62results about How to "High magnetic field sensitivity" patented technology

Provided are an inspection device and an inspection method capable of achieving improved magnetic field sensitivity by using a magnetic thin film of a small film thickness. A light-emitting unit 1 emits light of a first wavelength for acquiring magnetic field inspection information and a second wavelength for acquiring inspection object surface information. A selection unit 6 selects information from an inspection object 4 and information from a magnetophotonic crystal film 3 acquired by light irradiation performed by an irradiation unit 2. An image generation unit 9 generates image data based on the magnetic field inspection information acquired with the first wavelength and the inspection object surface information acquired with the second wavelength selected by the selection unit. Each of the generated image data is displayed on a display unit 10.

A giant magnetoresistive flux focusing eddy current device effectively detects deep flaws in thick multilayer conductive materials. The probe uses an excitation coil to induce eddy currents in conducting material perpendicularly oriented to the coil's longitudinal axis. A giant magnetoresistive (GMR) sensor, surrounded by the excitation coil, is used to detect generated fields. Between the excitation coil and GMR sensor is a highly permeable flux focusing lens which magnetically separates the GMR sensor and excitation coil and produces high flux density at the outer edge of the GMR sensor. The use of feedback inside the flux focusing lens enables complete cancellation of the leakage fields at the GMR sensor location and biasing of the GMR sensor to a location of high magnetic field sensitivity. In an alternate embodiment, a permanent magnet is positioned adjacent to the GMR sensor to accomplish the biasing. Experimental results have demonstrated identification of flaws up to 1 cm deep in aluminum alloy structures. To detect deep flaws about circular fasteners or inhomogeneities in thick multilayer conductive materials, the device is mounted in a hand-held rotating probe assembly that is connected to a computer for system control, data acquisition, processing and storage.

A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.

The invention discloses a design and manufacture technology of a sensing unit of a sensor and one or more types of sensor chips consisting of the sensing unit, in particular to one or more types of sensor chips capable of detecting the magnetic field parallel and vertical to the surface of the chip and the acceleration of an object. The invention has the advantages that the process is simple and easy, the sensitivity is high, and batched production is easily realized; the sensing unit of the sensor comprises a wafer substrate, a seed layer, a soft magnetic material layer, a conducting layer and a N-layer structure; the conducting layer is wrapped by the soft magnetic material layer; the N-layer structure is formed by combination of the soft magnetic material layer and the conducting layer; and simultaneously a bent structure is formed by N long lines in the plane (the sensing unit is a single-strip-shaped structure when N is equal to 1). The sensing unit of the sensor realizes single-axis, double-axis and three-axis magnetic field detection by different packaging forms. Simultaneously, due to the combination of the sensing unit of the sensor and a cantilever structure with magnetic mass blocks, the single-axis, double-axis and three-axis acceleration detection can be realized.

The invention discloses a <, a 100>, an axial orientation Fe-Ga magnetostriction material and the preparation method thereof. The material composites are Fe1-x-yGaxAly; wherein, x is between 16 per cent and 21 per cent or 25 per cent and 28 per cent; y is between 0 per cent and 10 per cent; the rest part is iron. The preparation method is that the raw material is melted under the protection of the inert gas, and the improved percy williams bridgman method is adopted to prepare the Fe-Ga magnetostriction material through the directional solidification; The heat treatment conditions are that the material is preserved at 1100 DEG C. to 1200 DEG C. for 0.5 hours to 24 hours, cooled with the furnace till 900 DEG C. to 750 DEG C. for 0.5 hours to 24 hours temperature preservation and then quenched or cooled by air to room temperature; or the material is preserved at 1100 DEG C. to 1200 DEG C. temperature for 0.5 hours to 24 hours and is cooled with the furnace till 500 to 700 DEG C..

This invention relates to a manufacturing method for a huge magnet impedance effect magnet-sensitive device based on micro-electromechanical system (MEMS), which applies MEMS technology to process a double-face oxidized silicon chip to get an aligned symbol carved in double faces so as to increase the aligned accuracy when exposing, applies a quasi-LIGA photo etching technology and micro plating to prepare a zigzag sandwich structure FeNi/Cu/FeNi soft magnet multiplayer membrane material, applies physical etching to remove the substrate to avoid the erosion brought with wet etching and offsets the huge magnet impedance effective curves by selecting suitable magnets to make the magnet-sensitive device to work in the linear zone.

