203 results about "Transient-voltage-suppression diode" patented technology

This invention discloses an electronic device formed as an integrated circuit (IC) wherein the electronic device further includes a transient voltage suppressing (TVS) circuit. The TVS circuit includes a triggering Zener diode connected between an emitter and a collector of a bipolar-junction transistor (BJT) wherein the Zener diode having a reverse breakdown voltage BV less than or equal to a BVceo of the BJT where BVceo stands for a collector to emitter breakdown voltage with base left open. The TVS circuit further includes a rectifier connected in parallel to the BJT for triggering a rectified current through the rectifier for further limiting an increase of a reverse blocking voltage. In a preferred embodiment, the triggering Zener diode, the BJT and the rectifier are formed in a semiconductor substrate by implanting and configuring dopant regions of a first and a second conductivity types in a N-well and a P-well whereby the TVS can be formed in parallel as part of the manufacturing processes of the electronic device.

A symmetrical blocking transient voltage suppressing (TVS) circuit for suppressing a transient voltage includes an NPN transistor having a base electrically connected to a common source of two transistors whereby the base is tied to a terminal of a low potential in either a positive or a negative voltage transient. The two transistors are two substantially identical transistors for carrying out a substantially symmetrical bi-directional clamping a transient voltage. These two transistors further include a first and second MOSFET transistors having an electrically interconnected source. The first MOSFET transistor further includes a drain connected to a high potential terminal and a gate connected to the terminal of a low potential and the second MOSFET transistor further includes a drain connected to the terminal of a low potential terminal and a gate connected to the high potential terminal.

The invention discloses a transient voltage suppresser diode and a manufacturing method thereof. The transient voltage suppresser diode comprises a first steering diode, a second steering diode and a Zener diode which are connected in parallel, wherein an input/output interface is arranged between the first steering diode and a second steering diode, and a voltage signal wire is arranged between the first steering diode and the Zener diode. The transient voltage suppresser diode has super low capacitance value and stable performance and can satisfy the requirement of large-scale production.

A surge protection device includes a gas discharge tube surge protector connected between a Tip line and a Ring line, and further includes solid state heat-generating resistive elements in the Tip and Ring lines, and thermally-responsive sneak current grounding switches in the Tip and Ring lines that have an untripped position connecting Tip and Ring line terminals of the surge protector respectively to the Tip and Ring line resistive elements, and a tripped position in which they ground the Tip and Ring line terminals. The switches are switched to their tripped position in response to the heat generated in the resistive elements as a consequence of current passing through them that exceeds a predetermined current level. A surge suppression element is connected in parallel with each of the resistive elements. The resistive elements are preferably carbon film resistors, and the surge suppression elements are preferably transient voltage suppression diodes.

This invention discloses an electronic device formed as an integrated circuit (IC) wherein the electronic device further includes a transient voltage suppressing (TVS) circuit for suppressing a transient voltage. The transient voltage suppressing (TVS) circuit includes a Zener diode connected between a ground terminal and a node for triggering a snapback circuit. In one embodiment, this node may be a Vcc terminal. The TVS device further includes a snapback circuit connected in parallel to the Zener diode for conducting a transient voltage current with a snapback current-voltage (I-V) characteristic upon turning on of the snapback circuit And, the TVS device further includes a snapback suppressing circuit connected in series with the snapback circuit for conducting a current with an I-V characteristic complementary to the snapback-IV characteristic for clamping a snapback voltage.

The invention discloses an active clamping circuit driven by an IGBT. The active clamping circuit comprises a first transient voltage restraint diode, a second transient voltage restraint diode, a diode and a current-limiting resistor, the first transient voltage restraint diode, the second transient voltage restraint diode, the diode and the current-limiting resistor are sequentially connected between a collector and a grid of the IGBT, and a capacitor and a discharging resistor are connected to the second transient voltage restraint diode in parallel. Protection on a dynamic active clamp and a fixed active clamp of the IGBT is achieved. The active clamping circuit is simple in structure and high in universality, parameter setting of active clamping voltage can be carried out according to various application occasions, and the active clamping circuit can be applied to design of IGBT driving circuits under various working conditions.

The invention relates to a two-way low-voltage punch-through transient voltage suppression diode which comprises a silicon chip consisting of five areas from bottom to top, wherein metal electrodes are formed at both the front and the back of the silicon chip, and the five areas comprise a first area which is an n+ underlay with the doping of n type, a second area which is a p+ buried layer with the doping of p type, a third area which is a p- epitaxial layer with the doping of p type, a fourth area which is a p+ emitting area with the doping of p type, and a fifth area which is an n+ emitting area with the doping of n type, wherein the second area horizontally overlaps half of the first area; half of the third area is arranged on the first area and the other half of the third area is arranged on the second area; the fourth area horizontally overlaps half of the third area and is opposite to the position of the second area; and half of the fifth area is arranged on the third area and the other half of the fifth area is arranged on the fourth area. The diode has the advantages of low punch-through, voltage and capacitance, large current, excellent clamping performance, surface punch-through resistance and uniform forward and inverse electrical characteristics.

