16 results about "Lead selenide" patented technology

The invention discloses an n-type lead selenide-based thermoelectric material and a preparation method and application thereof, and belongs to the technical field of energy material preparation. The chemical formula of the n-type lead selenide-based thermoelectric material is Pb < 1-x > CrxSe < 0.998 > Cl < 0.002 > (x is more than or equal to 0.002 and less than or equal to 0.006); according to the material, high-purity raw materials are mixed according to the molar ratio in the chemical formula, and the target lead selenide-based thermoelectric material is prepared by combining a high-temperature smelting method with a discharge plasma sintering method. Through double doping of Cr and Cl elements, the conductivity of the n-type lead selenide-based thermoelectric material is greatly improved and the thermal conductivity of the n-type lead selenide-based thermoelectric material is reduced through the synergistic effect of the Cr and Cl elements, the prepared Pb0. 996Cr0. 04Se0. 998Cl0. 002 material has a high thermoelectric figure of merit at the high temperature of 723 K, and the average thermoelectric figure of merit at the medium and low temperature of 300-673 K reaches 1.037. The thermoelectric figure of merit of the n-type lead selenide-based thermoelectric material can be greatly improved, the conversion efficiency of a thermoelectric power generation device can be improved, and the industrial application of the thermoelectric power generation device can be expanded.

The invention discloses a mid-infrared detection array plane based on gate modulation photoelectric gain, the mid-infrared detection array plane is constructed on a flexible insulating substrate, the mid-infrared detection array plane comprises a plurality of pixel units arranged in a periodic array, and each pixel unit comprises a gate, an insulating layer, a source, an active layer and a drain in sequence from bottom to top; the active layer comprises a lead selenide thin film, a two-dimensional molybdenum disulfide layer and a black phosphorus quantum dot layer which sequentially cover the source electrode; and the source electrodes and the drain electrodes are interdigital and are symmetrically distributed in a staggered manner on a plane projection. According to the mid-infrared detection array plane, flexible switching between a quick response mode and a high-gain mode can be achieved, the detection requirements of high-frequency transient signals and low-frequency slowly-changing signals are considered, meanwhile, the detection sensitivity of mid-infrared signals is improved, noise and dark current are reduced, and the working power consumption of devices is reduced.

This invention discloses a mid-infrared detection array based on gate modulation photoelectric gain. The mid-infrared detection array is constructed on a flexible insulating substrate and includes a plurality of pixel units arranged in a periodic array. From bottom to top, each pixel unit includes: a gate, an insulating layer, a source, an active layer, and a drain. The active layer includes a lead selenide thin film, a two-dimensional molybdenum disulfide layer, and a black phosphorus quantum dot layer sequentially covering the source. Both the source and drain are interdigitated and symmetrically staggered in planar projection. The mid-infrared detection array of this invention can achieve flexible switching between fast response and high gain modes to meet the detection requirements of both high-frequency transient and low-frequency slowly varying signals, while improving the detection sensitivity of mid-infrared signals, reducing noise and dark current, and reducing the power consumption of the device.

The invention discloses a device for emitting infrared heating through lead selenide and application, and relates to the technical field of infrared heating. The device comprises a lead selenide infrared emission assembly, an insulating substrate and a protective shell, the lead selenide infrared emission assembly and the insulating substrate are both arranged in the protective shell, and the lead selenide infrared emission assembly is installed on the insulating substrate; the lead selenide infrared emission assembly is connected with an external power supply through a rectifier; an infrared transmission window is also arranged on the protective shell, and the infrared transmission window is opposite to the lead selenide infrared emission assembly; a blocking piece for sealing the infrared transmission window is arranged at the infrared transmission window, and infrared rays can penetrate through the blocking piece. According to the device, the lead selenide semiconductor material is electrified to excite infrared rays for heating, and the device has the advantages of concentrated infrared band, high response speed, high energy efficiency ratio, long service life, good safety and the like, and is suitable for scenes of medical physiotherapy, heating and the like.

This utility model relates to the field of detector technology, and provides a lead selenide detector with an independent heat dissipation structure. It includes a detector body, with heat dissipation mechanisms fixed to the outer walls of both sides of the detector body. A mounting plate is fixed to the bottom of the detector body, and a support plate is fixed to the bottom of the mounting plate. Disassembly and assembly structures are fixed to both sides of the bottom of the support plate. Each disassembly and assembly structure includes disassembly and assembly seats fixed to both sides of the bottom of the support plate. Connecting blocks are engaged at the bottom of each disassembly and assembly seat, and fixing bolts are threaded to both sides inside each disassembly and assembly seat. This utility model, by providing a disassembly and assembly structure, allows for easy connection of the connecting blocks and disassembly and assembly seats with the help of the fixing bolts. This enables the probe to be installed and disassembled via the connecting blocks, thus achieving the function of easy probe installation and disassembly, and improving the convenience of the lead selenide detector in use.

