55results about "Reliability increase in bipolar transistors" patented technology

An apparatus and method for driving an output signal in a high speed integrated circuit. The apparatus and methods enable the output voltage swing from the driver to exceed the breakdown voltage of any individual element in the output driver. A high speed driver can utilize one or more transistors in a stacked configuration, such that the breakdown voltage of the entire stacked configuration is based on the number of transistors in the stack. The driver is configured to distribute the output voltage substantially equally among each of the stacked transistors, such that the driver is able to source an output voltage swing that is greater than the breakdown voltage of any individual transistor in the driver.

The invention discloses an electronic equipment analog signal calibration circuit. The circuit comprises a frequency acquisition circuit, a feedback constant current circuit and a push-pull output circuit. The frequency acquisition circuit acquires signal frequency in an analog signal channel in the low-voltage electronic equipment control terminal; the feedback constant current circuit utilizes atriode Q1, a triode Q2 and a voltage stabilizing tube D3 to form a constant current source circuit stable signal potential. Meanwhile, a current-voltage conversion circuit composed of a variable resistor R8 and an operational amplifier AR3 is used for converting a current signal into a voltage signal and inputting the voltage signal into a push-pull output circuit; an abnormal signal detection circuit is composed of a silicon controlled rectifier VTL1 and a voltage-regulator tube D4 and feeds back abnormal signals to the collector electrode of a triode Q2. and finally, the push-pull output circuit uses a triode Q3, a triode Q4 and a variable resistor R16 to form a push-pull circuit to reduce signal conduction loss and then output the signal, so that the signal frequency can be converted into a compensation signal of a signal in an analog signal channel in a remote intelligent equipment control terminal.

A sequencing system for sequencing a first node voltage at a first node and a second node voltage at a second node which is less than the first node voltage is disclosed. The sequencing system includes a bias circuit configured to provide a bias current in response to the first node voltage beginning to change to a first supply voltage. The sequencing system includes a switch configured to provide a low impedance path between the first node and the second node when the bias circuit is providing the bias current. The switch is configured to provide a high impedance path when the second node voltage is within a range of a second supply voltage which is less than the first supply voltage.

An n-type transistor and a p-type transistor are connected in series such that, when the two transistors are turned on, current flows from the collector of the n-type transistor to the collector of the p-type transistor. A positive-feedback capacitor is connected between the collector of one transistor and the base of the other transistor. The two transistors turn on together when the base voltage of the n-type transistor exceeds the base voltage of the p-type transistor by at least the sum of the turn-on threshold voltages of the two transistors and (i) the two transistors turn off together when the base voltage of the n-type transistor fails to exceed the base voltage of the p-type transistor by at least that sum. The positive-feedback capacitor ensures that the two transistors turn fully on and off together. In certain embodiments, the circuitry can be controlled to operate as a current pulse generator.

The invention discloses a water quality monitoring real-time early-warning system. The system includes a frequency collection circuit, a frequency modulation feedback circuit and a filter transmittingcircuit. The frequency collection circuit uses a frequency collector J1, of which a model is SJ-ADC, to detect water resource environment measurement data signal frequency received by a ground center. The frequency modulation feedback circuit receives output signals of the frequency collection circuit from two paths, a first path uses a triode Q1 and a triode Q 2 to form a push-pull circuit to prevent signal crossover distortion, a second path sues resistors R2- R4 and capacitors C2-C4 to form a frequency selection circuit to screen out single frequency signals, finally, a frequency modulation circuit formed by a triode Z3, a triode Z4 and resistors R8-R10 receives signals of the two paths and carries out frequency modulation, the filter transmitting circuit uses an inductor L2, a capacitor C7 and a capacitor C8 to form a filter circuit to filter out signal clutters. The water resource environment measurement data signal frequency received by the ground center can be detected in realtime, and converted into a water environment monitoring platform early-warning correction triggering signal.

