ZnO-based transparent conductive film co-doped with Al-F and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- UNIV OF SCI & TECH BEIJING
- Publication Date
- 2010-11-03
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the field of functional materials, and relates to an Al and F co-doped ZnO-based transparent conductive film and a preparation method thereof, in particular to a method for preparing an Al and F co-doped n-type transparent conductive zinc oxide film. Background technique
[0002] Transparent conductive oxide (TCO) film is a kind of film with high conductivity (high carrier, high mobility, low resistivity), high transmittance in the visible light region, and high transmittance in the ultraviolet region. A special semiconductor photoelectric material with high absorption rate and high reflectivity for infrared light. Due to these particularities, TCO thin films have been widely used as an important component in many optoelectronic devices, such as: transparent electrodes, light-emitting diodes, flat panel displays, solar cells, thin film transistors, transparent heating elements, transparent heat reflective materials, etc. [00...