Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of preparation method of metal quantum dot/organic semiconductor composite conductive channel thin film transistor

A technology of organic semiconductors and thin film transistors, applied in the field of preparation of metal quantum dots/organic semiconductor composite conductive channel thin film transistors, can solve the problems of limited overall device performance, sensitivity, limited switching frequency and speed, and difficulties in meeting demands Improved sensitivity and output transfer characteristics, flexible and controllable device performance, and novel preparation methods

Active Publication Date: 2017-10-20
FUZHOU UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This traditional thin film field effect transistor based on silicon microelectronics technology has problems such as high equipment requirements, complicated manufacturing process, high cost, limited overall performance of the device, limited sensitivity, switching frequency and speed, etc.
Moreover, with the gradual improvement of people's requirements for high-performance thin-film transistors, thin-film field-effect transistors based on microelectronic silicon technology have been difficult to meet the needs of today's information society for thin-film field-effect transistors with high sensitivity, high switching frequency and switching speed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of metal quantum dot/organic semiconductor composite conductive channel thin film transistor
  • A kind of preparation method of metal quantum dot/organic semiconductor composite conductive channel thin film transistor
  • A kind of preparation method of metal quantum dot/organic semiconductor composite conductive channel thin film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] (1) Weigh metal ion-containing compounds such as silver nitrate or HAuCl4 in proportion: sodium linoleate: absolute ethanol: linoleic acid = 0.3:1.0:5:0.5, then pour the mixture into the reaction kettle, and Add an appropriate amount of deionized water so that the volume of the mixed liquid accounts for 40% of the total volume of the reactor, stir and mix evenly, heat-treat at 20°C for 30 minutes, and then repeatedly deionized water / absolute ethanol and high-speed centrifugation of the reaction product After cleaning, the final product is dispersed in cyclohexane to obtain the corresponding metal quantum dot solution;

[0034] (2) Take a silicon / silicon dioxide substrate with a size of 1cm×1cm and an oxide layer (silicon dioxide film) thickness of 30nm, figure 1 It is a schematic diagram of the silicon / silicon dioxide substrate structure, where 1 is the substrate silicon, and 2 is the silicon dioxide film on the silicon surface. The silicon / silicon dioxide substrate wa...

Embodiment 2

[0039] (1) Weigh metal ion-containing compounds such as silver nitrate or HAuCl4 in proportion: sodium linoleate: absolute ethanol: linoleic acid = 0.7:1.5:10:1.5, then pour the mixture into the reaction kettle, and Add an appropriate amount of deionized water so that the volume of the mixed solution accounts for 50% of the total volume of the reactor, stir and mix evenly, and heat-treat at 140°C for 200 minutes, then repeatedly deionized water / absolute ethanol and high-speed centrifugation of the reaction product After cleaning, the final product is dispersed in cyclohexane to obtain the corresponding metal quantum dot solution;

[0040] (2) Take a silicon / silicon dioxide substrate with a size of 1cm×1cm and an oxide layer thickness of 200nm, figure 1 It is a schematic diagram of the silicon / silicon dioxide substrate structure, where 1 is the substrate silicon, and 2 is the silicon dioxide film on the silicon surface. The silicon / silicon dioxide substrate was cleaned at high...

Embodiment 3

[0045] (1) Weigh metal ion-containing compounds such as silver nitrate or HAuCl4 in proportion: sodium linoleate: absolute ethanol: linoleic acid=1.0: 2.0: 15: 2.5, then pour the mixture into the reaction kettle, and Add an appropriate amount of deionized water so that the volume of the mixed liquid accounts for 60% of the total volume of the reactor, stir and mix evenly, heat-treat at 200°C for 400 minutes, and then repeatedly deionized water / absolute ethanol and high-speed centrifugation of the reaction product After cleaning, the final product is dispersed in cyclohexane to obtain the corresponding metal quantum dot solution;

[0046] (2) Take a silicon / silicon dioxide substrate with a size of 1cm×1cm and an oxide layer thickness of 300nm, figure 1 It is a schematic diagram of the silicon / silicon dioxide substrate structure, where 1 is the substrate silicon, and 2 is the silicon dioxide film on the silicon surface. The silicon / silicon dioxide substrate was cleaned at high ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing a metal quantum dot / organic semiconductor composite conductive channel thin film transistor. On a silicon / silicon dioxide substrate, a metal quantum dot layer and an organic semiconductor layer are sequentially prepared, and then, through a patterned mask Overlay evaporation process technology Metal quantum dots / organic semiconductor composite conductive channel layer surface and the back of the silicon substrate to form Cr / Au composite metal electrodes, as the corresponding source, drain and gate, and then through spin coating The organic matter realizes the effective encapsulation and protection of the quantum dot conductive channel, thereby preparing a new type of metal quantum dot / organic semiconductor composite conductive channel thin film transistor. The preparation method of the present invention is novel, the production cost is low, the preparation process is simple, accurate and controllable, and the on-off ratio and the current value of the metal quantum dot / organic semiconductor composite conductive channel thin film transistor are effectively improved. Therefore, the novel optoelectronic device will have Very important application value.

Description

technical field [0001] The invention relates to the field of semiconductor nanometer materials and devices, in particular to a method for preparing a metal quantum dot / organic semiconductor composite conduction channel thin film transistor. Background technique [0002] With the development of science and technology and the progress of society, people are increasingly dependent on information storage, transmission and processing. As the main carrier and material basis of information storage, transmission and processing, semiconductor devices and process technology have become a hot spot for many scientists to study. Thin film transistors, as a very important semiconductor device, play a vital role in the fields of information storage, transmission and processing. However, as of now, the existing large-scale use of thin-film transistors is a semiconductor device based on silicon technology for microelectronics. This traditional thin film field effect transistor based on sil...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/40H01L51/30
CPCH10K71/12H10K85/00H10K10/00H10K10/488H10K10/88
Inventor 杨尊先郭太良徐胜周雄图钱堃杨洋
Owner FUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com