20 results about "Quantum dot array" patented technology

The invention discloses a multi-cycle laminated Si-based InAs / GaAs quantum dot array structure and a preparation method thereof. The multi-cycle laminated Si-based InAs / GaAs quantum dot array structure comprises a Si substrate; the SiO2 mask layer covers the Si substrate, and the SiO2 mask layer is provided with a circular hole array which is arranged in a matrix and is used for exposing a Si substrate area below the SiO2 mask layer; a GaAs nanowire buffer layer and a plurality of periodically stacked InAs / GaAs vertical coupling quantum dot units are sequentially grown on the Si substrate exposed in each circular hole from bottom to top; each unit comprises a GaAs nanowire layer, an InAs quantum dot layer, an In < x > Ga < 1-x > As cover layer and a GaAs cover layer which are sequentially stacked from bottom to top; and the epitaxial structure also comprises an AlyGa1-yAs cladding layer which coats the side surfaces of all the epitaxial layers in the circular hole. A plurality of periodically stacked InAs / GaAs vertical coupling quantum dot units constructed by the invention effectively inhibit the lateral diffusion of In atoms, and solve the problem of blue shift of light-emitting wavelength; the light-emitting wavelength can be accurately regulated and controlled to a 1.3 [mu] m communication wave band.

The invention discloses a low-noise near-infrared single-photon avalanche detector and a preparation method thereof, the low-noise near-infrared single-photon avalanche detector comprises an n-type InP substrate, and an InP buffer layer, a GaAs < 0.51 > Sb < 0.49 > absorption layer, an In Ga < 1-a > As Sb < 1-b > energy band gradient layer, a composite charge layer containing an indium quantum dot array, an InP avalanche layer and an i-InP diffusion layer which grow on the front surface of the n-type InP substrate from bottom to top in sequence, the composite charge layer containing the indium quantum dot array comprises an InP gradient charge layer, an In quantum dot deposition layer and an InP constant charge thin layer which are sequentially grown from bottom to top. On the premise of keeping high photon detection efficiency of the detector, the dark counting rate and the post-pulse probability of the detector can be effectively reduced, and the performance and the reliability of the detector are remarkably improved.

A quantum dot structure comprises a two-dimensional quantum dot array and a micromagnet array comprising a plurality of micromagnets arranged in a periodic micromagnet configuration. The plurality of micromagnets form a magnetic field comprising local maxima and local minima in a plane defined by the two-dimensional quantum dot array. Each of a first part of the quantum dots is located at a local maximum of the magnetic field and each of a second part of the quantum dots is located at a local minimum of the magnetic field. The micromagnet configuration can form a tessellation of the quantum dot structure based on a wallpaper group.

The invention provides a quantum dot patterning preparation method based on a corner two-dimensional material, and relates to the technical field of quantum dot growth. The method comprises the following steps: preparing two-dimensional materials with Van der Waals layered structures on at least two substrates respectively; detecting the crystal orientation of each two-dimensional material, and under the condition of determining that the crystal orientations of at least two two-dimensional materials are consistent, taking one two-dimensional material as a reference, and superposing the other two-dimensional material on the two-dimensional material as the reference at a preset corner to generate a corner two-dimensional material Moire superlattice; the corner two-dimensional material Moire superlattice serves as an epitaxial substrate, a quantum dot material grows in a Van der Waals epitaxy mode, and the growth face of the epitaxial substrate represents the Van der Waals surface, without dangling bonds, of the corner two-dimensional material Moire superlattice; and based on the periodic surface potential of the Moire superlattice of the corner two-dimensional material, controlling the quantum dots to be periodically arranged on the growth surface of the epitaxial substrate, and finally preparing a regular quantum dot array structure.

The invention relates to the technical field of LED epitaxial wafers, in particular to an LED epitaxial wafer, a preparation method of the LED epitaxial wafer and an LED chip, and the method comprises the following steps: firstly, carrying out cleaning and hydrofluoric acid etching treatment on a sapphire substrate, and growing a Sn-doped Li5GaO8 buffer layer through pulse laser deposition; then growing an n-type GaN layer through a chemical vapor deposition method, preparing a ZnGa2O4 seed layer through pulsed laser deposition, forming an InGaN quantum dot array through strain induced phase separation, then constructing a gradient In component quantum well, depositing a BaTiO3 ferroelectric layer through magnetron sputtering, and neutralizing a built-in electric field through electron beam polarization; and finally, growing a gradient doped p-type GaN layer by adopting a circulating annealing process, and assembling a KZnPO4 nanosheet ordered array on the surface of the gradient doped p-type GaN layer by adopting a vertical pulling technology. Therefore, the problems of poor heat dissipation, low luminous efficiency, high efficiency attenuation, short service life and the like of the LED epitaxial wafer are solved.

