Ultraviolet detector based on gallium oxide nanowire array and preparation method thereof

A nanowire array, gallium oxide technology, applied in semiconductor devices, electrical components, final product manufacturing, etc., can solve the problems of weak signal processing ability, interference, etc., and achieve the effect of sensitive response, stable performance and rapid compounding

Active Publication Date: 2016-06-08
东港智科产业园有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In recent years, most of the semiconductor UV detectors that have been commercialized are not based on "sun-bl

Method used

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  • Ultraviolet detector based on gallium oxide nanowire array and preparation method thereof
  • Ultraviolet detector based on gallium oxide nanowire array and preparation method thereof
  • Ultraviolet detector based on gallium oxide nanowire array and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0031] Proceed as follows:

[0032] 1)Al 2 o 3 Substrate pretreatment: Al 2 o 3 The substrate is put into V(HF):V(H 2 o 2 )=1:5 solution soaked to remove the natural oxide layer, then ultrasonic cleaning with acetone, ethanol and deionized water respectively, and vacuum drying;

[0033] 2) Place the target and substrate: put the gold target and Ga 2 o 3 The targets are respectively placed on the target stage position of the radio frequency magnetron sputtering system, and the Al after step 1) is processed 2 o 3 The substrate is fixed on the sample holder and put into the vacuum chamber; the preparation process of gold nanoparticles: firstly evacuate the chamber, inject argon gas, adjust the pressure in the vacuum chamber, turn on the radio frequency control power supply of the gold target, and 2 o 3 Deposit a layer of gold film on the substrate, then turn off the radio frequency power supply, pass in oxygen, and heat the Al 2 o 3 substrate, in-situ spheroidizing an...

Embodiment 2

[0039] Steps (1), (2) and (5) are all the same as in Example 1. In step (3), the chamber is first evacuated, argon gas is introduced, the pressure in the vacuum chamber is adjusted, and the radio frequency control power supply of the gold target is turned on. 2 o 3 Deposit a layer of gold film on the substrate, then turn off the radio frequency power supply, pass in oxygen, and heat the Al 2 o 3 substrate, in situ spheroid annealing of the gold film to obtain gold nanoparticles; where the gold target and Al 2 o 3 The distance between the substrates is set to 5 cm. After the argon gas is introduced, the pressure of the vacuum chamber is 0.8 Pa. After the oxygen is introduced, the pressure of the vacuum chamber is adjusted to 10 Pa. 3 Pa, the sputtering power is 20W, the deposition time is 20 seconds, the in-situ spheroidizing annealing temperature is 750°C, and the temperature is kept for 0.5 hours. After step 3) the spheroidizing annealing is completed, open the Ga 2 o ...

Embodiment 3

[0042] Steps (1), (2) and (5) are all the same as in Example 1. In step (3), the chamber is first evacuated, argon gas is introduced, the pressure in the vacuum chamber is adjusted, and the radio frequency control power supply of the gold target is turned on. 2 o 3 Deposit a layer of gold film on the substrate, then turn off the radio frequency power supply, pass in oxygen, and heat the Al 2 o 3 substrate, in situ spheroid annealing of the gold film to obtain gold nanoparticles; where the gold target and Al 2 o 3 The distance between the substrates is set to 5 cm. After the argon gas is introduced, the pressure of the vacuum chamber is 0.8 Pa. After the oxygen is introduced, the pressure of the vacuum chamber is adjusted to 10 Pa. 3 Pa, the sputtering power is 20W, the deposition time is 10 seconds, the in-situ spheroidizing annealing temperature is 750°C, and the temperature is kept for 0.5 hours. After step 3) the spheroidizing annealing is completed, open the Ga 2 o ...

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Abstract

The invention relates to an ultraviolet detector based on a nanowire array, in particular to an ultraviolet detector based on a gallium oxide nanowire array and a preparation method thereof. The method comprises the steps that a gold thin film is deposited on an Al2O3 sapphire substrate through the radio frequency magnetron sputtering technology, then, spheroidizing annealing is performed on the obtained gold thin film and therefore gold particles are obtained; finally, Ga2O3 nanowire arrays grow on the gold particles. A photoelectric performance testing result of the ultraviolet detector shows that the detector has the good photoelectric response. The ultraviolet detector has the advantages that the obtained ultraviolet detector based on the gallium oxide nanowire array is stable in performance, has the strong photoelectric response to deep ultraviolet ray of a sun blind region, and is sensitive in reaction, small in dark current, capable of being applied to detection of fire alarm, high-voltage power line corona and the like; in addition, the preparation method has the advantages of being high in technological controllability, easy to operate, good in universality and capable of achieving restorability during repeated tests, and has the great application prospect.

Description

technical field [0001] The invention relates to an ultraviolet detection device of a nanowire array, in particular to an ultraviolet detection device based on a gallium oxide nanowire array and a preparation method thereof. technical background [0002] Because high-voltage line corona, space, missile plume and flames all contain ultraviolet radiation, ultraviolet detection technology is used in many fields such as military affairs, scientific research, aerospace, and communication electronics. β-Ga 2 o 3 It is a semiconductor material with deep ultraviolet characteristics, 200nm β-Ga 2 o 3 The film can achieve a transmittance of more than 80% in the ultraviolet region, making up for the shortcomings of traditional TCO materials in the deep ultraviolet region; and because of the relatively wide band gap, β-Ga 2 o 3 It can emit light with a shorter wavelength, and can also be used to make deep ultraviolet photoelectric devices by doping rare earth elements such as Mn, Cr...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/032H01L31/0352H01L31/18
CPCH01L31/032H01L31/035227H01L31/09H01L31/18Y02P70/50
Inventor 金旺康
Owner 东港智科产业园有限公司
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