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ZnO-based transparent conductive film co-doped with Al-F and preparation method thereof

A transparent conductive film and co-doping technology, which is applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of difficult preparation of high-quality target materials, volatile, complex process, etc., to improve conductivity and visible light transmittance, good crystal orientation, simple coating process

Inactive Publication Date: 2009-11-11
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to ZnF 2 Low melting point (872°C), volatile, far lower than the sintering temperature of ZnO, and has strong toxicity, so the ZFO target components are not easy to prepare
Obviously, this method is complex and difficult to prepare high-quality targets

Method used

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  • ZnO-based transparent conductive film co-doped with Al-F and preparation method thereof
  • ZnO-based transparent conductive film co-doped with Al-F and preparation method thereof
  • ZnO-based transparent conductive film co-doped with Al-F and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Al and F co-doped n-type transparent conductive zinc oxide films were prepared, and the F content in the films was 2.46wt%.

[0020] 1. Prepare the ZAFO target material, select the ZAFO target material of Φ50mm×4mm, the target material uses 3.62wt% AlF 3 +0.75wt%Al 2 o 3 and ZnO powder, the target contains 1.55wt% Al and 2.46wt% F;

[0021] 2. Install the co-doped ZAFO target made in step 1 in the vacuum chamber of the radio frequency magnetron sputtering deposition equipment, and use a mechanical pump and a molecular pump to pump the vacuum of the vacuum chamber to 5×10 -4 Pa, the substrate is heated to a temperature of 300°C;

[0022] 3. Radio frequency magnetron sputtering coating, by adjusting the process parameters, using radio frequency magnetron sputtering to prepare ZAFO transparent conductive film on the substrate.

[0023] Deposition process parameters: the vacuum degree of the vacuum chamber is 5×10 -4 Pa; the sputtering atmosphere is high-purity Ar gas,...

Embodiment 2

[0027] An Al and F co-doped n-type transparent conductive zinc oxide film is prepared, and the F content in the film is 3.28wt%.

[0028] 1. Prepare the ZAFO target material, select the ZAFO target material of Φ50mm×4mm, the target material uses 4.83wt% AlF 3 and ZnO powder, the target contains 1.55wt% Al and 3.28wt% F;

[0029] 2. Install the co-doped ZAFO target made in step 1 in the vacuum chamber of the radio frequency magnetron sputtering deposition equipment, and use a mechanical pump and a molecular pump to pump the vacuum of the vacuum chamber to 5×10 -4 Pa, the substrate is heated to a temperature of 400°C;

[0030] 3. Radio frequency magnetron sputtering coating, by adjusting the process parameters, using radio frequency magnetron sputtering to prepare ZAFO transparent conductive film on the substrate.

[0031] Deposition process parameters: the vacuum degree of the vacuum chamber is 5×10 -4 Pa; the sputtering atmosphere is high-purity Ar gas; the flow rate is 30s...

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Abstract

The invention belongs to the field of functional materials and relates to a ZnO-based transparent conductive film co-doped with Al-F and a preparation method thereof. The method is characterized in that the method comprises the following steps of: 1) firstly preparing a ZAFO target material, uniformly mixing AlF3, Al2O3 and ZnO powders to prepare the ZAFO target materials with different F contents respectively, wherein the ZAFO target materials contain, by weight percent (wt%): 0.5-3.0 of Al, 0.82-3.28 of F and the balance of ZnO; and 2) installing the prepared ZAFO target materials in the vacuum chamber of radio-frequency magnetism-controlled sputtering deposition equipment; utilizing a mechanical pump and a molecular pump to pump the vacuum chamber so that the vacuum degree is less than 3 multiplied by 10Pa; simultaneously, heating the substrate to the temperature of 25 DEG C-500 DEG C; adjusting the deposition process parameters and preparing the ZAFO transparent conductive film on the substrate by the radio-frequency magnetism-controlled sputtering. The method simplifies the coating process and improves the conductivity of the film and the transmittance of the visible light.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to an Al and F co-doped ZnO-based transparent conductive film and a preparation method thereof, in particular to a method for preparing an Al and F co-doped n-type transparent conductive zinc oxide film. Background technique [0002] Transparent conductive oxide (TCO) film is a kind of film with high conductivity (high carrier, high mobility, low resistivity), high transmittance in the visible light region, and high transmittance in the ultraviolet region. A special semiconductor photoelectric material with high absorption rate and high reflectivity for infrared light. Due to these particularities, TCO thin films have been widely used as an important component in many optoelectronic devices, such as: transparent electrodes, light-emitting diodes, flat panel displays, solar cells, thin film transistors, transparent heating elements, transparent heat reflective materials, etc. [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 马瑞新王目孔康勃王永刚赵素丽章菊萍王媛媛
Owner UNIV OF SCI & TECH BEIJING
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