94results about How to "Reduce Fragmentation Rate" patented technology

The invention provides a preparation method of a silicon substrate and a heterojunction solar cell, and the preparation method of the silicon substrate comprises the steps: an initial silicon substrate comprises a first surface and a second surface, a first mask layer is formed on the first surface, and a second mask layer is formed on the second surface; performing first dot matrix laser etching treatment on the first mask layer to form a first intermediate mask layer; the second surface is provided with a target area, the target area is used for arranging a grid line, and second dot matrix laser etching processing is carried out on the second mask layer corresponding to the target area to form a second middle mask layer; performing alkali etching treatment on the first surface through the first intermediate mask layer, and performing alkali etching treatment on the target area through the second intermediate mask layer; and removing the first intermediate mask layer to obtain a first suede, and removing the second intermediate mask layer to obtain the silicon substrate with the target area as the second suede. The silicon substrate with excellent adhesiveness between the second surface and the grid lines and ultralow reflectivity on the first surface is prepared by using the method.

The utility model discloses visual inspection and bus bar welding equipment and a photovoltaic module production line, and belongs to the technical field of photovoltaic module production, the visual inspection and bus bar welding equipment comprises a conveying mechanism, a portal frame assembly, a welding mechanism and a detection mechanism, a battery piece and a welding strip of the photovoltaic module are visually detected through the camera module before welding, laser welding is carried out through the laser device after welding points of a bus bar are recognized and positioned, non-contact welding of the bus bar is achieved, the welding stability and welding precision of the photovoltaic module are effectively improved, and the welding quality of the photovoltaic module is improved. And the cracking rate of the photovoltaic module is reduced. According to the visual inspection and bus bar welding equipment and the photovoltaic module production line, the design is reasonable, visual inspection and bus bar welding are integrated in one procedure, an independent visual inspection or bus bar welding station does not need to be arranged, the equipment is simpler, and meanwhile the machining efficiency is improved.

The invention discloses a monocrystalline silicon alkali polishing additive with an inverted pyramid structure tower footing and application of the monocrystalline silicon alkali polishing additive. The monocrystalline silicon alkali polishing additive comprises, by mass, 1-2 parts of glue, 0.5-2 parts of sodium lignin sulfonate, 1-3 parts of quaternary ammonium salt, 0.1-0.3 part of sodium benzoate, 2-3 parts of DL-proline, 2-5 parts of other auxiliaries and the balance deionized water. By adding the additive disclosed by the invention into a polishing solution for alkali polishing of monocrystalline silicon, the reaction rate of a [111] / [100] surface can be changed, the reaction rate of a [110] surface can be increased, an inverted pyramid structure which is uniformly distributed and complete in structure can be formed on the back surface of the monocrystalline silicon, the roughness of the back surface of the monocrystalline silicon can be increased, on one hand, back slurry contact and slurry tension improvement are facilitated, and FF can be improved; and on the other hand, the double-sided rate of the photovoltaic module is improved, thereby improving the electrical performance of the battery piece.

The invention discloses a preparation method of a TOPCon solar cell. The preparation method comprises the following steps: S1, polishing the back surface of a silicon wafer; s2, depositing a tunneling oxide layer, a phosphorus-doped amorphous silicon layer and a mask layer on the back surface; s3, performing alkali texturing on the front surface; s4, depositing a tunneling oxide layer and an intrinsic amorphous silicon layer on the front side; s5, performing boron diffusion on the front surface, and synchronously crystallizing the phosphorus-doped amorphous silicon layer on the back surface to form a phosphorus-containing polycrystalline silicon layer; s6, carrying out laser crystallization; s7, removing the surface layer parts of the side surface BSG layer and the back surface mask layer; s8, removing the side boron diffusion layer, the front BSG layer and the residual mask layer; s9, double-sided film coating; and S10, carrying out silk-screen printing, sintering and light injection. According to the method, single-side texturing of the silicon wafer can be realized, and excessive internal expansion of phosphorus atoms caused by too high crystallization temperature can be avoided by matching low-temperature boron diffusion with laser crystallization. According to the method, the thickness of the silicon wafer is reduced slightly, the fragmentation rate of the silicon wafer in the preparation process is reduced, and the optical performance of the cell can be further improved.

