78results about How to "Improve sheet resistance" patented technology

Metal nanowires with high linearity can be produced using metal salts at a relatively low temperature. A transparent conductive film can be formed using the metal nanowires. Particularly, the transparent conductive film has high transmittance, low sheet resistance, and good thermal, chemical and mechanical stability. The transparent conductive film has a high electrical conductivity due to the high linearity of the metal nanowires. The metal nanowires take up 5% or less of the volume of the transparent conductive film, ensuring high transmittance of the transparent conductive film. Furthermore, the metal nanowires are useful as replacements for existing conductive materials, such as ITO, conductive polymers, carbon nanotubes and graphene. The metal nanowires can be applied to flexible substrates and other various substrates due to their good adhesion and high applicability to the substrates. Moreover, the metal nanowires can find application in various fields, such as displays and solar cell devices.

Disclosed are a variety of junction termination structures for high voltage semiconductor power devices. The structures are specifically aimed at providing a high breakdown voltage while being constructed with a minimal number of process steps. The combination of an RIE etch and/or implantation and anneal process with a finely patterned mesh provides the desired radial gradient for maximum breakdown voltage. The structures provide control of both the conductivity and charge density within the region. These structures can beneficially be applied to all high voltage semiconductor device structures, but are of particular interest for wide bandgap devices as they tend to have very high breakdown fields and scaled dimensions of the depletion layer width.

A semiconductor structure that includes at least one circuit element of a fuse, a diffusion barrier or a capacitor that is formed by refractory metal-silicon-nitrogen is disclosed. A method for fabricating such semiconductor structure that includes a fuse element, a diffusion barrier, a resistor or a capacitor by a refractory metal-silicon-nitrogen material is further disclosed. A suitable refractory metal-silicon-nitrogen material to be used is TaSiN which provides a wide range of resistivity by changing the ratio of Ta:Si:N. The invention provides the benefit that the various components of diffusion barriers, fuses, capacitors and resistors may be formed by a single deposition process of a TaSiN layer, the various components are then selectively masked and treated by either heat-treating or ion-implantation to vary their resistivity selectively while keeping the other shielded elements at the same resistivity.

The invention discloses a method for manufacturing a silicon solar cell. In the process of manufacturing a PN junction on a silicon wafer, a selective diffusion technology method is adopted, i,e. laser is utilized to heat a position, on which a positive electrode intends to be manufactured, on the surface of the silicon wafer; and under the action of heating, phosphorus in a phosphorus source uniformly adhered on the surface diffuses towards the inner of the silicon wafer, thus a heavy doping zone with smaller sheet resistance is formed at the position on which the positive electrode intends to be manufactured to effectively reduce the sheet resistance of the silicon solar cell, thereby not only being beneficial for increasing the open-circuit voltage of the silicon solar cell; the increase of the open-circuit voltage effectively improves the conversion efficiency of the silicon solar cell, reduces ohmic contact of a metal electrode and the silicon solar cell, thereby reducing the series resistance of the silicon solar cell, and being capable of meeting the purpose of industrialized production better.

This invention relates to a new improved method and structure in the fabricating of aluminum metal pads. The formation special aluminum bond pad metal structures are described which improve adhesion between the tantalum nitride pad barrier layer and the underlying copper pad metallurgy by a special interlocking bond pad structure. It is the object of the present invention to provide a process wherein a special grid of interlocking via structures is placed in between the underlying copper pad metal and the top tantalum nitride pad barrier layer providing improved adhesion to the aluminum pad metal stack structure. This unique contact bond pad structure provides for thermal stress relief, improved wire bond adhesion to the aluminum pad, and prevents peeling during wire bond adhesion tests.

The present invention teaches the formation of CMOS transistors using interfacial nitrogen at the interface between the lightly doped extension regions and an overlying insulating layer in combination with a capping layer of silicon nitride, both prior to the final source/drain anneal. Doses and energies may be increased for the P-channel lightly-doped drain, source and drain regions. The resulting transistors exhibit desirably high drive current and low off-state leakage current and overlap capacitance.

A semiconductor device includes a transistor, a capacitor and a resistor wherein the capacitor includes a doped polysilicon layer to function as a bottom conductive layer with a salicide block (SAB) layer as a dielectric layer covered by a Ti/TiN layer as a top conductive layer thus constituting a single polysilicon layer metal-insulator-polysilicon (MIP) structure. While the high sheet rho resistor is also formed on the same single polysilicon layer with differential doping of the polysilicon layer.

In the method for producing a layer system on a dielectric substrate in which a metal layer is applied onto the substrate by a coating step (110) and a further layer with a predetermined layer thickness is subsequently applied by a further coating step (140), the metal layer having a sheet resistance >10 Mohm and an average reflectance >50%, the further layer would have a sheet resistance <1 Mohm if it had been applied onto the substrate with the same layer thickness by the further coating step (140), and the layer system consisting of the metal layer and the further layer has a sheet resistance >10 Mohm, where the invention furthermore relates to a layer system on a dielectric substrate in which a metal layer is applied onto the substrate by a coating step (110) and a further layer with a predetermined layer thickness is subsequently applied by a further coating step (140), the metal layer having a sheet resistance >10 Mohm and an average reflectance >50%, where the further layer, if it had been applied onto the substrate with the same layer thickness by the further coating step (140), would have a sheet resistance <1 Mohm, and the layer system consisting of the metal layer and the further layer has a sheet resistance >10 Mohm, the invention further providing a housing including a layer system.

