37results about How to "Good crystal orientation" patented technology

The metal film of the present invention is a dense film of a single crystal that has very low surface roughness and very good crystal orientation because an arithmetic mean roughness of the surface is not larger than 2 nm and a (111) peak intensity of X-ray diffraction is not less than 20 times the sum of all other peaks. Also the metal oxide film of the present invention is a dense film that includes less oxygen defects and almost no voids therein because a content of a non-oxidized metal is not higher than 1 mole % of a metal component that constitutes the metal oxide and a packing density is 0.98 or higher.

The invention belongs to the field of functional materials and relates to a ZnO-based transparent conductive film co-doped with Al-F and a preparation method thereof. The method is characterized in that the method comprises the following steps of: 1) firstly preparing a ZAFO target material, uniformly mixing AlF3, Al2O3 and ZnO powders to prepare the ZAFO target materials with different F contents respectively, wherein the ZAFO target materials contain, by weight percent (wt%): 0.5-3.0 of Al, 0.82-3.28 of F and the balance of ZnO; and 2) installing the prepared ZAFO target materials in the vacuum chamber of radio-frequency magnetism-controlled sputtering deposition equipment; utilizing a mechanical pump and a molecular pump to pump the vacuum chamber so that the vacuum degree is less than 3 multiplied by 10Pa; simultaneously, heating the substrate to the temperature of 25 DEG C-500 DEG C; adjusting the deposition process parameters and preparing the ZAFO transparent conductive film on the substrate by the radio-frequency magnetism-controlled sputtering. The method simplifies the coating process and improves the conductivity of the film and the transmittance of the visible light.

The invention discloses a <, a 100>, an axial orientation Fe-Ga magnetostriction material and the preparation method thereof. The material composites are Fe1-x-yGaxAly; wherein, x is between 16 per cent and 21 per cent or 25 per cent and 28 per cent; y is between 0 per cent and 10 per cent; the rest part is iron. The preparation method is that the raw material is melted under the protection of the inert gas, and the improved percy williams bridgman method is adopted to prepare the Fe-Ga magnetostriction material through the directional solidification; The heat treatment conditions are that the material is preserved at 1100 DEG C. to 1200 DEG C. for 0.5 hours to 24 hours, cooled with the furnace till 900 DEG C. to 750 DEG C. for 0.5 hours to 24 hours temperature preservation and then quenched or cooled by air to room temperature; or the material is preserved at 1100 DEG C. to 1200 DEG C. temperature for 0.5 hours to 24 hours and is cooled with the furnace till 500 to 700 DEG C..

A perpendicular magnetic recording medium is disclosed that includes a substrate; a soft magnetic underlayer formed on the substrate; a seed layer of an amorphous material formed on the soft magnetic underlayer; an oxidation prevention layer formed on the seed layer; an underlayer formed on the oxidation prevention layer, the underlayer including multiple crystal grains formed of Ru or a Ru alloy having an hcp crystal structure, and a first air gap part configured to separate the crystal grains from each other; and a recording layer formed on the underlayer, the recording layer including multiple magnetic particles having a magnetocrystalline easy axis in a direction substantially perpendicular to the surface of the substrate, and one of a second air gap part and a non-magnetic non-solid-solution phase, the one being configured to separate the magnetic particles from each other. The oxidation prevention layer includes a noble metal element other than R.

The invention relates to a method for preparing a NiO transparent conductive film through two steps and belongs to the technical field of semiconductor optoelectronic material manufacture. The prior method adopts a complicated process for preparing a NiO ceramic target; and the NiO ceramic target is expensive and is easy to damage. In the process of preparing the NiO ceramic target by the prior method, the proportion of Ni atoms and O atoms is fixed so as to limit the adjusting range of the proportion of the Ni atoms and the O atoms in the prepared NiO transparent conductive film, thereby failing to meet difficult application requirements. Due to low-temperature growth, the film has more disadvantages, thereby causing the reduction of the mobility ratio of a current carrier in the film and greatly reducing the conductivity and the optical transmissivity of the NiO transparent conductive film. In step one of the method, a Ni film is prepared through sputtering the Ni target; and in step two, the obtained Ni film is positioned in an oxidation atmosphere, wherein the temperature is between 500 and 1,200 DEG C, the flow rate of oxygen gas is between 5 and 15 l/min, and time for thermal oxidization is between 30 and 180 minutes; and the Ni film is oxidized to form the NiO transparent conductive film.

