91 results about "Through-hole technology" patented technology

The invention provides a miniaturized MEMS switch-line phase shifter, comprising an MEMS switch, a reference phase shifting transmission line, a phase delay transmission line, a switch offset line, a back surface grounding layer, a medium liner, a microwave grounding terminal, and a micro-mechanical through hole. The invention has the advantages of keeping low insertion loss of a transmission passage and reducing the chip area of a large phase shifting unit bit transmission line of the phase shifter by distribution-typed elements with high resistance and a phase delay transmission network formed by the microwave grounding of a collecting element and the micro-mechanical through hole, reducing the chip area of a small phase shifting unit bit delay line of the phase shifter, reducing the area of the chip, minimizing the chip area occupied by the MEME switch by selecting miniaturized MEMS switches such as a built-in cantilever MEMS switch, keeping the broad band performance of the MEMS switch and the phase shifter and minimizing the chip area occupied by the MEMS switch offset circuit by separating a microwave signal from a switch driving signal, and leading to simple and convenient design of microwave grounding of the chip and reducing the area of the chip to the most extent by the micro-mechanical through hole technology.

The invention discloses an LED (light emitting diode) two-dimensional array light source with a flexible circuit substrate. The LED two-dimensional array light source comprises a plurality of LED chips or packaged LED light beads. The LED two-dimensional array light source is characterized by also comprising the flexible circuit substrate, wherein the flexible circuit substrate is provided with an electric conducting material with electric conducting patterns; solder mask layers are printed on the flexible circuit substrate to form a plurality of binding regions; the LED chips or the light beads are directly pasted on the binding regions, and are connected and conducted mutually through the electric conducting patterns; and array-type through holes are formed on the flexible circuit substrate. The invention provides the LED two-dimensional array light source with the flexible circuit substrate, a curve surface LED array light source type is solved, at the same time, the LED light source heat radiation effect is improved by the flexible circuit substrate and an array-type through-hole technology, thus the heat radiation capability and light dipping efficiency of a luminous light source are improved greatly, the service life is prolonged, the LED two-dimensional array light source with the flexible circuit substrate is more suitable for automatic production so as to be used by public consumers.

The invention relates to a vertical-type capacitor structure and a manufacturing method of the vertical-type capacitor structure, and belongs to the technical field of micro-electronic passive devices. The vertical-type capacitor structure structurally and specifically comprises a deep-groove structure, insulating layers, conducting layers and a dielectric layer, wherein the deep-groove structure is located inside a wafer substrate, the insulating layers and the conducting layers are sequentially deposited on the inner side wall of a deep groove, and the dielectric layer is filled between the conducting layers. The insulating layers, the conducting layers, the dielectric layer and the deep groove are the same in height. On the basis of the principle that the area of a capacitor is expanded in the direction perpendicular to the substrate, the area of an plate electrode in the perpendicular direction is utilized, the processes such as sputtering and electroplating are adopted to manufacture a metal plate electrode, and the plate electrode is made of low electrical resistivity materials, like metal. With the combination of a silicon through hole technology, the vertical-type capacitor with a large depth-to-width ratio is achieved. With the combination of a substrate back thinning technology, the vertical-type capacitor structure penetrates through the substrate, the vertical-type capacitor structure can be used as a high-frequency channel between multi-layer chips, the area of the plate can be greatly saved, and the integration level of an integrated circuit is improved.

The invention discloses a process for assembling a radio frequency power amplifier circuit board, which comprises the following steps: designing a steel mesh template, a printing assembly, a pressing assembly and a copper plate positioning assembly in order to meet the chip-mounting production; before performing the chip-mounting, roasting the tide sensitive devices such as a power amplifier tube and a PCB (printed circuit board) circuit board according to the tide sensitive control rule; brushing solder paste on the back side of the PCB while brushing solder paste (containing the solder paste used for soldering the power amplifier tube ) on the PCB and copper plate through the assembly; using a chip-mounting machine to mount the chip on the surface chip-mounting devices (including mounting on the power amplifier tube); manually inserting a THT (through hole technology) connector on the PCB circuit board mounted with the device; and lastly loading the PCB and the copper plate into an assembly backflow furnace. By using the process for assembling a radio frequency power amplifier circuit board provided by the invention, the excellent power amplifier radio frequency radiation and grounding properties are ensured, the reliability and the service life of the power amplifier are increased, and the product cost is lowered by adding the copper plate in the last stage.

An integrated circuit (IC) socket assembly (1) includes an insulative housing (11), a holding component (12) and a multiplicity of electrical terminals (13). Each of the terminals includes a head portion (135) forming a first contact portion (131) at a free end thereof for electrically contacting an IC (2), a holding portion (133) engaging the terminal in the holding component, and a second contact portion (132) for electrically contacting a burn-in board (3) by Through Hole technology. Some of the terminals further include connecting portions (134) each bending from ends of the holding portions to ends of the second contact portions. Each of the connecting portions has a desired length in a horizontal direction, to decreases the difficulty of making the holes in the burn-in board and assembling the second contact portions into the burn-in board by Through Hole technology.

