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206results about How to "Improve electrostatic protection ability" patented technology

Capacitance type touch display panel and capacitance type touch display substrate

The invention discloses a capacitance type touch display panel comprising a display panel, a touch sensing unit and a plurality of floating grid static protective elements, wherein the display panel comprises a sensing area; the touch sensing unit is arranged in the sensing area of the display panel and comprises a plurality of first sensing serials and a plurality of second sensing serials; the plurality of first sensing serials are arranged along a first direction and each first sensing serial comprises a plurality of first sensing pads which are mutually and electrically connected; the plurality of second sensing serials are arranged along a second direction and each second sensing serial comprises a plurality of second sensing pads which are mutually and electrically connected; the plurality of floating grid static protective elements are arranged in the sensing area of the display panel; and each floating grid static protective element is arranged among two first sensing pads which are adjacent but not electrically connected and two second sensing pads which are adjacent but not electrically connected. The capacitance type touch device is provided with the floating grid static protective elements in the sensing area, thereby effectively improving the static protecting capability of the capacitance type touch device.
Owner:AU OPTRONICS CORP

DispLay paneL and dispLay device

The invention discLoses a dispLay paneL and a dispLay device, and beLongs to the technicaL fieLd of dispLay. The dispLay paneL comprises a hoLLowed-out part, a first non-dispLay area, a dispLay area and a second non-dispLay area; the first non-dispLay area is arranged around the hoLLowed-out part, the dispLay area surrounds the first non-dispLay area, and the second non-dispLay area surrounds thedispLay area; the first non-dispLay area comprises a conductive ring, and the conductive ring is arranged around the hoLLowed-out part; the dispLay area comprises a thin fiLm transistor Layer and a common eLectrode Layer; the thin fiLm transistor Layer comprises a pLuraLity of thin fiLm transistors; each thin fiLm transistor comprises a semiconductor part, a grid eLectrode, a source eLectrode anda drain eLectrode; the semiconductor part and the conductive ring are Located on the same fiLm Layer; the common eLectrode Layer extends to the first non-dispLay region and is eLectricaLLy connected with the conductive ring; the common eLectrode Layer is eLectricaLLy connected with a common eLectrode wire. Compared with the prior art, the dispLay paneL has good eLectrostatic protection performance, the dispLay effect of the dispLay paneL cannot be infLuenced, and a fuLL-screen design is easier to reaLize.
Owner:XIAMEN TIANMA MICRO ELECTRONICS

NMOS drive output band-gap reference circuit

The invention provides an NMOS drive output band-gap reference circuit. The NMOS drive output band-gap reference circuit comprises a starting circuit module for providing a bias voltage, an operational amplifier used for fixing node voltages at the two feedback input ends of a band-gap reference module and the band-gap reference module used for generating a reference voltage with the zero-temperature coefficient; the starting circuit module provides the bias voltage for the operational amplifier and the band-gap reference module. According to the NMOS drive output band-gap reference circuit, an NMOS serves as output of the band-gap reference voltage, and the band-gap reference drive capacity is improved; a PMOS is used for starting the current of the circuit in a mirroring mode, hundreds of nA of current flows through a band-gap reference zero-temperature coefficient generation circuit, the band-gap reference starting capacity is strengthened, and the circuit reliability is improved. Unit resistors are connected in parallel or in series to be equivalent to a resistor R0, so that the resistance matching performance is improved, and the band-gap reference accuracy is optimized; the resistors are connected between an NMOS drive pipe and a power source in series, so that the electrostatic protection capacity of the circuit is improved.
Owner:VERISILICON MICROELECTRONICS SHANGHAI +3

Electrostatic protection device structure

The invention discloses an electrostatic protection device structure which comprises CMOS tubes that are integrally placed above a P-type silicon substrate and are arranged to a multi-finger-shaped structure, wherein two outmost sides of the electrostatic protection device structure are source regions of the MOS tube. Except for the two outmost source regions, passive regions of other drain regions or source regions are comb-teeth-shaped and are arranged in a crossed manner between two adjacent comb teeth. A field oxidation region isolator exists between the passive regions of adjacent drain regions or source regions. Each drain region or source region is provided with contact holes for connecting metal with the passive region, wherein the contact holes on the passive regions which are comb-teeth-shaped and are arranged in a crossed manner between two adjacent comb teeth are arranged at the tops of the comb-teeth-shaped arranged passive regions, namely are next to one side of the field oxidation region isolator, which is far from a polysilicon gate. The electrostatic protection device structure is mainly used for electrostatic protection of a low-voltage MOS. Not only can electrostatic protecting capability be effectively improved, but also area occupied by the protection device can be reduced as possible. The electrostatic protection device structure can be used as an electrostatic protection device as well as a power device.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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