203 results about "Transient-voltage-suppression diode" patented technology

An electronic device formed as an integrated circuit (IC) wherein the electronic device further includes a transient voltage suppressing (TVS) circuit. The TVS circuit includes a triggering MOS transistor connected between an emitter and a collector of a first bipolar-junction transistor (BJT) coupled to a second BJT to form a SCR functioning as a main clamp circuit of the TVS circuit. The TVS circuit further includes a triggering circuit for generating a triggering signal for the triggering MOS transistor wherein the triggering circuit includes multiple stacked MOS transistors for turning into a conductive state by a transient voltage while maintaining a low leakage current.

A transient voltage-suppressing (TVS) device supported on a semiconductor substrate is applied to protect an electronic device from a transient voltage. The TVS device includes a clamp diode functions with a high-side and a low side diodes for clamping a transient voltage disposed on a top layer of the semiconductor substrate insulated by a insulation layer constituting a TVS on silicon-on-insulator (SOI) device. In an exemplary embodiment, the insulator layer further includes a thick body oxide (BOX) layer having a thickness in the range of 250 Angstroms to 1 micrometer to sustain an application with a breakdown voltage higher than 25 volts. In another exemplary embodiment, the clamp diode further surrounded by a P-well and the P-well is formed on top of a P− / P+ substrate layer disposed above the insulator layer.

This invention discloses an electronic device formed as an integrated circuit (IC) wherein the electronic device further includes a transient voltage suppressing (TVS) circuit. The TVS circuit includes a triggering Zener diode connected between an emitter and a collector of a bipolar-junction transistor (BJT) wherein the Zener diode having a reverse breakdown voltage BV less than or equal to a BVceo of the BJT where BVceo stands for a collector to emitter breakdown voltage with base left open. The TVS circuit further includes a rectifier connected in parallel to the BJT for triggering a rectified current through the rectifier for further limiting an increase of a reverse blocking voltage. In a preferred embodiment, the triggering Zener diode, the BJT and the rectifier are formed in a semiconductor substrate by implanting and configuring dopant regions of a first and a second conductivity types in a N-well and a P-well whereby the TVS can be formed in parallel as part of the manufacturing processes of the electronic device.

This invention discloses an electronic device formed as an integrated circuit (IC) wherein the electronic device further includes a transient voltage suppressing (TVS) circuit for suppressing a transient voltage. The transient voltage suppressing (TVS) circuit includes a Zener diode connected between a ground terminal and a node for triggering a snapback circuit. In one embodiment, this node may be a Vcc terminal. The TVS device further includes a snapback circuit connected in parallel to the Zener diode for conducting a transient voltage current with a snapback current-voltage (I-V) characteristic upon turning on of the snapback circuit And, the TVS device further includes a snapback suppressing circuit connected in series with the snapback circuit for conducting a current with an I-V characteristic complementary to the snapback-IV characteristic for clamping a snapback voltage.

A symmetrical blocking transient voltage suppressing (TVS) circuit for suppressing a transient voltage includes an NPN transistor having a base electrically connected to a common source of two transistors whereby the base is tied to a terminal of a low potential in either a positive or a negative voltage transient. The two transistors are two substantially identical transistors for carrying out a substantially symmetrical bi-directional clamping a transient voltage. These two transistors further include a first and second MOSFET transistors having an electrically interconnected source. The first MOSFET transistor further includes a drain connected to a high potential terminal and a gate connected to the terminal of a low potential and the second MOSFET transistor further includes a drain connected to the terminal of a low potential terminal and a gate connected to the high potential terminal.

The invention discloses a manufacturing process of a transient voltage suppression diode chip. The manufacturing process of the transient voltage suppression diode chip includes two production processes: a diffusion process and a GPP process. The steps of the diffusion process include original silicon wafer testing, original silicon wafer washing, phosphorus attachment, phosphorus diffusion, phosphorus wafer separation, single side sand blasting, single blasting washing, boron coating, boron diffusion, boron wafer separation, boron side sand blasting, and boron blasting washing, wherein the step of boron diffusion comprises primary boron diffusion and secondary boron diffusion; and the steps of the GPP process sequentially include oxidation, primary photoetching, groove etching, photoresist sintering, groove washing, SIPOS passive film formation, glassivation, secondary photoetching, surface etching, and nickel-gold plating. The manufacturing process of the transient voltage suppression diode chip in the invention reduces defects of the chip, enables voltage distribution to be relatively concentrated, and reduces reverse leakage current at the same time.

