Cleaning method of diamond wire cut silicon wafer

Abstract

The invention discloses a method for cleaning a silicon wafer linearly cut by a diamond. The method comprises the following steps of: putting the silicon wafer into an ultrasonic cleaning machine, and degumming; putting the degummed silicon wafer into pure water at the temperature of between 30 and 50 DEG C, and cleaning by using ultrasonic waves; putting the cleaned silicon wafer into a pure water tank which is filled with lactic acid at the temperature of between 60 and 80 DEG C, and cleaning to remove defective gum on the surface of the silicon wafer; putting the silicon wafer into a wafer insertion machine for wafer insertion; putting the silicon wafer into the pure water, and cleaning by using the ultrasonic waves; putting the silicon wafer into mixed solution of a silicon wafer cleaning agent, sodium hydroxide and water at the temperature of between 40 and 60 DEG C, and cleaning by using the ultrasonic waves; putting the silicon wafer into the pure water at the temperature of between 20 and 30 DEG C, and cleaning by using the ultrasonic waves; and putting the silicon wafer into a drying machine at the temperature of between 100 and 140 DEG C for drying. By the method, dirt on the surface of the silicon wafer can be effectively removed, and the requirement of the surface of the silicon wafer for a solar battery is met; and the silicon wafer linearly cut by the diamond is subjected to analogous wool making treatment, the wool making effect of a subsequent battery plate can be improved, and cleaning wastewater can reach the emission standard after being simply treated.

Description

technical field [0001] The present invention relates to a silicon wafer cleaning method by diamond wire cutting. Background technique [0002] Silicon wafer cleaning refers to the process of removing contamination on the surface of silicon wafers by physical or chemical methods before oxidation, photolithography, epitaxy, diffusion, and wire evaporation to obtain a silicon wafer surface that meets the cleanliness requirements. Surface contamination of silicon wafers refers to the deposition of one or more of particles, metals, organic matter, moisture molecules and natural oxides on the surface of silicon wafers. The real surface of the silicon wafer is oxidized and adsorbed when exposed to the ambient atmosphere. The surface often has a thin natural oxide layer with a thickness of several angstroms, tens of angstroms or even hundreds of angstroms, and the natural oxide layer is closely related to the ambient atmosphere. The formed outer surface also has some surface ener...

AI Technical Summary

Problems solved by technology

[0003]First, a large amount of organic agents are used as cleaning fluid to remove the surface contamination of silicon wafers, which not only increases the cleaning cost, but also causes a large amount of water pollution, affecting COD in the surrounding environment; the second is that the process is more complicated. Generally, two processes of pre-cleaning and cleaning are required. After 6-7 tanks of pure water, organic cleaning agent, pure water, etc.