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63results about How to "High magnetic field sensitivity" patented technology
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Inspection Device and Inspection Method
ActiveUS20140225606A1High magnetic field sensitivityHigh sensitivityPolarisation-affecting propertiesMagnetic field measurement using magneto-optic devicesLight irradiationLength wave
Provided are an inspection device and an inspection method capable of achieving improved magnetic field sensitivity by using a magnetic thin film of a small film thickness. A light-emitting unit 1 emits light of a first wavelength for acquiring magnetic field inspection information and a second wavelength for acquiring inspection object surface information. A selection unit 6 selects information from an inspection object 4 and information from a magnetophotonic crystal film 3 acquired by light irradiation performed by an irradiation unit 2. An image generation unit 9 generates image data based on the magnetic field inspection information acquired with the first wavelength and the inspection object surface information acquired with the second wavelength selected by the selection unit. Each of the generated image data is displayed on a display unit 10.
Owner:HITACHI LTD
Magnetoresistive flux focusing eddy current flaw detection
InactiveUS6888346B2Effectively deep flawIncrease flux densityMagnetic property measurementsMaterial magnetic variablesHigh fluxHand held
A giant magnetoresistive flux focusing eddy current device effectively detects deep flaws in thick multilayer conductive materials. The probe uses an excitation coil to induce eddy currents in conducting material perpendicularly oriented to the coil's longitudinal axis. A giant magnetoresistive (GMR) sensor, surrounded by the excitation coil, is used to detect generated fields. Between the excitation coil and GMR sensor is a highly permeable flux focusing lens which magnetically separates the GMR sensor and excitation coil and produces high flux density at the outer edge of the GMR sensor. The use of feedback inside the flux focusing lens enables complete cancellation of the leakage fields at the GMR sensor location and biasing of the GMR sensor to a location of high magnetic field sensitivity. In an alternate embodiment, a permanent magnet is positioned adjacent to the GMR sensor to accomplish the biasing. Experimental results have demonstrated identification of flaws up to 1 cm deep in aluminum alloy structures. To detect deep flaws about circular fasteners or inhomogeneities in thick multilayer conductive materials, the device is mounted in a hand-held rotating probe assembly that is connected to a computer for system control, data acquisition, processing and storage.
Owner:NASA
Magnetic field detection device
ActiveUS20100156405A1High-accurate positional relationshipAvoid yield lossNanomagnetismMagnetic-field-controlled resistorsCurve shapeAcoustics
A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.
Owner:MITSUBISHI ELECTRIC CORP
Design and manufacture technology of sensor chip for detecting magnetic field and acceleration
InactiveCN103076577ASimple processHigh sensitivityAcceleration measurement using interia forcesMagnetic measurementsManufacturing technologyEngineering
The invention discloses a design and manufacture technology of a sensing unit of a sensor and one or more types of sensor chips consisting of the sensing unit, in particular to one or more types of sensor chips capable of detecting the magnetic field parallel and vertical to the surface of the chip and the acceleration of an object. The invention has the advantages that the process is simple and easy, the sensitivity is high, and batched production is easily realized; the sensing unit of the sensor comprises a wafer substrate, a seed layer, a soft magnetic material layer, a conducting layer and a N-layer structure; the conducting layer is wrapped by the soft magnetic material layer; the N-layer structure is formed by combination of the soft magnetic material layer and the conducting layer; and simultaneously a bent structure is formed by N long lines in the plane (the sensing unit is a single-strip-shaped structure when N is equal to 1). The sensing unit of the sensor realizes single-axis, double-axis and three-axis magnetic field detection by different packaging forms. Simultaneously, due to the combination of the sensing unit of the sensor and a cantilever structure with magnetic mass blocks, the single-axis, double-axis and three-axis acceleration detection can be realized.
