Complementary metal oxide semiconductor (CMOS) sensor with octagonal Hall disk structure and manufacturing method for CMOS sensor

Abstract

The invention discloses a complementary metal oxide semiconductor (CMOS) sensor with an octagonal Hall disk structure and a manufacturing method for the CMOS sensor. The CMOS sensor comprises a p type substrate, an octagonal n well, a p+ doped region, n+ doped regions, a depletion layer, a p+ lightly doped region, an oxide layer and an aluminum layer, wherein the octagonal n well is positioned on the p type substrate; the p+ doped region is positioned outside the edge of the octagonal n well; the n+ doped regions are positioned on the inner side of the edge of the octagonal n well; the depletion layer is positioned at the boundary of the octagonal n well and the p type substrate; the p+ lightly doped region is positioned above the octagonal n well; the oxide layer is positioned on the surface of the octagonal n well; and the aluminum layer is positioned above the n+ doped regions. Due to the adoption of the octagonal Hall disk structure, eight terminals can be provided to generate eight current directions and further greatly reduce offset.

Description

technical field [0001] The invention relates to a CMOS sensor and a manufacturing method thereof, in particular to a CMOS sensor with a regular octagonal Hall disk structure and a manufacturing method thereof. Background technique [0002] At present, CMOS Hall-effect sensors are usually made of a simple square conductor material (ie, a Hall disk), such as an n-well resistor, leaving at least four terminals around it for outputting current and extracting magnetic field-induced voltage. Among them, the bias current of the Hall plate passes through two terminals with opposite positions, and the position of the other two terminals is perpendicular to the position of the current terminal, which is called the voltage terminal. When a magnetic field is applied vertically to the surface of the conductor, a voltage output can be detected on the voltage terminal, which is called the Hall voltage according to the Hall effect. A major problem with existing CMOS Hall plates is output m...

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Problems solved by technology

That is, when there is no magnetic field, the voltage terminal will also output voltage, which will inevitably bring a large error to the magnetic field measurement

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