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Preparation method of film bulk acoustic resonator lower electrode

A thin-film bulk acoustic wave and resonator technology, which is applied in electrical components, ion implantation plating, coating, etc., can solve the problem that the electrical and acoustic properties are difficult to meet the requirements of piezoelectric stack electrodes, the characteristics of AlN thin films vary greatly, and the structure and geometry are uniform Poor performance and other problems, to achieve the effect of excellent electrical and acoustic performance, good structural and geometric uniformity, and good uniformity

Inactive Publication Date: 2015-02-11
HARBIN INST OF TECH
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the Mo thin film obtained by the existing common process has rough surface, poor structure and geometric uniformity, and the electrical and acoustic properties are difficult to meet the requirements of the piezoelectric stack electrode, and the characteristics of the Mo thin film are different from the AlN thin film, and the bonding strength is low. problem, and propose a preparation method for the lower electrode of thin film bulk acoustic resonator

Method used

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  • Preparation method of film bulk acoustic resonator lower electrode

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specific Embodiment approach 1

[0018] Specific embodiment one: the preparation method of the lower electrode of a kind of film bulk acoustic resonator in this embodiment is carried out according to the following steps:

[0019] Step 1. Put the monocrystalline silicon wafer substrate in acetone, alcohol and deionized water in sequence, wash it for 20-30 minutes under the condition of ultrasonic power of 250W-550W, and then dry it;

[0020] Step 2: Install the Mo target in the cathode arc source, place the monocrystalline silicon wafer substrate obtained in step 1 on the sample stage in the vacuum chamber of the filter cathodic arc deposition equipment, and evacuate to 1.0×10 -6 Torr~9.9×10 -6 Ar gas is introduced after Torr, and the flow rate of Ar gas is controlled to be 40sccm~60sccm. When the pressure in the vacuum chamber reaches 8.0×10 -5 Torr~1.0×10 -4 During Torr, turn the sample stage to the ion cleaning position, perform ion cleaning on the surface of the single crystal silicon substrate for 10min...

specific Embodiment approach 2

[0028] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that in step 1, the ultrasonic power is 300W-500W and then cleaned for 22min-28min and then dried. Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0029] Specific embodiment three: the difference between this embodiment and specific embodiment one is that in step one, the ultrasonic power is 400W and then cleaned for 25 minutes and then dried. Other steps and parameters are the same as those in Embodiment 1.

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Abstract

The invention relates to a preparation method of a film bulk acoustic resonator lower electrode, which aims at solving the problems of an existing Mo (molybdenum) film obtained by an ordinary process that the surface is rough, the structural and geometric uniformity is poor, the electric and acoustic performance can hardly meet the piezoelectric pile electrode requirement, the characteristic difference between the Mo film and an AlN film is large and the combination strength is low. The preparation method comprises the following steps of: A, washing a monocrystal silicon substrate material; B, carrying out the ion cleaning on the surface of a monocrystal silicon substrate; C, depositing the Mo film on the surface of the monocrystal silicon substrate; D, carrying out the nitrogen treatment on the surface of the Mo film. The Mo film electrode prepared by the method is smooth in surface, low in coarseness, good in structural and geometric uniformity and excellent in electric and acoustic performance. The preparation method can be applicable to the technical field of an electronic material.

Description

technical field [0001] The invention relates to a preparation method of a lower electrode of a resonator, in particular to a preparation method of a lower electrode of a film bulk acoustic wave resonator. Background technique [0002] Thin-film bulk acoustic resonator refers to a device that uses thin-film metal electrodes and piezoelectric materials to generate bulk acoustic waves, and realizes electrical frequency selection through acoustic resonance. The material system for thin film bulk acoustic resonator is composed of piezoelectric thin film material, high or low acoustic impedance layer material and electrode thin film. Electrode film material is an important part of thin film bulk acoustic resonator, and its performance will also have an important impact on the device. Mo is considered to be a more suitable electrode material for thin film bulk acoustic resonators due to its suitable density, low resistivity, and large acoustic impedance. AlN is considered to be a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/32C23C14/16H03H9/15
Inventor 鄂羽佳杨振怀朱嘉琦韩杰才
Owner HARBIN INST OF TECH
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