Owner:陈磊
Magnetic resistance Z-axis gradient sensor chip
ActiveCN103995240ASmall sizeReduce power consumptionMagnetic field measurement using flux-gate principleMagnetic field measurement using galvano-magnetic devicesMagnetic field gradientElectrical resistance and conductance
Owner:MULTIDIMENSION TECH CO LTD
Gas magnetometer
ActiveUS9329152B2High magnetic field sensitivityEliminate requirementsMagnetic property measurementsElectric/magnetic detectionPrecessionSpins
Owner:WISCONSIN ALUMNI RES FOUND
<100> Fe-Ga magnetostriction material on axial orientation and method of preparing the same
ActiveCN101109057ASimple structural designHigh magnetic field sensitivityFrom frozen solutionsMagnetostrictive material selectionBridgman methodRoom temperature
The invention discloses a <, a 100>, an axial orientation Fe-Ga magnetostriction material and the preparation method thereof. The material composites are Fe1-x-yGaxAly; wherein, x is between 16 per cent and 21 per cent or 25 per cent and 28 per cent; y is between 0 per cent and 10 per cent; the rest part is iron. The preparation method is that the raw material is melted under the protection of the inert gas, and the improved percy williams bridgman method is adopted to prepare the Fe-Ga magnetostriction material through the directional solidification; The heat treatment conditions are that the material is preserved at 1100 DEG C. to 1200 DEG C. for 0.5 hours to 24 hours, cooled with the furnace till 900 DEG C. to 750 DEG C. for 0.5 hours to 24 hours temperature preservation and then quenched or cooled by air to room temperature; or the material is preserved at 1100 DEG C. to 1200 DEG C. temperature for 0.5 hours to 24 hours and is cooled with the furnace till 500 to 700 DEG C..
Owner:GRIREM ADVANCED MATERIALS CO LTD
Method for manufacturing magnetosensitive device with giant magnetic impedance effect based on microelectrochenical system
InactiveCN1694276AHigh sensitivityImprove response speedMagnetic measurementsDecorative surface effectsHigh volume manufacturingEtching
This invention relates to a manufacturing method for a huge magnet impedance effect magnet-sensitive device based on micro-electromechanical system (MEMS), which applies MEMS technology to process a double-face oxidized silicon chip to get an aligned symbol carved in double faces so as to increase the aligned accuracy when exposing, applies a quasi-LIGA photo etching technology and micro plating to prepare a zigzag sandwich structure FeNi / Cu / FeNi soft magnet multiplayer membrane material, applies physical etching to remove the substrate to avoid the erosion brought with wet etching and offsets the huge magnet impedance effective curves by selecting suitable magnets to make the magnet-sensitive device to work in the linear zone.
Owner:SHANGHAI JIAO TONG UNIV
Magnetic field sensor utilizing ferromagnetic nanometer ring strong magnetic resistance effect
InactiveCN101363903AEasy to makeLarge output signalMagnetic measurementsElectrical resistance and conductanceNanometer size
The invention provides a magnetic field sensor utilizing the giant magnetoresistive effect of a ferromagnetic nano-ring, and belongs to the technical field of magnetic nano-sensors. The sensor is composed of a ferromagnetic nano-ring prepared on a substrate of nanometer size and a group of lead wires; the group of lead wires connected to the two ends of the ring also serve as a constant current source connecting wire and a voltage measurement connecting wire; the outside diameter D of the ferromagnetic nano-ring is 7 nm-10 um; the inside diameter d is smaller than the outside diameter D; the width of the ring is 5 nm-1 um; and the thickness of the nano-ring is 1 nm-500 nm. The sensor utilizes the ferromagnetic nano-ring under the action of the outside magnetic field, and the resistance the ferromagnetic nano-ring changes greatly, so as to detect the change of the outside magnetic field; the manufacture is very simple; the output signal is large; and the response is fast. The sensor is especially applicable to the detection of the threshold value of the magnetic field change; besides, the magnetic field sensitivity of the magnetic field transformation point can reach 2-10 percent / Oe or is higher than 2-10 percent / Oe, and the sensor also can serve as a magnetic cell.
