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Two-way low-voltage punch-through transient voltage suppression diode and manufacturing method thereof

A technology of transient voltage suppression and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as increased cost, and achieve the effects of low leakage current, excellent clamping characteristics, and low capacitance

Active Publication Date: 2009-09-09
SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, two devices are used to complete bidirectional protection, which inevitably increases the cost

Method used

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  • Two-way low-voltage punch-through transient voltage suppression diode and manufacturing method thereof
  • Two-way low-voltage punch-through transient voltage suppression diode and manufacturing method thereof
  • Two-way low-voltage punch-through transient voltage suppression diode and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0085] See Figure 3.1~3.6 As shown, in order to realize the structure diagram of the manufacturing process of the bidirectional low-voltage punch-through transient voltage suppression diode of the present invention, it specifically includes the following steps:

[0086] The first step: such as Figure 3.1 , The p+ buried layer 21 is formed by boron implantation and annealing in half of the n+ substrate 20. The p+ buried layer 21 laterally covers half of the n+ substrate 20. This p-type buried layer serves as the heavily doped base region of the reverse punch through diode. The n-type substrate serves as the emitter area of ​​the reverse protection low-voltage punch-through diode 31 and the collector area of ​​the forward protection low-voltage punch-through diode 32;

[0087] The second step: such as Figure 3.2 , Grow a lightly doped p- epitaxial layer 22 on the n+ substrate 20 with the p+ buried layer 21, half of the p- epitaxial layer 22 is on the n+ substrate 20, and the othe...

Embodiment 2

[0093] See Figure 4.1~4.7 As shown, in order to realize the structure diagram of the manufacturing process of the bidirectional low-voltage punch-through transient voltage suppression diode of the present invention, it specifically includes the following steps:

[0094] The first step: such as Figure 4.1 , The p+ buried layer 21 is formed by boron implantation and annealing in half of the n+ substrate 20. The p+ buried layer 21 laterally covers half of the n+ substrate 20. This p-type buried layer serves as the heavily doped base region of the reverse punch through diode. The n-type substrate serves as the emitter area of ​​the reverse protection low-voltage punch-through diode 31 and the collector area of ​​the forward protection low-voltage punch-through diode 32;

[0095] The second step: such as Figure 4.2 , Grow a lightly doped p- epitaxial layer 22 on the n+ substrate 20 with the p+ buried layer 21, half of the p- epitaxial layer 22 is on the n+ substrate 20, and the othe...

Embodiment 3

[0102] See Figure 5.1~5.6 As shown, in order to realize the structure diagram of the manufacturing process of the bidirectional low-voltage punch-through transient voltage suppression diode of the present invention, it specifically includes the following steps:

[0103] The first step: such as Figure 5.1 , The p+ buried layer 21 is formed by boron implantation and annealing in half of the n+ substrate 20. The p+ buried layer 21 laterally covers half of the n+ substrate 20. This p-type buried layer serves as the heavily doped base region of the reverse punch through diode. The n-type substrate serves as the emitter area of ​​the reverse protection low-voltage punch-through diode 31 and the collector area of ​​the forward protection low-voltage punch-through diode 32;

[0104] The second step: such as Figure 5.2 , Grow a lightly doped p- epitaxial layer 22 on the n+ substrate 20 with the p+ buried layer 21, half of the p- epitaxial layer 22 is on the n+ substrate 20, and the other...

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Abstract

The invention relates to a two-way low-voltage punch-through transient voltage suppression diode which comprises a silicon chip consisting of five areas from bottom to top, wherein metal electrodes are formed at both the front and the back of the silicon chip, and the five areas comprise a first area which is an n+ underlay with the doping of n type, a second area which is a p+ buried layer with the doping of p type, a third area which is a p- epitaxial layer with the doping of p type, a fourth area which is a p+ emitting area with the doping of p type, and a fifth area which is an n+ emitting area with the doping of n type, wherein the second area horizontally overlaps half of the first area; half of the third area is arranged on the first area and the other half of the third area is arranged on the second area; the fourth area horizontally overlaps half of the third area and is opposite to the position of the second area; and half of the fifth area is arranged on the third area and the other half of the fifth area is arranged on the fourth area. The diode has the advantages of low punch-through, voltage and capacitance, large current, excellent clamping performance, surface punch-through resistance and uniform forward and inverse electrical characteristics.

Description

Technical field [0001] The invention relates to the field of semiconductor devices, in particular to the field of bidirectional low-voltage transient voltage suppression devices, and is a bidirectional low-voltage punch-through transient voltage suppression diode and a manufacturing method thereof. Background technique [0002] At present, electronic circuits with low operating voltages are widely used in the electronics industry. As the operating voltage of the circuit decreases, it means that the maximum voltage that the circuit can withstand when it is not damaged also decreases. In order to protect the current low-voltage working circuits, especially those working below 5V, it is urgent to use a transient voltage suppressor with a low breakdown voltage for protection. [0003] One of the traditional overvoltage protection devices is a Zener diode for reverse bias applications. This device has good protection performance above 5V, but when the breakdown voltage drops below 5V,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
Inventor 苏海伟张关保李星吴兴农
Owner SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
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