The invention discloses a composite lithium ion battery cathode material and a preparation method and an application thereof. The composite lithium ion battery positive electrode material comprises alithium-rich manganese-based positive electrode material with a layered structure and a 5V high-voltage positive electrode material with a spinel structure, a chemical formula of the 5V high-voltage positive electrode material with the spinel structure is LiMaNbMn<2-a-b>O<4-c>S<c>, wherein a is greater than 0.01 and less than 0.5, b is greater than 0.1 and less than 1, c is greater than 0.001 andless than 0.5, M comprises any one or a combination of at least two of Ni, Cr, V, Fe, Cu and Co, N is doped cations, and S is doped anions. The obtained coating material has good crystal orientation,irreversible capacity loss of a lithium-rich phase can be effectively improved, moreover, oxygen atoms in the positive electrode material of the lithium battery are doped with polyanion groups, so loss of charging and discharging oxygen octahedrons under a high-voltage platform is reduced, a problem of voltage attenuation is relieved, and stability and the rate capability of the material are improved.

Superconductor reactors, methods and systems are disclosed.

The invention discloses a lignin hydro-cracking catalyst which comprises an H beta molecular sieve and a hydrogenating active metal component, wherein the hydrogenating active metal component belongs to a group VIB and/or a group VIII; the pore volume of the catalyst is 0.5-0.8 mL/g, the total specific surface area is 600-800 m<2>/g, the mesoporous specific surface area is 400-450 m<2>/g, and the micropore specific surface area is 300-370 m<2>/g; the H beta molecular sieve has the following properties that the molar ratio of SiO2 to Al2O3 is 60:100, the specific surface area is 700-900 m<2>/g, the pore volume is 0.6-0.9 mL/g, and the relative crystallinity is 100-148 percent. The catalyst is prepared by adopting an impregnation method. The catalyst adopts a beta-type molecular sieve with high silica-alumina ratio, high crystallinity, large specific surface area and a special channel structure as an acidic component and has higher reaction activity and higher liquid yield for lignin hydro-cracking.

The invention discloses a diesel oil hydrogenation modification catalyst and a preparation method thereof. The catalyst comprises a hydrogenating active metal component and a carrier; the carrier comprises a beta molecular sieve, macroporous alumina and a binder; with the weight of the carrier as a benchmark, the content of the beta molecular sieve is 5-30 wt%, the content of the macroporous alumina is 20-65 wt%, and the content of the binder is 15-50 wt%; the beta molecular sieve has the following properties: the SiO2/Al2O3 molar ratio is 60-100, the specific surface area is 505-850 m<2>/g, the pore volume is 0.35-0.60 mL/g, and the relative crystallinity degree is 100%-148%; the relative crystallinity degree of the beta molecular sieve subjected to water steam hydrothermal treatment is more than or equal to 95%. The catalyst has the characteristics of high diesel oil product yield, good product quality, especially low condensation point of the diesel oil and the like.

The invention relates to a wide-band-gap perovskite solar cell and a preparation method and application thereof, which belong to the field of photoelectric materials and devices. The preparation method comprises the following steps of dissolving lead iodide, lead bromide, methyl ammonium iodide and methyl ammonium bromide in an ionic liquid methylammonium acetate according to a molar ratio of 3: 1: 3: 1 to prepare a wide-band gap perovskite precursor solution, and spin-coating the precursor solution on ITO transparent conductive glass deposited with an electron transport material and an interface material in air by adopting a one-step heating spin-coating method, and after annealing treatment, forming the wide-band-gap perovskite thin film which is compact and smooth in surface, high in crystallinity, low in defect state density and good in crystal orientation. The prepared wide-band-gap perovskite solar cell has excellent photoelectric conversion efficiency and excellent device stability.