Owner:UNIV OF SCI & TECH BEIJING
Multicomponent magnetic field sensor
ActiveUS20160169985A1Easy to manufactureHigh sensitivityMagnetic field offset compensationMagnetic sensor geometrical arrangementsElectrical resistance and conductanceSensor plane
A magnetic field sensor apparatus for determining two or three components of a magnetic field includes at least one Wheatstone bridge with two half-bridges, wherein each half-bridge includes at least two bridge resistors, and at least one of the two bridge resistors is a magnetic-field-sensitive resistor with respect to a magnetic field component in an X / Y magnetic field sensor plane, Arranged symmetrically between the two magnetic-field-sensitive bridge resistors is a ferromagnetic flux concentration element which generates magnetic field components which are anti-symmetric with respect to a Z magnetic field component oriented perpendicular to the X / Y magnetic field sensor plane and are in the X / Y magnetic field sensor plane. A coordinate aspect proposes a method for determining a two-dimensional three-dimensional orientation of an external magnetic field by such a magnetic field sensor apparatus.
Owner:SENSITEC
Magnetic sensitive material with high sensitivity
InactiveCN101552070AGood value for moneyReduce power consumptionMagnetic materialsSurface layerBias field
The invention relates to a magnetic material, in particular to a magnetic sensitive material with high sensitivity, wherein the magnetic sensitive material contains Fe and the alloy consisting of one or more compositions of Co, B, Si, Nb, V, Mn, Cu, Ni and Cr; the magnetic material is characterized in that the external surface layer is an amorphous shell layer and the inside of the magnetic sensitive material is a composite structure with a nano-crystalline internal core material. The nano-crystalline structure has the advantages of easy magnetization and high permeability in the longitudinal direction and the amorphous structure has the advantages of easy magnetization and high permeability in the ring direction vertical to the longitudinal direction; and the combination of the nano-crystalline structure and the amorphous structure can greatly improve the change rate of impedance and the magnetic field sensitivity, greatly improves the magnetic field sensitivity at a weak magnetic field, has the advantages of low-sensitivity response critical magnetic field (wherein the sensitivity response magnetic field can be less than 5A / m), being sensitive to weak magnetic field without needing a bias field, reducing the power dissipation of a magneto-dependent sensor, low cost, etc., and is a magnetic sensitive material with high cost-performance ratio and high sensitivity.
Owner:ZHEJIANG NORMAL UNIVERSITY
Magnetoresistive z-axis gradient sensor chip
ActiveUS20170205473A1Small sizeConvenience to workMagnetic field measurement using flux-gate principleMagnetic field measurement using galvano-magnetic devicesMagnetic field gradientIn plane
A magnetoresistive Z-axis gradient sensor chip, which is used to detect the gradient in the XY plane of a Z-axis magnetic field component generated by a magnetic medium; the sensor chip comprises a Si substrate, a collection of two or two groups of flux guide devices separated a distance Lg and an arrangement of electrically interconnected magnetoresistive sensor units. The magnetoresistive sensor units are located on the Si substrate and located above or below the edge of the flux guide devices as well; the flux guide devices convert the component of the Z-axis magnetic field into the direction parallel to the surface of the Si substrate along the sensing axis direction of the magnetoresistive sensing units. The magnetoresistive sensor units are electrically interconnected into a half bridge or a full bridge gradiometer arrangement, wherein the opposite bridge arms are separated by distance Lg. This sensor chip can be utilized with a PCB or in combination with a PCB plus back-bias magnet with casing. The sensor measures the Z-axis magnetic field gradient by using magnetoresistive sensors with in-plane sensing axes. This sensor chip has several advantages relative to a Hall Effect sensor device, including smaller size, lower power consumption, and higher magnetic field sensitivity.
Owner:MULTIDIMENSION TECH CO LTD
Complementary metal oxide semiconductor (CMOS) sensor with octagonal Hall disk structure and manufacturing method for CMOS sensor
InactiveCN102509767AHigh magnetic field sensitivityReduce thicknessGalvano-magnetic device detailsGalvano-magnetic hall-effect devicesCMOS
The invention discloses a complementary metal oxide semiconductor (CMOS) sensor with an octagonal Hall disk structure and a manufacturing method for the CMOS sensor. The CMOS sensor comprises a p type substrate, an octagonal n well, a p+ doped region, n+ doped regions, a depletion layer, a p+ lightly doped region, an oxide layer and an aluminum layer, wherein the octagonal n well is positioned on the p type substrate; the p+ doped region is positioned outside the edge of the octagonal n well; the n+ doped regions are positioned on the inner side of the edge of the octagonal n well; the depletion layer is positioned at the boundary of the octagonal n well and the p type substrate; the p+ lightly doped region is positioned above the octagonal n well; the oxide layer is positioned on the surface of the octagonal n well; and the aluminum layer is positioned above the n+ doped regions. Due to the adoption of the octagonal Hall disk structure, eight terminals can be provided to generate eight current directions and further greatly reduce offset.
