AlGaInP-based light emitting diode and manufacturing method therefor

Abstract

The invention provides an AlGaInP-based light emitting diode and a manufacturing method therefor, wherein a P electrode adopts a through hole technology; equivalently, a P electrode through hole for running through an epitaxial layer is formed in a direction perpendicular to the direction of the plane where the epitaxial layer is located, to enable the P electrode main body to be partially locatedin an n type epitaxial layer; and the P electrode and an N electrode are manufactured, and then the P electrode and the N electrode are kept in the same height. The problem of increasing of the packaging difficulty caused by easy side tilting of an LED chip in chip packaging and bonding due to relatively high height difference existing between the P electrode and the N electrode in the existing LED can be solved; in addition, an isolation trench is also formed in the LED on the above basis, so that the problem of easy electric leakage between the P / N electrodes caused by extrusion and deformation of soldering flux in the existing LED packaging and bonding process also can be solved; and in addition, an ODR reflector mirror structure comprises an ODR reflector mirror dielectric film layerand an ODR reflector mirror metal layer, so that high reflection efficiency is realized.

Description

technical field [0001] The invention relates to the technical field of LEDs, and more specifically relates to an AlGaInP-based light-emitting diode and a manufacturing method thereof. Background technique [0002] With its many advantages, LED is developing rapidly. Such as figure 1 as shown, figure 1 It is a schematic structural diagram of a commonly used flip-chip AlGaInP-based LED based on a transparent substrate. The manufacturing process of the LED is as follows: [0003] First, AlGaInP epitaxial wafers are grown on a GaAs substrate, then the surface of the epitaxial wafers is roughened, and the epitaxial wafers are bonded to the transparent substrate 101 by using BCB, and then the GaAs substrate is removed (the GaAs substrate is used as a temporary substrate bottom), and etch out a P-type AlGaInP mesa 102, wherein a transparent bonding layer 103 is provided between the P-type AlGaInP mesa 102 and the transparent substrate 101, and a P-type AlGaInP mesa 102 and an N-...

AI Technical Summary

Problems solved by technology

[0004] However, the inventors found that there is a large height difference between the P electrode and the N electrode in the LED manufactured by the current manufacturing process. When the chip is packaged and bonded, the LED chip is prone to tilting, which increases the difficulty of packaging.

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