The invention provides a magnetic field sensor utilizing the giant magnetoresistive effect of a ferromagnetic nano-ring, and belongs to the technical field of magnetic nano-sensors. The sensor is composed of a ferromagnetic nano-ring prepared on a substrate of nanometer size and a group of lead wires; the group of lead wires connected to the two ends of the ring also serve as a constant current source connecting wire and a voltage measurement connecting wire; the outside diameter D of the ferromagnetic nano-ring is 7 nm-10 um; the inside diameter d is smaller than the outside diameter D; the width of the ring is 5 nm-1 um; and the thickness of the nano-ring is 1 nm-500 nm. The sensor utilizes the ferromagnetic nano-ring under the action of the outside magnetic field, and the resistance the ferromagnetic nano-ring changes greatly, so as to detect the change of the outside magnetic field; the manufacture is very simple; the output signal is large; and the response is fast. The sensor is especially applicable to the detection of the threshold value of the magnetic field change; besides, the magnetic field sensitivity of the magnetic field transformation point can reach 2-10 percent/Oe or is higher than 2-10 percent/Oe, and the sensor also can serve as a magnetic cell.

The invention relates to a magnetic material, in particular to a magnetic sensitive material with high sensitivity, wherein the magnetic sensitive material contains Fe and the alloy consisting of one or more compositions of Co, B, Si, Nb, V, Mn, Cu, Ni and Cr; the magnetic material is characterized in that the external surface layer is an amorphous shell layer and the inside of the magnetic sensitive material is a composite structure with a nano-crystalline internal core material. The nano-crystalline structure has the advantages of easy magnetization and high permeability in the longitudinal direction and the amorphous structure has the advantages of easy magnetization and high permeability in the ring direction vertical to the longitudinal direction; and the combination of the nano-crystalline structure and the amorphous structure can greatly improve the change rate of impedance and the magnetic field sensitivity, greatly improves the magnetic field sensitivity at a weak magnetic field, has the advantages of low-sensitivity response critical magnetic field (wherein the sensitivity response magnetic field can be less than 5A/m), being sensitive to weak magnetic field without needing a bias field, reducing the power dissipation of a magneto-dependent sensor, low cost, etc., and is a magnetic sensitive material with high cost-performance ratio and high sensitivity.

The invention discloses a complementary metal oxide semiconductor (CMOS) sensor with an octagonal Hall disk structure and a manufacturing method for the CMOS sensor. The CMOS sensor comprises a p type substrate, an octagonal n well, a p+ doped region, n+ doped regions, a depletion layer, a p+ lightly doped region, an oxide layer and an aluminum layer, wherein the octagonal n well is positioned on the p type substrate; the p+ doped region is positioned outside the edge of the octagonal n well; the n+ doped regions are positioned on the inner side of the edge of the octagonal n well; the depletion layer is positioned at the boundary of the octagonal n well and the p type substrate; the p+ lightly doped region is positioned above the octagonal n well; the oxide layer is positioned on the surface of the octagonal n well; and the aluminum layer is positioned above the n+ doped regions. Due to the adoption of the octagonal Hall disk structure, eight terminals can be provided to generate eight current directions and further greatly reduce offset.

Measurement of a precessional rate of a gas, such as an alkali gas, in a magnetic field is made by promoting a non-uniform precession of the gas in which substantially no net magnetic field affects the gas during a majority of the precession cycle. This allows sensitive gases that would be subject to spin-exchange collision de-phasing to be effectively used for extremely sensitive measurements in the presence of an environmental magnetic field such as the Earth's magnetic field.

The invention discloses a magnetic field sensor and a Hall device. The magnetic field sensor comprises a bridge circuit. The bridge circuit comprises four bridge arms. Each bridge arm comprises a Hall resistance element. At least one bridge arm also comprises an adjustable resistance element connected in series with the Hall resistance element on the corresponding bridge arm; each Hall resistance element is provided with a pair of resistance output ends and a pair of current input ends; the resistance output ends are connected to the interior of the corresponding bridge arm on which the Hall resistance element is located; and the current input ends are used for receiving working current so as to generate Hall resistance at the resistance output ends. According to the magnetic field sensor and the Hall device disclosed by the invention, the bridge circuit consists of the four Hall resistance elements and the adjustable resistance elements, and thus, bridge balance when no magnetic field exists can be realized. According to the magnetic field sensor and the Hall device disclosed by the invention, bridge differential output can be realized when a magnetic field exists, and therefore, the zero-field offset problem of the Hall device is greatly lowered structurally. The magnetic field sensor and the Hall device are simple in process and are in favor of large-scale industrialized popularization.

The probe of the HTc rf SQUID comprises the hollow coplane resonator of superconducting film, the magnetic flux focuser of superconducting film, SQUID device and the microwave-coupling loop. The SQUID device is positioned above the magnetic flux focuser, and the hollow coplane resonator is positioned between the SQUID device and the microwave-coupling loop but above the SQUID device. Since the air core coplane resonator is separated from the magnetic flux focuser, thus, bigger focuser can be made so as to obtain larger effective area and raise sensitivity of magnetic field. Designing size ofthe hollow coplane resonator makes the probe operate at frequencies between 1.23-1.42 GHz, center frequency near 1.3 GHz so as to avoid interference of radio communication frequency range.

