages on one or more electrodes (Vg, Vb).

The application provides a method for preparing a high-resolution full-color quantum dot light-emitting diode with a barrier layer. A full-color light-emitting layer is prepared by the following method: first, forming a strip-shaped groove by hot nano-imprinting polymer, and depositing a non-light-emitting material into the polymer groove by a solution method to form a stripe; then, depositing a first quantum dot into the gap between the stripes by a solution method, and then longitudinally transferring the shaped quantum dot to a substrate; then, immersing the substrate into a hot solvent to wash away the polymer, so as to leave the first quantum dot stripe wrapped by the non-light-emitting stripe; then, transversely transferring a second quantum dot stripe by the same method; finally, depositing a third quantum dot into the blank position of the cross stripe of the first and second quantum dots by a solution method, so as to form a full-color quantum dot array blocked by the non-light-emitting stripe.

The invention provides a quantum processing apparatus, the apparatus comprising at least one array of bilinear quantum dots, each array configured to accommodate a plurality of spin qubits. The apparatus further includes a controller configured to control coherent transmission of one or more of the plurality of qubits within each array to implement a quantum error correction code (QECC), where the QECC encodes a set state of the spin qubits of the respective array as corresponding first level (L1) logical qubits.

Barrier-gate configurations for quantum-dot structures are disclosed, as well as methods to operate quantum-dot structures provided with such barrier-gate configurations and methods to fabricate quantum-dot structures provided with such barrier-gate configurations. The quantum-dot structure (300) comprises a quantum-dot array, e.g., a two-dimensional quantum-dot array or a three-dimensional quantum-dot array. Each quantum dot (304) in the quantum-dot array is provided with a plunger gate (106). The quantum-dot structure further comprises a plurality of barrier gates (108, 308), each barrier gate of the plurality of barrier gates separating two neighbouring quantum-dots in the quantum-dot array. The barrier gates are arranged in lines and at least two of the lines are galvanically connected. Since the barrier gate lines are interconnected, the number of barrier gate lines to be connected may be independent from the number of qubits.

The application provides a controllable large-area three-color quantum dot micro-nano array preparation method, which comprises the following steps: regularly jetting different color quantum dot arrays on the surface of a target substrate, using a printing template with an asymmetric wetting micro-column array, and combining with a liquid bridge dewetting growth technology to prepare a large-area micro-nano array with red, green and blue colors arranged alternately. The application can improve the preparation efficiency and product quality; no additive needs to be added in the preparation process, thereby reducing the influence on the later-stage electric injection device; the device preparation process has high repeatability, the template does not need to be repeatedly prepared, and the cost is saved; the application has strong universality, different shape templates can be prepared to obtain different patterned micro-nano structures, and the application is suitable for different solutions; the application can be prepared on a large scale, thereby solving the problem that the traditional technology cannot be prepared on a large scale. The application realizes the preparation of the three primary color quantum dot arrays arranged alternately on different substries in a controllable manner, is expected to realize large-scale industrial production, and provides a new solution for the design and manufacture of display devices on a large scale.

Quantum electronic device comprising: - an active area (20) for hosting quantum dots and, - flush on one face of the device: a) a plurality of grid lines (G11, G12, G13, G14), electrically isolated from each other and each covering a part of the active area (20), and b) re-establishment facilitation islands (I4-I7, I4a-I7a) at a rate of at least one island per grid line, the re-establishment facilitation islands being separated from each other by a distance (D1, D2, D3), each re-establishment facilitation island comprising a flank along which a lateral part (P4-P7) of a grid line extends, the device further comprising at least one electrical contact (P4-P7) for contacting at least one given grid line (G11, G12, G13, G14),at least one electrical contact being located at least on the lateral part of the given grid line extending along the flank of a contact re-establishment facilitation island (I4-I7, I4a-I7a). Figure for the abbreviation: 14,

