Dopant source supply pipeline and chemical vapor deposition system

Abstract

The invention discloses a dopant source supply pipeline and a chemical vapor deposition system. The dopant source supply pipeline includes a carrier gas source and a water bath system for containing an organic metal source, and also includes a carrier gas delivery pipeline connected to the carrier gas and a water bath system to feed the carrier gas into the organometallic source; the organometallic source gas delivery pipeline connects the water bath system to the reaction chamber and the waste treatment system, and the first branch connected to the reaction chamber has and only A first mass flow controller; a dilution pipeline, a main pipeline connecting the carrier gas source and the organometallic source gas delivery pipeline, for diluting the concentration of the dopant source gas in the main pipeline. The present invention only needs one mass flow controller to meet the large-span adjustment requirement of dopant source gas concentration, saves the pipeline cost caused by multiple mass flow controllers, and the pipeline structure in the output area is more concise; at the same time , the concentration adjustment is more convenient.

Description

technical field [0001] The invention relates to the field of epitaxial growth of silicon carbide, in particular to a dopant source supply pipeline and a chemical vapor deposition system. Background technique [0002] Silicon carbide is the third generation wide bandgap semiconductor material with wide bandgap, high breakdown voltage, high thermal conductivity, high electron saturation drift rate, high electron mobility, small dielectric constant, strong radiation resistance, and high chemical stability It is the key material for manufacturing high temperature, high frequency, high power, radiation resistance, non-volatile storage devices and optoelectronic integrated devices. [0003] Silicon carbide power electronic devices have the characteristics of high conversion efficiency, high temperature resistance, and radiation resistance, and have gradually replaced silicon devices in the fields of power conversion, solar photovoltaics, electric vehicles, and high-efficiency moto...

AI Technical Summary

Problems solved by technology

[0004] During the doping process of the silicon carbide epitaxial layer, the concentration of the dopant source (the number of atoms or molecules of the dopant source per unit volume) varies widely, and needs to be within 10 15 cm -3 ——10 20 cm -3 The existing dopant source supply pipeline meets the needs of large-span adjustment of the dopant source concentration delivered to the reaction chamber through multiple pipelines with mass flow controllers with different flow ranges, but Since the adjustment range of each mass flow control is limited, the number of mass flow controllers required for such a large-span concentration adjustment is also very large, and the price of mass flow controllers is relatively high, which causes pipeline The cost is greatly increased, and it also complicates the local structure of the output pipeline; in addition, the complicated output pipeline also increases the difficulty of controlling the output concentration

[0005] Moreover, in the existing aluminum-nitrogen doping process, two sets of independent pipelines are usually required to supply the aluminum source and the nitrogen source respectively, which further complicates the structure of the pipeline, resulting in a larger structure of the epitaxial growth equipment. While increasing the cost of equipment

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