The invention provides a preparation method of a flexible HZO ferroelectric
memristor based on an all-solution method. The preparation method comprises the steps that S1, a
mica sheet is used as a flexible substrate layer after being cleaned; s2, mixing a
graphene conductive coating and
ethanol according to a
mass ratio of 1: 1000, stirring, carrying out ultrasonic treatment, layering
graphene to obtain a mixture, uniformly dispensing the obtained mixture on the upper surface of the flexible substrate layer prepared in the S1, and heating and curing to prepare a bottom
electrode layer; s3, mixing and stirring HfCl4
powder, ZrCl4
powder, an
ethanol solution and deionized water according to a weight ratio of 1: 1: 10: 5, and performing ultrasonic treatment to obtain an HZO precursor solution; spin-
coating the HZO precursor solution on the upper surface of the bottom
electrode layer, and performing high-temperature annealing to form a nerve bionic layer; and S4, uniformly
coating Pt conductive
slurry on the upper surface of the nerve bionic layer prepared in the S3, and heating and curing to form the top
electrode. The method effectively overcomes the problems of film forming difficulty and
ferroelectric crystal structure regulation and control in the prior art, and has the advantages of simplicity, convenience and low cost.