Ultraviolet detector based on gallium oxide nanowire array and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 东港智科产业园有限公司
- Publication Date
- 2016-06-08
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Abstract
Description
technical field
[0001] The invention relates to an ultraviolet detection device of a nanowire array, in particular to an ultraviolet detection device based on a gallium oxide nanowire array and a preparation method thereof. technical background
[0002] Because high-voltage line corona, space, missile plume and flames all contain ultraviolet radiation, ultraviolet detection technology is used in many fields such as military affairs, scientific research, aerospace, and communication electronics. β-Ga 2 o 3 It is a semiconductor material with deep ultraviolet characteristics, 200nm β-Ga 2 o 3 The film can achieve a transmittance of more than 80% in the ultraviolet region, making up for the shortcomings of traditional TCO materials in the deep ultraviolet region; and because of the relatively wide band gap, β-Ga 2 o 3 It can emit light with a shorter wavelength, and can also be used to make deep ultraviolet photoelectric devices by doping rare earth elements such as Mn, Cr...