339results about How to "Avoid yield loss" patented technology

An EFEM includes a housing 3 that constitutes a wafer transport chamber 9 that is substantially closed by connecting load ports 4 to an opening 31a provided on a wall 31, and connecting a processing apparatus 6; a wafer transport apparatus 2, and transports a wafer between the processing apparatus 6 and the FOUPs 7 mounted on the load ports 4; a gas delivery port 11; a gas suction port 12; a gas feedback path 10; and a FFU 13 that includes a filter 13b that is provided in the gas delivery port 11, and eliminates particles contained in the delivered gas, wherein the gas in the wafer transport chamber 9 is circulated by generating a downward gasflow in the wafer transport chamber 9 and feeding back the gas through the gas feedback path 10.

A plurality of sensor packages (4) are fixed to a circuit assembly board (47) and placed on a lower mold die (56) of a transfer molding apparatus (54). Attached inside a cavity (58a) of an upper mold die (58) is a protection sheet (65), which will make contact with the upper face of a cover glass (6) of each sensor package (4). When the upper mold die (58) meshes with the lower mold die (56), the upper face of the cover glass (6) is tightly covered with the protection sheet (65). A plunger (62) is activated to fill the cavities (56a, 58a) with sealing resin (7). The upper face of the cover glass (6) is not stained or damaged when the peripheries of the sensor packages (4) are sealed.

A method and system of treating plants is provided. The method includes measuring optical properties of a plant using a plurality of spectral bands. The method further includes calculating in a computational device at least two vegetative indexes using the optical properties, each of the at least two vegetative indexes correlating to one or more plant growth parameters. The method further includes calculating in the computational device a water invariant chlorophyll index from at least two vegetative indexes using the plurality of spectral bands. The also provides for treating one or more of the plants based on the water invariant chlorophyll index.

To provide a semiconductor device having a structure with which the device can be easily manufactured even if the size is decreased and which can suppress a decrease in electrical characteristics caused by the decrease in the size, and a manufacturing method thereof. A source electrode layer and a drain electrode layer are formed on an upper surface of an oxide semiconductor layer. A side surface of the oxide semiconductor layer and a side surface of the source electrode layer are provided on the same surface and are electrically connected to a first wiring. Further, a side surface of the oxide semiconductor layer and a side surface of the drain electrode layer are provided on the same surface and are electrically connected to a second wiring.

An omnidirectional antenna includes a substrate, a signal feed-in portion, a first radiation unit, and a second radiation unit. The first radiation unit is located on a first surface of the substrate, and electrically connected to a first circuit of the first surface. The first radiation unit has a first extension end and a second extension end. The second radiation unit is located on a second surface of the substrate, and electrically connected to a second circuit of the second surface. The second radiation unit has a third extension end and a fourth extension end. The first extension end is disposed corresponding to the third extension end, and the second extension end is disposed corresponding to the fourth extension end. The signal feed-in portion is located on the first circuit and the second circuit. Thus, the impedance is improved, a wider bandwidth is achieved, and the process is simplified.

Cooling control device for a condenser is provided which includes the condenser, a cooling device for cooling the condenser, and a control device for controlling the cooling device. The cooling device includes a first cooling fan for cooling a gaseous-phase portion of the condenser, and two second cooling fans for cooling a liquid-phase portion of the condenser independently of the first cooling fan. The control device also includes a pressure control section for optimally adjusting a pressure within the gaseous-phase portion, and a temperature control section for optimally adjusting a temperature within the liquid-phase portion. The pressure control section operates the first cooling fan, in accordance with a detected pressure within the gaseous-phase portion, to adjust the pressure within the gaseous-phase portion. The temperature control section operates the second cooling fans, in accordance with a detected temperature within the liquid-phase portion, to adjust the temperature within the liquid-phase portion.

A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.

A polishing apparatus is disclosed, comprising a polishing section configured to polish a substrate, wherein the substrate has a plurality of laminating films including an upper layer and a lower layer; a measurement section configured to measure a thickness of a film formed on the substrate; an interface configured to input a desired thickness of a film formed on a substrate to be polished; an arithmetic unit operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate. The invention also discloses a polishing method.

Objects are to obtain a minute transistor by reducing the channel length L of a transistor used in a semiconductor integrated circuit such as an LSI, a CPU, or a memory, increase the operation speed of the circuit, and reduce power consumption. Oxide layers having compositions different from the composition of an oxide semiconductor layer including a channel formation region are provided below and over the oxide semiconductor layer, and in the oxide semiconductor layer including the channel formation region, low-resistance regions are provided to interpose the channel formation region therebetween in the lateral direction. The low-resistance regions are formed in a region other than the channel formation region so as to be in contact with a metal film or a metal oxide film by diffusion of a metal element (e.g., aluminum) contained in the metal or metal oxide films into the parts of the oxide semiconductor layer.

