Method for manufacturing field-effect transistor based on quantum dot film conducting channel

Abstract

The invention discloses a method for manufacturing a field-effect transistor based on a quantum dot film conducting channel. The advanced quantum dot assembly technology is utilized, a single CdSe quantum dot array film is assembled out on a silicon / silicon dioxide substrate to serve as the conducting channel of the field-effect transistor, Cr / Au composite metal electrodes are formed on the single CdSe quantum dot array film and the substrate silicon of the film through a graphical mask covering evaporation process technology respectively, a source electrode, a drain electrode and a grid electrode are correspondingly led out, the quantum dot channel is effectively packaged and protected by spin-coating of organic matter, and consequently the novel field-effect transistor based on the quantum dot film conducting channel is manufactured out. The manufacturing method is novel, low in manufacturing cost, simple in manufacturing process, accurate and controllable, the manufactured field-effect transistor is provided with the special quantum dot array film conducting channel, the quantum size effect of the quantum dot array film can be fully utilized, and therefore the sensitivity of the transistor is effectively improved, and the method has very significant application value in novel photoelectric devices.

Description

technical field [0001] The invention belongs to the field of semiconductor nanometer materials and devices, and in particular relates to a preparation method of a field effect transistor based on a conductive channel of a quantum dot film layer. Background technique [0002] With the development of science and technology and the progress of society, people are increasingly dependent on information storage, transmission and processing. As the main carrier and material basis of information storage, transmission and processing, semiconductor devices and process technology have become a hot spot for many scientists to study. Field effect transistor, as a very important semiconductor device, plays a vital role in the fields of information storage, transmission and processing. However, up to now, most of the field effect transistors currently used on a large scale are thin film field effect transistors, which are semiconductor devices based on microelectronic silicon technology. ...

AI Technical Summary

Problems solved by technology

This traditional thin film field effect transistor based on silicon microelectronics technology has problems such as high equipment requirements, complicated manufacturing process, high cost, limited overall performance of the device, limited sensitivity, switching frequency and speed, etc.

Moreover, with the gradual improvement of people's requirements for high-performance thin-film transistors, thin-film field-effect transistors based on microelectronic silicon technology have been difficult to meet the needs of today's information society for thin-film field-effect transistors with high sensitivity, high switching frequency and switching speed.

Images