Owner:HUNAN SEEKSUNS OPTOELECTRONICS TECH
Gas Magnetometer
ActiveUS20130033255A1High magnetic field sensitivityEliminate requirementsMagnetic property measurementsMagnitude/direction of magnetic fieldsPrecessionSpins
Measurement of a precessional rate of a gas, such as an alkali gas, in a magnetic field is made by promoting a non-uniform precession of the gas in which substantially no net magnetic field affects the gas during a majority of the precession cycle. This allows sensitive gases that would be subject to spin-exchange collision de-phasing to be effectively used for extremely sensitive measurements in the presence of an environmental magnetic field such as the Earth's magnetic field.
Owner:WISCONSIN ALUMNI RES FOUND
Magnetic field sensor and Hall device
ActiveCN103278783AAchieve balanceImplement differential outputMagnetic measurementsElectrical resistance and conductancePhysics
The invention discloses a magnetic field sensor and a Hall device. The magnetic field sensor comprises a bridge circuit. The bridge circuit comprises four bridge arms. Each bridge arm comprises a Hall resistance element. At least one bridge arm also comprises an adjustable resistance element connected in series with the Hall resistance element on the corresponding bridge arm; each Hall resistance element is provided with a pair of resistance output ends and a pair of current input ends; the resistance output ends are connected to the interior of the corresponding bridge arm on which the Hall resistance element is located; and the current input ends are used for receiving working current so as to generate Hall resistance at the resistance output ends. According to the magnetic field sensor and the Hall device disclosed by the invention, the bridge circuit consists of the four Hall resistance elements and the adjustable resistance elements, and thus, bridge balance when no magnetic field exists can be realized. According to the magnetic field sensor and the Hall device disclosed by the invention, bridge differential output can be realized when a magnetic field exists, and therefore, the zero-field offset problem of the Hall device is greatly lowered structurally. The magnetic field sensor and the Hall device are simple in process and are in favor of large-scale industrialized popularization.
Owner:INST OF PHYSICS - CHINESE ACAD OF SCI
Perovskites semimetal composite multilayer membrane prepared by one ingredient and use thereof
InactiveCN1827364ADoes not damage insulationGood lattice matchingMetal layered productsAlkaline earth metalGas detector
The invention relates to a component modulated perovskite semi-metallic composite multilayer film and relative application. Wherein the core of composite multilayer film is FM1 / I / FM2 / AFM, AFM / FM1 / I / FM2 or AFM1 / FM1 / I1 / FM2 / I2 / FM3 / AFM2, while all semi-metallic iron magnetic layers that FM1, FM2 and FM3, and the insulated barrier layer that I, I1, and I2 are all the perovskite oxide film; said perovskite oxide is Al-xBxMo3, while A is selected from one or several of 57-71 elements; B is one or several of alkali or alkali earth metals; M is selected from one or several of 22-30, 40-51 and 73-80 elements. The nearby material layers of said composite multilayer film has better lattice matching property, less interface stress, better layered structure, and high tunnel magnetic resistance, which can be used in magnetic sensitive, electric sensitive, optical sensitive and gas sensitive sensor, magnetic random memory and other self-rotational electric devices.
