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Film material for high-sensitivity metal Hall sensor and preparation method of film material

A technology of Hall sensor and thin film material, which is applied in the field of metal magnetic field sensor thin film material and its preparation, can solve the problem of weak Hall signal, etc., and achieve the effects of improved magnetic field sensitivity, simple preparation process, and obvious magnetic field sensitivity

Inactive Publication Date: 2011-04-20
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the Hall signal of this system is not strong, and its Hall resistivity is only 0.6μΩ·cm
If the Hall signal can be improved while maintaining the adjustable anisotropy, the sensitivity of the metal Hall sensor will have a greater leap

Method used

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  • Film material for high-sensitivity metal Hall sensor and preparation method of film material
  • Film material for high-sensitivity metal Hall sensor and preparation method of film material

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Experimental program
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Effect test

Embodiment 1

[0021] The magnetic film was prepared in a magnetron sputtering apparatus. First, the monocrystalline silicon substrate was cleaned ultrasonically with organic chemical solvents and deionized water, and then mounted on the sample base of the vacuum sputtering chamber. The substrate is cooled by circulating water. Background vacuum during sputtering 1×10 -5 Pa, deposited sequentially under the condition of argon (purity 99.99%) pressure 0.2Pa as well as The film is produced. Then, the thin film material is processed into a Hall resistance bar element with a line width of 30 microns through general semiconductor processing technology; general semiconductor processing technology refers to: glue rejection, exposure, development, film hardening, etching, etc.

[0022] figure 1 It is a schematic diagram of the structure of the Hall resistance bar. figure 2 It is the Hall signal output curve of the film material measured by the standard four-probe method. The magnetic field sensit...

Embodiment 2

[0024] The magnetic film was prepared in a magnetron sputtering apparatus. First, the monocrystalline silicon substrate was cleaned ultrasonically with organic chemical solvents and deionized water, and then mounted on the sample base of the vacuum sputtering chamber. The substrate is cooled by circulating water. Background vacuum during sputtering 1×10 -5 Pa, under the condition of argon (purity 99.99%) pressure of 0.2Pa, the deposition structure is (t respectively take 5, ) Series of films. Then, the thin film material is processed into a Hall resistance bar element with a line width of 30 microns through a general semiconductor processing technology; the general semiconductor processing technology refers to: glue rejection, exposure, development, film hardening, etching, etc.

[0025] image 3 The series of thin film materials with the above structure are designed and processed into the Hall signal output curve of the Hall resistance bar element; it can be seen that by opti...

Embodiment 3

[0027] The magnetic film was prepared in a magnetron sputtering apparatus. First, the monocrystalline silicon substrate was cleaned ultrasonically with organic chemical solvents and deionized water, and then mounted on the sample base of the vacuum sputtering chamber. The substrate is cooled by circulating water. Background vacuum during sputtering 1×10 -5 Pa, under the condition of argon (purity 99.99%) pressure of 0.2Pa, the deposition structure is (n takes 2-10) and the structure is (n takes 2-10) series of films. Then, the thin film material is processed into a Hall resistance bar element with a line width of 30 microns through general semiconductor processing technology; general semiconductor processing technology refers to: glue rejection, exposure, development, film hardening, etching, etc.

[0028] Figure 4 The series of thin film materials with the above structure are designed and processed into a curve of the magnetic field sensitivity of the Hall resistance bar e...

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Abstract

The design content of the invention discloses a film material for a high-sensitivity metal Hall sensor and a preparation method of the film material, relating to magnetic film materials. The film material disclosed by the invention is in a structure as follows: an insulating layer / Pt1 / [ Co / Pt2]n / insulating layer. The material with the structure has very strong Hall signals, and is processed into magnetic-field sensor elements with very high magnetic-field sensitivity by optimizing thicknesses of all layers. The film material for the high-sensitivity metal Hall sensor has the main advantages that the preparation technique for the designed material is simple, the magnetic field sensing range is large, the magnetic field sensitivity is obviously improved, the optimized magnetic field sensitivity is higher than the sensitivity of the currently-reported highest metal Hall sensor, the resistivity is low, the response frequency is wide, and simultaneously the defects that the Hall signal is low and anisotropy is not easy to adjust in the conventional material system are overcome. Therefore, the material can be used for manufacturing the high-sensitivity metal Hall sensor.

Description

Technical field [0001] The invention relates to a magnetic film material, in particular to a metal magnetic field sensor film material with an abnormal Hall effect and a preparation method thereof. Background technique [0002] Magnetic metal materials with abnormal Hall effect (EHE) can be used for magnetic measurement, production of magnetic recording media and magnetic field sensors and other applications. Due to the low resistivity, wide response frequency, low temperature coefficient, and simple manufacturing process of metal Hall sensors, magnetic metal Hall sensors with EHE have gradually shown a trend to replace semiconductor Hall sensors. However, for excellent magnetic sensors, the high magnetic field sensitivity (dV xy / dH) is the most important indicator. To obtain high sensitivity, the material needs to have a larger Hall signal or a lower hard-axis saturation field. However, materials with large Hall signals tend to have large saturation fields. For example, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/10H01L43/06H01L43/14H10N52/00H10N52/01
Inventor 张石磊滕蛟于广华
Owner UNIV OF SCI & TECH BEIJING
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