5 results about "Ammonium fluorosilicate" patented technology

A film forming method includes: a preparation process of preparing a substrate having a surface from which a first film without containing silicon and a second film are exposed; a first film formation process of forming a self-assembled monolayer, which has a fluorine-containing functional group and inhibits formation of a third film containing silicon, on the first film; a second film formation process of forming the third film on the second film; a modification process of decomposing the self-assembled monolayer by plasma using a gas containing hydrogen and nitrogen while maintaining a temperature of the substrate to be 70 degrees C. or lower, so that a side portion of the third film, which is formed in a vicinity of the self-assembled monolayer, is modified into ammonium fluorosilicate by active species contained in the decomposed self-assembled monolayer; and a removal process of removing the ammonium fluorosilicate.

The application relates to a method and equipment for in-situ cleaning of a substrate surface for epitaxial growth pretreatment, which continuously performs the following steps in a single process chamber: an etchant generation step of generating an etchant containing NH4F and NH4F.HF by reacting NF3 gas with NH3 gas in a plasma environment; an etching step of reacting the etchant with a silicon oxide layer on the substrate surface to generate solid ammonium fluorosilicate at a temperature of 25 DEG C to 40 DEG C; a sublimation removal step of heating the substrate to 150 DEG C to 200 DEG C to sublimate and decompose the solid ammonium fluorosilicate into gaseous products, and removing the gaseous products from the process chamber; wherein the duration of the sublimation removal step is 1.5 to 3 times the duration required for a single sublimation annealing. By synergistically optimizing the temperature of the etching step and the sublimation volatilization temperature and time of the sublimation removal step, an atomically clean substrate surface with extremely low impurity residue can be stably obtained.

A method for forming a semiconductor device can include providing a substrate having a patterned structure comprising semiconductor materials, where the patterned structure has a side profile including indentations, such as a patterned film stack, and where a spacer layer is conformally deposited over the patterned structure and within the indentations, reacting a surface of the spacer layer with a plasma-excited first etch gas to form a reacted layer on the spacer layer, wherein the plasma-excited first etch gas includes fluorine, hydrogen, and nitrogen, and removing at least part of the reacted layer by ion bombardment from exposure to a plasma-excited second etch gas. The spacer layer can be SiOCN. The reacted layer can be ammonium fluorosilicate. The first etch gas can contain SF6, H2, and N2, or NF3, H2, and N2. The reacting and removing can be done at room temperature in a same chamber.

The invention discloses a method for co-producing high-dispersion white carbon black and electronic-grade fluoride salt by using fluorine-containing silicon slag, which comprises a leaching conversion unit, a solid-liquid separation unit, a modified crystallization reaction unit, a secondary separation and washing unit, a drying and collecting unit and a mother liquor regeneration unit, the method has the advantages that the solid silicon slag is converted into the liquid ammonium fluosilicate solution through the leaching conversion unit, insoluble metal impurities such as iron, calcium and magnesium are thoroughly intercepted and separated by utilizing a solid-liquid phase state conversion mechanism and matching with the solid-liquid separation unit, the problems that the regenerated white carbon black is high in iron content and yellow in color are solved from the source, and the method is suitable for industrial production. The purity of the prepared product silicon dioxide can reach 99.5% or above; a process of combining in-situ modification and gradient ammonolysis is adopted, a dispersing agent is introduced in the initial stage of silicon dioxide crystal nucleus formation to construct a soft template, and hard agglomeration of primary particles is effectively blocked in cooperation with precise pH gradient control; the modified crystallization reaction adopts a three-section pH control method, so that the crystal quality is greatly improved.

The invention provides mesoporous silica and a preparation method thereof. The preparation method of the mesoporous silica comprises the following steps: obtaining a mixed system containing a first silicon source precursor, a soft template reagent and a second silicon source precursor; carrying out a sol-gel reaction on the double-silicon-source mixed system, carrying out solid-liquid separation, and collecting a solid phase to obtain a mesoporous silica precursor; wherein the first silicon source precursor comprises sodium silicate; the second silicon source precursor comprises sodium fluosilicate and / or ammonium fluosilicate. According to the method for preparing the mesoporous silicon dioxide, a double-silicon-source synergistic hydrolysis method is creatively used, the mesoporous silicon dioxide with a high specific surface area is prepared under the condition that an additional acid reagent or alkali reagent is not needed, and a brand new method is provided for synthesis of the mesoporous silicon dioxide.