67results about How to "Short growth time" patented technology

A process for preparing zinc oxide nanotubes by hydrothermal decomposing and growth includes such steps as dripping concentrated ammonia water in the solution of zinc chloride while stirring, regulating pH=9-11, sealing, ultrasonic treating, putting a clean and electrically conductive substrate in the solution, sealing again, laying a side at 80-98 deg.C, natural cooling, ageing, taking the substrate, flushing with deionized water, and natural drying to obtain the zinc oxide nanotubes on the surface of substrate.

The invention discloses a preparation method of a composite transparent electrode with a metal membrane wrapped by in-situ growth graphene. The preparation method comprises the steps that step S1, a crack template is manufactured; step S2, a mesh metal membrane is deposited; step S3, the crack template is removed; and step S4, in-situ selective growth of graphene is performed. The protection reliability of the graphene membrane for the mesh metal membrane can be ensured, and the optical transmittance, the conductivity, the mechanical property and the environmental stability of the composite transparent electrode can be enhanced so that the preparation method has the advantages of being suitable for wide-range and low-cost preparation of the composite transparent electrode, simple in step, less in process and short in growth time and can reduce reaction temperature.

The invention relates to a novel soilless cultivation method of leeches, and belongs to the technical field of cultivation of aquatic animals. According to the method, top openings of net cages are closed, the net cages are fixed to fresh water holders, a certain distance exists between every two net cages, 100-500 artificially-bred seedlings of which the average weight is 10mg are thrown in each net cage of the base area being 0.5m<2>, after the average weight of the seedlings is greater than 500mg, and the seedlings are transferred into another net cages to continue being cultivated, or 20-200 wild seedlings of which the average weight is 0.5-4g are thrown in each net cage of the base area being 0.5m<2>; main food of the weight being 20 times that of the leeches is thrown in the cultivation process, the food is updated regularly, and the leeches are directly poured out to be harvested after being cultivated for 60-120 days. The average weight of the leeches exceeds 20g, and the size of the leeches reaches the use standard of medical leeches. The method is easy to operate, land is not occupied, food resources include natural planktons besides main snail food, the openings of the net cages are closed to prevent natural enemies and the like, and the method saves cost and is high in economic benefit.

The invention discloses a sintering synthesis method for nanometer negative expansion ceramic Zr2(WO4)(PO4)2, which belongs to the field of inorganic non-metallic materials. According to the invention, ZrO2, WO3 and P2O5 are used as raw materials; the raw materials are weighed according to a stoichiometric ratio of Zr to W to P in the target product Zr2(WO4)(PO4)2 of 2: 1: 2; MgO which accounts for 0.5 to 1.5% of the total weight of the raw materials of ZrO2, WO3 and P2O5 is added, MgO and the raw materials are ground and uniformly mixed, then are dried, and then are ground and uniformly mixed again, and an obtained mixture is subjected to direct one-step sintering synthesis or to one-step sintering synthesis after performing, and a product obtained after sintering synthesis is quenched in the air so as to obtain the target product; wherein, sintering parameters are: temperature 1350 to 1450 DEG C, time 2 to 20 min. The invention has the advantages of a simple process, no pollution, a fast sintering speed and suitability for large scale production; Zr2(WO4)(PO4)2 has an average particle size in order of magnitude of hundreds of nanometers.

The invention relates to a preparation method of a graphene quantum dot. The preparation method comprises the following steps: I, adding polytetrafluoroethylene and silicon powder in a certain weight ratio into cyclohexane at room temperature, uniformly mixing, drying and placing in a sealed exploder; II, initiating a deflagration reaction, collecting a reaction product after reaction, removing unreacted polytetrafluoroethylene and silicon powder, cooling, cleaning the product and drying to obtain graphene quantum dot polymerized nano particles; and III, stripping the obtained graphene quantum dot polymerized nano particles to obtain the graphene quantum dot. The preparation method of the graphene quantum dot provided by the invention is simple and convenient, simple in equipment used and short in time consumed, can be prepared on a large scale within a short time and is convenient for industrialized production.

