Texture etching method for single crystalline silicon solar cell
A technology of solar cells and monocrystalline silicon, which is applied in the manufacture of circuits, electrical components, and final products. It can solve the problems of lower production efficiency and production capacity, difficulty in producing uniform suede, and increased defective rate. It is easy to operate, Suitable for large-scale production and low cost
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Embodiment 1
[0026] (1) Front chemical pre-cleaning
[0027] 0.5% Na by weight is configured in the ultrasonic tank of the ultrasonic cleaning machine 2 SiO 3 solution, and then put it into the [100] crystal silicon wafer, set Na 2 SiO 3 The temperature of the solution is 50° C., the ultrasonic frequency is 25 kHz, ultrasonic pre-cleaning is performed for 5 minutes, and then the silicon wafer is taken out and rinsed with pure water.
[0028] (2) Suede corrosion process
[0029] Rinse the [100] monocrystalline silicon wafer with pure water, and place it in the ultrasonic tank of an ultrasonic cleaning machine with a power of 1800w and a frequency of 25kHz. The ultrasonic tank of the ultrasonic cleaning machine is placed with 1% by weight A mixed aqueous solution of NaOH and 3% isopropanol by weight, the temperature of the mixed aqueous solution is 78°C, and the ultrasonic time is 30 minutes, then take out the monocrystalline silicon wafer and place it in a 10% aqueous hydrochloric acid ...
Embodiment 2
[0033] (1) Front chemical pre-cleaning
[0034] The concentration is 2wt% Na in the ultrasonic tank of the ultrasonic cleaning machine 2 SiO 3solution, and then placed in the crystal silicon wafer, set Na 2 SiO 3 The temperature of the solution is 50° C., the ultrasonic frequency is 40 kHz, ultrasonic pre-cleaning is performed for 10 min, and then the silicon wafer is taken out and rinsed with pure water.
[0035] (2) Suede corrosion process
[0036] Rinse the [100] crystalline silicon wafer with pure water and place it in the ultrasonic tank of an ultrasonic cleaning machine with a power of 2400w and a frequency of 40kHz. The ultrasonic tank of the ultrasonic cleaning machine is equipped with 2% by weight A mixed aqueous solution of NaOH and 6% isopropanol by weight, the temperature of the mixed aqueous solution is 85°C, and the ultrasonic time is 35 minutes, then take out the single crystal silicon wafer and place it in a 10% aqueous hydrochloric acid solution for 6 min...
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