The invention discloses a manufacturing method of a low-voltage transient voltage suppression diode chip, which is characterized by comprising the following steps: a. selecting a P type crystal orientation monocrystalline silicon piece with resistivity of 0.001-0.02 omega*cm; carrying out chemical polishing and heat treatment gettering technologies on the monocrystalline silicon piece to reduce the defects and the impurity concentration of the surface and near a P/N nodal area of the monocrystalline silicon piece so as to realize the characteristic of low internal current leakage; c. doping chlorine, thermally oxidizing and passivating a P/N nodal surface; and d. bending a P/N node on the edge part of the P/N nodal surface towards a P area through a thermal oxidation technology so as to realize the characteristic of low surface current leakage. The invention can effectively reduce the reverse current leakage.

The invention provides a lightning protection circuit for an intelligent ammeter, which employs a two-stage composite lightning protection structure. That is to say, an input port employs gas discharge tubes as primary lightning protection; an output port employs a thermistor and a transient voltage suppression diode as secondary lightning protection; the primary lightning protection is formed by the two gas discharge tubes, carries out common mode protection and differential mode protection, reaches 10KV/500A in through-current capability and can reduce voltage to about 500V; the secondary lightning protection is formed by the thermistor PTC and the TVS (transient voltage suppression) diode; the thermistor exerts a current limiting effect; and after secondary limiting by the TVS diode, the voltage is suppressed at about 6.8V, so that a 485 module circuit is protected. The circuit employs the two-stage composite lightning protection structure, the lightning protection effect is exerted in deed in a use process, and the problems of halt and failure in remote meter reading due to factors such as a lightning stroke are avoided.

The invention discloses an IGBT driving circuit of a converter for an electric locomotive. The IGBT driving circuit is characterized in that complete isolation of the high-voltage side and the low-voltage side can be achieved through power voltage isolation, control signal isolation and state feedback signal isolation, an IGBT overvoltage-overcurrent protection circuit, a positive voltage protection circuit, a negative voltage protection circuit and a gate pole protection circuit are adopted to implement further circuit protection, and therefore the IGBT converter can safely and reliably run and can well adapt to the complex environment in the electric locomotive. Meanwhile, the IGBT driving circuit is further characterized in that flexible model selection can be carried out on a voltage-stabilizing diode, a bidirectional transient voltage suppression diode and four avalanche diodes, and therefore the requirements of different application scenarios of the electric locomotive for the circuit protection capacity are flexibly met; in addition, flexible model selection can be further carried out on a second adaptation board resistor RA2, a fourth adaptation board resistor RA4 and a first adaptation board capacitor CA1, and therefore the requirements of the different application scenarios of the electric locomotive for the IGBT driving capacity are flexibly met.

The invention discloses a transient voltage suppressor. The transient voltage suppressor is provided with a signal end and a grounding end. The transient voltage suppressor comprises a capacitive diode assembly and a first Zener diode, which are connected in series. The capacitive diode assembly comprises a first diode and a second diode, wherein the first and second diodes are formed in the same semiconductor chip and are in reverse parallel connection in the semiconductor chip. The transient voltage suppressor employs the capacitive diode assembly as a nonpolar capacitor element, thereby improving the transient response speed of the transient voltage suppressor.

The invention relates to a high-luminance LED strobe lamp and belongs to the technical field of light source control. The high-luminance LED strobe lamp comprises a strobe/burst-strobe synchronous detection circuit. A port of a wiring terminal J2 in the circuit is respectively connected with a positive electrode and a negative electrode of a transient voltage suppression diode TVS1; the positive electrode of the transient voltage suppression diode TVS1 is connected in series with a diode D2 and then connected with an emitter of a triode Q1, and meanwhile the positive electrode of the transient voltage suppression diode TVS1 is connected with a resistor R8 in series and then connected with a base of a triode Q3; a base of the triode Q1 is connected with a resistor in series and then connected with a base of a triode Q2, both a collector of the triode Q1 and a collector of the triode Q3 are connected with an input port of a photoelectric coupler U2, and an output port of the photoelectric coupler U2 is connected with an input port of a master controller; a collector of the triode Q2 is connected with the base of the triode Q3, and an emitter of the triode Q2 and an emitter of the triode Q3 are connected and meanwhile grounded. A strobe control circuit controls strobe and burst strobe of the LED lamp, and thus the utilization rate of the light source and the quality of a snapshot photo are improved.