The invention discloses a green and high yield cultivation method for regenerated rice and mainly solves the existing technical problem such as rural labor shortage, farmland waste, cost saving, yieldand efficiency increasing and the like. The technical scheme of the method is characterized in that rice varieties with a growth period of 128-135 d are optimized, single-season rice sowing is performed from late March to early April, compound fertilizers comprising quicklime and plant ash are broadcast at a tillering stage, and pH value of soil is adjusted to be larger than 6 and smaller than 7.2; Se-containing foliar fertilizer is sprayed at a wax ripening stage; single-season rice harvest is performed in early August, a harvester with a straw crushing function is used for harvesting during harvesting, the height of retained rice stubble is 10-30 cm, harvested straw is completely crushed into 3-5 cm of rice periods and returned to the field, roots are cultivated, germination is accelerated, and ratoon rice is cultivated; Se-containing foliar fertilizer is sprayed at the initial heading stage of ratoon rice, so that seedlings, especially young ears, increase adsorption of Se, Se-enriched ratoon rice is produced, and absorption of rice to cadmium can be inhibited; and the ratoon rice can be harvested after the ratoon rice is ripe.

The invention discloses a mesa PIN passivation structure. The mesa PIN passivation structure is provided with P-type, I-type and N-type semiconductor layers which form a step layer mesa, wherein the I-type semiconductor layer is an InGaAs absorption layer; and a Fe-doped semi-insulating InGaAs layer grows on a side wall of the InGaAs absorption layer. The invention further discloses a high-speed mesa InGaAs photodiode and a preparation method thereof. The problem of electric leakage of an existing mesa PIN side surface passivation structure can be solved, and the chip performance is improved;and moreover, the process is simple, and the rate of finished products is high.

The invention provides a method for cultivating pachyrhizua angulatus tissue culture seedlings by means of plant growth lamps. The method comprises the following steps of putting up a greenhouse, determining and customizing the plant growth lights, selecting a seedling-raising substrate, selecting pachyrhizua angulatus tissue culture seedlings, raising the seedlings and conducting seedling-raising management. The greenhouse adopts an ordinary steel frame structure, one side of the greenhouse is provided with a rolling gate used for being rolled up or laid down, and therefore the temperature in the greenhouse is adjusted; each plant growth lamp adopts an LED of which the lamp head power is 3 W, and a 220 v alternating current power supply is adopted to serve as a luminous source, wherein the ratio of red-light lamp heads to blue-light lamp heads is 7:2; the substrate is prepared from clean loess, yellow sand and organic fertilizer, the ratio of clean loess to yellow sand to organic fertilizer is 1 to 1 to 0.2, and the organic fertilizer is prepared by evenly blending and fermenting sheep manure, chicken manure, peanut bran and tea bran according to the proportion of 1:1:0.5:0.2. The survival rate of the pachyrhizua angulatus tissue culture seedlings cultivated through the method is high, and compared with the situation that seedling raising can be conducted only in February and March in the prior art, by means of the method, seedling raising can be advanced to be conducted from December of previous year, the peak that kudzuvine rhizomes appear on the market in a centralized mode is avoided, the economic benefit is improved, and the time cost is reduced.

The invention belongs to the technical field of two-dimensional material heterojunction optical detection, and particularly relates to a two-dimensional tungsten disulfide self-configuration homojunction, a preparation method and application thereof. The preparation method includes: placing tungsten disulfide powder in the middle of a tube furnace through a physical vapor deposition method, and placing a silicon wafer with silicon dioxide on the surface on the downstream of the tube furnace; in a nitrogen atmosphere, raising the temperature to 1100-1150DEG C, carrying out reverse ventilation before the heat preservation temperature is reached to obtain a silicon wafer grown with two-dimensional tungsten disulfide, then performing photoresist spin coating, heating and photoetching on the silicon wafer, controlling the channel width of a photoetching plate to fold two-dimensional tungsten disulfide, then performing development, then building electrodes at two ends of a homojunction successfully, thus obtaining the two-dimensional tungsten disulfide self-configuration homojunction, which has a good optical detection application prospect.

The invention provides a Candida thaimueangensis G70 with the conservation number of CGMCC No.3000 and capable of subjecting vegetable-pickling waste water to the weak alkaline treatment, and a method for the weak alkaline treatment of the vegetable-pickling waste water by using the strain. The Candida thaimueangensis G70 (CGMCC No.3000) is a strain which has strong salinity resistance and wide pH growth scope as well as which can rise pH of the vegetable-pickling waste water from acidity to weak alkalinity and remove partial COD of the waste water in a very short time, thus greatly reducing treatment cost of the vegetable-pickling waste water; the strain has simple culture method, fast growth speed and easiness for sedimentation and can be used for the weak alkaline treatment of vegetable-pickling waste water. The strain has preferable application prospect in the treatment of vegetable-pickling waste water.

