430 results about "Three-dimensional integrated circuit" patented technology

An assembly consisting of three dimensional stacked SOI chips, and a method of forming such integrated circuit assembly, each of the SOI chips including a handler making mechanical contact to a first metallization pattern making electrical contact to a semiconductor device. The metalized pattern, in turn, contacts a second metallization pattern positioned on an opposite surface of the semiconductor device. The method of fabricating the three-dimensional IC assembly includes the steps of: a) providing a substrate having a third metalized pattern on a first surface of the substrate; b) aligning one of the SOI chips on the first surface of the substrate, by having the second metallization pattern of the SOI chip make electrical contact with the third metalized pattern of the substrate; c) removing the handler from the SOI chip, exposing the first metallization pattern of the SOI chip; d) aligning a second one of the SOI chips with the first SOI chip, having the second metallization pattern of the second SOI chip make electrical contact to the exposed first metallization pattern of the first SOI chip; and e) repeating steps c) and d) for mounting subsequent SOI chips one on top of the other.

Each of a first substrate and a second substrate includes a surface having a diffusion resistant dielectric material such as silicon nitride. Recessed regions are formed in the diffusion resistant dielectric material and filled with a bondable dielectric material. The patterns of the metal pads and bondable dielectric material portions in the first and second substrates can have a mirror symmetry. The first and second substrates are brought into physical contact and bonded employing contacts between metal pads and contacts between the bondable dielectric material portions. Through-substrate-via (TSV) structures are formed through bonded dielectric material portions. The interface between each pair of bonded dielectric material portions located around a TSV structure is encapsulated by two diffusion resistant dielectric material layers so that diffusion of metal at a bonding interface is contained within each pair of bonded dielectric material portions.

This invention describes a method of stacking, bonding, and electrically interconnecting a plurality of thin integrated circuit wafers to form an interconnected stack of integrated circuit layers. The first integrated circuit layer is formed by conventional processing on a silicon wafer to the stage where bond pads are patterned on a wiring layer interconnecting the subjacent semiconductive devices. The remaining integrated circuit layers are formed by first processing a standard wafer to form integrated circuit devices and wiring levels up to but not including bond pads. Each of these wafers is mounted onto a handler wafer by its upper face with a sacrificial bonding agent. The wafer is thinned, permanently fastened to the top surface of the first base wafer by a non-conductive adhesive applied to the thinned under face, and dismounted from the handler. Vertical openings are etched through the thinned layer to the bond pads on the subjacent wafer. Robust conductive pass-through plugs with integrated upper bond pads are formed in the openings. Additional thinned integrated circuit layers may be prepared, thinned, cemented onto the stack. Wiring interconnections can be made between any two or more layers. The process is unique in that it can be used to further stack and interconnect any number of thinned wafer layers to form a three dimensional integrated circuits, including MEMS devices. This approach provides a low temperature wafer bonding method using an adhesive which results in process simplicity and cost effectiveness by eliminating an additional masking and patterning process for under bump metal thereby enabling standard wafers to be integrated into a 3D stack with existing wire bonded wafers.

An integrated circuit design, structure and method for fabrication thereof includes at least one logic device layer and at least two additional separate memory array layers. Each of the logic device layer and the at least two memory array layers is independently optimized for a particular type of logic device or memory device disposed therein. Preferably also disposed within the logic device layer are array sense amplifiers, memory array output drivers and like higher performance circuitry otherwise generally disposed within memory array layer substrates. All layers may be independently powered to provide additional performance enhancement.

A design structure comprising an integrated circuit architecture, circuit structure, and/or instructions for fabrication thereof. The circuit structure includes at least one logic device layer and at least two additional separate memory array layers. Each of the logic device layer and the at least two memory array layers is independently optimized for a particular type of logic device or memory device disposed therein. Preferably also disposed within the logic device layer are array sense amplifiers, memory array output drivers and like higher performance circuitry otherwise generally disposed within memory array layer substrates. All layers may be independently powered to provide additional performance enhancement.

Vertically stacked integrated circuits and methods of fabrication thereof are disclosed. Deep vias that provide vertical electrical connection for vertically stacked integrated circuits are formed early in the manufacturing process, before integrated circuits are bonded together to form a three dimensional integrated circuit (3D-IC).

The present invention is directed to a three-dimensional semiconducting integrated circuit incorporating an integrated heat-sink dissipating heat produced by the semiconductor device mounted thereon.

This invention provides an image sensor module with a three-dimensional die-stacking structure. By filling a conductive material into through silicon vias within at least one image sensor die, and into via holes within an insulating layer, vertical electrical connections are formed between the image sensor die and an image processor buried in the insulating layer. A plurality of solder bumps is formed on a backside of the image sensor module so that the module can be directly assembled onto a circuit board. The image sensor module of this invention is characterized by a wafer-level packaging architecture and a three-dimensional die-stacking structure, which reduces electrical connection lengths within the module and thus reduces an area and height of the whole packaged module.