The invention provides a battery piece pressing device, and relates to the technical field of photovoltaic cells, the battery piece pressing device comprises a carrier plate, a plurality of pressing assemblies arranged on the carrier plate, and a driving assembly matched with the pressing assemblies, the carrier plate is provided with at least one placing groove, the placing groove is used for placing a battery piece, and the plurality of pressing assemblies are arranged around the circumferential direction of the placing groove; the pressing assembly comprises at least one first connecting piece arranged on the carrier plate, a pressing needle connected with the first connecting piece and a second connecting piece arranged opposite to the pressing needle, one end of the pressing needle is rotationally connected with the carrier plate through the first connecting piece, and the other end of the pressing needle is located over the edge of the containing groove. The second connecting piece is matched with the pressing needle, so that the pressing needle presses and limits the battery piece; the driving assembly comprises a fixing frame and at least one driving piece, and the driving piece is used for relieving pressing and limiting of the pressing needle on the battery piece. The battery pieces are limited through the multiple pressing needles, the covering area of the battery pieces is obviously smaller, and the fragment rate of the battery pieces is reduced.

The invention discloses a wafer cutting method, and relates to the technical field of wafer cutting processing. The wafer comprises a front face and a back face which are oppositely arranged, the front face is provided with a plurality of chip function areas and cutting channel areas located between every two adjacent chip function areas, and the wafer cutting method comprises the steps that a front face protection film is attached to the front face of the wafer; carrying out thinning processing on the back surface of the wafer so that the wafer is thinned to a preset thickness; removing the protective film on the front surface, and pasting a through cutting film on the back surface of the wafer; performing laser grooving treatment on the front surface of the wafer corresponding to the cutting channel region; performing back laser transmission invisible cutting on the wafer subjected to the laser slotting treatment corresponding to the cutting channel region, so that the wafer is divided into a plurality of core particles; and stretching the through cutting film so as to enable two adjacent core particles in the wafer to generate an interval, and carrying out material taking treatment on the core particles. According to the method, the steps are few, the film reversing process from grooving to hidden cutting is omitted, the wafer cutting efficiency can be improved, the fragment rate is reduced, the number of core particles is increased, and the machining cost of a single core particle is reduced.

The invention discloses a stably suspended water-based diamond grinding fluid and a preparation method thereof. The grinding fluid comprises the following components in percentage by mass: 0.4-0.8% of diamond micro powder, 1-5% of a Gemini type polyether quaternary ammonium salt surfactant, 0.1-2% of a pH regulator, 1-6% of a suspending agent, 0.01-0.2% of a preservative, 20-60% of a solvent and 10-40% of deionized water, and the sum of the mass percentages is 100%. The water-based diamond grinding fluid is high in grinding rate, small in TTV and high in grinding material dispersion stability, has the advantage of being not prone to sedimentation compared with a traditional water-based diamond grinding fluid, is safer, more environmentally friendly and easy to clean compared with an oily grinding fluid, and can avoid quality and potential safety hazards caused by temperature rise due to long-time operation.

The utility model is suitable for the field of photovoltaic technology, and provides a photovoltaic solder strip, a photovoltaic assembly and a photovoltaic system. The photovoltaic welding strip comprises a welding strip body, a protruding structure and a groove structure. The convex structure is arranged on one side of the welding strip body and is arranged in a gap between two adjacent battery pieces of the photovoltaic module; the groove structure is formed on one side of the solder strip body and deviates from the convex structure, and the groove structure comprises a plurality of micro grooves. Thus, in the interconnection welding process of the photovoltaic welding strip and the battery piece, the protruding structure and the groove structure of the photovoltaic welding strip can release welding stress and relieve warping generated after the battery piece is welded, so that the subfissure rate and the fragment rate during lamination of the battery piece are reduced, and the reliability and attractiveness of a photovoltaic module product are improved. Meanwhile, the protruding structures and the groove structures can relieve the lamination stress of the photovoltaic welding strip, and the photovoltaic welding strip is prevented from arching.

