Method for manufacturing magnetosensitive device with giant magnetic impedance effect based on microelectrochenical system

A micro-electromechanical system and giant magneto-impedance technology, applied in the field of sensors, can solve the problems of fragile wire and thin strip, difficult installation, welding of wire and thin strip, etc., and achieve the effect of improving sensitivity, low cost and good repeatability

Inactive Publication Date: 2005-11-09
SHANGHAI JIAO TONG UNIV
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, wires and ribbons will encounter many problems in terms of miniaturization, repeatability of device performance, mass production, and matching with detection circuits, such as welding of wires and ribbons in circuits, difficulty in installation, wire and ribbons Thin strips are easily broken, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] It will be further described below in conjunction with the embodiments.

[0030] The manufacturing method of the present invention, specifically:

[0031] (1) The double-sided oxidized silicon wafer substrate that has been cleaned and double-sided positive-spun glue, the thickness of the photoresist is 5μm, the drying temperature of the photoresist is 95℃, and the time is 30 minutes; after single-sided exposure and development, Use BHF etching solution to etch silicon dioxide, the etching temperature is 40 ℃, and then remove the photoresist;

[0032] (2) Perform the magnetic sensing device preparation process on the other side of the silicon wafer (referred to as the A side), and the following are all performed on the A side;

[0033] (3) Sputtering FeNi bottom layer with a thickness of 80-100nm;

[0034] (4) The thickness of the photoresist is 15μm, the drying temperature of the photoresist is 90-95℃, and the time is 60 minutes. Exposure and development, to obtain the elec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
lengthaaaaaaaaaa
widthaaaaaaaaaa
Login to view more

Abstract

This invention relates to a manufacturing method for a huge magnet impedance effect magnet-sensitive device based on micro-electromechanical system (MEMS), which applies MEMS technology to process a double-face oxidized silicon chip to get an aligned symbol carved in double faces so as to increase the aligned accuracy when exposing, applies a quasi-LIGA photo etching technology and micro plating to prepare a zigzag sandwich structure FeNi/Cu/FeNi soft magnet multiplayer membrane material, applies physical etching to remove the substrate to avoid the erosion brought with wet etching and offsets the huge magnet impedance effective curves by selecting suitable magnets to make the magnet-sensitive device to work in the linear zone.

Description

Technical field [0001] The invention relates to a manufacturing method of a magneto-sensitive device, in particular to a manufacturing method of a giant magneto-impedance effect magneto-sensitive device based on a micro-electromechanical system. It belongs to the field of sensor technology. technical background [0002] With the rapid development of microelectronics technology, some new, miniaturized, high-performance, high-sensitivity and fast-response new magnetic sensors are needed to monitor the environment in automotive electronics, robotics, bioengineering, and automation control. Surrounding parameters such as: magnetic field, speed, rotation speed, displacement, angle, torque, etc. Magnetic sensors currently being used or developed on the market include Hall effect sensors, anisotropic magnetoresistance (AMR) effect and giant magnetoresistance (GMR) effect sensors. Hall-effect sensor is currently the most widely used magnetic sensor, which can be used for the measurement ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12
Inventor 周勇丁文曹莹陈吉安周志敏
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap