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A method for preparing an organic semiconductor nanowire array conductive channel thin film transistor

A technology of organic semiconductors and thin film transistors, which is applied in the field of semiconductor nanomaterials and devices, can solve the problems of limited overall device performance, difficulty in meeting demands, and complex preparation processes, and achieve flexible and controllable device performance, lower threshold voltage, and simple preparation processes Effect

Active Publication Date: 2017-09-22
FUZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This traditional thin film field effect transistor based on silicon microelectronics technology has problems such as high equipment requirements, complicated manufacturing process, high cost, limited overall performance of the device, limited sensitivity, switching frequency and speed, etc.
Moreover, with the gradual improvement of people's requirements for high-performance thin-film transistors, thin-film field-effect transistors based on microelectronic silicon technology have been difficult to meet the needs of today's information society for thin-film field-effect transistors with high sensitivity, high switching frequency and switching speed.

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  • A method for preparing an organic semiconductor nanowire array conductive channel thin film transistor
  • A method for preparing an organic semiconductor nanowire array conductive channel thin film transistor
  • A method for preparing an organic semiconductor nanowire array conductive channel thin film transistor

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preparation example Construction

[0028] The invention provides a method for preparing an organic semiconductor nanowire array conductive channel thin film transistor, which is sequentially prepared on a silicon / silicon dioxide substrate by using lift-off technology, spin-coating film-forming technology and capillary infiltration technology. A sacrificial layer ZnO strip array, a photoresist layer containing a nanowire hole array, and an organic semiconductor layer containing an organic nanowire array are formed, and metal electrodes are respectively formed on the organic semiconductor layer of the organic nanowire array and the back of the substrate. And lead out the corresponding source, drain and gate, so as to complete the preparation of organic semiconductor nanowire array conduction channel thin film transistor.

[0029] Further, in this embodiment, the following steps are also included:

[0030] Step S1: Preparation of sacrificial layer ZnO strip array: using sulfuric acid / hydrogen peroxide solution to ...

Embodiment 1

[0045] Step S1: Take a silicon / silicon dioxide substrate with a size of 1cm×1cm and an oxide layer thickness of 30nm, figure 1 It is a schematic diagram of the silicon / silicon dioxide substrate structure, where 1 is the substrate silicon, and 2 is the silicon dioxide film on the silicon surface. The silicon / silicon dioxide substrate was cleaned at high temperature in concentrated sulfuric acid / a small amount of hydrogen peroxide solution for 30 minutes, and a layer of photoresist was coated on the surface of the silicon / silicon dioxide substrate by a spin-coating process, and the photoresist was etched by an electron beam. The strip photoresist array is etched by etching technology, figure 2 Schematic diagram of the silicon / silicon dioxide substrate structure for preparing the sacrificial layer ZnO strip array, image 3 The top view of the silicon / silicon dioxide substrate structure for preparing the sacrificial layer ZnO strip array, wherein 1 is the substrate silicon, 2 is...

Embodiment 2

[0050] Step S1: Take a silicon / silicon dioxide substrate with a size of 1cm×1cm and an oxide layer thickness of 150nm, figure 1 It is a schematic diagram of the silicon / silicon dioxide substrate structure, where 1 is the substrate silicon, and 2 is the silicon dioxide film on the silicon surface. The silicon / silicon dioxide substrate was cleaned at high temperature in concentrated sulfuric acid / a small amount of hydrogen peroxide solution for 30 minutes, and a layer of photoresist was coated on the surface of the silicon / silicon dioxide substrate by a spin-coating process, and the photoresist was etched by an electron beam. The strip photoresist array is etched by etching technology, figure 2 Schematic diagram of the silicon / silicon dioxide substrate structure for preparing the sacrificial layer ZnO strip array, image 3 The top view of the silicon / silicon dioxide substrate structure for preparing the sacrificial layer ZnO strip array, wherein 1 is the substrate silicon, 2 i...

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Abstract

The invention relates to a method for preparing an organic semiconductor nanowire array conductive channel thin film transistor, which is sequentially prepared on a silicon / silicon dioxide substrate by using a lift-off process technology, a spin-coating film-forming process technology and a capillary infiltration process technology. The sacrificial layer ZnO strip array, the photoresist layer containing the nanowire hole array, and the organic semiconductor layer containing the organic nanowire array, respectively form metal electrodes on the surface of the organic semiconductor layer and the back of the silicon wafer substrate, and lead out the corresponding source Electrodes, drains and gates to prepare organic semiconductor nanowire array conduction channel thin film transistors. The preparation method of the present invention is novel, the production cost is low, the preparation process is simple, and it is accurate and controllable. The organic semiconductor nanowire array conductive channel thin film transistor has a special organic nanowire conductive array layer, which effectively reduces the organic semiconductor nanowire array conductive channel film. The threshold voltage of transistors will have very important application value in new optoelectronic devices.

Description

technical field [0001] The invention relates to the field of semiconductor nanometer materials and devices, in particular to a method for preparing an organic semiconductor nanowire array conduction channel thin film transistor. Background technique [0002] With the development of science and technology and the progress of society, people are increasingly dependent on information storage, transmission and processing. As the main carrier and material basis of information storage, transmission and processing, semiconductor devices and process technology have become a hot spot for many scientists to study. Thin film transistors, as a very important semiconductor device, play a vital role in the fields of information storage, transmission and processing. However, as of now, the existing large-scale use of thin-film transistors is a semiconductor device based on silicon technology for microelectronics. This traditional thin film field effect transistor based on silicon microel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/40H01L51/05
CPCH10K71/12H10K77/10H10K10/462Y02E10/549Y02P70/50
Inventor 杨尊先郭太良胡海龙徐胜刘佳慧杨洋
Owner FUZHOU UNIV
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