The invention relates to a method for realizing bonding growth of
rare earth doped
fluoride and pure
fluoride crystals, and belongs to the technical field of
crystal growth. Aiming at the technical problems of high requirement on
polishing quality of a pre-bonding surface, sudden change of
refractive index of a bonding interface, limited bonding area and the like in the existing
crystal bonding method, one of a pure
fluoride host
crystal or a
rare earth doped fluoride crystal is selected as a
seed crystal; then weighing and mixing the raw materials according to the stoichiometric ratio of another bonded crystal component, pressing the raw materials into a
raw material block, finally putting the
seed crystal and the
raw material block into a
crucible in sequence, and realizing the bonding growth of the
rare earth doped fluoride and pure fluoride crystal by adopting a
temperature gradient method or a Bridgman-Stockbarger method. And finally obtaining the
composite crystal formed by bonding the pure fluoride crystal and the rare earth
ion doped fluoride crystal. According to the
composite crystal grown by the method, sudden change of the
refractive index at the bonding interface is avoided, the preparation cost of the
composite crystal element is reduced, and the
laser performance of the bonding
gain element is improved.