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155results about How to "Rich texture effect" patented technology

Preparation method of aqueous two-component super wear-resistant lusterless paint

The invention relates to a preparation method of aqueous two-component super wear-resistant lusterless paint. The lusterless paint comprises an ingredient A and an ingredient B and a mole ratio of OH to NCO in the ingredients A and B is 1: 1.0-1.5. The ingredient A comprises a hydroxyl-containing aqueous resin, SMA resin, PMMA microspheres, aqueous color paste, auxiliary agents and water. The ingredient B is an aqueous polyurethane curing agent. A film of the aqueous two-component super wear-resistant lusterless paint has excellent high temperature resistance, super wear resistance, water resistance, weatherability and chemical stability. The preparation method improves paint surface texture, fullness, flexibility, smoothness and delustring effects and does not influence paint film texture and a brilliant degree. The aqueous two-component super wear-resistant lusterless paint has low VOC, does not contain heavy metals, is environmentally friendly, can be widely used for surface coating and protection of a base material with high temperature resistance, wear and scratch resistance and lusterless effect requirements and can be used for aqueous floor paint, aqueous high-grade woodenware paint, aqueous plastic cement paint, aqueous mobile phone paint and aqueous industrial paint.
Owner:UNION FOSHAN CHEM +1

Cleaning method of diamond wire cut silicon wafer

InactiveCN102294332AEfficient removalMeet surface requirementsCleaning using liquidsMetallurgySolar battery
The invention discloses a method for cleaning a silicon wafer linearly cut by a diamond. The method comprises the following steps of: putting the silicon wafer into an ultrasonic cleaning machine, and degumming; putting the degummed silicon wafer into pure water at the temperature of between 30 and 50 DEG C, and cleaning by using ultrasonic waves; putting the cleaned silicon wafer into a pure water tank which is filled with lactic acid at the temperature of between 60 and 80 DEG C, and cleaning to remove defective gum on the surface of the silicon wafer; putting the silicon wafer into a wafer insertion machine for wafer insertion; putting the silicon wafer into the pure water, and cleaning by using the ultrasonic waves; putting the silicon wafer into mixed solution of a silicon wafer cleaning agent, sodium hydroxide and water at the temperature of between 40 and 60 DEG C, and cleaning by using the ultrasonic waves; putting the silicon wafer into the pure water at the temperature of between 20 and 30 DEG C, and cleaning by using the ultrasonic waves; and putting the silicon wafer into a drying machine at the temperature of between 100 and 140 DEG C for drying. By the method, dirt on the surface of the silicon wafer can be effectively removed, and the requirement of the surface of the silicon wafer for a solar battery is met; and the silicon wafer linearly cut by the diamond is subjected to analogous wool making treatment, the wool making effect of a subsequent battery plate can be improved, and cleaning wastewater can reach the emission standard after being simply treated.
Owner:江西金葵能源科技有限公司

Texture etching method for single crystalline silicon solar cell

The invention discloses a preparation method of a monocrystalline silicon solar cell texture, the process is as follows: a monocrystalline silicon wafer which is rinsed cleanly by pure water after the chemical pre-cleaning in the former step is put in an ultrasonic tank of an ultrasonic cleaning machine with the power of 1,800-2,400w and the frequency of 25-40kHz, mixed water solution with 1 percent-2 percent NaOH and 3 percent-6 percent isopropyl alcohol according to the weight percentage is prepared in the ultrasonic tank, the temperature of the mixed water solution is set to be 75-85 DEG C, the ultrasound time is 30-35min, then the monocrystalline silicon wafer is taken out and put in hydrochloric acid water solution with the volume percentage of 10 percent for soaking for 4-6min, hydrofluoric acid water solution with the volume percentage of 10 percent is further used for soaking for 4-6min after the rinsing, then deionized water is used for cleaning, and drying is finally carried out. The silicon wafer texture prepared by the preparation method is even and low in reflection rate; furthermore, the preparation method reduces the fragmentation rate and improves the production efficiency and the production capacity.
Owner:NINGBO ULICA SOLAR SCIENCE & TECHNOLOGY CO LTD

Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method

The invention provides a monocrystalline silicon wafer texturing additive, a texturing solution and a corresponding texturing method. In the prior art, sodium silicate and the like are taken as monocrystalline silicon wafer texturing additives, a silicon wafer is bad in defoaming performance, and the defoaming effect can be guaranteed only by increasing the amount of a defoaming organic solvent, and thus the manufacturing cost is high and a pyramid texture surface is relatively large and not uniform in density at texturing later period. The monocrystalline silicon wafer texturing additive comprises terpilenol, polyglycol ether, lactic acid, sodium acetate and an alkali. The monocrystalline silicon wafer texturing solution comprises the above monocrystalline silicon wafer texturing additive and a texturing primary liquid, and the texturing primary liquid comprises an alkali, a defoaming organic solvent and deionized water. The monocrystalline silicon wafer texturing method comprises firstly providing the above monocrystalline silicon wafer texturing solution, controlling the texturing solution to have a constant temperature of 75-85 DEG C, placing a monocrystalline silicon wafer into the solution to make texture for 10-20 min, and finally using deionized water to clean the monocrystalline silicon wafer subjected to texturing. According to the technical scheme, the size of the pyramid texture surface can be effectively reduced, the technology stability and consistency are improved, the texture surface density is improved, and the production cost is reduced.
Owner:선테크파워컴퍼니리미티드 +1