The invention discloses a supply chain management system based on Internet of Things coding, and relates to the technical field of multi-chain collaborative evidence storage, and the system comprises a quantum coding module which is used for preparing an InAs quantum dot array and generating a quantum coding sequence through quantum coding; the environment sensing module is used for acquiring supply chain node environment parameters in real time, performing space-time association binding on the quantum coding sequence and the supply chain node environment parameters by adopting a federated Kalman filtering algorithm, and generating a structured data packet; and the coding compensation module dynamically selects a coding modulation strategy according to the structured data packet, and generates an anti-interference enhanced data packet through convolution operation of a quantum coding sequence and a compensation parameter. According to the method, the dynamic coding sequence is generated through the spin entanglement state of the InAs quantum dot array, accurate space-time correlation between the coding sequence and the environmental parameters is realized in combination with the federated Kalman filtering algorithm, and the completeness and the anti-interference capability of supply chain data under complex working conditions are ensured.

An elementary cell for a two-dimensional array of quantum dots, said elementary cell extending along a main plane and including: a plurality of sites occupied by quantum dots capable of confining at least one spin qubit and including at least: a first quantum dot, a second quantum dot adjacent to the first quantum dot in a first direction of the main plane, and a third quantum dot adjacent to the first quantum dot in a second direction of the main plane; and a first blocking site adjacent to the second and third quantum dots, towards which a spin qubit cannot be displaced.

The application discloses a kind of quantum parameter optimization and air-ground collaborative perception's drainage port dynamic management system, it is related to intelligent city drainage system technical field, the system includes: data perception layer, for through air-based remote sensing, ground sensor and video monitoring equipment acquisition drainage port and its surrounding environment Multisource Heterogeneous Data;Computational processing layer is used to the multisource Heterogeneous Data is quantum state encoding and cross-modal fusion;Decision support layer is based on the data after cross-modal fusion carries out abnormal identification, and based on quantum optimization algorithm carries out flood prediction and deduction, finally through the collaborative decision-making platform of extended reality platform and quantum dot array rendering engine, support multi-user immersive interactive operation.The system not only can be widely applied to urban drainage pipe network, flood control and drainage facilities daily operation and maintenance, more have the actual combat capability of coping with extreme weather and sudden disaster, can effectively support the depth development of intelligent water system.

The present disclosure provides a method for preparing a micro-LED device, a micro-LED device, and a display device. The method comprises: obtaining a micro-LED structure comprising a micro-LED unit array; disposing an array of spacer structures on a light-emitting side surface of the micro-LED structure, each spacer structure comprising a reflective material layer and a first protective layer disposed on its sidewall; disposing a refractive material layer on the top surface of the spacer structure, such that the refractive material layer covers the top surface of the reflective material layer and the top surface of the first protective layer, each spacer structure and the corresponding refractive material layer forming an isolation structure, and forming a receiving space between two adjacent spacer structures, all of the receiving spaces forming an array of receiving spaces corresponding to the micro-LED unit array, the difference between the refractive index of the refractive material layer and the refractive index of the first protective layer being greater than a preset value; and filling the array of receiving spaces with quantum dots to form a quantum dot array, thereby obtaining a micro-LED device.

The invention relates to the technical field of new energy, and particularly provides a system (Q-Photocell for short) for realizing carrier composite blocking through quantum dot array physical isolation and synchronously completing solar power generation and electronic potential energy storage, which breaks through the Porcley-Queisseria efficiency limit of a traditional photovoltaic cell, replaces a traditional PN junction built-in electric field with an external direct-current electric field, and improves the efficiency of the photovoltaic cell. A photon-generated carrier is driven to directionally migrate across a distance of over a millimeter level, and direct storage of electronic potential energy is realized in a P-type quantum well; the invention relates to the technical field of solar energy utilization, in particular to a nanocrystalline device integrating photovoltaic power generation, quantum confinement energy storage and ecological negative ion release, and the function conversion between an energy storage module and a negative ion generation module is realized through a switchable electronic switch.