Owner:INST OF PHYSICS - CHINESE ACAD OF SCI
Film material for high-sensitivity metal Hall sensor and preparation method of film material
InactiveCN102024904AIncrease scatteringRaise the Hall signalGalvano-magnetic material selectionGalvano-magnetic hall-effect devicesResponse FrequencyFilm material
The design content of the invention discloses a film material for a high-sensitivity metal Hall sensor and a preparation method of the film material, relating to magnetic film materials. The film material disclosed by the invention is in a structure as follows: an insulating layer / Pt1 / [ Co / Pt2]n / insulating layer. The material with the structure has very strong Hall signals, and is processed into magnetic-field sensor elements with very high magnetic-field sensitivity by optimizing thicknesses of all layers. The film material for the high-sensitivity metal Hall sensor has the main advantages that the preparation technique for the designed material is simple, the magnetic field sensing range is large, the magnetic field sensitivity is obviously improved, the optimized magnetic field sensitivity is higher than the sensitivity of the currently-reported highest metal Hall sensor, the resistivity is low, the response frequency is wide, and simultaneously the defects that the Hall signal is low and anisotropy is not easy to adjust in the conventional material system are overcome. Therefore, the material can be used for manufacturing the high-sensitivity metal Hall sensor.
Owner:UNIV OF SCI & TECH BEIJING
Magnetoresistive mixer
ActiveUS20160164463A1High magnetic field sensitivityReduce power consumptionModulation transference balanced arrangementsMagnetic sensor arraysBridge typeDistribution characteristic
A magnetoresistive mixer, comprising a spiral coil, a bridge-type magnetoresistive sensor and a magnetic shielding layer, wherein the spiral coil is located between the bridge-type magnetoresistive sensor and the magnetic shielding layer. Four tunnel magnetoresistive sensor units forming the bridge-type magnetoresistive sensor respectively contain N array-type magnetic tunnel junction rows. The magnetic tunnel junction rows are connected in series, parallel, or combination of series and parallel connections to form two port structures. The four tunnel magnetoresistive sensor units are respectively located in two regions of the spiral coil having opposite current directions, sensing axes of magnetic tunnel junctions are perpendicular to the current directions, and in addition, the distribution characteristics of magnetic fields in directions of the sensing axes of the tunnel magnetoresistive sensor units to the magnetic field in the two regions are opposite, and the distribution characteristics in a single region are the same. The first frequency signal is input through the two ends of the spiral coil, the second frequency signal is input between the power and -ground ports of the bridge-type magnetoresistive sensor, and mixing signals are output through a signal output end of the bridge-type magnetoresistive sensor. The magnetoresistive mixer has the characteristics of good linearity, good input signal isolation, and low power consumption.
Owner:MULTIDIMENSION TECH CO LTD
Probe of high-temperature superconduting radio frequency quantum inteferometer
InactiveCN1470883AIncrease the effective areaHigh magnetic field sensitivityMagnetic field measurement using superconductive devicesMicrowaveCoupling
The probe of the HTc rf SQUID comprises the hollow coplane resonator of superconducting film, the magnetic flux focuser of superconducting film, SQUID device and the microwave-coupling loop. The SQUID device is positioned above the magnetic flux focuser, and the hollow coplane resonator is positioned between the SQUID device and the microwave-coupling loop but above the SQUID device. Since the air core coplane resonator is separated from the magnetic flux focuser, thus, bigger focuser can be made so as to obtain larger effective area and raise sensitivity of magnetic field. Designing size ofthe hollow coplane resonator makes the probe operate at frequencies between 1.23-1.42 GHz, center frequency near 1.3 GHz so as to avoid interference of radio communication frequency range.
Owner:PEKING UNIV
Material with giant magneto-impedance effect and preparation method thereof
InactiveCN102543357AImproved Transverse PermeabilityStrong exchange couplingCathode sputtering applicationMagnetic layersElectricityInsulation layer
The invention discloses a nanometer magnitude material capable of generating a remarkable magneto-impedance effect below 100 MHz, and a preparation method thereof. According to the invention, a structure of the material with the giant magneto-impedance effect is that: an insulation layer template with uniform holes is formed on a substrate material, nanowires made of cobalt or iron or cobalt-ironalloy or other magnetic materials are arranged in the holes of the insulation layer template, a layer of iron-nickel alloy film is arranged on the upper surfaces of the insulation layer template and the nanowires, the film and the nanowires form a brush-like structure, the substrate material is a metal material, and the insulation layer template is made of an electrically insulated metal oxide ora high polymer. According to the invention, the substrate metal material used in the material with the giant magneto-impedance effect can be aluminum or titanium, and the insulation template on the substrate metal material can be oxide of aluminum or titanium.
