Complementary metal oxide semiconductor (CMOS) sensor with octagonal Hall disk structure and manufacturing method for CMOS sensor

A CMOS sensor, regular octagonal technology, applied in the CMOS sensor with regular octagonal Hall plate structure and its production field, can solve the problems of magnetic field measurement error, etc., achieve the reduction of offset, thickness reduction, and increase of average resistivity Effect

Inactive Publication Date: 2012-06-20
HUNAN SEEKSUNS OPTOELECTRONICS TECH
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, when there is no magnetic field, the voltage terminal will also output voltage, which will inevitably bring a large error to the magnetic field measurement

Method used

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  • Complementary metal oxide semiconductor (CMOS) sensor with octagonal Hall disk structure and manufacturing method for CMOS sensor
  • Complementary metal oxide semiconductor (CMOS) sensor with octagonal Hall disk structure and manufacturing method for CMOS sensor
  • Complementary metal oxide semiconductor (CMOS) sensor with octagonal Hall disk structure and manufacturing method for CMOS sensor

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Embodiment Construction

[0018] Such as figure 1 , figure 2 As shown, a CMOS sensor with a regular octagonal Hall disk structure includes a p-type substrate 207, a regular octagonal n-well 208, a p+ doped region 211, an n+ doped region (201, 202, 203, 204, 205 , where 201, 202, 203, 204, and 205 correspond to figure 1 terminal 1, terminal 2, terminal 3, terminal 4 and terminal 5), depletion layer 210, lightly doped p+ doped region 209, oxide layer 212 and aluminum layer 213, the regular octagonal n-well 208 is located On the p-type substrate 207, the p+ doped region 211 is located outside the edge of the regular octagonal n-well 208, and the n+ doped regions (201, 202, 203, 204, 205) are located inside the edge of the regular octagonal n-well 208. The depletion layer 210 is located at the junction of the regular octagonal n-well 208 and the p-type substrate 207, the lightly doped p+ doped region 209 is located above the regular octagonal n-well 208, and the oxide layer 212 is located on the regular...

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Abstract

The invention discloses a complementary metal oxide semiconductor (CMOS) sensor with an octagonal Hall disk structure and a manufacturing method for the CMOS sensor. The CMOS sensor comprises a p type substrate, an octagonal n well, a p+ doped region, n+ doped regions, a depletion layer, a p+ lightly doped region, an oxide layer and an aluminum layer, wherein the octagonal n well is positioned on the p type substrate; the p+ doped region is positioned outside the edge of the octagonal n well; the n+ doped regions are positioned on the inner side of the edge of the octagonal n well; the depletion layer is positioned at the boundary of the octagonal n well and the p type substrate; the p+ lightly doped region is positioned above the octagonal n well; the oxide layer is positioned on the surface of the octagonal n well; and the aluminum layer is positioned above the n+ doped regions. Due to the adoption of the octagonal Hall disk structure, eight terminals can be provided to generate eight current directions and further greatly reduce offset.

Description

technical field [0001] The invention relates to a CMOS sensor and a manufacturing method thereof, in particular to a CMOS sensor with a regular octagonal Hall disk structure and a manufacturing method thereof. Background technique [0002] At present, CMOS Hall-effect sensors are usually made of a simple square conductor material (ie, a Hall disk), such as an n-well resistor, leaving at least four terminals around it for outputting current and extracting magnetic field-induced voltage. Among them, the bias current of the Hall plate passes through two terminals with opposite positions, and the position of the other two terminals is perpendicular to the position of the current terminal, which is called the voltage terminal. When a magnetic field is applied vertically to the surface of the conductor, a voltage output can be detected on the voltage terminal, which is called the Hall voltage according to the Hall effect. A major problem with existing CMOS Hall plates is output m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/06H01L43/04H01L43/14
Inventor 郭晓雷金湘亮夏宇
Owner HUNAN SEEKSUNS OPTOELECTRONICS TECH
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