Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of silicon and silicon germanium quantum point array

A technology of quantum dots and silicon germanium, which is applied in the field of nanomaterial preparation and application, can solve the problems of low periodicity and order of quantum dots, complex equipment, high production costs, etc., and achieve good application prospects and simple conditions.

Inactive Publication Date: 2006-01-25
TSINGHUA UNIV
View PDF1 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods usually require quite harsh conditions and some complicated equipment, so the production cost is higher
In addition, these methods are difficult to prepare large-area regularly arranged quantum dot arrays, and the periodicity and order of quantum dots are not high.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of silicon and silicon germanium quantum point array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] According to the surface area of ​​the substrate, drop the solution of polystyrene beads with a concentration of 0.01% onto the surface of the cleaned silicon wafer, dry it and keep it warm at 90°C for 6 minutes. Then on the surface of the silicon wafer with the PS ball array arranged, a 25nm (± 3nm) thick Ag film is evaporated with a vacuum evaporation device, and then the sample deposited with the silver film is immersed in a closed container containing a mixed solution of hydrofluoric acid and ferric nitrate After 10 minutes of treatment in a kettle (the concentrations of hydrofluoric acid and ferric nitrate are 1.15 mol / L and 0.0675 mol / L, respectively), silicon quantum dot arrays arranged in a large area can be obtained in an orderly manner.

Embodiment 2

[0023] According to the surface area of ​​the substrate, drop the solution of polystyrene beads with a concentration of 0.01% onto the surface of the cleaned silicon wafer, dry it and keep it warm at 90°C for 6 minutes. Then on the surface of the silicon wafer with the PS ball array arranged, a 50nm (± 5nm) thick Ag film is evaporated with a vacuum evaporation device, and then the sample deposited with the silver film is immersed in a closed container containing a mixed solution of hydrofluoric acid and ferric nitrate After 6 minutes of treatment in the kettle (the concentrations of hydrofluoric acid and ferric nitrate are 2.3 mol / L and 0.0675 mol / L, respectively), silicon quantum dot arrays arranged in a large area can be obtained in an orderly manner.

Embodiment 3

[0025]According to the surface area of ​​the substrate, drop the solution of polystyrene beads with a concentration of 0.1% onto the surface of the cleaned silicon wafer, dry it and keep it warm at 100°C for 5 minutes. Then on the surface of the silicon wafer with the PS ball array arranged, a 100nm (± 10nm) thick Ag film is evaporated with a vacuum evaporation device, and then the sample deposited with the silver film is immersed in a closed container containing a mixed solution of hydrofluoric acid and ferric nitrate After 3 minutes of treatment in a kettle (the concentrations of hydrofluoric acid and ferric nitrate are 4.6 mol / L and 0.135 mol / L, respectively), silicon quantum dot arrays arranged in a large area can be obtained in an orderly manner.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A preparation method for Si and SiGe quantum spot array includes: carrying out acetone vibration cleaning, alcohol vibration cleaning piranha solution and RCA solution process orderly to a silicon chip or silicon chip deposited with a SiGe film then dropping the styroflex small ball solution with the quality percentage concentration sphere of 0.01-0.9% into the surface cleaned silicon chip or that with SiGe film to be put in air for natural drying then to be heat-insulated under 90-110deg.C for 1-6min and depositing an Ag film of 25-100nm on the substrate wit a vacuum plating instrument, immersing the deposited Ag film sample in the etching solution of hydrofluoric acid and ferric nitrate for process.

Description

technical field [0001] The invention relates to a preparation method of silicon and silicon-germanium quantum dot arrays, in particular to a preparation method of large-area and orderly arranged silicon and silicon-germanium quantum dot arrays, and belongs to the technical field of nanomaterial preparation and application. Background technique [0002] Since the integration of optoelectronic devices and traditional electronic devices is expected to solve the limitations of VLSI in terms of high-density connections and bandwidth, obtaining high-efficiency silicon or silicon-based materials with light-emitting properties has always been a research hotspot. According to theoretical calculations and existing literature reports, the quasi-zero-dimensional disk (dot) structure of silicon and silicon germanium quantum dot arrays can localize electron-hole pairs, thereby reducing the probability of non-radiative recombination and increasing luminous efficiency. Therefore, the resear...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L33/00H01S5/00B82B3/00
Inventor 黄智鹏吴茵朱静
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com