The invention discloses an Ethernet port circuit. In the present invention, each pair of differential lines of the Ethernet port circuit is connected to each other through two series diodes with opposite conduction directions, so as to discharge the voltage when the differential mode voltage between each pair of differential lines is too large due to lightning strikes. Discharge energy, so that differential mode protection can be achieved, and because the cost of diodes is much lower than that of transient voltage suppressor diodes (TVS), the cost is reduced while achieving differential mode protection. Further, in order to realize common mode protection, the present invention can also ground the center tap of the transformer on one side of the connector through components that can realize voltage clamping such as varistors, etc. When the common-mode voltage of the common-mode voltage is too large due to lightning strikes, the energy is released, so that common-mode protection can also be achieved.

A protection circuit for power of a car is located between an output terminal of a car power and a car's electronic device input terminal. The protection circuit includes a transient voltage suppressing diode, a diode, and a filtering circuit. The two terminals of the transient voltage suppressing diode are connected with the output terminal of car power. The diode is connected with the transient voltage suppressing diode and the output terminal of car power. The filtering circuit is connected with the diode and the car's electronic device input terminal. Thereby, the transient voltage suppressing diode of the present invention clamps the ripple at a safe voltage to assure the life of the car's electronic device. Furthermore, the transient voltage suppressing diode and the filtering circuit can prevent the car's electronic device from being interfered and damaged due to the ESD. The reliability of the electronic device is enhanced.

A transient voltage suppressor includes a reverse bias transient voltage suppressor PN diode connected in series with a forward biased PIN diode, the series circuit formed by the PN diode and the PIN diode is connected between first and second terminals and in parallel with a reverse biased PIN diode.

The invention discloses a low-capacity glass solid packaged silicon transient voltage suppressor and a manufacturing method thereof. The low-capacity glass solid packaged silicon transient voltage suppressor comprises a shell, leads which are drawn out along two ends of the shell, and a transient voltage suppressor chip, a rectifier diode chip, a plurality of aluminum sheet layers and two molybdenum electrodes which are arranged in the shell, wherein the transient voltage suppressor chip is connected in series with the rectifier diode chip; a plurality of aluminum sheet layers are arranged on two sides of the transient voltage suppressor chip and the rectifier diode chip respectively; the transient voltage suppressor chip and the rectifier diode chip also are connected with the molybdenum electrodes respectively; and the two molybdenum electrodes are connected with the leads respectively. The low-capacity metal packaged silicon transient voltage suppressor has the functions of a transient voltage suppressor and a rectifier diode simultaneously, has the advantages of small size, light weight, low manufacturing cost and low junction capacity, and is particularly suitable to serve as a protective device in high frequency lines.

The invention discloses a low capacitance super-deep groove transient voltage restraining diode structure which comprises a television service provider network (TVSPN) junction and a low capacitance PN junction. A series of close arranged super-deep grooves with depth deeper than 10 mum are etched on a multilayer structure formed by stacking of a heavily doped P-type substrate (41), a heavily doped N-type extending layer (42), a lightly doped N-type extending layer (43) and a silicon dioxide layer (44), the super-deep grooves penetrate through the lightly doped N-type extending layer (43) and the heavily doped N-type extending layer (42) to enter in the heavily doped P-type substrate (41), doped N-type polycrystalline silicon (47) is filled in the super-deep grooves, the N-type polycrystalline silicon is pushed at the high temperature further, and the TVSPN junction of a three-dimensional structure is formed by the side wall and the bottom of the doped N-type polycrystalline silicon (47) for filling the close arranged super-deep grooves and the heavily doped P-type substrate (41). P-type regional injection (49) is arranged on the lightly doped N-type extending layer (43). The low capacitance PN junction is formed by the P-type regional injection (49) and the lightly doped N-type extending layer (43).

The invention discloses a low-capacity metal packaged silicon transient voltage suppressor and a manufacturing method thereof. The low-capacity metal packaged silicon transient voltage suppressor comprises a shell, an upper lead and a lower lead which are drawn out along two ends of the shell, and a transient voltage suppressor chip, a rectifier diode chip, a plurality of solder layers and two electrodes which are arranged in the shell, wherein the shell is made of glass Kovar alloy; the transient voltage suppressor chip is connected in series with the rectifier diode chip; a plurality of solder layers are arranged on two sides of the transient voltage suppressor chip and the rectifier diode chip respectively; the transient voltage suppressor chip and the rectifier diode chip also are connected with the electrodes respectively; and the two electrodes are connected with the upper lead and the lower lead respectively. The low-capacity metal packaged silicon transient voltage suppressor has the functions of a transient voltage suppressor and a rectifier diode simultaneously, has the advantages of small size, light weight, low manufacturing cost and low junction capacity, and is particularly suitable to serve as a protective device in high frequency lines.