64results about How to "Solve pressure" patented technology

The invention discloses a novel electric power electric transformer. The electric power electric transformer consists of a high-voltage level, an isolation level and a low-voltage level, wherein the high-voltage level comprises 2*N*n half-bridge topology first power modules; the isolation level consists of N1 second level power modules, and each second power module comprises a medium high frequency wave chopper part, a medium high frequency transformer part and a medium high frequency synchronous rectifier part; and the low-voltage level consists of N2 level third power modules. The electric power electric transformer skillfully utilizes the prior half-bridge topology structure technique, better solves the problems of low operating efficiency, voltage resistance and voltage sharing of switch devices on the input side and big volume of an input filter existing in the common electric power electric transformer, and simultaneously realizes reactive power control of the high-voltage level and the low-voltage level, quality control of electric energy and limitation of failure current, improves the practicability of the device and quickens commercialization of the electric power electric transformer.

The invention relates to polymerization of 1-butene, in particular to a spherical catalyst of polybutylene-1. The catalyst consists of a carrier, an active component and a modifier, wherein the active component is titanium tetrachloride, the carrier is a magnesium chloride spherical carrier and the modifier is an electron donor compound; and the catalyst comprises the major components in percentage by mass of: 1.1-4.5% of Ti and 0.15-12.37% of electron donors. The spherical catalyst suitable for butane-1 polymerization solves the problems that the activity of the general catalyst is low, the normality of polymer is difficult to control, and the molecular weight of the polymer and the molecular weight distribution are difficult to control. The obtained polybutylene polymer has very high steric regularity, the normality of polybutylene is as high as 99%, the crystallinity of the polybutylene-1 polymer is greater than 60% and the fusion point is 130.5 DEG C. The invention can simplify the polymerizing process and save the production cost.

The invention discloses a full depth buoyancy regulating seawater pump, which mainly comprises a flat valve module, a plunger piston shoe module, a plunger sleeve, a force transfer and reset mechanism and a pressure compensator, wherein the pressure compensator is used for balancing a lubricating cavity and environmental stress; the force transfer and reset mechanism drives the plunger piston shoe module to alternately cycle for a pressing travel and a sucking travel, so that the flat valve module alternately cyclically sucks water and presses water; the plunger piston shoe module has a fixed interval forced reset structure, so that a plunger is reset reliably; the force transfer and reset mechanism has a bidirectional stress structural design, so that the seawater pump meets the special working condition of regulating the buoyancy by the hydraulic pressure of seawater; and a stepped plunger is adopted, large and small plungers are connected through a spherical hinge, and the problems of strength design, sealing and frictional wear of the crucial friction pair, namely an ultrahigh pressure seawater pump are solved. The full depth buoyancy regulating seawater pump can regulate the buoyancy of a submersible in sea areas with all depth, and has the characteristics of simple structure, high applicability and working reliability.

The invention relates to a special high-strength wear-resistant sealing ring of a high pressure resistant self-sealing rotary compensator, comprising a circular supporting body (1) and graphite sealing layers (2) respectively fixed on both end surfaces of the circular supporting body (1). The invention has the advantages of simple structure, good pressure-resistant performance and wide range of application and is particularly suitable for sealing high-pressure movable surfaces.

The invention discloses a gate drive circuit without static power consumption, and belongs to the technical field of electronic circuits. A floating power supply ground module is used for generating afloating power supply ground signal and a high side reset signal, wherein a low voltage-high voltage level shifting module is used for shifting a low voltage driving signal of a front stage to a highvoltage side to control a high side power transistor; a high voltage-low voltage level shifting module is used for feeding back a high side signal of the floating power supply to a low side, and closing an input stage in the low voltage-high voltage level shift module through a logic control module to ensure that the gate drive circuit provided by the invention is free from static power consumption; and a drive output module drives the high side power transistor and a low side power transistor respectively by using the high side drive output unit and the low side drive output unit, and the logic control module provides logic control. The gate drive circuit is free from static power consumption, and meanwhile the problem of voltage resistance of a gate source is solved well.

The invention relates to a novel combined type hydrogen chloride synthetic furnace with a byproduct of high-pressure steam. The novel combined type hydrogen chloride synthetic furnace comprises a synthetic furnace and a cooler at the top of the synthetic furnace, wherein the synthetic furnace is divided into an upper section, a middle section and a lower section; each of the upper section and the lower section consists of a graphite cylinder and a steel shell sleeved outside the cylinder; and the middle section is the steel shell which is formed by a plurality of vertical steel condensation tubes in annular sealed matching. The novel combined type hydrogen chloride synthetic furnace provided by the invention has the following advantages that the middle section of the synthetic furnace is changed from an original structure comprising a steel shell and an inner graphite cylinder into a steel shell structure which is formed by the plurality of vertical steel condensation tubes in annular sealed matching, so that the pressure for generating steam is improved; and meanwhile, a flow guide structure is additionally arranged at a flange connection part between the upper section and the middle section, and a flow guide ring is arranged at the lower end surface of a graphite heat exchange block, so that hydrochloric acid is prevented from corroding the steel shell by spreading to a flange surface of a flange and then being in contact with the steel shell of the lower section of the cylinder, and the service life of the synthetic furnace is improved.