Water-base fluorocarbon imitation marble paint, preparation method thereof and method for spraying with imitation marble effect

The invention discloses a water-base fluorocarbon imitation marble exterior wall paint, which comprises a white paint and more than one color paint, wherein the white paint comprises the following components in portion by weight: 12 to 20 portions of water-base fluorocarbon emulsion, 0.1 to 1 portion of cellulose, 0.1 to 1 portion of nano silicate, 0.1 to 1 portion of dispersing agent, 0.1 to 1 portion of pH conditioning agent, 0.1 to 1 portion of defoaming agent, 1.0 to 2.0 portions of film-forming agent, 1.0 to 2.5 portions of antiseptic mildew inhibitor, 1.0 to 2.0 portions of antifreezingagent, 10 to 12 portions of titanium pigment, 20 to 25 portions of calcium carbonate, 2.0 to 5.0 portions of barium sulfate, and 35 to 40 portions of water. The color paint is prepared by adding 0.01to 0.03 folds of color pigment paste on the basis of the white paint and stirring the mixture evenly. The invention also discloses a method for preparing the water-base fluorocarbon imitation marble exterior wall paint and a method for spraying an exterior wall with imitation marble effects by using the paint; and the water-base fluorocarbon imitation marble exterior wall paint keeps the same decorative effect as natural marbles, and simultaneously keeps the characteristics of consistent overall colors, energy saving, environmental protection, convenient construction and easy face lifting, andcan completely replace the natural marbles applied to the exterior wall and save two thirds of the cost at present.
Owner:珠海展辰新材料股份有限公司

Cleaning and wool making technology for monocrystal silicon chip

The invention relates to a cleaning and wool making technology for a monocrystal silicon chip, and belongs to the technical field of chemical engineering. The technology particularly comprises the following step: (1) adopting a self-made silicon chip cleaning agent to perform precleaning on the silicon chip; (2) putting the pre-cleaned silicon chip into a wool making trough; preparing a wool making liquid in the wool making trough, and adding 0.1 to 5% of sodium hydroxide, 0.1 to 3% of potassium hydroxide, 1 to 5% of isopropyl alcohol and 0.02 to 5% of a self-made wool making additive in percentage by weight into the wool making liquid; rising temperature until the reaction temperature is 70 DEG C to 90 DEG C to make wool; turning on ultrasonic equipment during the wool making process; (3) when the wool is prepared, closing the trough body; before the chip is cast, stirring by adopting a stirring device, wherein the wool making reaction time is 15 to 40 min. According to the invention, through the adoption of the cleaning agent and the wool making additive, the technology is controlled to be simple and stable, the energy consumption is reduced, and the capability of process control is enhanced, so that the control quality of the product in various aspects is greatly improved, the production cost in various aspects is reduced, and the comprehensive economic benefit is increased.
Owner:HENAN INST OF SCI & TECH

Rinsing fluid used for removing organics on surface of monocrystalline silicon piece and cleaning method

The invention discloses a rinsing fluid used for removing organics on the surface of a monocrystalline silicon piece and a cleaning method. The rinsing liquid comprises the following compositions in parts by volume: 2.30 parts-4.5 parts of hydrogen peroxide, 0.20 parts-1.15 parts of potassium hydroxide, and 94.35 parts-97.5 parts of pure water, wherein the mass fraction of potassium hydroxide is 45% and pure water is 18 M pure water. The cleaning method comprises the following steps: (1) flushing with tap water; (2) immersing in a lactic acid solution; (3) rinsing with tap water; (4) using pure water for ultrasonic pre-cleaning; (5) using a cleaning liquid for ultrasonic cleaning; (6) using pure water for ultrasonic rinsing; (7) using the rinsing fluid for rinsing; (8) using pure water for rinsing; and (9) performing dip coating and baking. The rinsing fluid and the cleaning are capable of effectively removing organics left on the surface of the monocrystalline silicon piece, improving the clean degree of the monocrystalline silicon piece surface, effectively reducing the cleaning unqualified rate of the monocrystalline silicon piece and the adverse ratio of the monocrystalline silicon piece subjected to etching, improving the quality of the monocrystalline silicon piece and enhancing the market competiveness of the product.
Owner:INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL

Production technology for T/R/H multielement functional fiber high textual quality yarn

