116 results about "Quantum dot array" patented technology

The invention relates to a method for preparing a quantum dot photodetection array device based on ink-jet printing technology. The method is characterized by carrying out plasma and chloroform processing on a substrate; then, printing a metal electrode array and a quantum dot array on the substrate through an ink-jet printer with metal electrode ink and quantum dot ink respectively; and finally, carrying out current and voltage test in the dark and any monochromatic light source environment. The method for preparing the quantum dot photodetection array device based on the ink-jet printing technology is simple in preparation technology, and can carry out large-scale production; and the photodetection device adopts quantum dots, so that the photodetection device has a better photosensitive characteristic for any excitation light source.

Metal quantum dots are incorporated into doped source and drain regions of a MOSFET array to assist in controlling transistor performance by altering the energy gap of the semiconductor crystal. In a first example, the quantum dots are incorporated into ion-doped source and drain regions. In a second example, the quantum dots are incorporated into epitaxially doped source and drain regions.

Incorporation of metallic quantum dots (e.g., silver bromide (AgBr) films) into the source and drain regions of a MOSFET can assist in controlling the transistor performance by tuning the threshold voltage. If the silver bromide film is rich in bromine atoms, anion quantum dots are deposited, and the AgBr energy gap is altered so as to increase V_t. If the silver bromide film is rich in silver atoms, cation quantum dots are deposited, and the AgBr energy gap is altered so as to decrease V_t. Atomic layer deposition (ALD) of neutral quantum dots of different sizes also varies V_t. Use of a mass spectrometer during film deposition can assist in varying the composition of the quantum dot film. The metallic quantum dots can be incorporated into ion-doped source and drain regions. Alternatively, the metallic quantum dots can be incorporated into epitaxially doped source and drain regions.

A semiconductor laser comprises an electrically isolated active section and at least one noise reducing section and operates on a ground state transition of a quantum dot array having inhomogeneous broadening greater than 10 nm. The laser preferably emits more than 10 optical modes such that a total relative intensity noise of each optical mode is less than 0.2% in the 0.001 GHz to 10 GHz range. The spectral power density is preferably higher than 2 mW/nm. An optical transmission system and a method of operating a quantum dot laser with low relative intensity noise of each optical mode are also disclosed.

The method includes following steps: firstly alumina molding board is made by using electrochemical method;the molding board with highly ordered pore space structure is transplanted to semiconductor base plat; the natural quantum dot of nano-silicon is grown on the semiconductor base plate through the pore of the molding board by using PECVD; finally the aluminum molding board will be removed by using wet chemical method. The artificial quantum dot obtained by the invention has following features: average diameter is 30-50 nanometers; height is 20-30 nanometers; separation is 100 nanometers; area density is over 1X1010 /cm2;a plenty of silica natural quantum dots whose diameter are from 3-6 nanometers are embedded into each artificial quantum dot.

The invention discloses a method for manufacturing a field-effect transistor based on a quantum dot film conducting channel. The advanced quantum dot assembly technology is utilized, a single CdSe quantum dot array film is assembled out on a silicon/silicon dioxide substrate to serve as the conducting channel of the field-effect transistor, Cr/Au composite metal electrodes are formed on the single CdSe quantum dot array film and the substrate silicon of the film through a graphical mask covering evaporation process technology respectively, a source electrode, a drain electrode and a grid electrode are correspondingly led out, the quantum dot channel is effectively packaged and protected by spin-coating of organic matter, and consequently the novel field-effect transistor based on the quantum dot film conducting channel is manufactured out. The manufacturing method is novel, low in manufacturing cost, simple in manufacturing process, accurate and controllable, the manufactured field-effect transistor is provided with the special quantum dot array film conducting channel, the quantum size effect of the quantum dot array film can be fully utilized, and therefore the sensitivity of the transistor is effectively improved, and the method has very significant application value in novel photoelectric devices.

Novel use of a cladded quantum dot array layer serving as a waveguide channel by sandwiching it between two cladding layers comprised of lower index of refraction materials is described to form Si nanophotonic devices and integrated circuits. The photonic device structure is compatible with Si nanoelectronics using conventional, quantum dot gate (QDG), and quantum dot channel (QDC) FET based logic, memories, and other integrated circuits.

The invention relates to a sequential controllable nanometer silicon quantum dot array resistive random access memory and a preparation method thereof, and belongs to the technical field of non-volatile memories. The resistive random access memory comprises P and a silicon substrate material, and is characterized by also comprising a resistive silicon quantum dot multilayer film nanometer column array attached to the substrate material and an upper electrode and a lower electrode which are attached to the upper surface of the resistive silicon quantum dot multilayer film nanometer column array and the lower surface of the substrate; an insulating medium layer is arranged in the resistive multilayer film nanometer column array; and a silicon quantum dot multilayer film nanometer column is formed by at least two layers of silicon-enriched silicon nitride films which are inlaid with nanometer silicon quantum dots and have different nitrogen components or a silicon-enriched silicon oxide film sublayer which is inlaid with the nanometer silicon quantum dots and has different oxygen components. The sequential controllable nanometer silicon quantum dot array resistive random access memory can be compatible with the current micro-electronic process technology, and can show the advantage of sequential controllable nanometer silicon in resistive random access memory materials to fulfillthe aim of improving the switch ratio and stability of the resistive materials, so that nanometer silicon quantum dots are applied in silica-based nanometer memories in future.