Owner:LANZHOU UNIVERSITY
Full-polarization Faraday magnetic field sensor based on Sagnac interference system and modulation method
ActiveCN111366881AHigh magnetic field sensitivityLarge dynamic rangeMagnetic measurement environmental aspectsMagnetic field measurement using magneto-optic devicesPolarization-maintaining optical fiberPolarizer
The invention discloses a full-polarization Faraday magnetic field sensor based on a Sagnac interference system and a modulation method. The full-polarization Faraday magnetic field sensor comprises alight source, an optical fiber coupler, a polarizer, a polarization beam splitter, a polarization controller, a magnetic field sensing unit, a detector and a polarization maintaining optical fiber. Alight signal is emitted by light source, and passes through an optical fiber coupler and a polarizer in sequence, and is divided into a clockwise path and an anticlockwise path by a polarization beamsplitter. A polarization controller and a polarization maintaining optical fiber ring are respectively arranged in the two light paths. Included angles between the fast axis directions of the two polarization maintaining optical fiber rings and the polarization direction of the polarizer are respectively clockwise 45 degrees and anticlockwise 45 degrees. The two polarization maintaining optical fiber rings are opposite in winding direction and equal in diameter and number of turns so as to counteract errors caused by the Sagnac effect. The magnetic field sensing unit is mainly composed of a coupling lens, a magnetic flux concentrator and a magneto-optical crystal, an external magnetic field influences the polarization state of an optical signal, and measurement of the magnetic field can be achieved by detecting the polarization interference result of the output optical signal.
Owner:ZHEJIANG UNIV
A magnetoresistive z-axis gradient sensor chip
ActiveCN103995240BSmall sizeReduce power consumptionMagnetic field measurement using flux-gate principleMagnetic field measurement using galvano-magnetic devicesMagnetic field gradientIn plane
The invention discloses a magnetoresistive Z-axis gradient sensor chip, which is used to detect the gradient of the Z-axis magnetic field component generated by a magnetic medium in the XY plane, so as to perform magnetic imaging on the magnetic medium. Two or two groups comprising a plurality of sets of flux guides, and an arrangement of electrically interconnected magnetoresistive sensing units, the magnetoresistive sensing units being located on a Si substrate above or below the edges of the flux guides, The flux guide transforms the Z-axis magnetic field component into a direction parallel to the surface of the Si substrate and along the sensitive axis of the magnetoresistive sensing unit, and the magnetoresistive sensing unit is electrically connected into a half-bridge or full-bridge gradiometer arrangement, wherein the opposite bridge The arms are separated by a distance of Lg, and the sensor chip can be used with PCB, PCB+back magnetic or PCB+back magnetic+packaging shell styles. The invention realizes the measurement of the Z-axis magnetic field gradient by using a planar sensitive magnetoresistive sensor, with small size and low power consumption , Compared with the Hall sensor, it has the advantages of higher magnetic field sensitivity.
Owner:MULTIDIMENSION TECH CO LTD
Multicomponent magnetic field sensor
ActiveUS9714989B2Easy to manufactureMaximum sensitivityMagnetic field offset compensationMagnetic sensor geometrical arrangementsElectrical resistance and conductanceSensor plane
A magnetic field sensor apparatus for determining two or three components of a magnetic field includes at least one Wheatstone bridge with two half-bridges, wherein each half-bridge includes at least two bridge resistors, and at least one of the two bridge resistors is a magnetic-field-sensitive resistor with respect to a magnetic field component in an X / Y magnetic field sensor plane. Arranged symmetrically between the two magnetic-field-sensitive bridge resistors is a ferromagnetic flux concentration element which generates magnetic field components which are anti-symmetric with respect to a Z magnetic field component oriented perpendicular to the X / Y magnetic field sensor plane and are in the X / Y magnetic field sensor plane. A coordinate aspect proposes a method for determining a two-dimensional or three-dimensional orientation of an external magnetic field by such a magnetic field sensor apparatus.