The invention discloses an IGBT active clamping protection circuit, and the circuit is a part of an IGBT drive protection circuit. The circuit comprises an IGBT (insulated gate bipolar transistor) and a push pole connected with a gate pole of the IGBT. The circuit also comprises a capacitor clamping circuit, a dynamic feedback circuit, and a static feedback circuit, and a collector electrode of the IGBT is connected with the positive electrode of a DC bus. The dynamic feedback circuit mainly consists of a first transient voltage inhibition diode, a feedback capacitor, and a first diode, and the static feedback circuit is connected between an output end of a clamping capacitor and the gate pole of the IGBT. The circuit guarantees that a switching-off voltage peak value of the IGBT is less than a maximum allowable value of an collector electrode during overcurrent switching-off and short-circuit protection. The circuit not only can accurately clamp an overvoltage, but also can guarantee the dynamic and static balance of voltage of an active circuit, is smaller in loss, is high in response speed, is simple in structure, is high in reliability, and can be used for the design of an IGBT drive protection circuit under various working conditions.

The invention relates to a Rogowski current sensor, which comprises an outer shielding structure, an annular magnetic medium framework, and a first coil and a second coil independently wound on the annular magnetic medium framework respectively. The first coil has more number of turns than the second coil; the first coil and the second coil are respectively connected in parallel with a first integral resistor and a second integral resistor with corresponding resistance; the first integral resistor and the second integral resistor are provided with a corresponding signal-measuring output end respectively; and the second integral resistor is connected in parallel with a transient voltage suppression diode. In a coil structure, by winding different turns of coils on the annular magnetic medium framework, the sensor measures a current signal in a wider amplitude range; and due to the mode that the second integral resistor is connected in parallel with the transient voltage suppression (TVS) diode, the export voltage at two ends of the second integral resistor is limited when heavy current passes through the coil, and the reliability of the sensor is improved.

The invention discloses an anti-shock surge circuit applied to a ruggedized computer, belongs to anti-surge circuits, and solves the problem of power supply failure after surge voltage shock in a power supply system of the ruggedized computer. The technical scheme is that a piezoresistor, a transient voltage suppressor diode and an overvoltage overcurrent protection circuit are connected in parallel, one end of each of the piezoresistor and the transient voltage suppressor diode is connected with the input end of a power supply, and the other end of each of the piezoresistor and the transient voltage suppressor diode is grounded; the overvoltage overcurrent protection circuit comprises an overvoltage protection voltage stabilization chip and a linear field effect transistor, a VCC pin of the overvoltage protection voltage stabilization chip is connected with the input end of the power supply, and an OUT pin of the overvoltage protection voltage stabilization chip is connected with the output end of the power supply; and the drain of the linear field effect transistor is connected with an SNS pin of the overvoltage protection voltage stabilization chip, the gate of the linear field effect transistor is connected with a GATE pin of the overvoltage protection voltage stabilization chip, and the source of the linear field effect transistor is connected with the OUT pin of the overvoltage protection voltage stabilization chip.

A transient voltage-suppressing (TVS) device supported on a semiconductor substrate is applied to protect an electronic device from a transient voltage. The TVS device includes a clamp diode functions with a high-side and a low side diodes for clamping a transient voltage disposed on a top layer of the semiconductor substrate insulated by a insulation layer constituting a TVS on silicon-on-insulator (SOI) device. In an exemplary embodiment, the insulator layer further includes a thick body oxide (BOX) layer having a thickness in the range of 250 Angstroms to 1 micrometer to sustain an application with a breakdown voltage higher than 25 volts. In another exemplary embodiment, the clamp diode further surrounded by a P-well and the P-well is formed on top of a P- / P+ substrate layer disposed above the insulator layer.

The invention discloses a transient voltage suppresser diode and a manufacturing method thereof. The transient voltage suppresser diode comprises a first steering diode, a second steering diode and a Zener diode which are connected in parallel, wherein an input / output interface is arranged between the first steering diode and a second steering diode, and a voltage signal wire is arranged between the first steering diode and the Zener diode. The transient voltage suppresser diode has super low capacitance value and stable performance and can satisfy the requirement of large-scale production.