The invention provides a method of self-assembly growth of a large-area, even and ordered Ge quantum dot array on a Si substrate by sputtering deposition. The method includes preparation of ultrathin Si-based AAO (anodic aluminum oxide), preparation of a pattern substrate by nano-pore replication, and self-assembly growth of the even, ordered Ge quantum dot array on the surface of the pattern substrate by ion beam sputtering. Quantum dot growth process matching with the pattern substrate is obtained by controlling ion beam sputtering deposition temperature, ion beam flux voltage, and buffer layer thickness, so that Ge quantum dot nano-pores evenly and orderly grow at nucleation center. Even-size Ge quantum dots obtained are in hexagonal symmetrical distribution on the surface of the Si substrate, and the diameter of the quantum dots is adjustable. The method effectively overcomes the defects that distribution of the self-assembled Ge/Si quantum dots is random and disorder in position, the size is uneven, controllability is low, and preparation cost is high. The large-area, even, ordered and small-sized Ge quantum dot array is prepared at low cost. The method is applicable to manufacture of devices such as silicon-base quantum-dot light emitters, quantum-dot photoelectric detectors and efficient quantum-dot solar cells.

The invention discloses a quantum point material structure. The structure comprises a gallium arsenide GaAs substrate (10) for supporting the whole quantum point material structure, an epitaxial layer structure growing on the GaAs substrate (10) and comprising buffer layers (11,12,13) and an InAs quantum point layer (14), wherein the buffer layer comprises a GaAs buffer layer (11), an InxGa(1-x)As order variable buffer layer (12) and an InyGa(1-y)As single component layer (13) which grows in order on the substrate; and the InAs quantum point layer (14) grows on the InyGa(1-y)As single component layer (13). The invention further discloses a growth method of the quantum point material structure. With the inventive method, the large-area quantum points with ordered distribution are prepared by using the simple preparation process, the process is simple without special treatment of the substrate before growth and is completely compatible with the molecular beam epitaxy process. Additionally, the method is suitable for the bulk production of self-organization ordered-arrangement quantum point array material, which is significant for the quantum point material to be applied to the future quantum devices.

The invention provides a quantum dot display panel and a display device, relates to the technical field of display, and can solve a problem of low luminous efficiency of a quantum dot display device.The quantum dot display panel is provided with a plurality of sub-pixels. The quantum dot display panel comprises a quantum dot array, a first lens array and a dimming layer. The quantum dot array comprises a plurality of quantum dot luminous layers arranged at intervals, wherein one quantum dot luminous layer is arranged in one sub-pixel. The first lens array is arranged on the light emitting side of the quantum dot array and comprises a plurality of first lenses arranged at intervals. One lens is arranged in one sub-pixel, and the first lens is used for emitting parallel light. The dimming layer is arranged on the light emitting side of the first lens array and is provided with a plurality of dimming regions with adjustable transmittance. One dimming region is arranged in one sub-pixel.The display device comprises the quantum dot display panel provided by the invention.

The invention discloses a quantum dot spectral imaging system which comprises a front telescope, a quantum dot array plate, and an image detector arranged in order. The image detector is at the back focal plane of the front telescope. According to the quantum dot array plate, quantum dot materials with different spectral transmission rate characteristics are parallelly made on a substrate along a spectral dimension direction, each quantum dot material covers one or more rows of detection pixels in the spectral dimension direction, and a quantum dot strip is formed. The scheme is based on the quantum dot spectral imaging system, compared with a traditional spectral imager, the system has the advantages of stable performance, a high energy utilization rate, a simple structure, a small volume, a light weight and low cost, the complexity and development cost of the system are effectively reduced, the system is suitable for airborne or spaceborne equipment, and especially the application requirement of load miniaturization is satisfied. In addition, an incident spectrum can be restored well by using a spectral reconstruction algorithm.

The invention provides a micro-bolometer based on graphene quantum points. The micro-bolometer comprises a substrate whose middle part is provided with a groove. The graphene quantum points are hanged above the groove and are connected through a graphene strip. Two ends of the graphene strip extend out of a graphene film to cover the substrate at two sides of the groove to form graphene electrodes. The micro-bolometer is characterized in that a hanged island-shaped graphene quantum point array is formed through the micro nano processing technology, the device temperature change in a same incident light power is increased by using the heat insulation effect by groove suspension, the device resistance temperature coefficient is raised by using quantization graphene, and the photoelectric detection is realized based on a micro-bolometer principle. Due to the absorption characteristic of a graphene material in an infrared wave band, the micro-bolometer provided by the invention can be used for the photoelectric detection of middle and far-infrared and terahertz wave bands, and a novel solution is provided for a present infrared photoelectric detector.

A method for building two-dimension orderly distributed Si quantum spot graphic nanameter structure is to process a phase-shift grating form board on the film of a-Si or a-SiNx: H/a-Si: H/a-SiNx: H then to crystallize it by laser interference, the laser beam arrives at surfaces of a-Si film or a-SiNx: H/a-Si: H/a -SiNx: H via the form board to form beam spots of two dimension periodic distribution of the energy density to make a -Si: H film to realize localized crystallization, that is to form nanometer Si quantum spot array of two-dimension space orderly distributed in the film.

The invention discloses a controllable quantum dot array preparing method based on the photo-thermal effect. According to the method, a metal or alloy nanoparticle array serves as a template, the reaction conditions of a quantum dot precursor are controlled through the local surface plasmon thermal effect irritated by a light source, and therefore the preparing site, size and nucleation density ofthe precursor is controlled. The method mainly includes the steps of preprocessing the surface of the substrate, conducting thin-film deposition on surface metal, preparing the metal nanoparticle array, depositing a protecting layer, growing the quantum dot and conducting post-washing on the substrate. The large-area low-cost quantum dot array is prepared through a chemical synthesis method. Themethod can be combined with a semiconductor processing technology, the prepared quantum dot array can be applied for machining and preparing a quantum dot laser device, a single photon light source, asolar cell, a high-efficiency light-emitting diode, a storage and other devices.