The present invention relates to a method for controlling
metal impurities on the surface of
silicon wafers. The method comprises the following steps: providing a
silicon wafer; performing a
wetting treatment by spraying
ultrapure water on the
silicon wafer to fully wet the surface of the silicon
wafer;
drying the silicon wafer with a fully wetted surface; repeating the steps of the
wetting treatment and the
drying treatment; performing an acid
solution treatment by treating the surface of the silicon wafer with an acid solution to obtain a treatment solution; performing an analysis treatment by using ICPMS to analyze the
metal ion content in the treatment solution; and a judgment step of comparing the detected
metal ion content with a
metal pollution lower limit value to judge whether the
ultrapure water can continue to clean the silicon wafer. Thus, through this method, the
pollution amount of metal ions in the
ultrapure water to the silicon wafer can be detected, the relative influence of the increase or decrease of the metal content on the surface of the silicon wafer by the metal ions in the ultrapure water can be determined, and this method also has the advantages of simple operation and high accuracy rate.