Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Transient voltage suppressor

A transient voltage suppression, conductive type technology, applied in the field of microelectronics, can solve the problems of parasitic effects and poor heat dissipation, non-bidirectional devices, high transient power, etc., to reduce manufacturing costs, improve response speed, and improve applicability. Effect

Active Publication Date: 2015-12-23
BEIJING YANDONG MICROELECTRONICS
View PDF6 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the TVS device includes two current paths in opposite directions, so it cannot be directly used as a bidirectional device
In addition, due to parasitic effects and poor heat dissipation, it is difficult for this TVS device to achieve high transient power

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transient voltage suppressor
  • Transient voltage suppressor
  • Transient voltage suppressor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown.

[0038] It should be understood that when describing a certain structure, when a layer or an area is referred to as being "on" or "over" another layer or another area, it may mean directly on another layer or another area, or Other layers or regions are also included between it and another layer or another region. And, if the structure is turned over, the layer, one region, would be "under" or "beneath" the other layer, another region. If it is to describe the situation directly on another layer or another area, the expression "A is directly above B" or "A is above and adjacent to B" will be used herein.

[0039] In addition, when descri...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a transient voltage suppressor. The transient voltage suppressor is provided with a signal end and a grounding end. The transient voltage suppressor comprises a capacitive diode assembly and a first Zener diode, which are connected in series. The capacitive diode assembly comprises a first diode and a second diode, wherein the first and second diodes are formed in the same semiconductor chip and are in reverse parallel connection in the semiconductor chip. The transient voltage suppressor employs the capacitive diode assembly as a nonpolar capacitor element, thereby improving the transient response speed of the transient voltage suppressor.

Description

technical field [0001] The present invention relates to the technical field of microelectronics, and more particularly, to a transient voltage suppressor. Background technique [0002] The transient voltage suppressor TVS (TransientVoltageSuppressor) is a high-efficiency circuit protection device developed on the basis of a voltage regulator tube. The shape of TVS diodes is the same as that of ordinary Zener tubes. However, due to the special structure and process design, the transient response speed and surge absorption capacity of TVS diodes are much higher than ordinary Zener tubes. For example, TVS diodes have a response time of only 10 -12 seconds, and can absorb surge power up to several thousand watts. Under reverse application conditions, when subjected to a high-energy large pulse, the working impedance of the TVS diode will quickly drop to an extremely low conduction value, allowing a large current to pass, and at the same time, clamp the voltage at a predetermin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H02H9/04H01L27/02
Inventor 周源张彦秀韦仕贡徐鸿卓
Owner BEIJING YANDONG MICROELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com