The embodiment of the utility model provides a silicon wafer clamp and a porous silicon preparation device. The clamp body is provided with a first surface and a second surface which are parallel to each other and side faces located on the first surface and the second surface, the side faces are connected with the first surface and the second surface at the same time, and the clamp body is provided with a containing space penetrating through the first surface and the second surface; and the flexible tensioning piece is arranged in the accommodating space. According to the silicon wafer clamp, the fragment rate can be reduced while the full-area corrosion of the silicon wafer is realized.

The pneumatic clamping jaw comprises an upper cover and a shell arranged at the bottom of the upper cover, a sealing cavity is formed in the inner side between the upper cover and the shell, an air outlet is formed in the upper end of the upper cover, an air inlet is formed in the side face of the upper cover, a guide column is arranged at the bottom of the inner side of the shell, and the guide column is arranged in the sealing cavity. The outer side of the upper end of the guide column is movably sleeved with a piston cylinder, a first spring is vertically arranged on the inner side of the piston cylinder, and a chamfer is arranged on the edge of the bottom of the piston cylinder. According to the pneumatic clamping jaw of the single wafer cleaning equipment, through mutual cooperation of the air inlet, the air outlet, the fixing plate, the vertical arm, the limiting bottom block, the piston cylinder, the first spring, the guide column, the push rod, the second spring and the rolling wheel, clamping of wafers can be effectively achieved, and the pneumatic clamping jaw is simple in structure, convenient to manufacture and install, small in occupied space and capable of adapting to the wafers of different sizes.

The utility model provides a laser-induced sintering device for a BC battery. The laser-induced sintering device comprises a laser module, a bearing platform, a probe assembly and a power source. The bearing platform comprises an adsorption cavity, an adsorption part and an insulating plate, and the battery piece is adsorbed on the insulating plate; the probe assembly comprises a plurality of probes, the bearing platform is provided with a probe through hole penetrating up and down, and the probe through hole and the adsorption part are arranged in a staggered manner; when laser-induced sintering is conducted on the battery piece, the probe can penetrate through the probe via hole to make contact with the preset position of the battery piece, reverse voltage is applied to the battery piece through the power source, the laser module emits laser beams to enter the battery piece from the front face of the battery piece, the front face of the battery piece is prevented from being scratched, and high laser machining precision is achieved; and the upward total pressure F1 borne by the battery pieces is smaller than the downward total adsorption force F2 borne by the battery pieces, so that the battery pieces are prevented from being misplaced.

A folding screen electronic equipment front cover processing technology comprises the steps that a glass sheet is cut to obtain a glass sheet, the glass sheet is provided with a user face and a system face, and the system face is provided with a to-be-slotted area and a non-slotted area; a grinding machine thinning clamp is prepared, a vacuum air channel is formed in the grinding machine thinning clamp, the upper surface of the grinding machine thinning clamp is provided with a first adsorption area corresponding to the to-be-grooved area and provided with a plurality of adsorption holes communicating with the vacuum air channel and a second adsorption area corresponding to the non-grooved area and provided with an air groove communicating with the vacuum air channel, and the hole diameter of the adsorption holes is smaller than or equal to 2 mm; the air grooves are wider than the adsorption holes; fixing a grinding machine thinning clamp and clamping the glass sheet; mechanically thinning an area to be slotted on the glass sheet by adopting a grinding wheel; performing double-sided thinning on the mechanically thinned glass sheet by using NaOH; carrying out PVD (Physical Vapor Deposition) coating and primary hardening on the bending area of the glass sheet; and after the bent area is deplated, carrying out secondary hardening on the glass sheet to obtain the front cover of the folding screen electronic equipment.

The utility model relates to the technical field of semiconductors and photovoltaics, in particular to an adsorption device and carrying equipment, and solves the problem that the carrying efficiency and the equipment cost cannot be considered at the same time in the carrying equipment in the related technology. The adsorption device comprises a bearing assembly, a first driving assembly, a first adsorption assembly and a second adsorption assembly. The first adsorption assembly and the second adsorption assembly are both connected to the bearing assembly, and the bearing assembly can be installed at the tail end of a carrying manipulator, so that the first adsorption assembly and the second adsorption assembly are driven by the carrying manipulator to move so as to carry a pair of half sheets at the same time, the carrying efficiency is improved, and the labor intensity of workers is reduced. And the number of carrying manipulators is reduced, the carrying cost is reduced, and the carrying efficiency and the equipment cost are both considered. Besides, the first driving assembly drives the first adsorption assembly to reciprocate in the first direction, so that the first half sheet and the second half sheet in the pair of half sheets are placed in sequence, and the fragment probability is reduced.

