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9 results about "Surface breakdown" patented technology
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Method for calculating surface breakdown field strength of high-voltage direct-current insulator
The invention provides a method for calculating the surface breakdown field intensity of a high-voltage direct-current insulator. The method comprises the following steps: 1) calculating a direct-current air gap discharge field intensity expected value Ed; 2) designing the specification of the tested insulation sample according to the Ed obtained in the step 1); 3) loading the tested insulation sample into a test device for breakdown test to obtain a lightning impulse voltage and direct current voltage superposed breakdown voltage U0; and 4) calculating the superposition breakdown field strength E of the lightning impulse voltage and the direct-current voltage of the insulation sample according to the U0. The complete method for calculating the superposition breakdown field intensity of the lightning impulse voltage and the direct-current voltage is provided, the specification of the tested insulation sample is reasonably determined based on the expected value of the negative polarity direct-current air gap discharge field intensity, then the field intensity is calculated, and the field intensity design reference of the direct-current insulator is provided for the design of the high-voltage direct-current insulator.
Owner:MAINTENANCE & TEST CENTRE CSG EHV POWER TRANSMISSION CO +1
Mitigating surface damage of probe pads in preparation for direct bonding of a substrate
PendingUS20250385141A1Semiconductor/solid-state device testing/measurementSemiconductor/solid-state device detailsSurface breakdownPhysical chemistry
Mitigating surface damage of probe pads in preparation for direct bonding of a substrate is provided. Methods and layer structures prepare a semiconductor substrate for direct bonding processes by restoring a flat direct-bonding surface after disruption of probe pad surfaces during test probing. An example method fills a sequence of metals and oxides over the disrupted probe pad surfaces and builds out a dielectric surface and interconnects for hybrid bonding. The interconnects may be connected to the probe pads, and / or to other electrical contacts of the substrate. A layer structure is described for increasing the yield and reliability of the resulting direct bonding process. Another example process builds the probe pads on a next-to-last metallization layer and then applies a direct bonding dielectric layer and damascene process without increasing the count of mask layers. Another example process and related layer structure recesses the probe pads to a lower metallization layer and allows recess cavities over the probe pads.
Owner:ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC
Semiconductor structure and preparation method thereof
The invention relates to the technical field of semiconductors, particularly provides a semiconductor structure and a preparation method thereof, and aims to solve the technical problem that a longitudinal electric field at the tail end of a field plate greatly affects the upper limit value of breakdown voltage of a device in the prior art. To this end, the semiconductor structure of the present application comprises: a semiconductor substrate; a well region in the semiconductor substrate; the body region and the drift region are located in the well region; the source region and the contact region are located in the body region; the drain region is positioned in the drift region; the gate dielectric layer and the field oxide layer are located on the surface of the semiconductor substrate; a penetrating groove penetrating through the field oxide layer is formed in the field oxide layer, and a high-dielectric-constant dielectric material layer is arranged in the penetrating groove; and a gate on the gate dielectric layer extends to cover the dielectric material layer to serve as a field plate. According to the semiconductor structure provided by the invention, the electric field distribution on the surface of the semiconductor substrate is smoother, so that the surface breakdown voltage is closer to the internal breakdown voltage, and the breakdown voltage is improved.
Owner:BEIJING YANDONG MICROELECTRONICS TECH CO LTD
A method for manufacturing high-voltage planar thyristor
The application provides a manufacturing method of a high-voltage planar thyristor, which is surrounded by an extended junction at the edge of the four sides of a front P-type base region, the diameter of the extended circle is different, and gradually decreases away from the front P-type base region, so that the doping concentration continuously and linearly decreases along the front P-type base region to the edge direction, and the gradually reduced doping concentration also gradually reduces the junction depth, which can effectively improve the main junction electric field, thereby reducing the size of the terminal and reducing the chip area; and a composite passivation film is formed on the front of the silicon wafer, which has a shielding effect on the applied electric field, avoids surface breakdown, improves the reverse voltage resistance, and is not easy to crack, so that the performance of the thyristor product is more superior.