The invention belongs to the field of chemical liquid phase deposition, particularly relates to a preparation method for a polycrystalline mercury iodide film seed crystal layer and solves the problems that the pollution of solvent and reaction by-products are difficult to remove during solution precipitation in the prior art. According to the preparation method for the polycrystalline mercury iodide film seed crystal layer, provided by the invention, yellow mercury oxide (HgO) and hydroiodic acid (HI) are used as basic materials, and the reaction rate between the HgO and (HI) is controlled by adjusting the concentration of the HI added into a system, so that fine mercury iodide particles are generated. The generated fine mercury iodide particles deposit on a substrate (electrode) material to form a layer of homogeneous film, so that directional crystal nucleuses are provided for gas phase epitaxial growth, thereby increasing one-way growth probability of the film.

The invention provides a polyimide film for an artificial graphite film, a preparation method of the polyimide film and the artificial graphite film. The polyimide film is formed by polymerizing dianhydride and diamine; the diamine is selected from p-phenylenediamine or 4,4'-diaminodiphenyl ether; the dianhydride comprises dianhydride A and dianhydride B, and the dianhydride A is selected from oneof 3,3',4,4'-biphenyl tetracarboxylic dianhydride or pyromellitic dianhydride; and the dianhydride B is selected from one or two of 1,4,5,8-naphthalene tetracarboxylic dianhydride, binaphthalene dianhydride or perylene anhydride. By regulating and controlling the formula of the polyimide film, the imidization degree is improved, the obtained polyimide film is good in crystal orientation and highin birefringence, and the obtained artificial graphite film is excellent in performance.

The invention provides a polyimide film and a graphite film, the polyimide film is obtained by polymerization of pyromellitic dianhydride, 4,4'-diaminodiphenyl ether and a second diamine monomer accounting for 1-50 mol% of a diamine monomer, the second diamine monomer is a diamine monomer containing a nitrogen heterocyclic ring, the imidization degree and the crystal orientation of polyimide are improved through formula regulation and control, and the obtained polyimide graphite film has excellent thermal conductivity and mechanical properties.

The present invention provides a textured substrate for forming an epitaxial film, including a textured metal layer on at least one surface of the layer, the textured metal layer including a copper layer having a cube texture, the textured metal layer having, on a surface of the layer, palladium added in an amount of 10 to 300 ng/mm² per unit area, the hydrogen content of the surface of the textured metal layer being 700 to 2000 ppm. This textured substrate is produced through a step of adding 10 to 300 ng/mm² per unit area of palladium by strike plating to a surface of the copper layer having a cube texture.

The invention relates to a high-performance ultrathin polypropylene capacitor film and a preparation method thereof. The preparation method comprises the following steps: with high-purity electrician-grade polypropylene as raw material, sequentially carrying out melt extrusion and casting, then carrying out bidirectional synchronous drawing in a drawing ratio of 40-50 times, then cooling for sizing, carrying out trimming and corona treatment, thus obtaining the polypropylene capacitor film finished product with the thickness of 2-4 micrometers. The polypropylene capacitor film prepared by adopting the preparation method has the thermal shrinkage in a machine direction (MD) of 1.5-2.5% and the thermal shrinkage in a transverse direction (TD) of 0.15-0.5% and is especially applicable to a dielectric insulating film in a high-capacity, small-volume, high-power, direct-current and high-voltage capacitor.

The invention relates to a preparation method of a film bulk acoustic resonator lower electrode, which aims at solving the problems of an existing Mo (molybdenum) film obtained by an ordinary process that the surface is rough, the structural and geometric uniformity is poor, the electric and acoustic performance can hardly meet the piezoelectric pile electrode requirement, the characteristic difference between the Mo film and an AlN film is large and the combination strength is low. The preparation method comprises the following steps of: A, washing a monocrystal silicon substrate material; B, carrying out the ion cleaning on the surface of a monocrystal silicon substrate; C, depositing the Mo film on the surface of the monocrystal silicon substrate; D, carrying out the nitrogen treatment on the surface of the Mo film. The Mo film electrode prepared by the method is smooth in surface, low in coarseness, good in structural and geometric uniformity and excellent in electric and acoustic performance. The preparation method can be applicable to the technical field of an electronic material.