This utility model provides an electroplating fixture, relating to the field of photovoltaic technology. The electroplating fixture includes a frame, a force-applying component, a first clamping component, a second clamping component, a spring, and at least one set of conductive clamps for energizing photovoltaic cells. Each set of conductive clamps includes two opposing conductive clamps, with the two clamps in the same set respectively mounted on the first clamping component and the second clamping component. The frame has opposing first and second plates. The first clamping component is mounted on the first plate, with one end of the spring mounted on the first clamping component and the other end on the second clamping component, and the spring located within the frame. The force-applying component is rotatably mounted on the second plate, with its end face within the frame abutting against the side of the second clamping component away from the spring. The end face sequentially has a first abutment surface, a transition surface, and a second abutment surface, wherein the distance between the first abutment surface and the first plate is greater than the distance between the second abutment surface and the first plate. This electroplating fixture can reduce the breakage rate of photovoltaic cells during electroplating.

The invention discloses a preparation method of a solar cell and the solar cell, and relates to the technical field of solar cells. The preparation method comprises the following steps: sequentially forming a functional layer and a seed layer on a textured surface of a silicon substrate; preparing a leveling layer on the seed layer; coating a photosensitive material on the leveling layer, and performing local exposure and development to form grooves arranged at intervals; preparing metal grid lines in the grooves; and removing the remaining photosensitive material after development and the leveling layer and the seed layer below the remaining photosensitive material. According to the embodiment, the smooth flat layer is prepared on the seed layer of the silicon substrate textured surface, so that the problem that residual glue is generated due to the fact that the seed layer with a pyramid structure is directly coated with a photosensitive material is avoided, and the bottom morphology of the metal grid line is improved.

The invention relates to the field of LED chip preparation methods, and particularly discloses a flip LED chip and a grinding method and a grinding system thereof. The grinding method comprises the steps that a wafer is loaded to a first carrier, the wafer comprises a first side and a second side which are opposite, a flip LED chip is arranged on the first side, metal protruding points are formed on the flip LED chip, and the second side of the wafer makes contact with the first carrier; waxing on the first side; during waxing, the first carrier is driven to be static for a first preset time and then rotate for a second preset time, so that wax is diffused on the first side, the cross sectional area of the diffused wax is smaller than that of the wafer, and a waxed wafer is obtained; loading the waxed wafer to a second carrier, and applying a preset pressure at a preset temperature, so that gaps between the metal bumps are filled with wax, the wax exceeds the outer edge of the wafer by a preset distance, and a to-be-ground wafer is obtained; and grinding the wafer to be ground. According to the invention, the fragment rate of the ground flip LED chip can be greatly reduced.

The embodiment of the utility model provides a lifting device and an ejector pin mechanism. The lifting device comprises a sleeve; the lifting needle is arranged on the axis in the sleeve; the electrostatic chuck is arranged in the sleeve and is perpendicular to the lifting needle, and the electrostatic chuck can move in the sleeve in the direction of the central axis; the at least three air pipes are arranged on the side wall of the sleeve and are sequentially arranged along the axis of the sleeve; and the at least one position sensor is arranged on the side wall of the sleeve. A plurality of air pipes are arranged in the needle lifting device, so that the lifting device can improve the capacity of the electrostatic chuck in a grading manner, and the electrostatic chuck is prevented from being directly lifted to the top end of the lifting device under the condition that the performance of the electrostatic chuck is unknown; therefore, wafer breakage caused by dislocation of the wafer on the electrostatic chuck due to incomplete static electricity removal of the electrostatic chuck is avoided, and the probability that the wafer deviates from the circle center and is broken is reduced.