The invention discloses a flip LED packaging structure and a manufacturing method. The electrode surface of the LED flip chip in the packaging structure is coated or not coated with an upper surrounding layer, and the electrode of the LED flip chip is connected with a solder convex block; the light-emitting surface and each side surface of the LED flip chip are embedded in a lower surrounding layer in a multilayer or two-layer or a single-layer structure and a peripheral surrounding layer; the peripheral surrounding layer is used for adjusting function applications of the chip or enhancing the mechanical strength of the chip, the lower surrounding layer is used for adjusting the color of the emitted light and enhancing the mechanical strength of the chip, and the electrode is connected with an external device via the solder convex block. Structures such as a silicon substrate or a silicon through hole are saved, technological advantages that the structure is simple, the thickness is thin, the mechanical strength is good, the packaging size is small and the like are provided, the light emitting surface and the light emitting color can be changed, the light emitting rate is improved, and function applications of the chip are multiple. According to the manufacturing method, the flip technology and the wafer level packaging technology are adopted, the silicon through hole technology is avoided during the manufacturing process, the process is simple, and the packaging cost is lower.

The invention provides a method for forming seed crystal layers in a silicon through hole technology. The method comprises the steps that a first-time seed crystal layer deposition process is conducted in a silicon through hole, and first seed crystal layers are formed in the silicon through hole and on the outer surface of the top of the silicon through hole; a backflow process is conducted on the first seed crystal layers, and the first seed crystal layers with the smooth surfaces are formed; a second-time seed crystal layer deposition process is conducted in the silicon through hole, and second seed crystal layers are formed on the surfaces of the first seed crystal layers. Due to the fact that the prepared seed crystal layers are provided with the smooth surfaces, advantageous conditions are provided for the subsequent copper electroplating, the detect that holes are generated inside the padded copper is effectively overcome, the technological quality of copper electroplating is improved, and the reliability of the silicon through hole is ensured.

The invention provides an integrated micro pressure flow sensor based on silicon through-hole technology. The flow sensor consists of an MEMS (Micro-electromechanical System) pressure sensor, an MEMS flow sensor, an ASIC (Application Specific Integrated Circuit) sensor signal modulation chip, interconnected through holes and salient points, wherein the MEMS pressure sensor, the MEMS flow sensor and the ASIC sensor signal modulation chip are vertically stacked sequentially and are in electrical connection through the interconnected through holes and the salient points; and the ASIC sensor signal modulation chip carries out signal modulation on the MEMS pressure sensor and the MEMS flow sensor. The flow sensor has the advantages that with the adoption of the silicon through-hole technical process, the packaging size of the sensor is reduced greatly, the packaging cost is reduced, and the application range of the pressure sensor and the flow sensor is enlarged.

The invention discloses a jump layer transmission line based on artificial surface plasma polaritons. The jump layer transmission line comprises a dielectric substrate, a first metal strip and a second metal strip which are arranged at the two sides of the dielectric substrate, and a metalized through hole which penetrates through the dielectric substrate and is connected with the tail ends of the first metal strip and the second metal strip so as to connect the metal strips from one side of the dielectric substrate to the other side. The first metal strip and the second metal strip are formed by periodic slot units. Interlayer high-efficiency transmission of multiple layers in broadband bandwidth can be realized through a metal through hole technology, and the jump layer transmission line also has the characteristics of being easy to manufacture and convenient to process, and low in crosstalk and high in efficiency. The single-layer transmission line structure can be applied to a limitless thin dielectric substrate so that the characteristics of ultrathin ultralow loss transmission can be realized. Meanwhile, the two transmission lines are not sensitive to deformation of the dielectric substrate and can be attached to a spherical surface, a conical surface and other uneven dielectric substrate surfaces so as to form a conformal device and a circuit system.

The invention provides a method for manufacturing an LED with vertical type through holes. Before the N electrode and the P electrode are formed, the through hole technology is adopted, the through holes are formed in a bonding substrate, a connecting layer and an epitaxial layer, N-GaN or transparent conducting thin film is exposed out through the through holes, then passivation layers are formed on the lateral walls of the through holes and the partial surface of the bonding substrate, the N electrode is formed in the through holes and the surfaces of the passivation layers, the P electrode is formed on the bonding substrate, the N electrode is connected with the N-GaN or the transparent conducting thin film, the N electrode is accordingly led out from the bonding substrate through the through holes, blocking of the N electrode on emitted light of the light emitting face is reduced, and the external quantum efficiency is improved; meanwhile, the N electrode is formed on the surface of the bonding substrate, then the reflow soldering packaging mode is adopted, and packaging with the routing process is not needed, so that damage of routing to the epitaxial layer is avoided, and the cost of gold wires for the packaging process is reduced.