The invention discloses a nanometer magnitude material capable of generating a remarkable magneto-impedance effect below 100 MHz, and a preparation method thereof. According to the invention, a structure of the material with the giant magneto-impedance effect is that: an insulation layer template with uniform holes is formed on a substrate material, nanowires made of cobalt or iron or cobalt-ironalloy or other magnetic materials are arranged in the holes of the insulation layer template, a layer of iron-nickel alloy film is arranged on the upper surfaces of the insulation layer template and the nanowires, the film and the nanowires form a brush-like structure, the substrate material is a metal material, and the insulation layer template is made of an electrically insulated metal oxide ora high polymer. According to the invention, the substrate metal material used in the material with the giant magneto-impedance effect can be aluminum or titanium, and the insulation template on the substrate metal material can be oxide of aluminum or titanium.

The invention relates to a preparation method for a nano-crystalline material, in particular to a preparation method for an amorphous exoexine nano-crystalline material. The key points are as follows: treatment is carried out on a amorphous material by using joule heat in flowing gas; due to the passing of continuous current, the temperature of the amorphous material is increased continuously, and after the temperature reaches the nano-crystallization temperature, nano-crystallization is carried out on the material; under the effect of the flowing gas of the surface layer, large amount of heat is taken away, the temperature cannot reach the nano-crystallization temperature, so the material is not nano-crystallized and is still in the amorphous state; therefore, the amorphous exoexine nano-crystalline material is formed. The invention has compact preparation structure, can combine the advantages of two types of materials into one body and also can prepare the material with excellent performance and high cost performance.

The invention relates to the technical field of navigation equipment circuits, in particular to an inertia/terrestrial magnetism integrated navigation system low noise measuring circuit based on a three-axis TMR sensor. The inertia/terrestrial magnetism integrated navigation system low noise measuring circuit based on the three-axis TMR sensor comprises a power supply module, a signal processing module and an information acquisition module, and the power supply module comprises a + 2.5 V output power supply circuit, a + 3.3 V output voltage power supply circuit and a + 5V buffer voltage powersupply circuit; the information acquisition module comprises a three-axis tunneling magnetoresistive magnetic sensor circuit and an inertial sensor measurement circuit; the signal processing module comprises an X-axis signal processing circuit, a Y-axis signal processing circuit, a Z-axis signal processing circuit and an AD conversion circuit; according to the invention, an underwater vehicle witha certain volume can continuously work underwater for a longer time, and the problem that the noise of a signal is not thoroughly filtered at a high frequency due to lower frequency of a measurementmagnetic field is solved.

The invention discloses a high-sensitivity vertical magnetic field sensor with a symmetrical structure. The magnetic field sensor comprises a first vertical magnetic field sensor and a second verticalmagnetic field sensor, which are vertically and symmetrically arranged, wherein the first vertical magnetic field sensor and the second vertical magnetic field sensor share a third N + region. The magnetic field sensor comprises a silicon substrate, an insulator layer, a first P-region, a second P- region, a third P- region, a fourth P- region, a first N + region, a second N + region, a third N +region, a fourth N + region, a fifth N + region, a gate dielectric layer and a gate. The magnetic field sensor with the symmetrical structure has a simple production process, a completely symmetricalstructure and low initial device offset, furthermore, the device offset can be eliminated by using the rotating current technology, and the residual offset is low. The vertical magnetic field sensorhas high magnetic field sensitivity, and can form a two-dimensional magnetic field sensor to realize the detection of a two-dimensional magnetic field parallel to a device plane.

The invention discloses a giant magneto-impedance magnetic sensor based on a magneto-electro-mechanical double-resonance mode, which is composed of a multi-layer variable cross-section shuttle-shapediron-based nanocrystalline soft magnetic film, a first laminated planar coil, a second laminated planar coil, a piezoelectric/giant magnetostrictive laminate array and a MEMS adjustable capacitor driven by a piezoelectric beam. The optimal working frequency can be effectively reduced to below MHz, the magnetic conductivity limitation of the soft magnetic material is broken through, and the sensitivity of the magnetic domain motion changing along with the magnetic field is further increased through the external magnetic field and the magnetic force changing along with the magnetic field. By adjusting the input of the direct current voltage to the piezoelectric driving layer, double resonance of a magnetic machine and capacitance and inductance of the GMI magnetic sensor is caused at the same time, and the detection sensitivity is further improved.