The invention provides a CC pin circuit of USB Type-C. In the Type-C interface circuit, a high-voltage NMOS is introduced for voltage isolation, and a first low-voltage region is generated. A pull-upresistor circuit, a CC connection detection circuit, a PD communication circuit and the like are placed in the first low-voltage region to realize high-voltage protection. The pull-down resistor circuit is directly connected to the CC pin, so that when the Type-C interface is in a Dead Battery state in a DRP or SNK mode, the CC connection can be normally realized by accessing the SRC or other DRPs(Data Redundancy Protocol). And a resistor in the pull-down resistor circuit is divided into a first resistor and a second resistor which are connected in series, and voltage clamping is performed ata middle series node to generate a second low-voltage region. And an enable control switch of the pull-down resistor circuit and the second resistor are placed in the second low-voltage region to realize high-voltage protection. The first resistor is placed in a high-voltage area and plays a role in current limiting when the voltage clamping circuit works. The withstand voltage design method andthe circuit structure can be applied to Type-of all modes. And in the C interface circuit, the voltage withstanding problem of the CC pin is solved.

The invention discloses an on-off input circuit for a relay protection testing device. The circuit consists of a voltage stabilizing diode, a rectification bridge circuit, a photoelectric coupler circuit, a triode switching circuit, a filter capacitor and a voltage stabilizing reference power circuit. The on-off input circuit for the relay protection testing device is self-adaptive about various types of the input patterns, and the pre-configuration does not need to be executed; and the on-off input circuit for the relay protection testing device is self-adaptive about the polarity of the active input, even the reverse connection can be correctly identified, and the potential safety hazard cannot be caused by the polarity of the input. The on-off input circuit for the relay protection testing device is provided with the potential output, and is capable of providing the power for the high-speed output of the Darlington tube type, and reducing the external connections.

A method for reducing narrow gate width effects in an integrated circuit includes finding the smallest transistor channel widths that are larger than the minimum width for the technology for library cells that produce logic blocks that meet timing constraints while using the least amount of power and have the smallest possible area. The method may include characterizing a device library while varying process, voltage and temperature parameters, and synthesizing an HDL representation of a functional logic block including cells from the device library. The method may also include determining whether timing, area, and power values of the functional logic block are within a predetermined range. In response to the timing, area, and power values not being within the predetermined range, iteratively increasing the channel width of at least a portion of the transistors of at least one of the cells in the device library.

An anti-backflow circuit of a transistor is connected with a signal terminal and comprises: a driving transistor, awherein gate of the driving transistor is connected with a driving signal, a high-potential end of the driving transistor is connected with a power supply, and a low-potential end of the driving transistor is connected with the signal terminal; and an anti-backflow module which is electrically connected with the pull-up power supply, the signal terminal and the substrate of the driving transistor, and is configured to enable the power supply voltage to be loaded on the substrateof the driving transistor when the power supply is powered on, and enable the voltage of the signal terminal to be loaded on the substrate of the driving transistor when the pull-up power supply is powered off. According to the invention, the substrate voltage of the transistor tube can be adjusted to change along with the level of the signal terminal, so that the low-potential voltage of the transistor is not higher than the substrate voltage, and the transistor tube is effectively prevented from being burnt out due to backward flowing of current.

The invention discloses a high-voltage PMOS drive circuit. The circuit comprises a double-layer potential translation circuit, a clamper and a buffer. The double-layer potential translation circuit receives a low-end logic signal and a bias voltage provided by the clamper and outputs a high-end logic level to the buffer, and the buffer generates a high-end driving voltage as an output of the high-voltage PMOS drive circuit to control on and off of a high-voltage PMOS transistor. The output end of the clamper provides a negative end voltage for the buffer, so that the buffer works in a safe area, and the clamper provides a bias voltage for the double-layer potential translation circuit. Under the condition that an external capacitor is not needed, the voltages of a load element, a latch andthe buffer are all controlled within a safe working range, the integration level is high, and the cost is low. The voltage difference generated on the load element in the double-layer potential translation circuit is stable and reliable and is not easy to interfere with, and a latch required in the traditional technology can be omitted, so that the cost is saved.

