ZnO-based transparent conductive film co-doped with Al-F and preparation method thereof

A transparent conductive film, co-doping technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of difficult preparation of high-quality target materials, volatile, complex process, etc., to improve electrical conductivity and visible light transmittance, good crystal orientation, and simple coating process
CN101575697BInactive Publication Date: 2010-11-03UNIV OF SCI & TECH BEIJING

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF SCI & TECH BEIJING
Publication Date
2010-11-03
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention belongs to the field of functional materials and relates to a ZnO-based transparent conductive film co-doped with Al-F and a preparation method thereof. The method is characterized in that the method comprises the following steps of: 1) firstly preparing a ZAFO target material, uniformly mixing AlF3, Al2O3 and ZnO powders to prepare the ZAFO target materials with different F contentsrespectively, wherein the ZAFO target materials contain, by weight percent (wt%): 0.5-3.0 of Al, 0.82-3.28 of F and the balance of ZnO; and 2) installing the prepared ZAFO target materials in the vacuum chamber of radio-frequency magnetism-controlled sputtering deposition equipment; utilizing a mechanical pump and a molecular pump to pump the vacuum chamber so that the vacuum degree is less than3 multiplied by 10<-3>Pa; simultaneously, heating the substrate to the temperature of 25 DEG C-500 DEG C; adjusting the deposition process parameters and preparing the ZAFO transparent conductive filmon the substrate by the radio-frequency magnetism-controlled sputtering. The method simplifies the coating process and improves the conductivity of the film and the transmittance of the visible light.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the field of functional materials, and relates to an Al and F co-doped ZnO-based transparent conductive film and a preparation method thereof, in particular to a method for preparing an Al and F co-doped n-type transparent conductive zinc oxide film. Background technique

[0002] Transparent conductive oxide (TCO) film is a kind of film with high conductivity (high carrier, high mobility, low resistivity), high transmittance in the visible light region, and high transmittance in the ultraviolet region. A special semiconductor photoelectric material with high absorption rate and high reflectivity for infrared light. Due to these particularities, TCO thin films have been widely used as an important component in many optoelectronic devices, such as: transparent electrodes, light-emitting diodes, flat panel displays, solar cells, thin film transistors, transparent heating elements, transparent heat reflective materials, etc. [00...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More