A method of controlling random charge effects originating from local defects (202-1, 202-2, 202-3) above a quantum dot in a quantum dot array is described, wherein the method comprises: selecting one or more electrodes (Vg, Vb) configured to control one or more quantum structures formed in one or more semiconductor layers arranged on a substrate; and, applying one or more first voltage pulses (inset) to the one or more selected electrodes, the amplitude of the one or more first voltage pulses being selected to induce a shift in one or more charge states (210-1, 210-2, 210-3) of one or more offset charges in one or more dielectric, semiconductor and / or interface layers between the one or more selected electrodes (Vg, Vb) and the one or more semiconductor layers in which the one or more quantum dots are formed by the application of voltages on one or more electrodes (Vg, Vb).

Barrier-gate configurations for quantum-dot structures are disclosed, as well as methods to operate quantum-dot structures provided with such barrier-gate configurations and methods to fabricate quantum-dot structures provided with such barrier-gate configurations. The quantum-dot structure (300) comprises a quantum-dot array, e.g., a two-dimensional quantum-dot array or a three-dimensional quantum-dot array. Each quantum dot (304) in the quantum-dot array is provided with a plunger gate (106). The quantum-dot structure further comprises a plurality of barrier gates (108, 308), each barrier gate of the plurality of barrier gates separating two neighbouring quantum-dots in the quantum-dot array. The barrier gates are arranged in lines and at least two of the lines are galvanically connected. Since the barrier gate lines are interconnected, the number of barrier gate lines to be connected may be independent from the number of qubits.

Quantum electronic device comprising: - an active area (20) for hosting quantum dots and, - flush on one face of the device: a) a plurality of grid lines (G11, G12, G13, G14), electrically isolated from each other and each covering a part of the active area (20), and b) re-establishment facilitation islands (I4-I7, I4a-I7a) at a rate of at least one island per grid line, the re-establishment facilitation islands being separated from each other by a distance (D1, D2, D3), each re-establishment facilitation island comprising a flank along which a lateral part (P4-P7) of a grid line extends, the device further comprising at least one electrical contact (P4-P7) for contacting at least one given grid line (G11, G12, G13, G14),at least one electrical contact being located at least on the lateral part of the given grid line extending along the flank of a contact re-establishment facilitation island (I4-I7, I4a-I7a). Figure for the abbreviation: 14,

The application discloses a kind of quantum parameter optimization and air-ground collaborative perception's drainage port dynamic management system, it is related to intelligent city drainage system technical field, the system includes: data perception layer, for through air-based remote sensing, ground sensor and video monitoring equipment acquisition drainage port and its surrounding environment Multisource Heterogeneous Data;Computational processing layer is used to the multisource Heterogeneous Data is quantum state encoding and cross-modal fusion;Decision support layer is based on the data after cross-modal fusion carries out abnormal identification, and based on quantum optimization algorithm carries out flood prediction and deduction, finally through the collaborative decision-making platform of extended reality platform and quantum dot array rendering engine, support multi-user immersive interactive operation.The system not only can be widely applied to urban drainage pipe network, flood control and drainage facilities daily operation and maintenance, more have the actual combat capability of coping with extreme weather and sudden disaster, can effectively support the depth development of intelligent water system.

This invention relates to the field of connector technology, and more particularly to a method and connector for adaptive impedance matching based on a protocol, comprising the following steps: A. Embedding a quantum dot array in the dielectric layer of the connector signal transmission; B. Real-time detection of the communication protocol type accessed by the connector, generating a protocol identification signal; C. Retrieving the target impedance value Z from a pre-stored multi-protocol impedance database based on the protocol identification signal. target D. Applying a bias voltage to control the electron tunneling probability P of the quantum dot t E. Based on electron tunneling probability P t Change the equivalent dielectric constant ε eff The distributed capacitance value C is dynamically adjusted; F is used to correct the bias voltage through closed-loop feedback to achieve continuous impedance matching. This invention utilizes the electrically controlled dielectric properties of a quantum dot array to achieve real-time, continuous, and high-precision dynamic impedance matching in multi-protocol hot-switching scenarios, solving the problems of switching delay, mechanical loss, and narrow adjustment range inherent in traditional solutions. It breaks through the bottleneck of traditional data transmission rates, ensuring the reliability and performance of high-speed interconnects.