A surge protection device includes a gas discharge tube surge protector connected between a Tip line and a Ring line, and further includes solid state heat-generating resistive elements in the Tip and Ring lines, and thermally-responsive sneak current grounding switches in the Tip and Ring lines that have an untripped position connecting Tip and Ring line terminals of the surge protector respectively to the Tip and Ring line resistive elements, and a tripped position in which they ground the Tip and Ring line terminals. The switches are switched to their tripped position in response to the heat generated in the resistive elements as a consequence of current passing through them that exceeds a predetermined current level. A surge suppression element is connected in parallel with each of the resistive elements. The resistive elements are preferably carbon film resistors, and the surge suppression elements are preferably transient voltage suppression diodes.

This invention discloses an electronic device formed as an integrated circuit (IC) wherein the electronic device further includes a transient voltage suppressing (TVS) circuit for suppressing a transient voltage. The transient voltage suppressing (TVS) circuit includes a Zener diode connected between a ground terminal and a node for triggering a snapback circuit. In one embodiment, this node may be a Vcc terminal. The TVS device further includes a snapback circuit connected in parallel to the Zener diode for conducting a transient voltage current with a snapback current-voltage (I-V) characteristic upon turning on of the snapback circuit And, the TVS device further includes a snapback suppressing circuit connected in series with the snapback circuit for conducting a current with an I-V characteristic complementary to the snapback-IV characteristic for clamping a snapback voltage.

The invention discloses an active clamping circuit driven by an IGBT. The active clamping circuit comprises a first transient voltage restraint diode, a second transient voltage restraint diode, a diode and a current-limiting resistor, the first transient voltage restraint diode, the second transient voltage restraint diode, the diode and the current-limiting resistor are sequentially connected between a collector and a grid of the IGBT, and a capacitor and a discharging resistor are connected to the second transient voltage restraint diode in parallel. Protection on a dynamic active clamp and a fixed active clamp of the IGBT is achieved. The active clamping circuit is simple in structure and high in universality, parameter setting of active clamping voltage can be carried out according to various application occasions, and the active clamping circuit can be applied to design of IGBT driving circuits under various working conditions.

The invention relates to a two-way low-voltage punch-through transient voltage suppression diode which comprises a silicon chip consisting of five areas from bottom to top, wherein metal electrodes are formed at both the front and the back of the silicon chip, and the five areas comprise a first area which is an n+ underlay with the doping of n type, a second area which is a p+ buried layer with the doping of p type, a third area which is a p- epitaxial layer with the doping of p type, a fourth area which is a p+ emitting area with the doping of p type, and a fifth area which is an n+ emitting area with the doping of n type, wherein the second area horizontally overlaps half of the first area; half of the third area is arranged on the first area and the other half of the third area is arranged on the second area; the fourth area horizontally overlaps half of the third area and is opposite to the position of the second area; and half of the fifth area is arranged on the third area and the other half of the fifth area is arranged on the fourth area. The diode has the advantages of low punch-through, voltage and capacitance, large current, excellent clamping performance, surface punch-through resistance and uniform forward and inverse electrical characteristics.

A bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes and a diode triggered clamp device in some embodiment. In other embodiments, a bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes with a clamp device merged with a steering diode in each set. The TVS circuit is constructed to realize low capacitance at the protected nodes and improved clamping voltage for robust protection against surge evens. In some embodiments, the TVS circuit realizes low capacitance at the protected nodes by fully or almost completely depleting the P-N junction connected to the protected nodes in the operating voltage range. In this manner, the TVS circuit does not present undesirable parasitic capacitance to the data pins being protected, especially when the data pins are applied in high speed applications.

The invention discloses a manufacturing method of a low-voltage transient voltage suppression diode chip, which is characterized by comprising the following steps: a. selecting a P type crystal orientation monocrystalline silicon piece with resistivity of 0.001-0.02 omega*cm; carrying out chemical polishing and heat treatment gettering technologies on the monocrystalline silicon piece to reduce the defects and the impurity concentration of the surface and near a P / N nodal area of the monocrystalline silicon piece so as to realize the characteristic of low internal current leakage; c. doping chlorine, thermally oxidizing and passivating a P / N nodal surface; and d. bending a P / N node on the edge part of the P / N nodal surface towards a P area through a thermal oxidation technology so as to realize the characteristic of low surface current leakage. The invention can effectively reduce the reverse current leakage.