The invention discloses a rework method for a dual damascene through-hole technology. The method comprises the following steps that 1, a through hole of the damascene runs through a first low K dielectric layer, a second DARC layer is formed on the first low K dielectric layer, and a graphical third metal hard mask layer is formed on the surface of the second DARC layer; the second DARC layer withthe third metal hard mask layer is coated with a coating-based three-layer structure which is formed by overlaying an ODL layer, an SHB layer and a PR layer and used for defining the through hole; 2,lithography development of the through hole is performed; 3, detection is preformed after development is performed, after development is performed, when detection is out of the range, the rework technology of removing the three-layer structure is performed; in the rework technology, the PR layer, the SHB layer and the ODL layer are removed by adopting a dry etching technology and sequentially removed in the same dry etching equipment. Accordingly, the steps of the rework technology can be reduced, and the rework efficiency and quality are improved.

The embodiment of the invention provides a receiving device based on a waveguide balance detector and an integration method thereof, and the device comprises: an integrated silicon optical chip whichis used for receiving space signal light and local oscillation light, and obtaining a group of differential optical current signals through photoelectric conversion; a reading circuit chip which is used for converting the differential optical current signal into a digital voltage signal; and an integrated silicon optical chip which comprises a passive silicon optical device and an active waveguidebalance detector, wherein the integrated silicon optical chip and the readout circuit chip are interconnected and integrated in a three-dimensional stacking mode through silicon through holes. The receiving device based on the waveguide balance detector has the advantages of being high in integration degree, high in detection sensitivity, high in signal-to-noise ratio, capable of being expanded to a large view field and the like, three-dimensional integration of the integrated silicon optical chip and the CMOS integrated reading circuit chip is achieved through the silicon through hole technology, the size is small, the structure is simple, optical loss is small, and adjustment difficulty is low.

The invention discloses a Wilkinson power divider based on a glass through hole technology. The Wilkinson power divider comprises a parallel plate condenser unit, a rewiring layer, three-dimensional solenoid inductor units and an isolating resistor; the power divider is composed of a reactance network consisting of lumped parameter elements, the three-dimensional solenoid inductor units and the parallel plate condenser unit which are compact in structure and low in loss are adopted, solenoid inductors passing through a glass substrate are taken as the lumped parameter elements of the power divider, the solenoid inductors take full advantage of the characteristics of glass through hole vertical arrangement and low electric loss, the power divider is small in area, large in inductance valueand low in loss, and the dimensions of the power divider are greatly decreased; the volume of the power divider is greatly reduced, and the performance of the power divider is guaranteed while the integration level of the circuit is improved. According to the power divider disclosed by the invention, input signal power can be halved into two output ports, the power divider has the advantages of low power loss, high port isolation, small phase difference, compact dimensions and the like, and the power divider is particularly applicable for micro three-dimensional heterogeneous integration packaging.

What is disclosed is a plug-in connector in through-hole technology that is suited for the surface soldering technique. The plug-in connector includes an insulating carrier part wherein a multiplicity of wafers each having soldering tags and contact terminals are inserted. In accordance with the invention, the wafers are placed at a distance from each other, whereby flow channels for supplying the heat transport medium, e.g. air, are created. In an advantageous alternative or additional development of the invention, there is formed in the range of the feedthrough a flow space permitting a flow of the heat transport medium perpendicularly to the plane of the platelets. This passage may be formed by a recess of the insulating material or by suitable spacer elements.

The invention provides a temperature difference type wind speed sensor which comprises the components of a ceramic substrate, a heating element which is configured on the ceramic substrate, at least two sets of temperature sensing elements which are configured on the front surface of the ceramic substrate and are arranged around the heating element in a central symmetry manner, and at least two sets of temperature measuring elements which are configured on the back surface of the ceramic substrate and correspond with the positions of the temperature sensing elements. Furthermore the heating element is configured on the back surface of the ceramic substrate and performs heating through application of DC power. The temperature sensing elements are metal blocks, and the temperature measuring elements are inductance coils. The invention further discloses a preparation method of the temperature difference type wind speed sensor, and a wind speed detecting method based on the temperature difference type wind speed sensor. The temperature difference type wind speed sensor with the structure has advantages of realizing wind speed detection for positive-direction wind, improving sensitivity of the wind speed sensor, reducing power consumption, preventing wire bonding technology and substrate through hole technology, and realizing low cost and easy industrial production.

The invention discloses a thermal loss type air velocity sensor which comprises an insulating substrate, a heating inductive coil and a radiation inductive coil, wherein the heating inductive coil is arranged on the back side of the insulating substrate, and the radiation inductive coil is arranged on the front side of the insulating substrate and is right opposite to the position of the heating inductive coil; a silicon dioxide layer is arranged on the front side of the insulating substrate, and two end terminals of the heating inductive coil are connected in the silicon dioxide thin layer so as to form a closed loop circuit. At the same time, the invention further discloses a preparation method of the thermal loss type air velocity sensor and an air velocity detection method based on the thermal loss type air velocity sensor. Front side air sensing is realized, the sensitivity of the air velocity sensor is improved, and power consumption of the air velocity sensor is reduced; the lead problem is solved by the interreaction of the inductive coils on the front side and the back side, front side wireless heating and wireless temperature measuring are realized, and the bonding wire technology and the substrate through-hole technology are avoided.