Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of graphene quantum dot

A technology of graphene quantum dots and mass ratio, applied in graphene, chemical instruments and methods, nanotechnology for materials and surface science, etc., can solve the problems of unavailable raw materials, low yield, cumbersome preparation process, etc. Achieve the effects of fast preparation process, high yield and simple conditions

Active Publication Date: 2014-08-27
INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS +1
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This type of method can better control the size and shape of the prepared graphene quantum dots, bu

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of graphene quantum dot
  • Preparation method of graphene quantum dot
  • Preparation method of graphene quantum dot

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0047] Example 1:

[0048] Add 50g polytetrafluoroethylene (PTFE, 2μm) and 14g Si powder (100nm) to cyclohexane at room temperature, magnetically stir for 1 hour to make it evenly mixed, and place it in a closed explosive after vacuum drying; The electric ignition method initiates the deflagration reaction. After the reaction is completed, the obtained carbon products are collected and placed in a muffle furnace at 300°C for heat treatment to remove unreacted PTFE and NaOH concentrated solutions at 50°C to remove unreacted Si. After cooling, , The product is washed alternately with ethanol and water, and dried in a vacuum drying oven to obtain graphene quantum dot polymer nanoparticles.

[0049] Graphene quantum dot polymer nanoparticles are exfoliated by Hummer method to prepare graphene oxide quantum dots. The specific steps are: weigh 0.5g graphene quantum dot polymer nanoparticles, add 12mL concentrated sulfuric acid and 1.5g potassium permanganate under ice bath conditions Af...

Example Embodiment

[0053] Example 2

[0054] Add 50g of polytetrafluoroethylene (PTFE, 2μm) and 42g of Si powder (100nm) to cyclohexane at room temperature, magnetically stir for 1 hour to make it evenly mixed, and place it in a closed explosive after vacuum drying; others The steps are the same as in Example 1.

[0055] Picture 10 This is a high-resolution transmission electron microscope photo of the prepared graphene quantum dot polymer nanoparticles. It can be seen from the photo that the carbon material prepared by the deflagration method is composed of graphene quantum dots with a size of about 20 nm and a thickness of about 5 Layer graphite structure.

Example Embodiment

[0056] Example 3

[0057] Add 50g polytetrafluoroethylene (PTFE, 300nm) and 14g Si powder (100nm) to cyclohexane at room temperature, magnetically stir for 1 hour to make it evenly mixed, and place it in a closed explosive after vacuum drying; others The steps are the same as in Example 1.

[0058] Picture 11 It is a high-resolution transmission electron microscope photo of the prepared graphene quantum dot polymer nanoparticles. From the photo, it can be seen that the graphene quantum dots prepared by reducing the size of the reactants are slightly larger in size, about 50nm, and about It is a 15-layer graphite structure. This may be due to the small size of the reactant ions leading to an increase in the reaction rate, resulting in an increase in the temperature of the deflagration flame and an extension of the growth process of carbon atoms, so that the size of the graphene quantum dots grown Increased.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Sizeaaaaaaaaaa
Thicknessaaaaaaaaaa
Sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method of a graphene quantum dot. The preparation method comprises the following steps: I, adding polytetrafluoroethylene and silicon powder in a certain weight ratio into cyclohexane at room temperature, uniformly mixing, drying and placing in a sealed exploder; II, initiating a deflagration reaction, collecting a reaction product after reaction, removing unreacted polytetrafluoroethylene and silicon powder, cooling, cleaning the product and drying to obtain graphene quantum dot polymerized nano particles; and III, stripping the obtained graphene quantum dot polymerized nano particles to obtain the graphene quantum dot. The preparation method of the graphene quantum dot provided by the invention is simple and convenient, simple in equipment used and short in time consumed, can be prepared on a large scale within a short time and is convenient for industrialized production.

Description

technical field [0001] The invention relates to the synthesis of an inorganic nanometer material, in particular to a preparation method of graphene quantum dots. Background technique [0002] Graphene quantum dots (graphene quantum dots, GQDs) exhibit strong quantum confinement effects and boundary effects due to their size below 10nm, so they are very useful in many fields such as solar optoelectronic devices, biomedicine, light-emitting diodes and sensors. Attractive application prospects. So far, researchers at home and abroad have researched and developed many methods for preparing graphene quantum dots. In general, two broad categories can be distinguished: top-down and bottom-up approaches. The top-down approach can be viewed as a dicing and exfoliation process of carbon materials, mainly involving photolithography of graphene [see: Ponomarenko L.A.; Schedin F.; Katsnelson M.I.; Yang R.; Hill E.W.; Novoselov K.S.; Geim A.K. Chaotic Dirac Billiard in Graphene Quantum...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B31/04C09K11/65B82Y30/00C01B32/184
Inventor 杨光成刘有松沈金朋李瑞杨云涛
Owner INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com