The utility model discloses a photovoltaic cell string load disc, including bottom wall and setting in the two side walls of opposite side of bottom wall, bottom wall and two side wall form a along the first direction extension's storage part, the end of side wall has the inclined plane, the both sides of bottom wall both ends respectively are provided with the extension from bottom wall edge outward, be equipped with antiskid sleeve on extension department, the utility model discloses the end of side wall is provided with the inclined plane at the load disc, when the load disc is standing and placed, the side wall of load disc does not contact with ground, has reduced the risk of the deformation of side wall end, thereby has reduced the probability that the battery string appears hidden crack or fragment because of the deformation of load disc end, has improved the yield of battery piece, and the extension is provided with antiskid sleeve on the both sides of bottom wall both ends respectively, and the extension is wrapped with antiskid sleeve, and antiskid sleeve has the effect of buffering and antiskid, can prevent the load disc to slide down, makes the load disc stably place on the ground.

The application provides a limiting pin for a mechanical arm and the mechanical arm, and the limiting pin comprises: a base assembly, which is installed on the mechanical arm; and a limiting piece, which is connected to the base assembly. The side of the limiting piece used for contacting the wafer is an inclined surface, and the inclined surface is inclined towards the side away from the wafer, so as to contact the edge of the wafer and limit the wafer. The limiting pin of the application comprises the base assembly and the limiting piece. The side of the limiting piece used for contacting the wafer is designed as the inclined surface, and the inclined surface is inclined towards the side away from the wafer. When contacting the edge of the wafer, the wafer can be prevented from being stuck on the limiting pin and the abrasion of the limiting pin is reduced, so that the wafer is prevented from appearing the situations of wafer dragging and wafer breaking, the wafer breaking rate is reduced, and in addition, the maintenance cost of the equipment caused by wafer breaking is reduced.

The application provides a wafer correction system and a semiconductor process equipment, wherein the wafer correction system comprises: a wafer correction device, which comprises a bearing structure and a center correction mechanism, wherein the bearing structure is used for bearing a wafer, and the center correction mechanism is matched with the bearing structure to drive the bearing structure to move in a horizontal plane; a position detection device, which is used for detecting a first current position of the center of the wafer; and a controller, which is in communication connection with the position detection device and the center correction mechanism, has a first preset target position in the horizontal plane, and is used for controlling the center correction mechanism to act according to the first current position and the first preset target position, so as to drive the bearing structure to move to the center of the wafer coinciding with the first preset target position. The wafer correction system can at least correct the center position of the wafer, and can ensure that the center position of the wafer is uniquely determined after correction, so as to facilitate the positioning and grabbing of a subsequent mechanical hand and be beneficial to reducing the broken piece rate.

The invention relates to a method for improving SiC crystal ingot laser slicing surface roughness through laser annealing. The method comprises the following steps: firstly stripping a SiC wafer from a SiC crystal ingot in a laser stripping manner, then forming an annealing layer on the surface of the stripped SiC wafer by using laser, and finally pasting a UV film on the smooth surface of the annealed SiC wafer, and putting the annealed SiC wafer into a thinning machine for thinning, thereby completing the laser slicing of the SiC crystal ingot. According to the method for improving the surface roughness of the SiC crystal ingot laser slicing, the laser with the specific wavelength is utilized, the annealing layer is formed on the surface of the SiC wafer after stripping, the surface roughness of the SiC wafer is reduced, the strength of the surface area of the SiC wafer is reduced, disintegrating slag hidden in tool mark gaps of the SiC wafer after the SiC wafer is stripped can be reduced, and the service life of the SiC wafer is prolonged. The cost of the grinding wheel in subsequent thinning of the SiC wafer is reduced, and the cracking rate of the SiC wafer is also reduced.

