37results about How to "Reduce shading rate" patented technology

The invention discloses a method for preparing metal electrodes of a crystal silicon solar cell, which comprises the steps that: after the PN junction is prepared on a p-type crystal silicon substrate through diffusion, a silicon nitride antireflection layer is prepared on the surface of a n type emitting electrode, then, a thin Al layer with the thickness being 100nm to 1000nm is prepared on thesurface of a p-type conducting back through the vacuum sputtering technology, the vapor deposition technology or the screen printing technology, in addition, a thin Ag grid line layer with the thickness being 1mum to 5mum is prepared on the surface of the silicon nitride antireflection layer through the screen printing, next, an Al back field seed layer and an Ag grid line seed layer are formed through the traditional high-temperature sintering technology, finally, tin, copper or nickel is electroplated on the Ag grid line seed layer and the Al back field seed layer through the electroplatingprocess, and the metal electrodes are formed after the thickening. Compared with the prior art, the method combines the advantages of the screen printing process, the magnetron sputtering process, the vapor deposition process and the electroplating process, front metal grid line electrodes with high electrical conductivity and low light shielding rate can be obtained, and simultaneously, the consumption of expensive metal Ag can be effectively reduced, so important industrialized application prospects are realized.

The invention discloses an OLED display panel, a manufacturing method of the OLED display panel and a display device, so as to simplify the process steps, improve the yield rate and improve the display efficiency. The OLED display panel includes a cover plate and a back plate arranged on the box, wherein: a plurality of color filter units are arranged in an array on the cover plate, and the gaps between each color filter unit are filled with auxiliary cathodes, the The auxiliary cathode includes a black matrix, a buffer layer, and a metal layer sequentially formed on the cover plate; a flat layer is formed on the auxiliary cathode and the color filter unit, and the flat layer has a plurality of openings corresponding to the auxiliary cathode; A plurality of spacers are formed on the flat layer corresponding to the auxiliary cathode, and the spacers are abutted and supported between the cover plate and the back plate; formed on the flat layer and the spacers The transparent electrode layer is connected to the auxiliary cathode through at least part of the openings; the color filter layer of the cover plate is opposite to the pixel area of ​​the back plate.

The invention belongs to the technical field of intelligent control, and in particular relates to an intelligent switch based on a LORA technology control panel, including a mounting base and a control panel, and a transparent protective cover is hinged on the side wall of the mounting base, and the transparent protective cover is a double The transparent protective cover is equipped with a light transmittance adjustment mechanism; the light transmittance adjustment mechanism includes an air cylinder fixedly connected to the inner bottom of the transparent protective cover, and the air cylinder is connected to the sealed interlayer. It is communicated through an air guide tube, and the gas cylinder and the sealing interlayer are filled with light-shielding gas. The invention can adjust the shading rate of the shading gas according to the brightness of the external sunlight, so that the display content on the control panel can be seen clearly during the day, and the indicating light emitted by the control panel can be prevented from affecting sleep and rest at night. Use the blower to blow air to the hands to avoid the problem of insensitive adjustment of the control panel due to the influence of moisture or sweat on the hands.

The invention discloses a method for manufacturing a vertical structure deep ultraviolet LED chip. Specifically: the p-GaN ohmic contact layer is processed into a grid structure by laser direct writing process, and a high-reflectivity p-type low-resistance ohmic contact Ni / Al electrode is used for ohmic contact with the p-GaN grid , forming a good ohmic contact. Then, the honeycomb structure is obtained by etching the groove array and the inner mirror groove array between the Ni / Al p electrode conductive layer and the n-AlGaN layer of the epitaxial layer, and the Al layer is deposited as a mirror in the inner mirror groove side walls, thereby obtaining a honeycomb internal reflector structure. By replacing the p-GaN layer in the traditional deep-UV LED with a grid-shaped transparent p-GaN layer and designing a honeycomb internal reflector structure, the emission of photons propagating laterally in the active layer of the LED is realized, reducing the amount of time in the deep-UV LED chip. The loss of the active area greatly improves the light extraction efficiency of the chip.

The invention discloses a method for cultivating environment-friendly and pollution-free leaf radishes, and belongs to the technical field of agricultural cultivation. The method includes 25-mesh white insect-proof net mulching; utilization of a black sunshade net; high-density seeding without thinning and three-time harvesting. The method has the advantages that pesticides can be omitted owing to 25-mesh white insect-free net mulching, so that the environment-friendly and pollution-free agricultural products can be produced; the germination rate and the emergence rate are increased owing to the sunshade net, and influence of scouring of rainstorms is relieved; owing to a process for high-density seeding without thinning and three-time harvesting, the acre yield is increased while the cost is saved, the frequency of supplying the products for markets is increased, duration of supplying the products for the markets is prolonged, and an acre benefit is increased; by the method for cultivating the environment-friendly and pollution-free leaf radishes, the acre benefit is increased by 600 yuan at least, and the method can be implemented easily and conveniently, is suitable for cultivating the leaf radishes, can be well received by production bases or growers and has an excellent popularization and application prospect.

The invention relates to a solar cell, in particular to a back contact heterojunction solar cell based on an N-type silicon chip. From the back features, it is divided into N-type region and P-type region. N-type region forms N+a-si / i-a-si / N-c-si / N+c-si heterojunction structure, and P-type region forms N+a-si / i-a-si / N-c-si / N+c-si / i-a-si / P-a-si heterojunction structure. The solar cell of the present invention does not appear the light-induced attenuation phenomenon of conventional P-type crystalline silicon solar cells, has better spectral response, and the thickness of the battery is greatly thinner than that of conventional crystalline silicon solar cells; The problem of shading the front electrode of the solar cell greatly improves the conversion efficiency of the solar cell; the low-temperature sintering process greatly simplifies the production process and reduces the production cost, which is suitable for industrial production.

The invention relates to a silicon solar battery piece which comprises a crystal silicon slice, a front face grid line and a back face electrode. The front face grid line is located on the illuminated face of a battery and comprises a main grid and a vice grid. The main grid comprises primary main grids and secondary main grids, wherein the number of the primary main grids is at least two, the primary main grids are mutually parallel, each primary main grid is divided into at least two sections, and the secondary main grids are connected at the positions of fractured openings of the primary main grids through regular or irregular shapes or lines. The vice grid comprises primary vice grids and secondary vice grids, wherein the primary vice grids are evenly distributed outside the shapes which are formed by the secondary main grids and are perpendicular to the primary main grids, and the secondary vice grids are located inside the shapes which are formed by the secondary main grids and are arranged parallel to the primary main grids. On one hand, direct contact of a main gate electrode and the silicon slice can be decreased, surface passivation area is enlarged, the illuminated area of the solar battery is increased, and the photoelectric conversion efficiency of the solar battery is effectively improved; and on the other hand, silver paste consumption in the manufacturing process can be effectively reduced, and production cost is lowered.