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A preparation method based on gold/silica core-shell microstructure and molybdenum disulfide composite thin film transistor

A technology of molybdenum disulfide and composite thin film, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, semiconductor device, etc., can solve the problems of sensitivity, limited switching frequency and speed, limited overall performance of the device, and difficulty in meeting the demand, so as to improve electrical The effect of performance, novel preparation method and low production cost

Active Publication Date: 2020-08-11
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This traditional thin film field effect transistor based on silicon microelectronics technology has problems such as high equipment requirements, complicated manufacturing process, high cost, limited overall performance of the device, limited sensitivity, switching frequency and speed, etc.
Moreover, with the gradual improvement of people's requirements for high-performance thin-film transistors, thin-film field-effect transistors based on microelectronic silicon technology have been difficult to meet the needs of today's information society for thin-film field-effect transistors with high sensitivity, high switching frequency and switching speed.

Method used

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  • A preparation method based on gold/silica core-shell microstructure and molybdenum disulfide composite thin film transistor

Examples

Experimental program
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Effect test

Embodiment 1

[0038] (1) Prepare 0.07M ammonium tetrathiomolybdate solution, add it into a 10ml vial; measure 0.9ml of DMF and 0.1ml of ethanolamine into a 10ml vial, mix the three solutions, put the vial Put it into an ultrasonic machine for 30 minutes of ultrasonication, then put it on a magnetic stirrer and stir for about 3 hours, until the solution gradually dissolves and no obvious particles can be seen, and the molybdenum disulfide precursor solution is obtained;

[0039] (2) Measure 200ml of chloroauric acid solution with a graduated cylinder, the concentration of chloroauric acid is 0.005wt%, add it into a 500ml round bottom flask and heat and stir until boiling. Weigh 0.07g of sodium citrate (stable in air at normal temperature) and add 7ml of deionized water to make a sodium citrate solution, the concentration of the sodium citrate solution is 1wt%. Take 1.4ml of sodium citrate solution with a syringe and quickly add it to the above-mentioned flask. At this time, the temperature o...

Embodiment 2

[0046] (1) Prepare 0.1M ammonium tetrathiomolybdate solution, add it into a 10ml vial; measure 1.8ml of DMF and 0.2ml of ethanolamine into a 10ml vial, mix the three solutions, put the vial Put it into an ultrasonic machine for ultrasonication for 50 minutes, then put it on a magnetic stirrer and stir for about 5 hours, until the solution gradually dissolves and no obvious particles can be seen, and the molybdenum disulfide precursor solution is obtained;

[0047] (2) Measure 200ml of chloroauric acid solution with a graduated cylinder, the concentration of chloroauric acid is 0.01wt%, add it into a 500ml round bottom flask and heat and stir until boiling. Weigh 0.14g of sodium citrate (stable in air at room temperature) and add 14ml of deionized water to make a sodium citrate solution, the concentration of which is 1wt%. Take 1.4ml of sodium citrate solution with a syringe and quickly add it to the above-mentioned flask. At this time, the temperature of the solution is about ...

Embodiment 3

[0054] (1) Prepare 0.13M ammonium tetrathiomolybdate solution and add it into a 10ml vial; measure 0.45ml of DMF and 0.05ml of ethanolamine into a 10ml vial, mix the three solutions, put the vial Put it into an ultrasonic machine for ultrasonication for 15 minutes, then put it on a magnetic stirrer and stir for about 1.5 hours, until the solution gradually dissolves and no obvious particles can be seen, and the molybdenum disulfide precursor solution is obtained;

[0055] (2) Measure 100ml of chloroauric acid solution with a measuring cylinder, the heavy concentration of chloroauric acid is 0.015wt%, add it into a 500ml round bottom flask and heat and stir until boiling. Weigh 0.035g of sodium citrate (stable in air at room temperature) and add 3.5ml of deionized water to make a sodium citrate solution, the concentration of the sodium citrate solution is 1wt%. Take 0.7ml of sodium citrate solution with a syringe and quickly add it to the above-mentioned flask. At this time, th...

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Abstract

The invention relates to a preparation method of a gold / SiO2 shell core microstructure and molybdenum disulfide composite structure thin film transistor. A gold / SiO2 shell core microstructure and molybdenum disulfide composite film layer is prepared on a silicon / silica substrate by a spin coating forming process technology, a patterned covering film covering evaporation process technology is usedfor respectively forming Cr / Au composite metal electrodes on a gold / SiO2 shell core microstructure and molybdenum disulfide composite active layer and channel layer, a corresponding source electrode and a drain electrode are led out, and effective encapsulation and protection of quantum dot channels are achieved by spin-coating organic materials, so that the novel gold / SiO2 shell core microstructure and molybdenum disulfide composite structure thin film transistor is fabricated. The preparation method is novel and can effectively improve the electrical properties of the gold / SiO2 shell core microstructure and molybdenum disulfide composite thin film transistor.

Description

technical field [0001] The invention belongs to the field of semiconductor nanomaterials and devices, in particular to a gold / SiO-based 2 The preparation method of the core-shell microstructure-molybdenum disulfide composite structure thin film transistor. Background technique [0002] With the development of science and technology and the progress of society, people are increasingly dependent on information storage, transmission and processing. As the main carrier and material basis of information storage, transmission and processing, semiconductor devices and process technology have become a hot spot for many scientists to study. Thin film transistors, as a very important semiconductor device, play a vital role in the fields of information storage, transmission and processing. However, as of now, the existing large-scale use of thin-film transistors is a semiconductor device based on silicon technology for microelectronics. This traditional thin film field effect transi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/336
CPCH01L29/66265H01L29/78618
Inventor 杨尊先郭太良林诗敏张玉飞黄建华胡海龙周雄图陈耿旭徐胜吴志铭
Owner FUZHOU UNIV
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