Method for manufacturing magnetosensitive device with giant magnetic impedance effect based on microelectrochenical system

Abstract

This invention relates to a manufacturing method for a huge magnet impedance effect magnet-sensitive device based on micro-electromechanical system (MEMS), which applies MEMS technology to process a double-face oxidized silicon chip to get an aligned symbol carved in double faces so as to increase the aligned accuracy when exposing, applies a quasi-LIGA photo etching technology and micro plating to prepare a zigzag sandwich structure FeNi / Cu / FeNi soft magnet multiplayer membrane material, applies physical etching to remove the substrate to avoid the erosion brought with wet etching and offsets the huge magnet impedance effective curves by selecting suitable magnets to make the magnet-sensitive device to work in the linear zone.

Description

Technical field

[0001] The invention relates to a manufacturing method of a magneto-sensitive device, in particular to a manufacturing method of a giant magneto-impedance effect magneto-sensitive device based on a micro-electromechanical system. It belongs to the field of sensor technology. technical background

[0002] With the rapid development of microelectronics technology, some new, miniaturized, high-performance, high-sensitivity and fast-response new magnetic sensors are needed to monitor the environment in automotive electronics, robotics, bioengineering, and automation control. Surrounding parameters such as: magnetic field, speed, rotation speed, displacement, angle, torque, etc. Magnetic sensors currently being used or developed on the market include Hall effect sensors, anisotropic magnetoresistance (AMR) effect and giant magnetoresistance (GMR) effect sensors. Hall-effect sensor is currently the most widely used magnetic sensor, which can be used for the measurement ...