The present invention is a novel and useful apparatus and method of sensing spin state to enhance spin-qubit readout in qubit arrays, in particular, a single electron box (SEB) based spin state charge sensing circuit and related control algorithms for quantum charge sensing in a quantum dot array. To overcome limitations of thermal noise and scalability issues, the system utilizes floating lead readout mechanisms to amplify potential shifts and multi-island architectures that leverage Coulomb interactions for higher-temperature operation. An adaptive golden mean control mechanism mitigates nonlinear dynamics and signal drift. By identifying the steepest slope of the sensor signal for maximum sensitivity, the system employs rule-based feedback and reinforcement learning (RL) agents to dynamically tune control gate voltages. These agents maximize the differentiation between charge states by adjusting the step magnitude or autonomously determining the full control gate voltage, ensuring high-fidelity, autonomous sensor stabilization in complex, noisy quantum environments.

The invention relates to a broadband spectrum integrated spectrometer which comprises a reading circuit and a quantum dot array photosensitive layer located on one side of the reading circuit, and the quantum dot array photosensitive layer comprises quantum dot photosensitive material units aiming at different response wavebands. The response wave band comprises an X-ray wave band, an ultraviolet light wave band, a visible light wave band and an infrared light wave band. Therefore, the quantum dots can directly convert received optical signals into electric signals through the photoelectric effect, the quantum dot photosensitive material units of different corresponding wavebands can convert optical signals of different wavelengths into electric signals, and the electric signals are output through the reading circuit, so that complex optical beam splitting systems and steps in a traditional spectrometer are avoided, the structure is simplified, and the cost is reduced. And the limitation problem caused by mechanical adjustment of the light splitting element is improved, the portability, the response speed and the precision of the spectrometer are improved, and the application field and application of the spectrometer are expanded.

A backlight unit, a down-conversion medium including the backlight unit, and a display device including the down-conversion medium are provided. The backlight unit includes a light source configured to generate blue light; and an optical film configured to absorb a portion of the blue light generated from the light source to generate red light and green light, wherein the optical film includes a quantum dot array having a semimetallic element oxide embedded therein.

The invention belongs to the technical field of quantum dot patterned devices and display, and particularly relates to an InP-based patterned QLED device with high efficiency and high resolution and a preparation method thereof. The preparation method comprises the following steps: S1, spin-coating a hole injection layer material on a clean substrate to obtain a hole injection layer; s2, spin-coating a hole transport layer material to obtain a hole transport layer; s3, spin-coating photoresist, carrying out ultraviolet photoetching by using a mask plate, and carrying out developing, washing and baking to obtain a photoresist pixel pit array; s4, dropwise adding the InP quantum dot solution on the substrate with the photoresist pixel pit array, covering the substrate with the micro-column template with asymmetric wettability, enabling the InP quantum dot solution to form a liquid bridge between the substrate and the micro-column template, and uniformly applying a certain balance pressure; s5, the solvent is completely volatilized within 2-6 h, and a light-emitting layer containing a quantum dot array is formed; s6, spin-coating an electron transport layer material to obtain an electron transport layer; and S7, depositing a metal electrode, and packaging.

This invention discloses a method, equipment, and medium for quality control in the production of plant-based beverages, belonging to the field of intelligent food manufacturing and reliable quality engineering technology. This invention pioneers a parallel control system integrating "biological-physical-chemical information flow." The method includes: deploying biomimetic olfactory / taste quantum dot array sensors to capture in real-time the spectra of volatile organic compounds and the spatial distribution of flavor substances during the beverage production process; constructing an inter-process "quality potential energy field" model to guide the optimal transmission path of quality flow using field strength gradients; introducing a digital twin based on evolutionary reinforcement learning, enabling it to autonomously evolve anti-disturbance control strategies in parallel interaction with the physical production line; and finally, transforming key quality evidence into standardized on-chain assets through verifiable credential technology. This invention achieves proactive anti-disturbance, self-evolution, and cross-chain verifiability in quality control.

The invention relates to a textured end face mechanical sealing device of a quantum dot array and a preparation process of the textured end face mechanical sealing device. The textured end face mechanical sealing device comprises a movable ring and a static ring, and the distance between the sealing end face of the movable ring and the sealing end face of the static ring ranges from 0.3 nm to 1 nm; at least one of the moving ring and the static ring is of a textured sealing ring structure; the textured sealing ring structure comprises a base body layer, a quantum dot array composed of a plurality of quantum dot textures arranged in a hexagonal close-packed mode is distributed on the sealing end face of the base body layer, and the quantum dot textures are in a truncated cone shape. The quantum dot array is covered with a hydrogen terminating layer, and top electrodes flush with the quantum dot texture up and down are distributed on the surface of the hydrogen terminating layer; when the distance between the surfaces of the movable ring and the movable ring is smaller than 1 nm, the electron cloud at the top of the quantum dot texture can generate additional repulsive force through the quantum tunneling effect, so that the purpose of effectively reducing, preventing or inhibiting molecular-level adhesion of the sealing end face is achieved, and ultra-low friction and ultra-high pressure resistance can be achieved under the condition that the zero contact state is kept.

The present invention is a novel and useful apparatus and method of sensing spin state to enhance spin-qubit readout in qubit arrays, in particular, a single electron box (SEB) based spin state charge sensing circuit and related control algorithms for quantum charge sensing in a quantum dot array. To overcome limitations of thermal noise and scalability issues, the system utilizes floating lead readout mechanisms to amplify potential shifts and multi-island architectures that leverage Coulomb interactions for higher-temperature operation. An adaptive golden mean control mechanism mitigates nonlinear dynamics and signal drift. By identifying the steepest slope of the sensor signal for maximum sensitivity, the system employs rule-based feedback and reinforcement learning (RL) agents to dynamically tune control gate voltages. These agents maximize the differentiation between charge states by adjusting the step magnitude or autonomously determining the full control gate voltage, ensuring high-fidelity, autonomous sensor stabilization in complex, noisy quantum environments.

One aspect of the invention relates to a quantum device (100) comprising: A semiconductor layer (110) adapted to form a two-dimensional array (115) of quantum dots (1151), the semiconductor layer (110) having a front face (110a), a dielectric (120) disposed on the front face (110a) of the semiconductor layer (110), First gates (131) and second gates (132) for controlling the quantum dots (1151), the first gates (131) and second gates (132) extending directly onto the dielectric (120), each second gate (132) intersecting the first gates (131), Charge detectors (140), each charge detector (140) comprising a conductive island (141) and a charge reservoir (142), the conductive island (141) of each charge detector (140) being formed between two first adjacent grids (131) and directly on the dielectric (120). Figure to be published with the abbreviation: Figure 1

Methods and systems are described for readout of one or more spin states associated with one or more quantum dots in an array of quantum dots, wherein the method comprises: configuring or providing one or more read-out paths of connected quantum dots in the array of quantum dots, the quantum dots of at least one of the one or more read-out paths being configured close to a charge transition point such that a charge transition in one or more first quantum dots at a first end of the tuned read-out path induces a charge transition in one or more second quantum dots at a second end of the tuned read-out path, the second end being connected to a charge detector; configuring one or more quantum dots of the quantum dot array into a spin-to-charge conversion system connected to the first end of the tuned read-out path, the charge convention system including at least two connected quantum dots hosting a spin state or a quantum dot hosting a spin state connected to a reservoir; and, obtaining information about the spin state in the spin-to-charge system, the obtaining information including the charge detector measuring a charge transition in the one or more second quantum dots at a second end of the tuned read-out path.

The invention belongs to the technical field of light-emitting diodes, and particularly discloses an ultrahigh-resolution quantum dot light-emitting diode and a preparation method thereof. The device sequentially comprises a hole injection layer, a hole transmission layer, a quantum dot light-emitting layer, an electron transmission layer and an evaporation electrode. The preparation method is characterized in that the quantum dot light-emitting layer is prepared by the following steps: dropwise adding a quantum dot solution on the hole transport layer, impressing by using a Hard-PDMS hole seal, driving the solution to fill seal micropores by virtue of capillary force, drying, and uncovering the seal, so as to obtain the fine quantum dot array. According to the method, one-step patterning of the quantum dots is achieved by enhancing capillary force guidance, and precise assembly from the micron scale to the nanometer scale is completed. According to the method, professional operators are not needed, the process is simple, a simple, convenient, effective and universal preparation way is provided, low-cost and large-area manufacturing and device integration of the ultra-high-resolution quantum dot light-emitting diode can be achieved, and a new technical path is provided for ultra-high-resolution display.