The invention discloses a production technology for T/R/H multielement functional fiber high textual quality yarn. Heterotype cross-section Dacron, functional modified mucilage glue and Han jute fiber are selected as the raw materials or microporous modified dacron, functional modified mucilage glue and Han jute fiber are selected as the raw materials; the raw materials are prepared into clean, neat, puffy, soft, parallel and straight short fiber strands after going through opening and scutching, carding and edulcoration, combing and setting; then drawing decrement is carried out on the Heterotype cross-section dacron short fiber strands or microporous dacron short fiber strands; afterwards the drawing hybrid yarn principle is employed to enable the short fiber strands to be drawn with the functional modified mucilage glue and Han jute fiber; repeated drawing and gilling are performed to realize uniform blending of 3 functional fibers; the fiber strands after being blended and carded is processed into single yarn or plied yarn finished product yarn after going through processes of roving, spun yearn, spooling, doubling and wire twisting.The product of the invention features excellent conformality, bacterial resistance and moisture absorption and perspiration property, thus being an ideal new material of bionic function yarn.
Owner:SHAOXING UNIVERSITY

Texture surface making method for polycrystalline silicon solar battery

The invention relates to a texture surface making method for a polycrystalline silicon solar battery. A texture surface making aqueous solution comprises the following components in percentage by weight: 5-20% of hydrofluoric acid, 25-55% of nitric acid, 0.5-5% of silicofluoric acid, 0.1-0.5% of acetic acid, 0.5-1.5% of an additive and the balance of water, wherein the additive comprises the following components in percentage by weight: 0.2-0.8% of polyvinyl alcohol, 0.1-0.6% of triethanolamine, 1-6% of hydrolytic polymaleic anhydride, 0.05-0.1% of polyvinyl pyrrolidone and the balance of water, and the temperature of the texture surface making aqueous solution is 0-30 DEG C. The method comprises the following steps: putting silicon chips into the aqueous solution for 100-300s, performing ultrasonic vibration at the same time at an ultrasonic frequency of 40-60KHZ; and taking out the silicon chips, cleaning the silicon chips in a cleaning solution containing 0.2-0.5% of sodium hydroxide and 0.5-2% of sodium dodecyl benzene sulfonate, taking out the silicon chip and blow-drying. The method has the advantages of good stability, easily controllable temperature, good light-trapping effect on the surface of polycrystalline silicon, high photoelectric conversion rate of the battery, uniform texture surface and low reflectivity.
Owner:宁波乐丰新能源有限公司

Formula of composite texturing additive for preparing maize-shaped monocrystal silicon textured surface as well as use method of additive

The invention relates to a nonionic surfactant-containing additive of monocrystal silicon wafer texturing liquid. The additive comprises the following components: three nonionic surfactants such as polyethylene glycol (PEG), polyvinylpyrrolidone (PVP) and alkyl polysaccharide glycoside (APG), organic acid, inorganic salt and the balance of water. The invention also discloses a texturing method ofa monocrystal silicon wafer. The texturing method of the monocrystal silicon wafer comprises the following steps: 1) preparing a texturing additive; 2) preparing texturing liquid; 3) putting the monocrystal silicon wafer into the texturing liquid prepared in the step 2) and performing texturing at the texturing liquid temperature of 70 to 90 DEG C for 8 to 16 minutes; and 4) mixing the monocrystalsilicon wafer after texturing liquid with acid, cleaning with deionized water again and drying to obtain a product. The texturing effect is excellent; after texturing the texturing surface pyramids are arranged in a maize shape and the size distribution is 0.2 to 1.5 um; and reflection on light can be effectively reduced and the photoelectric conversion efficiency of a solar battery piece can besignificantly improved.
Owner:HUNAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Environment-friendly biological texture etch solution and application method thereof

The invention discloses an environment-friendly biological texture etch solution and an application method thereof, particularly relates to application of the texture etch solution to a solar single wafer during processing and manufacturing of a solar silicon wafer, and belongs to the technical field of preparation of a monocrystalline silicon solar cell. The application method is characterized by comprising the following steps of: adding a non-ionic surfactant, sodium citrate, anhydrous sodium carbonate and deionized water into a cleaned texture etch groove, stirring, and mixing uniformly toprepare the environment-friendly biological texture etch solution; heating the environment-friendly biological texture etch solution to between 75 and 85 DEG C; placing cut monocrystalline silicon wafers in the environment-friendly biological texture etch solution for etching reaction after the temperature is completely stable, wherein the reaction time is between 10 and 30 minutes; and taking the silicon wafers out after texture etching, placing the silicon wafers in an ultrasound tank which is filled with the deionized water, and rinsing for 5 to 15 minutes by ultrasound. The texture surface with fine, uniform and high-coverage rate pyramids can be obtained after the solar single wafer is subjected to texture etching through the texture etch solution, and the mass difference of the wafer before etching and after etching is between 0.1 and 1.0g.
Owner:SUZHOU CRYSTAL CLEAR CHEMICAL CO LTD
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