Owner:SEMITEL ELECTRONICS
High-voltage insulator surface breakdown test device
PendingCN121541009ATesting using optic methodsMeasurement instrument housingElectrical conductorSurface breakdown
The invention discloses a surface breakdown test device for a high-voltage insulator. The surface breakdown test device comprises a cylinder and an insulating support structure, an insulator is arranged in the cylinder body and separates an air chamber in the cylinder body; an end cover is arranged at the end part of the cylinder body; the insulating pillar structure comprises a first conductor, an insulating pillar and a second conductor. The first conductor is connected with the insulator, the second conductor is connected with the end cover, and the insulating pillar is arranged between the first conductor and the second conductor. The insulating pillar structure in the test device is convenient to disassemble and can be repeatedly used.
Owner:HENAN PINGGAO ELECTRIC
Test tool for gas insulation criterion research
ActiveCN224263319UMeasurement instrument housingTesting vessel constructionSurface breakdownProcess engineering
The utility model relates to a test tool for gas insulation criterion research, and belongs to the technical field of test tools, the test tool comprises a test box body and a capacitive high-voltage bushing communicated with the test box body, and the test box body comprises a shell, an upper electrode, a lower electrode and an insulation cushion block. According to the application, the test is relatively convenient, the surface breakdown voltage characteristic and the breakdown path of the solid insulation under the specified pressure can be obtained, and the air gap breakdown characteristic between the two electrodes (after the insulating cushion block between the electrodes is taken out) can be obtained. And design regulations are provided for turn-to-turn insulation design, main insulation design and lead-to-ground insulation design of the gas insulation transformer. The lower electrode of the test tool is designed to be a movable electrode, breakdown voltage values under different distances can be obtained by adjusting the distance between the lower electrode and the upper electrode, and a breakdown voltage curve can be drawn.
Owner:CHANGZHOU TOSHIBA SHUDIAN TRANSFORMER
Square battery cover plate size detection device for continuous conveying line
Owner:YUANBO INTELLIGENT TECHNOLOGY (HUIZHOU) CO LTD
Terminal structure for power devices and method of fabrication
The application relates to a terminal structure and a preparation method of a power device. In a terminal region, a depletion stop ring is arranged in the direction of a second conductive type VLD region of a main junction, wherein the depletion stop ring is distributed in the terminal region at least in the second conductive type VLD region; for any depletion stop ring, a plurality of interval distributed depletion stop grooves are arranged, and the groove bottom of the depletion stop groove is below the second conductive type VLD region; for any depletion stop groove, in-groove conductive polysilicon filled in the depletion stop groove and in-groove low dielectric insulator covering the inner wall of the depletion stop groove are arranged, and the in-groove conductive polysilicon is insulated and separated from the inner wall of the depletion stop groove through the in-groove low dielectric insulator. The application can effectively avoid the surface breakdown of the VLD region, eliminate the influence of the periphery of the main junction and the deviation of the injection dose of a production line machine on the breakdown voltage, and improve the reliability of the terminal.
Owner:JIANGSU CAS IGBT TECHNOLOGY CO LTD
High-voltage diode and preparation method thereof
The invention discloses a high-voltage diode and a preparation method thereof, the high-voltage diode comprises a substrate, an epitaxial layer, at least one reinforcing assembly and a passivation layer, the epitaxial layer is provided with a main junction region and at least one voltage dividing ring arranged around the main junction region; the reinforcing assembly comprises a shallow trench, a charge adsorption piece and an insulation isolation piece, and the shallow trench is adjacent to the voltage dividing ring; the charge adsorption part is arranged in the shallow trench and is used for adsorbing positive charges; the insulating isolation piece is arranged on the side wall and the bottom of the shallow trench and is used for isolating the charge adsorption piece and the epitaxial layer; and the passivation layer is arranged on one side, far away from the substrate, of the epitaxial layer, covers the voltage dividing ring and the reinforcing assembly, and is attached to the charge adsorption part. Through the above design, the voltage bearing capability of the voltage dividing ring in the high-voltage diode is improved, and the risk that the surface of the high-voltage diode is broken down is reduced.
Owner:QINGDAO HKC MICROELECTRONICS CO LTD +2