The invention discloses a technology for cultivating edible fungi by straw wood manufacturing. The aim of cultivating the edible fungi by the straw wood manufacturing is achieved according to the steps of raw material selection, straw squeezing, inoculation, mycelium culture and fruiting management. The technology has the benefits that according to the straw wood manufacturing, straw is manufactured into imitated straw wood blocks, a physical space similar to that of wood is created, nutritional requirements for mycelium growth are met on the basis of inhibiting excess mycelium breeding, the growth quantity of mycelia can be in an appropriate range, and the mycelia can be subjected to nutritional absorption and conversion in a substantially natural mode, so that the yield of the edible fungi is increased, the basswood cultivation effect is achieved, the quality of mushroom products is improved, the economic benefit is increased, the income of fungus farmers is increased, waste products can be utilized, energy is saved, the environment is protected, and the using effect is good.

The invention provides a preparation method of Ga doped ZnO nanowires catalyzed by Sn, belonging to the field of photoelectron information functional materials and relating to a preparation technology of doped ZnO nanowires. In the method, a large amount of Ga doped ZnO nanowires are obtained on a silicon wafer on which a gold film is plated by using a chemical vapor deposition method through catalysis of Sn, wherein the diameter of the nanowire is about 25-90nm, the length of the nanowire is 10-20mu m, doped content of Ga is 0.5-15at.%, and the content of Sn is 0.5-6at.%. According to the invention, the content of Sn is controlled, the luminescent property of the Ga doped ZnO nanowire is ensured while effectively improving the topography of ZnO, thereby enlarging the application range of original fields of ZnO; and because used airflow amount is small, the growth time is relatively short, thus the method has the advantages of low cost, high efficiency and no environmental pollution, and is simple to operate.

The invention discloses a preparation method for a black arsenic-phosphorus crystal. The preparation method comprises the following steps: (1) mixing an arsenic and phosphorus mixture, tin powder andtin tetraiodide according to a mass ratio of (10-60): (1-3): (0.5-1.5), carrying out vacuum packaging, then heating a mixed material to 700 DEG C to 800 DEG C, and maintaining the temperature for 2 to3 h; (2) cooling a mixed material obtained in the step (1) to a temperature of 450 to 550 DEG C, and maintaining the temperature for 3 to 4 h; and (3) cooling a mixed material obtained in the step (2) to a room temperature so as to obtain the black arsenic-phosphorus crystal. The preparation method provided by the invention can prepare a series of black arsenic-phosphorus crystals with an atomicratio, expands band gap changes and application range of black arsenic phosphorus, and realizes large-scale preparation of high-quality black arsenic-phosphorus crystals with adjustable band gap. Meanwhile, by adoption of the tin tetraiodide, the temperature of growth is reduced; the efficiency of transportation is improved; and vacuum equipment can prevent from generating corrosion. In addition,the preparation method provided by the invention has the advantages of high black arsenic phosphorus conversion rate, no generation of impurity phases, short growth time, simple growth equipment and high yield.

The invention discloses an epitaxial layer material stripping method based on a 3D laminated mask substrate, is used for epitaxial growth and stripping of III-V group compound semiconductor materialssuch as GaN, and belongs to the technical field of photoelectrons. The substrate structure comprises a substrate, wherein a bottom mask layer, a middle layer and a top mask layer are sequentially arranged on the substrate; the window of the bottom mask layer and the window of the top mask layer are mutually staggered. The invention also provides a preparation method of the substrate structure andan epitaxial layer stripping method based on the substrate structure. Compared with the prior art, the invention provides a more optimized peelable method, the peeling success rate is improved, the peeling time is shortened, and the peelable method has higher use value.

The invention discloses a method for controlling growing lengths of silicon nanowires. According to the method, a water bath kettle is used for heating so as to control a growing temperature of the silicon nanowires and the growing lengths of the nanowires are controlled by controlling the temperature, and thus, the problem that in the prior art for preparing the silicon nanowires by a wet etching process, the silicon nanowires with large length-width ratios are difficult to generate is solved. The method disclosed by the invention has simple and reliable process and low cost, can be used for batch production and lays a foundation for preparing a nano device on the basis of the silicon nanowires with different length-width ratios.