The invention discloses an IGBT driving circuit of a converter for an electric locomotive. The IGBT driving circuit is characterized in that complete isolation of the high-voltage side and the low-voltage side can be achieved through power voltage isolation, control signal isolation and state feedback signal isolation, an IGBT overvoltage-overcurrent protection circuit, a positive voltage protection circuit, a negative voltage protection circuit and a gate pole protection circuit are adopted to implement further circuit protection, and therefore the IGBT converter can safely and reliably run and can well adapt to the complex environment in the electric locomotive. Meanwhile, the IGBT driving circuit is further characterized in that flexible model selection can be carried out on a voltage-stabilizing diode, a bidirectional transient voltage suppression diode and four avalanche diodes, and therefore the requirements of different application scenarios of the electric locomotive for the circuit protection capacity are flexibly met; in addition, flexible model selection can be further carried out on a second adaptation board resistor RA2, a fourth adaptation board resistor RA4 and a first adaptation board capacitor CA1, and therefore the requirements of the different application scenarios of the electric locomotive for the IGBT driving capacity are flexibly met.

The invention discloses a transient voltage suppressor. The transient voltage suppressor is provided with a signal end and a grounding end. The transient voltage suppressor comprises a capacitive diode assembly and a first Zener diode, which are connected in series. The capacitive diode assembly comprises a first diode and a second diode, wherein the first and second diodes are formed in the same semiconductor chip and are in reverse parallel connection in the semiconductor chip. The transient voltage suppressor employs the capacitive diode assembly as a nonpolar capacitor element, thereby improving the transient response speed of the transient voltage suppressor.

The invention relates to a high-luminance LED strobe lamp and belongs to the technical field of light source control. The high-luminance LED strobe lamp comprises a strobe / burst-strobe synchronous detection circuit. A port of a wiring terminal J2 in the circuit is respectively connected with a positive electrode and a negative electrode of a transient voltage suppression diode TVS1; the positive electrode of the transient voltage suppression diode TVS1 is connected in series with a diode D2 and then connected with an emitter of a triode Q1, and meanwhile the positive electrode of the transient voltage suppression diode TVS1 is connected with a resistor R8 in series and then connected with a base of a triode Q3; a base of the triode Q1 is connected with a resistor in series and then connected with a base of a triode Q2, both a collector of the triode Q1 and a collector of the triode Q3 are connected with an input port of a photoelectric coupler U2, and an output port of the photoelectric coupler U2 is connected with an input port of a master controller; a collector of the triode Q2 is connected with the base of the triode Q3, and an emitter of the triode Q2 and an emitter of the triode Q3 are connected and meanwhile grounded. A strobe control circuit controls strobe and burst strobe of the LED lamp, and thus the utilization rate of the light source and the quality of a snapshot photo are improved.

Disclosed a transient voltage suppressor and a method for manufacturing the same. According to the transient voltage suppressor, an additional gate stack layer is introduced based on the prior transient voltage suppressor, and the diffusion isolation regions are reused as the conductive vias, so that, the gate stack layer, the first doped region, the conductive vias, and the second semiconductor layer constitute a MOS transistor being coupled in parallel to the Zener diode or the avalanche diode of the transient voltage suppressor. When the current of the I / O terminal is relatively large, the MOS transistor is turned on to share part of the current of the I / O terminal through the Zener diode or the avalanche diode, thereby protecting the Zener diode or the avalanche diode from being damaged due to excessive current. Thus, the robustness of the transient voltage suppressor is improved without increasing the manufacture cost.

The invention discloses an Ethernet port circuit. In the present invention, each pair of differential lines of the Ethernet port circuit is connected to each other through two series diodes with opposite conduction directions, so as to discharge the voltage when the differential mode voltage between each pair of differential lines is too large due to lightning strikes. Discharge energy, so that differential mode protection can be achieved, and because the cost of diodes is much lower than that of transient voltage suppressor diodes (TVS), the cost is reduced while achieving differential mode protection. Further, in order to realize common mode protection, the present invention can also ground the center tap of the transformer on one side of the connector through components that can realize voltage clamping such as varistors, etc. When the common-mode voltage of the common-mode voltage is too large due to lightning strikes, the energy is released, so that common-mode protection can also be achieved.