The invention provides a CC pin circuit of USB Type-C. In the Type-C interface circuit, a high-voltage NMOS is introduced for voltage isolation, and a first low-voltage region is generated. A pull-upresistor circuit, a CC connection detection circuit, a PD communication circuit and the like are placed in the first low-voltage region to realize high-voltage protection. The pull-down resistor circuit is directly connected to the CC pin, so that when the Type-C interface is in a Dead Battery state in a DRP or SNK mode, the CC connection can be normally realized by accessing the SRC or other DRPs(Data Redundancy Protocol). And a resistor in the pull-down resistor circuit is divided into a first resistor and a second resistor which are connected in series, and voltage clamping is performed ata middle series node to generate a second low-voltage region. And an enable control switch of the pull-down resistor circuit and the second resistor are placed in the second low-voltage region to realize high-voltage protection. The first resistor is placed in a high-voltage area and plays a role in current limiting when the voltage clamping circuit works. The withstand voltage design method andthe circuit structure can be applied to Type-of all modes. And in the C interface circuit, the voltage withstanding problem of the CC pin is solved.

The embodiment of the invention relates to a logic control circuit for charging a 0V battery, a battery protection chip and a circuit. The logic control circuit comprises a withstand voltage protection module, a charging control potential locking module and a potential translation module. The potential of the charge/discharge detection signal input terminal CS is raised to the required potential through the withstand voltage protection module, and the output terminal CS1 of the withstand voltage protection module is supplied to the charge control potential locking and potential translation module; The charging control potential locking module in the charging control potential locking and potential translation module fixes the potential of the gate control terminal OC of the charging control transistor in the battery protection circuit to the potential of the positive input terminal VDD of the power supply after the 0V battery is connected to the charger; The potential translation module converts the input signal with the high/low level VDD/0 V to the output signal with the high/low level VDD/CS1 to control the on and off of the transistor for charge control. The voltage shift module converts the input signal with the high/low level VDD/0 V to the output signal with the high/low level VDD/CS1 to control the on and off of the transistor.

The invention provides a protective circuit for cascade of multiple battery strings. The protective circuit comprises a chip port voltage withstand protection circuit. A first resistor of the chip port voltage withstand protection circuit is connected with a battery pack negative terminal and a negative terminal of a first diode. A positive terminal of the first diode is connected with a ground end. A drain terminal of a first NMOS (N-channel metal oxide semiconductor) transistor of the chip port voltage withstand protection circuit is connected with a negative terminal of the first diode, a source terminal and a substrate in the first NMOS transistor are short-circuited and are connected with a battery pack negative terminal detection end, and a gate terminal of the first NMOS transistor is connected with a power terminal. A gate end of a second NMOS transistor of the chip port voltage withstand protection circuit is connected with a control terminal of a charge tube, a source terminal and a substrate in the second NMOS transistor are short-circuited and are connected with the ground end, a drain terminal of the second NMOS transistor is connected with a second resistor, and the second resistor is connected with the power terminal. A gate terminal of a PMOS (p-channel metal oxide semiconductor) transistor of the chip port voltage withstand protection circuit is connected with the drain terminal of the second NMOS transistor, a source terminal and a substrate in the PMOS transistor are short-circuited and are connected with the power terminal, and a drain terminal of the PMOS transistor is connected with a positive terminal of a second diode. A negative terminal of the second diode is connected with a gate terminal of the charge tube. A source terminal and a substrate in the charge tube are short-circuited and are connected with a battery pack negative terminal, and a drain terminal of the charge tube is connected with a drain terminal of a discharge tube. A source terminal and a substrate in the discharge tube are short-circuited and are connected with the ground end, and a gate terminal of the discharge tube is connected with a discharge tube control terminal. Very high positive voltage and very low negative voltage are prevented from entering a battery protection chip, and a safe and reliable multi-string battery protection scheme is formulated.

The invention provides a miniature high-pressure electromagnetic valve which comprises a metal coil framework, a fixed iron core fixed to one end of the coil framework and a coil winding installed on the coil framework, and a screw joint part is arranged at the end, facing the coil framework, of the fixed iron core. The screw joint part extends into the coil framework and is in threaded connection with the coil framework, and the ratio of the length of the part, extending into the coil winding, of the screw joint part to the axial length of the coil winding is 1/5-1/3: 1; a first magnetizer is arranged at one end, far away from the screw joint part, of the fixed iron core, a second magnetizer is sleeved at the other end of the coil framework, and the thickness of the first magnetizer and the thickness of the second magnetizer are 1-3mm; the miniature high-pressure electromagnetic valve overcomes the defects that an existing electromagnetic valve is complex in structure, large in size, poor in strength, small in magnetic field force and short in service life.

