Molybdenum sulfide-graphene heterojunction photoconductive detector and preparation method thereof

A graphene and heterojunction technology, applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve problems affecting the photoelectric performance of two-dimensional material detectors, cracking, two-dimensional material wrinkles, etc., to improve the photoelectric characteristics and reduce impurities Questions, highly responsive effects

Inactive Publication Date: 2020-01-14
苏州枫桥光电科技有限公司
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Problems solved by technology

However, after transfer, two-dimensional materials (such as graphene) often have problems such as wrinkles and cracks, which affect the photoelectric performance of two-dimensional material detectors.

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  • Molybdenum sulfide-graphene heterojunction photoconductive detector and preparation method thereof
  • Molybdenum sulfide-graphene heterojunction photoconductive detector and preparation method thereof
  • Molybdenum sulfide-graphene heterojunction photoconductive detector and preparation method thereof

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[0027] In order for those skilled in the art to better understand the patent of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0028]The embodiments described below are only some embodiments of the present invention, not all embodiments; based on the embodiments of the present invention, other used embodiments obtained by those of ordinary skill in the art without making creative work , all belong to the protection scope of the present invention.

[0029] like figure 1 As shown, this embodiment discloses a molybdenum sulfide-graphene heterojunction photoconductive detector, including a heterojunction, and the heterojunction includes a SiO 2 / MoS on Si substrate layer 1 2 Layer 2, MoS 2 A graphene layer 3 is arranged on the layer 2, and two metal electrodes 4 made of Ag are arranged on the graphene layer 3. SiO 2 / Si substrate layer 1 consists of a set of MoS 2 SiO be...

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Abstract

The invention relates to a molybdenum sulfide-graphene heterojunction photoconductive detector and a preparation method of the heterojunction thereof.The molybdenum sulfide-graphene heterojunction photoconductive detector comprises the heterojunction. The heterojunction comprises a MoS2 layer arranged on a SiO2 / Si substrate layer.A graphene layer is arranged on the MoS2 layer, and a plurality of metal electrodes are arranged on the graphene layer. The two-dimensional material heterojunction negative photoconductive detector with low cost and high responsiveness and the preparation method thereof are provided. With application of the two-dimensional material transfer technology, the impurity problem in the interface layer of the graphene / TMDC heterojunction is reduced and the photoelectriccharacteristics of the graphene / TMDC photoconductive detector are improved.

Description

technical field [0001] The invention belongs to the field of photoconductive detectors, in particular to the structure and heterojunction of a molybdenum sulfide-graphene heterojunction photoconductive detector represented by graphene and transition metal sulfides with low cost and high responsivity method of preparation. Background technique [0002] Photoconductive detectors are devices that convert light pulses in optical fibers or waveguides into electrical signals. It plays a very important role in the field of integrated electronic technology. [0003] Heterojunction, the interface region formed by the contact of two different semiconductors. According to the different conductivity types of the two materials, heterojunctions can be divided into homogeneous heterojunctions (P-p junctions or N-n junctions) and heterogeneous heterojunctions (P-n or p-N) junctions. Multilayer heterojunctions are called heterostructures. Usually the conditions for forming a heterojunctio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/0336H01L31/18
CPCH01L31/0336H01L31/109H01L31/18Y02P70/50
Inventor 慕飒米张少先刘永杜明李侠
Owner 苏州枫桥光电科技有限公司
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