A protection circuit for power of a car is located between an output terminal of a car power and a car's electronic device input terminal. The protection circuit includes a transient voltage suppressing diode, a diode, and a filtering circuit. The two terminals of the transient voltage suppressing diode are connected with the output terminal of car power. The diode is connected with the transient voltage suppressing diode and the output terminal of car power. The filtering circuit is connected with the diode and the car's electronic device input terminal. Thereby, the transient voltage suppressing diode of the present invention clamps the ripple at a safe voltage to assure the life of the car's electronic device. Furthermore, the transient voltage suppressing diode and the filtering circuit can prevent the car's electronic device from being interfered and damaged due to the ESD. The reliability of the electronic device is enhanced.

A transient voltage suppressor includes a reverse bias transient voltage suppressor PN diode connected in series with a forward biased PIN diode, the series circuit formed by the PN diode and the PIN diode is connected between first and second terminals and in parallel with a reverse biased PIN diode.

The invention discloses a low-capacity glass solid packaged silicon transient voltage suppressor and a manufacturing method thereof. The low-capacity glass solid packaged silicon transient voltage suppressor comprises a shell, leads which are drawn out along two ends of the shell, and a transient voltage suppressor chip, a rectifier diode chip, a plurality of aluminum sheet layers and two molybdenum electrodes which are arranged in the shell, wherein the transient voltage suppressor chip is connected in series with the rectifier diode chip; a plurality of aluminum sheet layers are arranged on two sides of the transient voltage suppressor chip and the rectifier diode chip respectively; the transient voltage suppressor chip and the rectifier diode chip also are connected with the molybdenum electrodes respectively; and the two molybdenum electrodes are connected with the leads respectively. The low-capacity metal packaged silicon transient voltage suppressor has the functions of a transient voltage suppressor and a rectifier diode simultaneously, has the advantages of small size, light weight, low manufacturing cost and low junction capacity, and is particularly suitable to serve as a protective device in high frequency lines.

The invention discloses a low capacitance super-deep groove transient voltage restraining diode structure which comprises a television service provider network (TVSPN) junction and a low capacitance PN junction. A series of close arranged super-deep grooves with depth deeper than 10 mum are etched on a multilayer structure formed by stacking of a heavily doped P-type substrate (41), a heavily doped N-type extending layer (42), a lightly doped N-type extending layer (43) and a silicon dioxide layer (44), the super-deep grooves penetrate through the lightly doped N-type extending layer (43) and the heavily doped N-type extending layer (42) to enter in the heavily doped P-type substrate (41), doped N-type polycrystalline silicon (47) is filled in the super-deep grooves, the N-type polycrystalline silicon is pushed at the high temperature further, and the TVSPN junction of a three-dimensional structure is formed by the side wall and the bottom of the doped N-type polycrystalline silicon (47) for filling the close arranged super-deep grooves and the heavily doped P-type substrate (41). P-type regional injection (49) is arranged on the lightly doped N-type extending layer (43). The low capacitance PN junction is formed by the P-type regional injection (49) and the lightly doped N-type extending layer (43).

The invention discloses a low-capacity metal packaged silicon transient voltage suppressor and a manufacturing method thereof. The low-capacity metal packaged silicon transient voltage suppressor comprises a shell, an upper lead and a lower lead which are drawn out along two ends of the shell, and a transient voltage suppressor chip, a rectifier diode chip, a plurality of solder layers and two electrodes which are arranged in the shell, wherein the shell is made of glass Kovar alloy; the transient voltage suppressor chip is connected in series with the rectifier diode chip; a plurality of solder layers are arranged on two sides of the transient voltage suppressor chip and the rectifier diode chip respectively; the transient voltage suppressor chip and the rectifier diode chip also are connected with the electrodes respectively; and the two electrodes are connected with the upper lead and the lower lead respectively. The low-capacity metal packaged silicon transient voltage suppressor has the functions of a transient voltage suppressor and a rectifier diode simultaneously, has the advantages of small size, light weight, low manufacturing cost and low junction capacity, and is particularly suitable to serve as a protective device in high frequency lines.