An apparatus having a three-dimensional integrated circuit structure is described herein. The apparatus include an interposer for carrying a plurality of high and low-power chips. The high-power chips are attached and connected to one side of the interposer, while the low-power chips are attached and connected to the other side of the interposer. In generally, the high-power chips produce more heat than does the low-power chip during their operations. The interposer further include through silicon vias and redistribution layers for connecting the chips on both surfaces. In addition, the interposer assembly is attached and connected to a substrate layer, which is in turn attached and connected to a printed circuit board. In order to provide improve thermal management, the interposer surface carrying the high-power chips are oriented away from the circuit board. A heat spreader is attached to the back sides of the high-power chips for dissipating the heat.

Integrated circuits having complementary metal-oxide semiconductor (CMOS) and photonics circuitry and techniques for three-dimensional integration thereof are provided. In one aspect, a three-dimensional integrated circuit comprises a bottom device layer and a top device layer. The bottom device layer comprises a substrate; a digital CMOS circuitry layer adjacent to the substrate; and a first bonding oxide layer adjacent to a side of the digital CMOS circuitry layer opposite the substrate. The top device layer comprises an analog CMOS and photonics circuitry layer formed in a silicon-on-insulator (SOI) layer having a buried oxide (BOX) with a thickness of greater than or equal to about 0.5 micrometers; and a second bonding oxide layer adjacent to the analog CMOS and photonics circuitry layer. The bottom device layer is bonded to the top device layer by an oxide-to-oxide bond between the first bonding oxide layer and the second bonding oxide layer.

The preferred embodiments of the present invention provide a three-dimensional (3D) semiconductor structure and a method of forming the same. The 3D semiconductor structure includes a first substrate bonded to a second substrate. The first substrate includes substantially all NMOS devices. The second substrate includes substantially all PMOS devices. The substrates can be bonded face-to-face, face-to-back, or back-to-back. The method includes providing a first substrate and a second substrate, forming a first circuit comprising at least one NMOS device on the first substrate, wherein the first substrate includes substantially no PMOS devices, forming a second circuit comprising at least one PMOS device on the second substrate, wherein the second substrate includes substantially no NMOS devices, and bonding the first and second substrates after forming the first and second circuits.

Examples of a computer system packaged in a three-dimensional stack of dies are described. The package includes an electrical die and an optical die coupled to and stacked with the electrical die. The electrical die includes circuitry to process and communicate electrical signals, and the optical die includes structures to transport optical signals. The electrical die has a smaller area than the optical die so that the optical die includes an exposed mezzanine which is configured with optical input/output ports. Additionally, the packaging can be configured to provide structural support against insertion forces for external optical connections.

An exemplary embodiment of the present invention provides a chip for use in fabricating a three-dimensional integrated circuit, the chip comprising a wafer, one or more metallic-filled, electrical vias, and one or more hollow, fluidic vias. The wafer can comprise a first surface and a second surface. The one or more metallic-filled, electrical vias can extend through the wafer. Each electrical via can be in electrical communication with an electrical interconnect proximate the first surface, providing electrical communication between chips in the integrated circuit. The one or more hollow, fluidic vias can extend through the wafer. Each fluidic via can be in fluid communication with a fluidic interconnect, providing fluid communication between adjacent chips in the integrated circuit. Each fluidic interconnect can comprise a first end proximate the first surface, a second end, and a cap proximate the second end, defining an air-filled space within the fluidic interconnect.

The design methods described enable three-dimensional integrated circuit systems in which all of the dies, in a vertically bonded stack of dies, are identical. Only one mask set and wafer type is required since a single circuit design is produced for one die in the stack and reused for all the dies with little or no modification. The system scales directly as the level of stacking is increased while incurring no extra design effort, beyond that required for the initial design.

System and method for manufacturing three-dimensional integrated circuits are disclosed. In one embodiment, the method includes providing an imaging writer system that includes a plurality of spatial light modulator (SLM) imaging units arranged in one or more parallel arrays, receiving mask data to be written to one or more layers of the three-dimensional integrated circuit, processing the mask data to form a plurality of partitioned mask data patterns corresponding to the one or more layers of the three-dimensional integrated circuit, assigning one or more SLM imaging units to handle each of the partitioned mask data pattern, and controlling the plurality of SLM imaging units to write the plurality of partitioned mask data patterns to the one or more layers of the three-dimensional integrated circuits in parallel. The method of assigning performs at least one of scaling, alignment, inter-ocular displacement, rotational factor, or substrate deformation correction.

The 3D chip-stack package comprises a component-embedded plate and a side IC. The PCB has a plurality of conductive contacts. The component-embedded plate comprises a dielectric layer; an active component embedded in the dielectric layer, one surface of each active component exposed outside the dielectric layer, the active components having a plurality of TSVs (Through Silicon Via), one ends of the TSVs exposed outside the exposed surface, the other ends of the TSVs corresponding to the conductive contacts of the PCB; and an electrical circuit on the dielectric layer and in electrical connection between the other ends of the TSVs of the active component and the corresponding conductive contacts of the PCB, respectively. The side IC has a plurality of pads. The pads are electrically connected with the exposed ends of the TSVs of the active component.

A three-dimensional integrated circuit that provides reduced interconnect signal delay over known 2-dimensional systems. The three-dimensional integrated circuit also allows improved circuit cooling. The three-dimensional integrated circuit comprises two or more electrically connected integrated circuits, separated by a cooling channel.