Owner:SENSITEC
Film material for high-sensitivity metal Hall sensor and preparation method of film material
InactiveCN102024904BIncrease scatteringRaise the Hall signalGalvano-magnetic material selectionGalvano-magnetic hall-effect devicesResponse FrequencyFilm material
The design content of the invention discloses a film material for a high-sensitivity metal Hall sensor and a preparation method of the film material, relating to magnetic film materials. The film material disclosed by the invention is in a structure as follows: an insulating layer / Pt1 / [ Co / Pt2]n / insulating layer. The material with the structure has very strong Hall signals, and is processed into magnetic-field sensor elements with very high magnetic-field sensitivity by optimizing thicknesses of all layers. The film material for the high-sensitivity metal Hall sensor has the main advantages that the preparation technique for the designed material is simple, the magnetic field sensing range is large, the magnetic field sensitivity is obviously improved, the optimized magnetic field sensitivity is higher than the sensitivity of the currently-reported highest metal Hall sensor, the resistivity is low, the response frequency is wide, and simultaneously the defects that the Hall signal is low and anisotropy is not easy to adjust in the conventional material system are overcome. Therefore, the material can be used for manufacturing the high-sensitivity metal Hall sensor.
Owner:UNIV OF SCI & TECH BEIJING
Magnetoresistive magnetic imaging sensor
ActiveUS10598743B2High magnetic field sensitivitySmall sizePaper-money testing devicesMagnetic sensor geometrical arrangementsImage detectionEngineering
A magnetoresistive magnetic imaging sensor for identifying a magnetic image comprises a PCB and several magnetoresistive sensor chips, wherein the several magnetoresistive sensor chips are located on the PCB, and the PCB is perpendicular or parallel to the magnetic image detection surface. It has a lateral detection mode and front detection mode. In the lateral detection mode, each side face of the several magnetoresistive sensor chips is parallel or coplanar with the side of the PCB, and parallel to the magnetic image detection surface. The several magnetoresistive sensor chips have the same magnetic sensing direction. In the lateral detection mode, the adjacent magnetoresistive sensor chips are stacked, while in the front detection mode, the adjacent magnetoresistive sensor chips are arranged in a staggered manner, in order to achieve continuity of the detection area in the magnetic image detection surface. The magnetoresistive magnetic imaging sensor may also comprise a permanent magnet assembly and a housing. The sensor has several advantages, including continuity across the detection area, good signal reproduction, high sensitivity, and low power consumption.
Owner:MULTIDIMENSION TECH CO LTD
Material with giant magneto-impedance effect and preparation method thereof
InactiveCN102543357BImproved Transverse PermeabilityStrong exchange couplingCathode sputtering applicationMagnetic layersElectricityInsulation layer
The invention discloses a nanometer magnitude material capable of generating a remarkable magneto-impedance effect below 100 MHz, and a preparation method thereof. According to the invention, a structure of the material with the giant magneto-impedance effect is that: an insulation layer template with uniform holes is formed on a substrate material, nanowires made of cobalt or iron or cobalt-ironalloy or other magnetic materials are arranged in the holes of the insulation layer template, a layer of iron-nickel alloy film is arranged on the upper surfaces of the insulation layer template and the nanowires, the film and the nanowires form a brush-like structure, the substrate material is a metal material, and the insulation layer template is made of an electrically insulated metal oxide ora high polymer. According to the invention, the substrate metal material used in the material with the giant magneto-impedance effect can be aluminum or titanium, and the insulation template on the substrate metal material can be oxide of aluminum or titanium.
Owner:LANZHOU UNIVERSITY
Preparation of nanocrystalline material for amorphous external layer
ActiveCN101481782AGood value for moneyHigh magnetic field sensitivityContinuous currentCost performance
The invention relates to a preparation method for a nano-crystalline material, in particular to a preparation method for an amorphous exoexine nano-crystalline material. The key points are as follows: treatment is carried out on a amorphous material by using joule heat in flowing gas; due to the passing of continuous current, the temperature of the amorphous material is increased continuously, and after the temperature reaches the nano-crystallization temperature, nano-crystallization is carried out on the material; under the effect of the flowing gas of the surface layer, large amount of heat is taken away, the temperature cannot reach the nano-crystallization temperature, so the material is not nano-crystallized and is still in the amorphous state; therefore, the amorphous exoexine nano-crystalline material is formed. The invention has compact preparation structure, can combine the advantages of two types of materials into one body and also can prepare the material with excellent performance and high cost performance.
