Method for producing composite transparent electrode by adopting graphene film and metallic network

A graphene film and transparent electrode technology, applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high cost, low efficiency, performance requirements of hardware facilities and high production cost, so as to simplify the production process, reduce production cost, Improvement of photoelectric characteristics and productivity

Active Publication Date: 2015-10-21
SHENZHEN YICK XIN TECH DEV CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But above-mentioned two patent technologies all adopt photolithography method and etching process to engrave and make the mesh crack mold of metal mesh electrode, not only cost height, process complexity, efficiency are low (for example need to process and prepare the mask of metal mesh membrane plate, and the higher the resolution of the metal grid, the more complex the required process); and when preparing a large-area metal grid, the required process conditions are more complicated, and the performance requirements and production costs of the hardware facilities are also higher. higher

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  • Method for producing composite transparent electrode by adopting graphene film and metallic network
  • Method for producing composite transparent electrode by adopting graphene film and metallic network
  • Method for producing composite transparent electrode by adopting graphene film and metallic network

Examples

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Embodiment 1

[0022] This embodiment takes the preparation method of the composite transparent electrode of graphene film and gold metal mesh as an example:

[0023] Step 1: Preparation of egg white gel: After separating the egg white from the egg yolk, put the egg white and 1 / 3 of the water of the egg white volume together in a miniature magnetic stirrer, and stir until uniform at 500r / min. Get egg white gel, set aside;

[0024]Step 2: Prepare a sheet body with a network crack film sacrificial layer: first clean and dry the polyethylene terephthalate (PET) substrate, and then evenly coat the egg white gel prepared in step 1 Brush it on the substrate, then send it into an oven and heat and bake it at 60°C until the egg white gel on the substrate forms a film with a network crack with a thickness of 2 μm, thereby making a network crack PET sheet of film sacrificial layer;

[0025] Step 3. Preparation of the metal mesh electrode: use the sacrificial layer of the adhesive film with reticular...

Embodiment 2

[0030] This embodiment takes the preparation method of graphene film and silver (Ag) metal mesh composite transparent electrode as example:

[0031] Step 1: Preparation of egg white gel: after separating the duck egg white from the egg yolk, put the egg white and 1 / 5 of the water of the egg white volume together in a miniature magnetic stirrer, and stir at 500r / min until uniform. Get egg white gel, set aside;

[0032] Step 2: Prepare a quartz glass sheet with a network-shaped crack adhesive film sacrificial layer: first, clean and dry the quartz glass substrate, and then evenly paint the egg white gel prepared in step 1 on the substrate, and then apply Send it into an oven and heat and bake it at 70°C until the egg white gel on the substrate becomes a film with a thickness of 1 μm with grid-like cracks, so as to obtain a quartz glass sheet with a sacrificial layer of the film with grid-like cracks;

[0033] Step 3. Preparation of the silver metal mesh electrode: the sacrifici...

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Abstract

The invention relates to a method for producing a composite transparent electrode by adopting a graphene film and a metallic network. The method includes the following steps that: egg white gel is prepared; a sheet body provided with a reticular crack gel mold sacrificial layer is prepared; a metallic network electrode is prepared; and the graphene film is prepared; and the composite transparent electrode can be obtained. According to the method of the invention, the egg white gel is adopted as the reticular crack mold and the sacrificial layer of the metallic network electrode, and the metallic network electrode in the composite electrode is prepared through utilizing magnetron sputtering or vacuum evaporation; the graphene film covers the metallic network electrode and a transparent insulating substrate; and the square resistance of the formed composite transparent electrode ranges from 25 to 30 Omega/sq, and the light transmittance of the composite transparent electrode ranges from 90 to 92 %. With the method adopted, production techniques can be simplified, the photoelectric characteristics and productivity of the composite transparent electrode can be improved, and the production cost of the composite transparent electrode can be effectively decreased. The method can be widely applied to photoelectric devices such as organic solar cells, organic light emitting diodes and touch screens. The method can be applied to preparation of large-area and high-quality composited transparent electrodes.

Description

technical field [0001] The invention belongs to the production method of photoelectric devices in the field of nanoelectronics, in particular to a production method of a transparent electrode with higher light transmittance which is formed by compounding graphene film and metal mesh. Background technique [0002] High-performance transparent electrodes are essential in many optoelectronic devices, such as touch screens, photovoltaic cells, organic light-emitting diodes, etc. Currently commercially, indium tin oxide (ITO) thin films have been widely used in various optoelectronic devices as transparent electrodes due to their high optical transmittance, low surface resistance and mature manufacturing process. However, indium is a rare metal, and its distribution in the earth's crust is relatively small and scattered. It mainly exists in cassiterite and sphalerite in trace amounts. With the popularity of products such as liquid crystal displays and touch screens, the price of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/44H01L51/46H01L51/48H01L51/52H01L51/54H01L51/56
CPCH10K30/82H10K50/805H10K71/00Y02E10/549Y02P70/50
Inventor 曾葆青杨锦标柳建龙
Owner SHENZHEN YICK XIN TECH DEV CO LTD
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