The invention relates to a rotary caching mechanism which comprises a transverse frame, a lifting electric cylinder is arranged on the lower side of the transverse frame, the movable end of the lifting electric cylinder is connected with a sliding table, a rotating mechanism is arranged on the sliding table, a caching box is arranged on the rotating mechanism, and a correcting component and a blocking piece component are arranged on the caching box. The servo motor drives the first bevel gear to rotate, the second bevel gear is driven by the first bevel gear to rotate, the second bevel gear rotates through the driving shaft, the rotating table and the rotating disc, the rotating disc rotates the temporary storage mechanism full of the silicon wafers by 90 degrees through the supporting plate, and therefore the silicon wafers are converted into the vertical state from the horizontal state, and the silicon wafers in the vertical state are more convenient to clamp. The wafer breaking rate in the wafer taking process of the manipulator is greatly reduced, the silicon wafer production efficiency is greatly improved, the structure is simple, the cost is reduced, and subsequent manual operation is facilitated.

The invention discloses a preparation method of a positive and negative electrode insulation isolation layer of a solar cell. The preparation method comprises the following steps: S1, placing the back surface of a back contact solar cell on an ink-jet printing platform deck; s2, arranging an insulation isolation area in parallel on a metal auxiliary grid line on the back surface of the back contact solar cell and a welding contact area; carrying out insulation ink-jet printing in the insulation isolation area; and curing the solar cell after ink-jet printing of the insulation isolation area under an ultraviolet lamp. According to the invention, the graph is digitally printed, and the manufacturing time is shortened from several weeks to several hours; the film forming thickness of 1-50 microns can be realized through one-time ink-jet printing, and the problem of bubbles can be solved at the same time; precision of ink-jet printing graph capable of being controlled within range

The invention discloses a silicon wafer, a solar cell, a photovoltaic module and a processing method of the silicon wafer, which are used for ensuring the uniformity of the mechanical strength of the silicon wafer and reducing the fragment rate of the silicon wafer and the module end. At least one side of the silicon wafer is provided with a groove, the surface of the silicon wafer is provided with a plurality of cutting line marks, the cutting line marks extend along a group of opposite sides of the silicon wafer, and the groove is located on at least one side of the other group of opposite sides of the silicon wafer. According to the silicon wafer, stress superposition of the groove and the cutting line marks in the direction perpendicular to the edge where the groove is located is avoided, the pressure borne by the surface of the silicon wafer in the direction parallel to the edge where the groove is located is basically not affected by the groove, and therefore it is guaranteed that the overall mechanical strength uniformity of the silicon wafer is good; according to the invention, the fragmentation rate of the battery assembly end manufacturing process can be reduced, the stability and reliability of the assembly end are improved, the production cost is reduced, and the product quality and working safety are improved.

A forming method of a surface acoustic wave resonance device comprises the steps that an interdigital electrode structure is formed on the surface of a piezoelectric layer, and the interdigital electrode structure comprises a plurality of first electrode strips and a plurality of second electrode strips; a temperature compensation layer is formed on the piezoelectric layer, the temperature compensation layer covers the interdigital electrode structure, the temperature compensation layer comprises a first temperature compensation material layer, and the forming method of the temperature compensation layer comprises the following steps: forming the first temperature compensation material layer on the piezoelectric layer and the interdigital electrode structure by adopting a plasma enhanced chemical vapor deposition process, according to the plasma enhanced chemical vapor deposition process, tetraethoxysilane is adopted as a reaction source, the plasma enhanced chemical vapor deposition process has a first process temperature, and the first process temperature ranges from 270 DEG C to 400 DEG C, so that the uniformity and compactness of the temperature compensation layer are improved, the temperature coefficient of frequency (TCF) of the surface acoustic wave resonance device is improved, and the surface acoustic wave resonance effect is improved. And the working stability and reliability of the surface acoustic wave resonance device are improved.

The present invention belongs to the field of wafer polishing equipment, and specifically relates to a wafer edge polishing device and a polishing method. It includes a wafer fixing flip assembly, which includes a propulsion linear module and a machine base. A driven support seat is arranged beside the machine base. A swingable support arm is also arranged on the driven support seat. The support arm and the swing arm are arranged on both sides of the wafer rotating assembly to support the wafer rotating assembly. The wafer is arranged on the wafer rotating assembly. The polishing head driving assembly includes a base, a linear bearing mounting plate is arranged on the base, and a plurality of linear bearings are arranged on the linear bearing mounting plate. A guide shaft is arranged in each linear bearing. The upper end of the guide shaft is fixed to the upper connecting plate, and the lower end is fixed to the lower mounting plate. The polishing head assembly is arranged below the lower mounting plate through a shaft. The present invention prevents the polishing liquid from splashing everywhere, and greatly reduces the loss of the polishing liquid. The most important thing is that there will be no polishing liquid left on the surface of the wafer, which solves the problem of adsorption marks on the surface of the wafer.

