Device for simultaneously growing various CaF2 doped crystals and preparation method based on device

A crystal and crystal growth technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., to achieve the effect of high crystal quality, short growth cycle, visible and controllable growth process

Active Publication Date: 2017-03-15
TONGJI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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But at present, there is a lot about using the guided mode meth

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  • Device for simultaneously growing various CaF2 doped crystals and preparation method based on device

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Experimental program
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Embodiment 1

[0040] Such as figure 1 As shown, this embodiment simultaneously grows a variety of doped CaF 2 The crystal device includes a tray 1, an insulation cylinder 2 arranged on the tray 1, an induction coil 3 sleeved on the insulation cylinder 2, a bottom insulation layer 4 arranged in the insulation cylinder 2 from bottom to top, a crucible 5, The growth mold unit, the seed crystal 7 and the seed crystal rod 8, the seed crystal 7 is fixed on the bottom end of the seed crystal rod 8, and is arranged directly above the growth mold unit through the seed crystal rod 8, and the bottom of the crucible 5 is provided with a pusher. The rod 9 is arranged directly below the growth mold unit through the push rod 9. The crucible 5 is provided with two crucible partitions 10 arranged in parallel to each other. The crucible partition 10 divides the inner cavity of the crucible 5 into 3 There are two crystal growth intervals that are independent and not interlinked with each other (i.e. the firs...

Embodiment 2

[0060] In this embodiment, four crucible partitions 10 arranged parallel to each other are arranged in the crucible 5, and the crucible partition 10 divides the inner cavity of the crucible 5 into five crystal growth sections that are independent and not connected to each other. The growth mold unit includes Five crystal growth molds are respectively set corresponding to the crystal growth intervals one by one.

[0061] The crucible cover plate 6 is uniformly provided with five mold slots corresponding to the crystal growth molds one by one, and the crystal growth molds are inserted and fixed in the corresponding mold slots. A mold slit with a width of 0.3 mm is opened on the crystal growth mold, and the height of the crystal growth mold is 3 mm smaller than the depth of the corresponding crystal growth zone.

[0062] The distance between the seed crystal 7 and the mold opening of the crystal growth mold is 10mm.

[0063] The device of this embodiment is used to simultaneousl...

Embodiment 3

[0075] In this embodiment, three crucible partitions 10 arranged parallel to each other are arranged in the crucible 5, and the crucible partition 10 divides the inner cavity of the crucible 5 into four crystal growth sections that are independent of each other and do not communicate with each other. The growth mold unit includes 4 crystal growth molds respectively set corresponding to the crystal growth intervals one by one.

[0076] The crucible cover plate 6 is evenly provided with four mold slots corresponding to the crystal growth molds one by one, and the crystal growth molds are inserted and fixed in the corresponding mold slots. A mold slit with a width of 0.4 mm is opened on the crystal growth mold, and the height of the crystal growth mold is 4 mm smaller than the depth of the corresponding crystal growth zone.

[0077] The distance between the seed crystal 7 and the mold opening of the crystal growth mold is 20mm.

[0078] The device of this embodiment is used to s...

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Abstract

The invention relates to a device for simultaneously growing various CaF2 doped crystals and a preparation method based on the device. The device comprises a tray, a heat insulating barrel, an induction coil, a bottom heat insulating layer, a crucible, a growth mold unit, seed crystals and a seed crystal rod, the bottom heat insulating layer, the crucible, the growth mold unit, the seed crystals and the seed crystal rod are sequentially arranged in the heat insulating barrel from bottom to top, the seed crystals are fixed at the bottom end of the seed crystal rod and can be vertically and movably arranged right above the growth mold unit, a plurality of mutually parallel crucible partitions are arranged in the crucible, an inner cavity of the crucible is divided into a plurality of mutually independent crystal growth intervals by the crucible partitions, the crystal growth intervals are not mutually communicated, and the growth mold unit comprises a plurality of crystal growth molds in one-to-one correspondence to the crystal growth intervals. Compared with the prior art, the device is low in growth cost, short in growth cycle, applicable to a plurality of other fluoride crystals, the crystals with various doping concentrations simultaneously grow, growth is protected by inert gas, anaerobic impurities are omitted, growth processes are visible and controllable, and crystal quality is high.

Description

technical field [0001] The invention belongs to the technical field of crystal material preparation, and relates to a method for simultaneously growing multiple doped CaF 2 A crystal device and a fabrication method based on the device. Background technique [0002] Alkaline-earth fluoride crystal is a traditional crystal material. Because of its excellent optical and physical and chemical properties, as well as unique structural characteristics, it has always played a very important role in both industrial applications and scientific research. With the rapid development of science and technology, new application prospects of alkaline earth fluoride crystals are constantly emerging. In terms of industrial applications, alkaline earth fluoride crystals can be used as window materials in the vacuum ultraviolet to infrared band due to their wide transmission wavelength range. At the same time, the low refractive index and low dispersion characteristics also make the alkaline e...

Claims

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Application Information

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IPC IPC(8): C30B15/34C30B29/12
CPCC30B15/34C30B29/12
Inventor 王庆国徐军罗平吴锋唐慧丽刘军芳刘斌王东海
Owner TONGJI UNIV
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