The invention is applicable to the technical field of materials, and provides a customized lead selenide quantum dot preparation method, which comprises: preparing a lead oleate precursor and a trioctylphosphine-selenium precursor in advance; the temperature of the lead oleate precursor in the first reaction container is stabilized to 170-250 DEG C, after the trioctylphosphine-selenium precursor is injected, the temperature is reduced to 135-215 DEG C, and meanwhile, a second reaction container containing octadecene is heated to the same temperature; transferring the thermocouple and the heating jacket of the container II to the container I, keeping the temperature at 135-215 DEG C, reacting for 15 minutes, adding methylbenzene, and quenching in an ice-water bath; and after subpackaging the product, carrying out centrifugal purification twice by using methanol / ethanol, trichloromethane and acetone to obtain the lead selenide quantum dot with the adjustable luminescence peak position of 1200-2500nm. Continuous adjustment of the spectrum and the half-peak width can be achieved, PLQY can be improved by adding phenylethyl ammonium chloride, uniform particle size is guaranteed through the double-container design, operation is easy, convenient and repeatable, the material can be excited by multiple wavelengths, and the method is suitable for the field of optical devices.

The invention relates to a thermoelectric battery based on an aerogel ultra-black material and a thermoelectric material and a preparation method of the thermoelectric battery. The battery comprises a heat absorption layer, a thermoelectric layer and an electrode layer. The heat absorption layer is made of an ultra-black material of silicon oxide aerogel suspended light absorption nanoparticles, and has high light absorptivity (gt, 98%) and excellent high-temperature-resistant stability and mechanical properties. The thermoelectric layer is made of high-performance thermoelectric materials (such as bismuth telluride (BiTe)-based materials, lead selenide (PbSe), lead telluride (PbTe), silicon germanium alloy (SiGe) and silver-based thermoelectric materials AgSe, AgSbTe and the like), and the temperature difference generated by the heat absorption layer is efficiently converted into electric energy. And the electrode layer is made of a high-conductivity material and is used for collecting and outputting electric energy. The thermoelectric cell provided by the invention has the characteristics of efficient energy conversion, broadband absorption, high temperature resistance and excellent mechanical properties, and is suitable for the fields of solar energy utilization, waste heat recovery, wearable equipment, aerospace and the like.

The application discloses a modified manganese iron lithium phosphate positive electrode material, a positive electrode sheet, a battery and a preparation method. The modified manganese iron lithium phosphate positive electrode material comprises a manganese iron lithium phosphate base body, a carbon coating layer coated on the surface of the manganese iron lithium phosphate base body and a selenide coating layer coated on the surface of the carbon coating layer. The selenide is selected from a mixture of one or more of copper selenide, cadmium selenide, indium selenide, lead selenide and antimony selenide. The problems of low conductivity, low discharge capacity, poor rate performance, poor cycle retention rate and high manganese dissolution rate of the existing manganese iron lithium phosphate positive electrode material are solved.

The application relates to the technical field of inorganic semiconductors, in particular to a two-dimensional layered-non-layered van der Waals heterostructure and a preparation method and application thereof. The preparation method of the two-dimensional layered-non-layered van der Waals heterostructure provided by the application comprises the following steps: a layered molybdenum disulfide nanosheet is prepared on a substrate by using a mechanical stripping method or a gas phase deposition method; a non-layered lead selenide nanosheet is prepared on a mica substrate by using a gas phase deposition method; polymethyl methacrylate is suspended and coated on the mica substrate and heated to form a polymethyl methacrylate supporting film; the mica substrate is removed, and the lead selenide nanosheet is adhered to the polymethyl methacrylate supporting film; the lead selenide nanosheet is placed on the molybdenum disulfide nanosheet, and the polymethyl methacrylate supporting film is dissolved by using an organic solvent, so that the two-dimensional layered-non-layered van der Waals heterostructure is obtained.

The invention discloses a polycrystalline n-type lead selenide thermoelectric material as well as a preparation method and application thereof. The chemical formula of the polycrystalline n-type lead selenide thermoelectric material is [PbSe] < 1-x > [Pb0. 99875 (GaSb) 0.00125 Se] < x >, wherein 0 lt; x is greater than or equal to 0.12; when the polycrystalline n-type lead selenide thermoelectric material is [PbSe] 0.9 [Pb0. 99875 (GaSb) 0.00125 Se] 0.1, the thermoelectric figure of merit is 0.6 under the condition of 300K; according to the thermoelectric refrigeration device made of the n-type [PbSe] 0.9 [Pb0. 99875 (GaSb) 0.00125 Se] 0.1 material and the p-type Bi0. 5Sb1. 5Te3 material, when the hot end temperature is 300K, 323K, 343K and 363K, the obtained maximum refrigeration temperature differences are respectively 30K, 35K, 40K and 45K, and the refrigeration performance of the device is excellent.