This invention relates to the field of connector technology, and more particularly to a method and connector for adaptive impedance matching based on a protocol, comprising the following steps: A. Embedding a quantum dot array in the dielectric layer of the connector signal transmission; B. Real-time detection of the communication protocol type accessed by the connector, generating a protocol identification signal; C. Retrieving the target impedance value Z from a pre-stored multi-protocol impedance database based on the protocol identification signal. target D. Applying a bias voltage to control the electron tunneling probability P of the quantum dot t E. Based on electron tunneling probability P t Change the equivalent dielectric constant ε eff The distributed capacitance value C is dynamically adjusted; F is used to correct the bias voltage through closed-loop feedback to achieve continuous impedance matching. This invention utilizes the electrically controlled dielectric properties of a quantum dot array to achieve real-time, continuous, and high-precision dynamic impedance matching in multi-protocol hot-switching scenarios, solving the problems of switching delay, mechanical loss, and narrow adjustment range inherent in traditional solutions. It breaks through the bottleneck of traditional data transmission rates, ensuring the reliability and performance of high-speed interconnects.

The present invention is a novel and useful apparatus and method of sensing spin state to enhance spin-qubit readout in qubit arrays, in particular, a single electron box (SEB) based spin state charge sensing circuit and related control algorithms for quantum charge sensing in a quantum dot array. To overcome limitations of thermal noise and scalability issues, the system utilizes floating lead readout mechanisms to amplify potential shifts and multi-island architectures that leverage Coulomb interactions for higher-temperature operation. An adaptive golden mean control mechanism mitigates nonlinear dynamics and signal drift. By identifying the steepest slope of the sensor signal for maximum sensitivity, the system employs rule-based feedback and reinforcement learning (RL) agents to dynamically tune control gate voltages. These agents maximize the differentiation between charge states by adjusting the step magnitude or autonomously determining the full control gate voltage, ensuring high-fidelity, autonomous sensor stabilization in complex, noisy quantum environments.

The invention relates to a broadband spectrum integrated spectrometer which comprises a reading circuit and a quantum dot array photosensitive layer located on one side of the reading circuit, and the quantum dot array photosensitive layer comprises quantum dot photosensitive material units aiming at different response wavebands. The response wave band comprises an X-ray wave band, an ultraviolet light wave band, a visible light wave band and an infrared light wave band. Therefore, the quantum dots can directly convert received optical signals into electric signals through the photoelectric effect, the quantum dot photosensitive material units of different corresponding wavebands can convert optical signals of different wavelengths into electric signals, and the electric signals are output through the reading circuit, so that complex optical beam splitting systems and steps in a traditional spectrometer are avoided, the structure is simplified, and the cost is reduced. And the limitation problem caused by mechanical adjustment of the light splitting element is improved, the portability, the response speed and the precision of the spectrometer are improved, and the application field and application of the spectrometer are expanded.

A quantum device comprising an array of quantum dots is disclosed. The quantum device comprises a silicon layer in which quantum dots (201) can be induced by respective gates; gates of the inducible quantum dots (201) for controlling an electrical potential that define the induced quantum dots (201); and integrated circuit elements (204), in particular comprising floating gate field effect transistors, for controlling the voltages of the respective gates, the integrated circuit elements (204) having non-volatile resistance value, RF, which are tunable. The integrated circuit elements (204) have input voltages (Vin) and an output voltages (Vout), wherein the output voltages are dependent on the input voltages and the non-volatile resistance values RF of the different integrated circuit elements. The integrated circuit elements (204) are electrically connected such that their respective output voltages are applied to the gates of the respective inducible quantum dot (201). The gates of the individual quantum dots can thus be addressed using a single input voltage.

A backlight unit, a down-conversion medium including the backlight unit, and a display device including the down-conversion medium are provided. The backlight unit includes a light source configured to generate blue light; and an optical film configured to absorb a portion of the blue light generated from the light source to generate red light and green light, wherein the optical film includes a quantum dot array having a semimetallic element oxide embedded therein.