A nitride semiconductor device is disclosed. The device includes a stack of semiconductor layers including the channel layer, the spacer layer, and the doped layer. The spacer layer is made of AlN while the doped layer is InAlN. A feature of the embodiment is that the spacer layer has a thickness of 0.5 to 1.25 nm.

In sophisticated semiconductor devices, resistors may be provided together with high-k metal gate electrode structures by using a polycrystalline silicon material without requiring a deterioration of the crystalline nature and thus conductivity of a conductive metal-containing cap material that is used in combination with the high-k dielectric gate material. In this manner, superior uniformity of the resistance values may be obtained, while at the same time reducing the overall process complexity.

A photovoltaic cell having a graded doped region such as a graded emitter and methods of making photovoltaic cells having graded doped regions such as a graded emitter are disclosed. Doping is adjusted across a surface to minimize resistive (I2R) power losses. The graded emitters provide a gradual change in sheet resistance over the entire distance between the lines. The graded emitter profile may have a lower sheet resistance near the metal lines and a higher sheet resistance farther from the metal line edges. The sheet resistance is graded such that the sheet resistance is lower where I2R power losses are highest due to current crowding. One advantage of graded emitters over selective emitters is improved efficiency. An additional advantage of graded emitters over selective emitters is improved ease of aligning metallization to the low sheet resistance regions.

A DSM variable high-gain circuit includes a differential amplifier and a negative feedback loop comprising low resistance poly resistors and switches configured in a T-structure having a junction point as part of the negative feedback loop. A third resistor branch of the T-structure includes a switch that connects the junction point through the third resistor branch to ground when in a closed state and that turns the third resistor branch into an open circuit when in an open state The switch of the third resistor branch, when in the closed state, produces a gain at the output of the variable high-gain circuit.

A transparent electrode material including a conductive layer having an active surface and a second surface, and an adjacent base layer, wherein: ∘ the conductive layer includes a conductive network formed by metallic nanowires and carbon nanotubes encapsulated in a conductive material; ∘ the second surface of the conductive layer has encapsulated nanowires and/or nanotubes projecting therefrom; and ∘ the encapsulated nanowires and/or nanotubes projecting from the second surface of the conductive layer are embedded in the adjacent base layer; whereby the active surface of the conductive layer is smooth and electrically active, and the transparent electrode material has a sheet resistance less than 50 Ω/sq and a transparency greater than 70%.

A semiconductor device is disclosed that includes a resistive element including a first resistor having a positive temperature coefficient and a second resistor having a negative temperature coefficient. The first resistor includes a metal film.

Multiple multi-stage delay circuits each have n (n is an integer) output terminals. The multi-stage delay circuits each apply delay times to a corresponding input signal, and output, via n output terminals, n delayed signals to which different delay times have been applied. Multiple inverters invert the respective input signals. The multiple multi-stage delay circuits and multiple inverters are alternately connected in the form of a ring.

The invention relates to a high-performance double-silver-layer low-radiation glass and a preparation method thereof. The high-performance double-ilver-layer low-radiation glass comprises a glass substrate and a first low surface resistance transparent conductive layer, a first silver layer, a first protective layer, a second low surface resistance transparent conductive layer, a second silver layer, a second protective layer, a third low surface resistance transparent conductive layer and a top protective layer which are successively form on the glass substrate. The high-performance double-silver-layer low-radiation glass, on the premise of better transmittance, also has increased heat insulation performance.

A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in². Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.

Disclosed herein is a detector including (i) a transversal optical sensor adapted to determine a transversal position of a light beam traveling from the object to the detector, wherein the transversal optical sensor has a photosensitive layer embedded between at least two conductive layers such that at least one of the conductive layers contains an at least partially transparent graphene layer on an at least partially transparent substrate, and wherein the transversal optical sensor generates a transversal sensor signal indicative of the transversal position of the light beam in the photosensitive layer, and (ii) an evaluation device designed to generate at least one item of information on a transversal position of the object by evaluating the at least one transversal sensor signal.

A decorative laminated sheet with excellent scratch resistance that is capable of adhering to a polyolefin-based resin substrate, and that is a hardly adhesive material, through an extrusion method, a vacuum-pressure molding method, a mold integrated injection molding method, and the like. The decorative laminated sheet includes a surface layer, a design layer, and an adhesive layer containing a polymer having a propylene unit of 85 mass % or more, in that order.

This invention relates to an apparatus (1) for treating, e.g. coating, a substrate (35, 39) in a vacuum chamber (2). In this vacuum chamber (2) there are arranged n cathodes (7-10) and n+1 anodes (28-32), each of said anodes adjacent to a cathode (7-10). Each of the n cathodes (7-10) and n of the assigned anodes (29-32) are connected to a power supply (11-14). One of the anodes (28) not being assigned to a cathode (7-10) is connected to an electrical line (63) which is connecting each of the anodes (28-32). A pull-down resistor (34) is connected to said line (63) at its one end and to ground (33) at its other end.

Methods of forming silicide layers of a semiconductor device are disclosed. A disclosed method comprises depositing a polysilicon layer, a buffer oxide layer, and a buffer nitride layer on a semiconductor substrate; forming a gate on the semiconductor substrate by removing some portion of the polysilicon layer, the buffer oxide layer, and the buffer nitride layer; forming sidewall spacers on the sidewalls of the gate; forming source and drain regions in the semiconductor substrate by performing an ion implantation process; forming a first silicide layer on the source and drain regions; depositing a first ILD layer over the semiconductor substrate including the gate and the first silicide layer; removing some portion of the first ILD layer to expose the top surface of the gate; and forming a second silicide layer on the gate.