The invention relates to the technical field of semiconductor detection, in particular to a bearing device for wafer detection of a water immersion type ultrasonic scanning microscope, which comprises a bearing table, an adsorption flow channel is arranged on the bearing table, a negative pressure flow channel is arranged in the bearing table, a negative pressure hole communicated with the adsorption flow channel is arranged on the bearing table, and a containing groove is arranged on the bearing table. A plurality of supporting tables used for supporting wafers are vertically fixed to the bottom of the containing groove, an adsorption flow channel is formed between the side wall of each supporting table and the containing groove, a soft annular sealing ring is arranged in the outer annular channel, the thickness of the sealing ring is not smaller than the height of the supporting tables, and a plurality of reducing claws located in the outer annular channel are evenly arranged on the bearing table in the circumferential direction. And the variable-diameter claw is slidably connected into the outer ring way in the radial direction of the containing groove and is connected with the sealing ring. And due to the sealing of the sealing ring, the residual detection liquid between the upper surface of the supporting table and the wafer is small, the adsorption force between the two is small, and the wafer is not easy to break when being taken down, so that the wafer breaking rate is reduced.

The invention relates to the technical field of semiconductors, and particularly discloses a semiconductor laser structure with cyclic strain buffer layers, which comprises an epitaxial structure layer and a substrate, a plurality of groups of strain buffer layers are arranged between the epitaxial structure layer and the substrate, each group of strain buffer layers comprises a strain layer and a buffer layer, the buffer layers are made of gallium arsenide, and the cyclic strain buffer layers are arranged between the epitaxial structure layer and the substrate. The material of the strain layer is Al < x > Ga < 1-x > In < y > P, xlt; 1, 0lt; yt; Yt; and 0.48, 3 to 50 groups of strain buffer layers are arranged. The laser epitaxial structure has the effect of improving the defect of serious warping caused by large pressure stress of the laser epitaxial structure.

The utility model relates to the technical field of crystalline silicon cell production and manufacturing, in particular to a novel chain type roller fragment structure which comprises a pressing rod and a connecting rod. A plurality of groups of connecting rods are mounted at the outer ends of the plurality of groups of pressing rods, the outer wall of one group of connecting rods is sleeved with an anti-pinch wheel, and cold air knives are mounted on the outer sides of the plurality of groups of pressing rods and the outer sides of the connecting rods. According to the utility model, the anti-pinch roller is used for supporting, the use of a water-driving roller is reduced, the direct contact area between the silicon wafer and the compression bar roller is reduced, the friction force and extrusion gravity generated by contact are reduced, the risk that the silicon wafer is broken due to external force in the transmission process is effectively reduced, and the surface quality of the silicon wafer is improved; production interruption and extra cleaning work caused by fragments are reduced; and the next roller in the rollers is changed into a cold air knife, nitrogen blowing is used for replacing mechanical extrusion water driving, high-speed and low-temperature airflow is provided, moisture on the surface of the silicon wafer can be quickly dried, and the production efficiency is improved.

The invention discloses a preparation method and application of a liver puncture tissue dissociation single-cell suspension. According to the invention, fresh trace liver puncture tissues are firstly cross-linked and fixed by using DTSSP, and then are stored and transported in a Meitenyi assembly protective solution, so that the problem of too low cell viability caused by excessive death of fragile parenchymal liver cells in the storage process is obviously improved; the tissue stability of the primary liver puncture tissue in the storage or transportation period is remarkably improved, the time required for dissociation is shortened, and the common defects of small cell number, low cell viability, high mitochondrial gene expression, cell type preference and the like in the traditional liver puncture tissue single cell sequencing are remarkably improved. The method can be applied to single cell sequencing, liver primary cell dissociation and the like. The method has a wide application prospect.