Preparation method for polycrystalline mercury iodide film seed crystal layer

A technology of mercury iodide and seed crystal layer is applied in the field of preparation of polycrystalline mercury iodide thin film seed crystal layer, which can solve the problems of solvent contamination reaction by-products, difficult to remove, etc., and achieves easy popularization, easy operation, and solved removal problems. Effect

Inactive Publication Date: 2014-05-28
XIAN TECHNOLOGICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention provides a method for preparing a polycrystalline mercuric iodide thin film seed layer for the problems of solvent pollution and reaction by-products that are difficult to remove when the solution is precipitated in the above prior art

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  • Preparation method for polycrystalline mercury iodide film seed crystal layer
  • Preparation method for polycrystalline mercury iodide film seed crystal layer

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Experimental program
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Embodiment 1

[0025] A preparation method of a polycrystalline mercuric iodide film seed layer, comprising the following steps in sequence:

[0026] a. Preparation of the substrate: ITO conductive glass is selected as the substrate material for depositing the mercury iodide seed layer. First cut the ITO glass (thickness 1mm) into small square pieces of 10×10mm in size, and then clean the surface of the ITO glass substrate: put the ITO glass in acetone and 18MΩ high-purity deionized water for 15 minutes, and then use Rinse with deionized water three times. Then dry it under vacuum condition to get a clean and smooth ITO substrate.

[0027] b. Preparation of reaction solution: first add HI acid to 18MΩ high-purity deionized water to dilute until the concentration of HI in water is 20%, and place the diluted HI acid in a constant temperature preparation device with electromagnetic stirring, set The magnetic rotor rotates at 200 rpm. Then yellow mercury oxide according to [Hg 2+ ]: [I - ] ...

Embodiment 2

[0031] A preparation method of a polycrystalline mercuric iodide film seed layer, comprising the following steps in sequence:

[0032] a. Preparation of the substrate: ITO conductive glass is selected as the substrate material for depositing the mercury iodide seed layer. First cut the ITO glass (thickness 1mm) into small square pieces of 10×10mm in size, and then clean the surface of the ITO glass substrate: put the ITO glass in acetone and 18MΩ high-purity deionized water for 15 minutes, and then use Rinse twice with deionized water. Then dry it under vacuum condition to get a clean and smooth ITO substrate.

[0033] B, the preparation of reaction solution: at first HI acid is added appropriate amount of high-purity deionized water and diluted to the concentration of HI in water is 25%, and the diluted HI acid is placed in the constant temperature preparation device with electromagnetic stirring, set The rotation speed of the fixed magnetic rotor is 500rpm. Then yellow me...

Embodiment 3

[0037] A preparation method of a polycrystalline mercuric iodide film seed layer, comprising the following steps in sequence:

[0038] a. Preparation of the substrate: TFT conductive glass is selected as the substrate material for depositing the mercury iodide seed layer. First, cut the TFT glass (thickness 1mm) into small square pieces of 10×10mm, and then clean the surface of the ITO glass substrate: put the ITO glass into acetone and 18MΩ high-purity deionized water for 15 minutes, and then use Rinse with deionized water three times. Then dry it under vacuum condition to get a clean and smooth ITO substrate.

[0039] B, the preparation of reaction solution: at first HI acid is added appropriate amount of high-purity deionized water and diluted to the concentration of HI in water is 30%, and the diluted HI acid is placed in the constant temperature preparation device with electromagnetic stirring, set The rotational speed of the fixed magnet rotor is 200rpm. Then yellow m...

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Abstract

The invention belongs to the field of chemical liquid phase deposition, particularly relates to a preparation method for a polycrystalline mercury iodide film seed crystal layer and solves the problems that the pollution of solvent and reaction by-products are difficult to remove during solution precipitation in the prior art. According to the preparation method for the polycrystalline mercury iodide film seed crystal layer, provided by the invention, yellow mercury oxide (HgO) and hydroiodic acid (HI) are used as basic materials, and the reaction rate between the HgO and (HI) is controlled by adjusting the concentration of the HI added into a system, so that fine mercury iodide particles are generated. The generated fine mercury iodide particles deposit on a substrate (electrode) material to form a layer of homogeneous film, so that directional crystal nucleuses are provided for gas phase epitaxial growth, thereby increasing one-way growth probability of the film.

Description

technical field [0001] The invention belongs to the field of chemical liquid phase deposition, in particular to a method for preparing a polycrystalline mercury iodide film seed layer. Background technique [0002] Mercury iodide (HgI 2 ) is a direct transition wide bandgap — It is an excellent room temperature nuclear radiation semiconductor material. High atomic number (Hg=80, I=53), large band gap (300K, 2.13eV), high bulk dark resistivity ( ρ >10 13 Ω.cm), high ionization efficiency (52%), so it has a large photoelectric linear absorption coefficient, high detection efficiency, good energy resolution, and has high detection efficiency and good energy resolution for low-energy X and gamma rays . It can be widely used in military, nuclear industry, environmental protection, medical and health, non-destructive testing and other fields without being limited by location, time and other conditions, so HgI 2 Crystal is currently an excellent material for preparing ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/04C30B29/12
Inventor 许岗谷智南瑞华李高宏陈卫星王素敏王奇观冯启蒙郭炎飞
Owner XIAN TECHNOLOGICAL UNIV
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