The invention discloses a nuclear hardening D-latch, and belongs to the field of anti-nuclear reinforcement in integrated circuit reliability. The problem that according to existing anti-radiation D-latches, more hardware is needed, power consumption is high, delay time is long, and fault tolerance for flipped double nodes cannot be realized is solved. The latch of the invention includes two inverters I1 and I2, 28 NMOS transistors N1 to N28, and 12 PMOS transistors P1 to P12. Used devices are few, volume is small, a structure is simple, and due to that the used devices are few, power consumption of the entire latch is reduced, and hardware overheads are lower. A signal at an input end of the latch can be transmitted to an output port simply through one transmission gate, data transmissiontime is short, fault tolerance for any-single-node and double-node flipping can also be realized, and thus fault tolerance protection against single-node and double-node flipping is realized. The latch of the invention can provide protection for application of integrated circuit chips in high-radiation environments (such as aerospace and terrestrial nuclear power plants).

The invention discloses a driving protection circuit. The circuit includes: a gate driver; a first triode the gate electrode of which is connected with the first port of the gate electrode driver, andthe drain electrode of which is connected with the grounding end of the gate electrode driver; a second triode the gate electrode of which is connected with the second port of the gate electrode driver, and the drain electrode of which is connected with the third port of the gate electrode driver; a third voltage stabilizing diode the positive electrode of which is connected with the third port of the gate driver, and the negative electrode of which is connected with the fourth port of the gate driver; and a field effect transistor which is connected with the fourth port of the gate driver and the negative electrode of the third voltage stabilizing diode. According to the invention, the effect of improving the stability of the field effect transistor is achieved.

An embodiment relates to a power-on reset circuit for a semiconductor integrated circuit, comprising: a power supply voltage detection module for detecting a power supply voltage and outputting a first indication signal indicating a magnitude of the power supply voltage; a current bias module coupled to the power supply voltage detection module and including: a first current source for outputtinga first reference current, and a resistance setting unit which is used for setting the bias resistance of the first current source based on the first indication signal, so that the bias resistance ismatched with the power supply voltage; a threshold value setting and detecting module which is coupled to the current bias module and comprises: a threshold value setting unit, the threshold value setting unit being used for setting a plurality of voltage threshold values based on the first reference current and outputting a second indication signal when the power supply voltage is greater than the maximum value of the plurality of voltage threshold values, and a filtering and shaping unit which is used for filtering and shaping the second indication signal so as to generate a power-on reset signal of the power supply. In this way, the power-on reset circuit of the power supply is low in power consumption and high in reliability.

The invention discloses a millimeter wave on-off keying modulator with high isolation and stable input matching. The modulator comprises a cascode circuit, a transformer and an improved stacked cascode switching circuit, according to the improved stacked common-gate switching circuit, a series inductor, a lower-layer switching transistor and an upper-layer switching transistor are added on the basis of a traditional stacked common-gate switching circuit; by optimizing the inductance value of the series inductor and the gate widths of the lower-layer switching transistor and the upper-layer switching transistor, the on/off isolation of the circuit can be improved under the condition that the circuit gain is not influenced, and the input impedance change of the circuit in an on/off state canalso be remarkably reduced; besides, the cascode circuit and the improved stacked common-gate switching circuit are coupled through the transformer, so that small size, low voltage and high gain arerealized, influence of the input impedance change of the improved stacked common-gate switching circuit in an on/off state on input matching of the modulator is further reduced, and more stable inputmatching is realized.

The invention provides an insulated gate bipolar transistor (IGBT) driving circuit. The IGBT driving circuit comprises a primary side power supply circuit, a secondary side power supply circuit and aprotection circuit, wherein the secondary side power supply circuit is connected with the primary side power supply circuit; the secondary side power supply circuit comprises a high side driving circuit and a low side driving circuit; the high side driving circuit and the low side driving circuit are connected with each other, and output an electric signal to a grid of an IGBT in a cooperative way; a first end of the protection circuit is connected to the grid of the IGBT; a second end of the protection circuit is connected to the high side driving circuit; and when the voltage of the first end of the protection circuit is higher than the voltage of the second end of the protection circuit, the protection circuit is switched on. In the embodiment of the invention, the protection circuit isarranged, and the voltage of the first end of the protection circuit is higher than the voltage of the second end of the protection circuit when the grid of the IGBT is in an overvoltage state to switch on the protection circuit, so that the voltage of the grid of the IGBT is fed back to the high side driving circuit, and the IGBT is protected from being damaged when the grid of the IGBT is in the overvoltage state.