Owner:苏州九一高科无纺设备有限公司
Micro-displacement measurement method and sensing device for dual-workpiece platforms of photoetching machine
InactiveCN102880015AEasy to installImprove linearityUsing electrical meansPhotomechanical exposure apparatusRelative displacementThree dimensional measurement
The invention discloses a micro-displacement measurement method and a sensing device for dual-workpiece platforms of a photoetching machine and belongs to technologies of integrated circuit (IC) manufacturing, ultra precise measurement and ultra precise processing. The measurement method comprises that output Hall voltage signals of a Hall micro-displacement sensor are changed linearly along with the relative displacement of macro and micro dual-workpiece platforms, and an external detection circuit processes and synthesizes output signals of the Hall sensor to finish measurement. The device solves the problems of high-speed high-precision relative position detection of special positions such as a Chuck platform and a mask platform of a photoetching macro and micro dual driving mechanism, the device has the advantages of being free from contacts, good in linearity, high in integration level and high in portable capability, one-dimensional measurement, two-dimensional measurement or three-dimensional measurement can be achieved, and the environmental requirements of a photoetching system can be met.
Owner:HARBIN INST OF TECH
Inertia/geomagnetism integrated navigation system low-noise measurement circuit based on three-axis TMR sensor
ActiveCN111964672AReduce power consumptionImprove flatnessNavigation by terrestrial meansNavigation by speed/acceleration measurementsLow noiseSignal processing circuits
The invention relates to the technical field of navigation equipment circuits, in particular to an inertia / terrestrial magnetism integrated navigation system low noise measuring circuit based on a three-axis TMR sensor. The inertia / terrestrial magnetism integrated navigation system low noise measuring circuit based on the three-axis TMR sensor comprises a power supply module, a signal processing module and an information acquisition module, and the power supply module comprises a + 2.5 V output power supply circuit, a + 3.3 V output voltage power supply circuit and a + 5V buffer voltage powersupply circuit; the information acquisition module comprises a three-axis tunneling magnetoresistive magnetic sensor circuit and an inertial sensor measurement circuit; the signal processing module comprises an X-axis signal processing circuit, a Y-axis signal processing circuit, a Z-axis signal processing circuit and an AD conversion circuit; according to the invention, an underwater vehicle witha certain volume can continuously work underwater for a longer time, and the problem that the noise of a signal is not thoroughly filtered at a high frequency due to lower frequency of a measurementmagnetic field is solved.
Owner:武汉利科夫科技有限公司
High-sensitivity vertical magnetic field sensor with symmetrical structure
ActiveCN110736942ASimple production processHigh magnetic field sensitivityGalvano-magnetic hall-effect devicesGalvano-magnetic device manufacture/treatmentGate dielectricCondensed matter physics
The invention discloses a high-sensitivity vertical magnetic field sensor with a symmetrical structure. The magnetic field sensor comprises a first vertical magnetic field sensor and a second verticalmagnetic field sensor, which are vertically and symmetrically arranged, wherein the first vertical magnetic field sensor and the second vertical magnetic field sensor share a third N + region. The magnetic field sensor comprises a silicon substrate, an insulator layer, a first P-region, a second P- region, a third P- region, a fourth P- region, a first N + region, a second N + region, a third N +region, a fourth N + region, a fifth N + region, a gate dielectric layer and a gate. The magnetic field sensor with the symmetrical structure has a simple production process, a completely symmetricalstructure and low initial device offset, furthermore, the device offset can be eliminated by using the rotating current technology, and the residual offset is low. The vertical magnetic field sensorhas high magnetic field sensitivity, and can form a two-dimensional magnetic field sensor to realize the detection of a two-dimensional magnetic field parallel to a device plane.
Owner:NANJING UNIV OF POSTS & TELECOMM
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