Special alkali texturing additive for diamond wire cutting single crystal silicon wafers, and using method of additive

A technology of diamond wire cutting and monocrystalline silicon wafers, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc. It can solve the problems of large amount of isopropanol, poor repeatability of texturing, long time of texturing, etc. , to achieve the effects of improving stability and consistency, shortening the time of making texture, and improving the residual line marks

Inactive Publication Date: 2018-06-08
宁波道乐新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its disadvantages are: long time for texturing, large and uneven texturing pyramid, high requirements for the surface state of the original silicon wafer, relatively large chemical consumption, short solution life, poor texturing repeatability, large amount of isopropanol, etc. question
In the actual field application process, there are problems such as high difficulty in operation, high defect rate of texture appearance, and low conversion efficiency of cells.

Method used

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  • Special alkali texturing additive for diamond wire cutting single crystal silicon wafers, and using method of additive
  • Special alkali texturing additive for diamond wire cutting single crystal silicon wafers, and using method of additive

Examples

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Embodiment 1

[0022] In the present embodiment, a method for making texturing of a monocrystalline silicon wafer is provided, and the following process steps are taken:

[0023] 1) Prepare additives: under stirring, dissolve 2.0g polyol, 1.0g polyvinyl alcohol, 0.1g anionic surfactant, 0.1g silicon-based defoamer and 1g sodium silicate in 95.8 g deionized water ( That is: in the prepared additives, the weight percentage of the polyhydric alcohol is 2%, the weight percentage of the polyvinyl alcohol is 1%, the anionic surfactant is 0.1%, the silicon-based 0.1% by weight of defoamer and 1% by weight of sodium silicate);

[0024] 2) Prepare alkaline texturing solution: under stirring, mix 2500g of sodium hydroxide and 100L of deionized water evenly, then add 1000ml of the above-mentioned additives, and stir evenly;

[0025] 3) Texturing: immerse the diamond wire-cut monocrystalline silicon wafer in the above alkali texturing solution for texturing, the texturing temperature is 82°C, and the t...

Embodiment 2

[0027] In the embodiment of the present invention, a method for making texturing of a monocrystalline silicon wafer is provided, and the following process steps are taken:

[0028] 1) Prepare additives: under stirring, dissolve 5.0g polyol, 0.5g polyvinyl alcohol, 0.05g anionic surfactant, 0.05g silicon-based defoamer and 3.0g sodium silicate in 91.4 g deionized water (That is: in the prepared additives, the weight percentage of the polyol is 5%, the weight percentage of the polyvinyl alcohol is 0.5%, the anionic surfactant is 0.05%, the silicon Base defoamer weight percentage content is 0.05% and sodium silicate weight percentage content is 3%);

[0029] 2) Prepare alkaline texturing solution: under stirring, mix 2500g of sodium hydroxide and 100 L of deionized water evenly, then add 1000ml of the above-mentioned additives, and stir evenly;

[0030] 3) Texturing: immerse the diamond wire-cut monocrystalline silicon wafer in the above alkali texturing solution for texturing, ...

Embodiment 3

[0032] In the embodiment of the present invention, a method for making texturing of a monocrystalline silicon wafer is provided, and the following process steps are taken:

[0033] 1) Prepare additives: under stirring, dissolve 3.0g polyol, 1.5g polyvinyl alcohol, 0.1g anionic surfactant, 0.1g silicon-based defoamer and 2.0g sodium silicate in 93.3 g deionized water (That is: in the prepared additives, the weight percentage of the polyhydric alcohol is 3%, the weight percentage of the polyvinyl alcohol is 1.5%, the anionic surfactant is 0.1%, the silicon Base defoamer weight percentage is 0.1% and sodium silicate weight percentage is 2%);

[0034] 2) Prepare alkaline texturing solution: under stirring, mix 2500g of sodium hydroxide and 100 L of deionized water evenly, then add 1000ml of the above-mentioned additives, and stir evenly;

[0035] 3) Texturing: immerse the diamond wire-cut monocrystalline silicon wafer in the above alkali texturing solution for texturing, the text...

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Abstract

The invention relates to a special alkali texturing additive for diamond wire cutting single crystal silicon wafers. The additive is prepared from the following components by weight percent: 0.5-5% ofpolyols, 0.2-2% of polyvinyl alcohol, 0.02-0.2% of an anionic surfactant, 0.01-1% of a water-soluble silicone-based antifoaming agent, 0.5-5% of sodium silicate and the balance of deionized water. After the additive provided by the invention is used for alkali texturing of the diamond wire cutting single crystal silicon wafers, the time for the alkali texturing is shortened, uniform, fine and dense pyramid texture can be obtained, a better texturing effect is still maintained at the later use period of texturing liquid, the stability and consistency of a texturing process are improved, and the problems of line mark residue of the single crystal silicon wafers and the like after texturing can be effectively solved. The additive is non-toxic, easy to implement and good in stability, thus having a very good practical application value.

Description

technical field [0001] The invention relates to an alkali-texturing additive special for diamond wire-cut monocrystalline silicon wafers and a method for using the same, belonging to the technical field of chemical additives. Background technique [0002] At present, the cutting of monocrystalline silicon wafers used in the photovoltaic industry mainly adopts diamond wire cutting technology. Because of its advantages of high cutting efficiency, low processing cost and low environmental pollution, it has attracted more and more attention and has gradually become the monocrystalline silicon slicing technology. mainstream and future development direction. [0003] Since the principle of diamond wire cutting is different from that of mortar wire cutting, in addition to irregular pits formed by brittle fractures on the surface of silicon wafers cut by diamond wire, there are also a large number of plastic smooth cutting marks and residual amorphous silicon on the surface. These ...

Claims

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Application Information

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IPC IPC(8): C30B33/10C30B29/06H01L31/18H01L31/0236
CPCC30B29/06C30B33/10H01L31/02363H01L31/1804Y02P70/50
Inventor 陈国涛夏庆锋郑庆刚
Owner 宁波道乐新材料科技有限公司
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