32results about How to "Lower ohmic contact" patented technology

A semiconductor device according to the present invention includes a silicon carbide semiconductor substrate having a silicon carbide semiconductor layer; a p-type impurity region provided in the silicon carbide semiconductor layer and including a p-type impurity; a p-type ohmic electrode electrically connected to the p-type impurity region; an n-type impurity region provided in the silicon carbide semiconductor layer adjacent to the p-type impurity region, and including an n-type impurity; and an n-type ohmic electrode electrically connected to the n-type impurity region. The p-type ohmic electrode contains an alloy of nickel, aluminum, silicon and carbon, and the n-type ohmic electrode contains an alloy of titanium, silicon and carbon.

A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.

A method for manufacturing a semiconductor device having a MOS gate structure includes forming a device structure on a semiconductor substrate; forming an interlayer dielectric to cover the device structure; forming a contact hole through the interlayer dielectric; forming a transition metal film (e.g., Ni) on a portion of the semiconductor substrate exposed by the contact hole; (e) forming a metal film (e.g., Ti) on the entire surface of the semiconductor substrate; forming an oxide film in the surface of the metal film; selectively removing the metal film in which the oxide film has been formed, to thereby expose the transition metal film; and (h) exposing, to a hydrogen plasma atmosphere, the semiconductor substrate in which the transition metal film and the oxide film have been exposed, to thereby cause the transition metal film to generate heat and react with the semiconductor substrate and form an ohmic contact there between.

The invention provides a chip scale package light-emitting apparatus having recessed design and a manufacturing method thereof. The chip scale package light-emitting apparatus includes a flip chip type LED chip and a cladding structure. The cladding structure covers the LED chip, and has a bottom surface warps upwardly to for a recessed shape. The invention also provides a manufacturing method for manufacturing the light-emitting apparatus. The apparatus and the method can avoid or improve poor quality of welding points between the light-emitting apparatus and a substrate which is often caused by greater gap between an electrode group of the LED chip and a welding pad of the substrate due to expansion of the cladding structure upon being heated in reflow soldering or eutectic bonding. Therefore, the apparatus and the method can secure the electrode group to the substrate. With excellent welding quality, failure of electrical connection of the light-emitting apparatus can be avoided, the thermal resistance between the light-emitting apparatus and the substrate can be lowered, temperature at the binding point can be lowered when the light-emitting apparatus operates, and light-emitting efficiency and reliability can be improved.

The invention discloses a method for manufacturing a silicon solar cell. In the process of manufacturing a PN junction on a silicon wafer, a selective diffusion technology method is adopted, i,e. laser is utilized to heat a position, on which a positive electrode intends to be manufactured, on the surface of the silicon wafer; and under the action of heating, phosphorus in a phosphorus source uniformly adhered on the surface diffuses towards the inner of the silicon wafer, thus a heavy doping zone with smaller sheet resistance is formed at the position on which the positive electrode intends to be manufactured to effectively reduce the sheet resistance of the silicon solar cell, thereby not only being beneficial for increasing the open-circuit voltage of the silicon solar cell; the increase of the open-circuit voltage effectively improves the conversion efficiency of the silicon solar cell, reduces ohmic contact of a metal electrode and the silicon solar cell, thereby reducing the series resistance of the silicon solar cell, and being capable of meeting the demand of industrialized production better.

The invention relates to a high-temperature binder for a solar battery electrode and a preparation method thereof. The high-temperature binder for the solar battery electrode comprises a crystal material and an amorphous material, the amorphous material is a glass powder prepared from a mixture, and the mixture comprises the following components by the mass percentage: 20-50% of TeO2, 30-60% of PbX2, 1-20% of SiO2, 1-15% of P2O5, 1-25% of M2O3, 1-20% of NO, 0.1-10% of NH4NO3, 0.1-5% of Nb2O5, 0.1-5% of ZnF2, and 0.1-10% of R2O; the crystal material is selected from at least two of the group consisting of modified beta-spodumene, modified beta-cristobalite, modified cordierite, modified aluminum tungstate and modified titanium pyrophosphate. The high-temperature binder has relatively low thermal expansion coefficient.

The invention relates to an integrated GaN-based sensor and a manufacturing method for synchronously monitoring solution temperature and pH. The sensor is characterized in that it includes a substrate layer, a stress buffer layer, a GaN epitaxial layer, an AlGaN barrier layer, an ohmic contact electrode, a Schottky contact electrode and a packaging material layer arranged from bottom to top; the AlGaN barrier layer It includes a first protrusion, a first groove, a second protrusion and a second groove; the ohmic contact electrode is arranged on the surface of the first protrusion and the second protrusion; the Schottky contact electrode Deposition is disposed in the second groove. The sensor can maintain a high two-dimensional electron gas channel concentration while improving the detection sensitivity, so that the response speed is fast, and a Schottky diode is formed on the AlGaN / GaN by using the second groove anode structure to realize online monitoring of the detection solution temperature change.