The invention discloses a monodisperse lead selenide colloidal quantum dot with adjustable size and a synthesis method thereof, and belongs to the technical field of nano materials. According to the method, a two-step thermal injection technology is adopted, and a high-activity diphenylphosphine selenium precursor and a low-activity tri-n-octylphosphine selenium precursor are respectively used, so that the nucleation and growth kinetic process of the PbSe quantum dots is accurately controlled. Firstly, explosive nucleation is realized by rapidly injecting a high-activity Se source, and then a low-activity Se source is slowly dropwise added to promote uniform epitaxial growth of crystal nucleuses, so that secondary nucleation is effectively inhibited. By adjusting the reaction temperature (80-160 DEG C) and the growth time, the accurate and continuous regulation and control of the first exciton absorption peak of the PbSe quantum dot within the short-wave infrared range of 1100-2600 nm can be realized. The PbSe quantum dot prepared by the invention has excellent monodispersity (size concentration ratio gt, 90%), narrow full width at half maximum (minimum to 25.5 meV), high peak-to-valley ratio and good air stability, and provides an ideal photosensitive material for a high-performance short-wave infrared photoelectric device.

This utility model relates to the field of lead selenide detector technology, specifically a lead selenide detector with adjustable focal length. It includes an instrument body and a base for mounting the instrument body. Two retainers are fixedly connected to the top of the base, and the instrument body is installed within the retainers. A movable plate is slidably mounted on the top of the base, and a placement frame is fixedly connected to the top of the movable plate away from the instrument body. A lens assembly is housed within the placement frame. This utility model features retainers, a movable plate, a placement frame, and a lens assembly. The lens assembly and the placement frame are connected by a plug-in joint, enabling the lens assembly to be detachable and replaceable. This allows for the replacement of lenses of different specifications according to different usage requirements, thereby adjusting the detector's focal length. Simultaneously, adjusting the distance between the lens body and the instrument body also changes the focal length of the instrument body. Furthermore, the retainers and placement frame provide a stable support structure for the instrument body and the lens assembly.

The invention discloses a preparation method of a lead selenide dual-band photoconductive infrared detector. The preparation method comprises the following steps: 1) preparing a lead selenide film on a substrate by using a molecular beam epitaxy / pulse laser deposition growth method; 2) photoetching a single-point pixel on the surface of the lead selenide film; 3) sputtering electrodes at two ends of the pixel; and 4) spin-coating and depositing a quantum dot cadmium selenide film on the surface of the lead selenide film without the electrode. By introducing the CdSe quantum dots and adopting a composite preparation process, original PbSe light guide detection is structurally improved, high-quality integration of PbSe and CdSe materials in a heterostructure is realized, the interface quality of a device is improved, and the service life of a carrier is prolonged. Through a combined process of MBE and spin coating, a PbSe / CdSe heterojunction interface is stable in formation, a response wave band is expanded to visible light from mid-infrared light, and the overall response speed of the device is improved.

The application discloses an n-type lead selenide thermoelectric material and a thermoelectric refrigeration device and a preparation method. 1‑x (GaSb) x Se 1‑y , wherein 0.0001<=x<0.002, 0.0001<=y<=0.007. The prepared Pb 0.99875 (GaSb) 0.00125 Se 0.999 The thermoelectric figure of merit of the material is about 0.6 at room temperature. The thermoelectric refrigeration device made of the n-type Pb 0.99875 (GaSb) 0.00125 Se 0.999 Material and p-type bismuth telluride material, when the temperature of the hot end is 300K, 323K and 343K, the maximum refrigeration temperature difference obtained is 38K, 46K and 56K respectively.

The invention discloses an n-type lead selenide thermoelectric material and a preparation method and application thereof, and belongs to the technical field of thermoelectric material preparation. The chemical formula of the n-type lead selenide thermoelectric material is Pb1-x (AlSb) xSe (x is more than or equal to 0.0025 and less than or equal to 0.006); the material is prepared by combining a hot melting method with a plasma sintering method. According to the Pb1-x (AlSb) xSe thermoelectric material prepared by the method, Al and Sb elementary substances are doped at the Pb position, so that the conductivity of the n-type lead selenide thermoelectric material can be effectively improved. Compared with the existing n-type lead selenide thermoelectric material, the prepared Pb < 0.9965 > (AlSb) 0.0035 Se material has the maximum thermoelectric figure of merit at 923K. The thermoelectric figure of merit of the n-type lead selenide thermoelectric material can be greatly improved, and the high thermoelectric figure of merit is beneficial to improving the conversion efficiency of a thermoelectric power generation device.

The invention discloses a preparation method of a material for improving infrared detection performance by doping tin oxide with lead selenide in situ, and belongs to the field of infrared detection. According to the invention, the function of high-performance detection from ultraviolet to mid-infrared is realized. According to the method, the tin doping process of the lead selenide thin film is completed by adopting lead selenide (PbSe) and tin (Sn) double-target magnetron co-sputtering deposition, and uniform and deep oxidation of the thin film is realized by introducing ionized oxygen in the thin film deposition process. According to the preparation technology of the material for improving the infrared detection performance by doping the tin oxide with the lead selenide in situ, the infrared detection performance of the lead selenide is improved through a simple and effective method, and the material has high application value and particularly has wide application prospects in the fields of infrared detectors, infrared imaging and the like.