It is an object of the present invention to provide a control circuit and a control method for a current mode control type DC—DC converter capable of preventing a subharmonic oscillation even if an on-duty is not less than 50% and capable of preventing a switching frequency from fluctuating depending on an input voltage. When a high-level output signal Vo1 is inputted to a reset input terminal R of a flip-flop FF, a transistor FET1 is turned off. A phase comparator FC outputs a comparison result signal CONT in accordance with a phase difference between a delay signal FP and a reference signal FR. A delay circuit DLY outputs a high-level delay signal FP after the passage of a delay time DT adjusted in accordance with the comparison result signal CONT from the turn-off of the transistor FET1. The transistor FET1 is turned on in accordance with an input of the high-level delay signal FP.

A semiconductor memory device includes a memory cell having a circuit configuration in which a potential supplied to sources of load transistors 108 and 111 included in a latch section is different from at least one of a potential supplied to a word line 105 and a potential supplied to bit lines 106 and 107; a latch potential control circuit 101 for switching a normal operation mode and a test mode to each other in accordance with a signal applied to a test mode setting pin 102; and a read/write control circuit 103 for controlling the potential supplied to the sources of the load transistors 108 and 111 to be lower than at least one of the potential supplied to the word line 105 and the potential supplied to the bit lines 106 and 107, during an arbitrary period of at least a read operation in the test mode.

A tandem vehicle alternator has dual electrical power generation units. Each generation unit has a Lundel type rotor core and a stator coil. The Lundel type rotor cores are arranged in a tandem arrangement in the vehicle alternator. Each stator coil is composed of sequential segment joining type stator coils. A center position of an inside disk part in a pair of disk parts, placed at the outside of the rotor core, is positioned within a width of an armature iron core as a stator core. This configuration enlarges a gap between inner coil ends faced to each other in the adjacent stator coils at the inside in the axis direction, cools those inner coil ends, and reduces a mutual inductance generated between the inner coil ends. The feature improves the output of the vehicle alternator and enhances the independent control of each generation unit.

In the method for producing a layer system on a dielectric substrate in which a metal layer is applied onto the substrate by a coating step (110) and a further layer with a predetermined layer thickness is subsequently applied by a further coating step (140), the metal layer having a sheet resistance >10 Mohm and an average reflectance >50%, the further layer would have a sheet resistance <1 Mohm if it had been applied onto the substrate with the same layer thickness by the further coating step (140), and the layer system consisting of the metal layer and the further layer has a sheet resistance >10 Mohm, where the invention furthermore relates to a layer system on a dielectric substrate in which a metal layer is applied onto the substrate by a coating step (110) and a further layer with a predetermined layer thickness is subsequently applied by a further coating step (140), the metal layer having a sheet resistance >10 Mohm and an average reflectance >50%, where the further layer, if it had been applied onto the substrate with the same layer thickness by the further coating step (140), would have a sheet resistance <1 Mohm, and the layer system consisting of the metal layer and the further layer has a sheet resistance >10 Mohm, the invention further providing a housing including a layer system.

A display device includes a laminated wiring formed of a low-resistance conductive film, and a low-reflection film mainly containing Al and functioning as an antireflective film which are sequentially arranged on a transparent substrate, a wiring terminal part provided at an end part of the laminated wiring and has the same laminated structure as that of the laminated wiring, and an insulating film for covering the laminated wiring and the wiring terminal part, in which the insulating film side serves as a display surface side, the wiring terminal part has a first opening part penetrating the insulating film and the low-reflection film and reaching the low-resistance conductive film, and an outer peripheral portion of the first opening part has a laminated structure of the low-resistance conductive film, the low-reflection film, and the insulating film, in at least one part.

A chemical mechanical polishing method of the present invention comprises conducting polishing by the use of a chemical mechanical polishing aqueous dispersion (A) containing abrasive grains and then conducting polishing by the use of a chemical mechanical polishing aqueous composition (B) containing at least one organic compound having a heterocyclic ring in addition to the chemical mechanical polishing aqueous dispersion (A). Also A chemical mechanical polishing agent kit of the present invention comprises the chemical mechanical polishing aqueous dispersion (A) and the chemical mechanical polishing aqueous composition (B). The polishing method and the polishing agent kit can prevent an increase of dishing and corrosion of wiring portion to enhance the yield.