The invention relates to an ozone generator of an opening discharge zone, and a separate cooling chamber thereof. The ozone generator comprises a discharge zone, an oxygen chamber and an ozone chamber, wherein the discharge zone is opening, is not provided with an outer wall and a cooling chamber, is arranged inside a separate cooling chamber, and adopts a water cooling or air cooling manner, the discharge zone contains at least a discharge unit and two fixation discs for fixing the discharge unit, the oxygen chamber and the ozone chamber are arranged on the outer sides of both discharge unit fixation discs, the discharge unit can adopt a modular structure, each discharge module contains a plurality of discharge units and two discharge unit fixation plates respectively arranged on both ends of the discharge unit, the fixation plates are arranged on both discharge module fixation discs, and internal electrodes and external electrodes in every discharge module form electrical connections. The ozone generator adopting the structure contains a plurality of electrodes so as to provide characteristics of simple structure, fast heat dissipation, small size, high output in the single generator, online maintenance, and easy production, installation and maintenance.

The invention provides an ESD (Electro-Static Discharge) protection device structure for a thin film transistor and a preparation method thereof, and provides a substrate on which a substrate, a first insulating layer, a middle layer, a second insulating layer and a device layer are sequentially stacked from bottom to top, and a first conductive type layer and a second conductive type layer which are in contact with the first insulating layer are formed in the substrate, the ESD protection diode is manufactured on the substrate through the first conductive type layer and the second conductive type layer, a PN junction is formed in the substrate, the PN junction can conduct ESD protection on a thin film transistor circuit manufactured in a device layer in the follow-up process, and due to the fact that the thin film transistor basically belongs to the low-temperature process, the ESD protection diode is manufactured on the substrate through the first conductive type layer and the second conductive type layer. Therefore, the performance degradation of the PN junction in the substrate cannot be caused by the subsequent preparation process of the thin film transistor, and further, when ESD occurs, the middle layer can shield the influence of the leakage current of the PN junction on the thin film transistor, so that the voltage withstanding problem of the ESD protection device structure of the thin film transistor can be effectively solved.

The invention discloses a light emitting diode (LED) display screen constant current drive circuit with high constant current accuracy. The LED display screen constant current drive circuit with the high constant current accuracy comprises a reference voltage source circuit, a constant current adjustment circuit, a voltage sampling circuit, a current image ratio self-adjusting circuit, a current mirror circuit and a display frame data processing circuit. The reference voltage source circuit comprises seven-level loop oscillators and a band-gap reference circuit. The voltage sampling circuit comprises a differential comparator and a logic processing circuit. The current image ratio self-adjusting circuit comprises a plurality of logic sum sequence circuits. An output drive channel port of the circuit is provided with a 13V voltage withstanding circuit which comprises two n-metal oxide semiconductor (NMOS) tubes. The constant current adjustment circuit comprises a comparator, a current bias pipe and an external ground resistor. A constant current I0 is adjusted through adjustment of the external ground resistor. The LED display screen constant current drive circuit with the high constant current accuracy has the advantages of being capable of improving constant current accuracy of a chip, capable of increasing LED display screen gray level gradation, capable of improving a luminance contrast degree, capable of achieving voltage withstanding of the output drive channel port with low cost and the like.

The invention provides a level shift circuit based on a low voltage tube. The circuit comprises an input stage circuit for receiving an inverted input signal, a load stage circuit with a positive feedback structure, and a clamp-level circuit consisting of a P tube voltage protection clamp circuit and an N tube voltage protection clamp circuit. The steady-state voltage of an input device and a drain terminal of a load device can be adjusted by adjusting a width and length ratio of a clamp device so as to control the voltage applied to the device to ensure that the voltage varies within an allowable range.

A PTAT reference current source circuit with high-voltage power supply comprises a current absorption module and a PTAT reference current generation module. The PTAT reference current generation module converts a temperature signal into a reference current in direct proportion to absolute temperature through clamping of a PNP type triode and outputs the reference current, and an LDMOS tube is adopted to replace a common MOS tube in a traditional structure, so that the circuit can adapt to high-voltage power supply. In view of the problem that the output reference current is influenced becausethe parasitic capacitance of a tube is increased and dv/dt noise of input voltage is more easily disturbed to a gate electrode of a fourth NMOS (N-channel metal oxide semiconductor) tube due to the fact that a common MOS (metal oxide semiconductor) is replaced by an LDMOS tube and the problem of lower opening speed caused by higher gate-source capacitance of the LDMOS tube, an LDMOS voltage-dividing current mirror and a capacitor noise filtering structure are further designed, so that high voltage can be borne, and the influence of dv/dt noise is reduced. Meanwhile, the current of the PTAT reference current generation module is extracted through the current absorption module, and the speed of establishing a stable state of a reference current is increased.