Back contact heterojunction solar battery based on N-type silicon slice

Abstract

The invention relates to a solar battery, in particular to a back contact heterojunction solar battery based on an N-type silicon slice. According to a back face feature, the back contact heterojunction solar battery is divided into an N-type region and a P-type region, wherein the N-type region forms an N+a-si / i-a-si / N-c-si / N+c-si heterojunction structure; and the P-type region forms an N+a-si / i-a-si / N-c-si / N+c-si / i-a-si / P-a-si heterojunction structure. In the solar battery, the light attenuation phenomenon of the conventional P-type crystal silicon solar battery can be avoided; the solar battery has higher spectral response; the thickness of the solar battery is greatly reduced compared with that of the conventional crystal silicon solar battery; electrodes are all printed on the back face of the battery, so the problem that the front electrode of the conventional solar battery blocks light is solved; therefore, the conversion efficiency of the solar battery is improved greatly; by a low-temperature sintering process, a production process is simplified greatly and production cost is reduced; and the solar battery is applicable to industrialized production.

Description

technical field [0001] The invention relates to a solar cell, in particular to a back contact heterojunction solar cell based on an N-type silicon wafer. Background technique [0002] In the 21st century, energy crisis and environmental pollution have become global problems that need to be solved urgently. The development of green energy has become the main method to solve the crisis. Among them, solar cells have become the goal of competing development of countries all over the world because of their cleanliness, safety and renewability. At present, the main development direction of solar cells is to reduce costs and increase efficiency. [0003] The heterojunction solar cell composed of new amorphous silicon and crystalline silicon has a simple structure and simple process. It combines the advantages of high carrier mobility of crystalline silicon with the advantages of low-temperature chemical vapor deposition of amorphous silicon technology, and has become the leading ...

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