The invention relates to the technical field of memristors, and provides a
chitosan-based
memristor which comprises a substrate, a buffer layer, a composite
dielectric layer and a top
electrode which are sequentially stacked from bottom to top, the buffer layer is formed by spin-
coating a PEDOT: PSS
aqueous solution on the substrate and then carrying out heat treatment; the composite
dielectric layer is formed by spin-
coating the buffer layer with an ultrasonic composite solution formed by a
graphene oxide aqueous dispersion and a
chitosan acetic acid solution and then carrying out heat treatment. By adopting a collaborative architecture of the
chitosan-
graphene oxide composite
dielectric layer and the PEDOT: PSS buffer layer, the prepared bio-based
memristor has the effects of relatively high switching ratio, relatively low
operating voltage and good performance stability. Meanwhile, based on stable high and
low resistance states of the device, all seven basic logic operations including a NOT gate, an
AND gate, an OR gate, a
NAND gate, a
NOR gate, an XOR gate and an
XNOR gate are completely realized on a single bio-based platform, the function accuracy can reach 100%, and an unexpected effect is achieved.