Preparation method of lead selenide semiconductor film

A lead selenide and semiconductor technology, which is applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems that the film does not have photoconductive properties, poor stability, and complicated processing technology

Inactive Publication Date: 2012-06-27
AVIC BEIJING INST OF AERONAUTICAL MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention is designed to provide a method for preparing a lead selenide semiconductor thin film in view of the deficiencies in the above-mentioned prior art. processing, and the problem of complex processing and poor stability

Method used

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  • Preparation method of lead selenide semiconductor film
  • Preparation method of lead selenide semiconductor film
  • Preparation method of lead selenide semiconductor film

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Experimental program
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Embodiment 1

[0020] The glass substrate was ultrasonically cleaned in absolute ethanol and acetone for 10 minutes, then washed with deionized water, dried and placed in a vacuum chamber. The distance between the glass substrate and the target was 60 mm. Composite target with a purity of 99.99%, vacuumed to 3.9×10 -5 Pa. During the sputtering process, the working gas is high-purity argon, and the flow rate is 20cm 3 / min, the reaction gas is high-purity oxygen, and the gas flow rate is 2cm 3 / min, the working air pressure in the preparation process is 1.5×10 -1 Pa. The substrate is heated to 100°C. Bombard the surface of the substrate with a 50W power ion source in an argon atmosphere for 10 minutes to remove oxides and other impurities on the surface. Turn on the intermediate frequency power supply, the power is 100W, and feed oxygen at the same time, cut off the power supply after sputtering for 60 minutes, keep vacuum cooling, and take out the film for observation after cooling to r...

Embodiment 2

[0023] The glass substrate was ultrasonically cleaned in absolute ethanol and acetone for 10 minutes, then washed with deionized water, dried and placed in a vacuum chamber. The distance between the glass substrate and the target was 60 mm. Composite target with a purity of 99.99%, vacuumed to 3.6×10 -5 Pa. During the sputtering process, the working gas is high-purity argon, and the flow rate is 20cm 3 / min, the reaction gas is high-purity oxygen, and the gas flow rate is 1.5cm 3 / min, the working air pressure in the preparation process is 1.5×10 -1 Pa. The substrate is heated to 150°C. Bombard the surface of the substrate with a 50W power ion source in an argon atmosphere for 10 minutes to remove oxides and other impurities on the surface. Turn on the intermediate frequency power supply, the power is 150W, and feed oxygen at the same time, cut off the power supply after sputtering for 90 minutes, keep vacuum cooling, and take out the film for observation after cooling to...

Embodiment 3

[0026] The glass substrate was ultrasonically cleaned in absolute ethanol and acetone for 10 minutes, then washed with deionized water, dried and placed in a vacuum chamber. The distance between the glass substrate and the target was 60 mm. Composite target with a purity of 99.99%, vacuumed to 3.9×10 -5 Pa. During the sputtering process, the working gas is high-purity argon, and the flow rate is 20cm 3 / min, no reaction gas is introduced in this embodiment, which is used for photoelectric performance comparison test. The working air pressure in the preparation process is 1.5×10 -1 Pa. The substrate is heated to 100°C. Bombard the surface of the substrate with a 50W power ion source in an argon atmosphere for 10 minutes to remove oxides and other impurities on the surface. Connect the intermediate frequency power supply, the power is 100W. Cut off the power supply after sputtering for 60 minutes, keep vacuum cooling, and take out the film for observation after cooling to ...

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Abstract

The invention provides a preparation method of a lead selenide semiconductor film. The method mainly solves problems of loose film tissue and weak bonding strength with matrix of a film prepared by a traditional chemical method, and also solves problems of lack of photoelectric performance of the film prepared by a traditional chemical method and subsequent sensitization process required. The method employs a non-equilibrium radio frequency magnetron sputtering system and a lead selenide composite target material to prepare a coating; oxygen is introduced during a preparation process; and oxygen flow and sputtering power are adjusted to realize control on the film performance. The compact coating prepared by the invention has good combination performance between the film and the matrix, and good photoelectric response performances. The method is easily practical, uses simple and easily available raw materials and is easy to realize industrialized production.

Description

technical field [0001] The invention relates to a method for preparing a lead selenide semiconductor thin film, which belongs to the technical field of semiconductor thin film material preparation technology. The thin film is a photoelectric thin film responding to mid-infrared bands. Background technique [0002] Lead selenide material is an important narrow-band semiconductor material, which has the advantages of narrow band gap (Eg=0.278eV), high quantum efficiency, good photoelectric effect, low noise, and sensitive response to external conditions. Detectors, infrared two-dimensional imaging displays, photoresistors, light emitters and other devices have a wide range of applications. As early as the 1930s, PbS, which belongs to the same kind of IV-VI semiconductors, was used by the Germans for infrared photoconductive detectors. At present, the US missile warning system uses infrared sensitive components of lead salts, while the French air-to-air missile P60 uses Lead s...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/00C23C14/06
Inventor 罗飞刘大博
Owner AVIC BEIJING INST OF AERONAUTICAL MATERIALS
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