Rinsing fluid used for removing organics on surface of monocrystalline silicon piece and cleaning method
A single-crystal silicon wafer and rinsing liquid technology, which is applied in the directions of cleaning methods, cleaning methods and utensils using liquids, non-surface-active detergent compositions, etc. The problems of high cleaning failure rate and high proportion of defective monocrystalline silicon wafers can enhance market competitiveness, improve texturing effect, and improve cleanliness.
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Embodiment 1
[0021] Embodiment 1: A kind of rinsing solution for removing organic matter on the surface of a single crystal silicon wafer, which includes the following components by volume fraction: hydrogen peroxide: 2.30 parts; potassium hydroxide: 0.20 parts; pure water: 97.5 parts, wherein the hydrogen peroxide The mass percent of potassium hydroxide is 30%, the mass percent of the potassium hydroxide is 45%, and the pure water is 18M pure water.
Embodiment 2
[0022] Embodiment 2: A method for removing organic matter on the surface of a single crystal silicon wafer using the rinsing solution in Embodiment 1, comprising the following steps: (1) rinsing with tap water; (2) soaking in lactic acid solution; (3) rinsing with tap water; 4) Ultrasonic pre-cleaning with pure water; (5) ultrasonic cleaning with cleaning solution; (6) ultrasonic rinsing with pure water; (7) rinsing with rinse solution; (8) rinsing with pure water; (9) drying after lifting;
[0023] (1) Tap water rinsing: the monocrystalline silicon wafers after wire cutting and blanking are rinsed with tap water at normal temperature, and the rinsing time is 12 minutes, so as to achieve the purpose of removing most of the residual silica mud on the surface of the monocrystalline silicon wafers;
[0024] (2) Soaking in lactic acid solution: immerse the monocrystalline silicon wafer after being rinsed with tap water in a lactic acid solution with a concentration of 3% by volume,...
Embodiment 3
[0035] Embodiment 3: a kind of rinsing solution for removing organic matter on the surface of a single crystal silicon wafer, which includes the following components by volume fraction: hydrogen peroxide: 4.5 parts; potassium hydroxide: 1.15 parts; pure water: 94.35 parts, wherein the hydrogen peroxide The mass percent of potassium hydroxide is 30%, the mass percent of the potassium hydroxide is 45%, and the pure water is 18M pure water.
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