The invention provides a water-saving and a high-efficient planting method for a sweet patato in dry land. The water-saving and high-efficient planting method for sweet patato in dry land comprises the following steps: early swelled sweet patatoes of short-vine variety are selected, deep ploughing is carried out after autumn harvest of corn or soybean, ploughing depth is 35 cm-40 cm, the first healthy and strong seedlings in a seedling shed are selected as sweet patato seedlings, soil is fertilized, ridged and coated with film after a first rainfall with rainfall capacity of more than 12mm inearly spring and spraying pesticides, when soil temperature in the film is at 12 DEG C to 15 DEG C in mid-April, stem bases of the sweet patato seedlings at the position of 10cm are soaked with a 20%triazophos microcapsule suspension agent, then the sweet patato seedlings are planted, are chemically weeded after 25 d-30 d of plantation, and are harvested in early August to obtain sweet patatoes.The core method for the water-saving and high-efficient planting method for sweet patato is ''one high and seven early'', ''high'' means high planting density, "early" means deep ploughing, early ridging and film coating, early planting, early tuber forming, early weeding, and early harvest, all natural rainfalls are stored in the soil for growth of sweet patatoes, high-efficient untilization of the natural rainfalls is realized, and high-yield plantation of sweet potatoes in dry land is realized.

The invention discloses a tricholorna lobayense culture medium, and relates to the technical field of cultivation. The tricholorna lobayense culture medium is prepared from the following raw materials in parts by weight: 100-150 parts of ramulus mori rods, 100-150 parts of mushroom dregs, 20-30 parts of silkworm excrement, 5-10 parts of a calcium ion solvent, 10-20 parts of quick lime, 20-30 parts of artemisia annua residue powder, 2-5 parts of gypsum, 20-30 parts of rice bran and 350-400 parts of water. Compared with the prior art, according to the adopted culture medium, with the ramulus mori rods and the mushroom dregs as main materials, the ramulus mori rods are easily-available in raw material and low in price; the mushroom dregs are leftovers abandoned by people; the waste is utilized; the cultured tricholorna lobayense and the tricholorna lobayense cultivated by cottonseed hull are the same in nutrient value; the production cost is low; and the growth time is short.

The invention relates to a method for growing a relaxor ferroelectric single crystal by a top seed crystal method, a gradient molten salt crystal growth furnace is adopted to grow the single crystal, a seed rod and a crucible in the growth furnace have rotation adjustability, and the method comprises the following steps: S1, weighing raw materials according to the stoichiometric ratio of the chemical formula of the single crystal, preparing a fluxing agent, mixing the raw materials with the fluxing agent, and stirring to obtain a mixed solution; filling the mixture into a crucible; s2, fixing the seed crystal on a seed crystal rod, and ensuring that the molten salt furnace, the crucible and the center of the seed crystal are on the same line; s3, heating the raw materials to a molten state, keeping the temperature constant for a certain time to obtain a melt, then adjusting the seed crystal to be connected with the liquid level of the melt, finding out the temperature of a saturation point, properly cooling at the supersaturation temperature for crystal growth, adjusting the cooling rate according to the crystal growth speed, and rotating a seed crystal rod and a crucible in the growth process to adjust the convection change of the melt; and S4, when the crystal grows to the required size, lifting the crystal from the melt, cooling and annealing to obtain the large-size relaxor ferroelectric single crystal.

The invention provides a micro LED epitaxial structure. The epitaxial structure at least comprises an N-type layer, a light-emitting layer and a P-type layer. Wherein the light-emitting layer comprises quantum well structures of n periods, the quantum well structure of each period comprises a well layer and a barrier layer, the quantum well structure of n1 periods is defined as a first light-emitting region, the quantum well structure of n2 periods is defined as a second light-emitting region, n1 and n2 are greater than or equal to 1, n1 + n2 is less than or equal to n, and the first light-emitting region is closer to the N-type layer. The average band gap of the barrier layer materials of the two groups of light-emitting regions meets the following conditions: the first light-emitting region is smaller than the second light-emitting region; the average band gap of the well layer materials of the two groups of light-emitting regions satisfies the following condition: the first light-emitting region is greater than or equal to the second light-emitting region. According to the micro LED prepared by the epitaxial structure, the current density corresponding to the peak photoelectricconversion efficiency can be lower than 1A/cm<2>, and the photoelectric conversion efficiency is improved by about 30%.